ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.080 @ VGS = 10V
0.150 @ VGS = 4.5V
I
D
(A)
5.3
2.8
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
D
G
S
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Tape width
(mm)
12
12
Quantity per
reel
1,000
4,000
Ordering information
Device
ZXMN6A08GTA
ZXMN6A08GTC
Reel size
(inches)
7
13
Pinout - top view
Device marking
ZXMN
6A08
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
