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ZXTN2011ZTA 参数 Datasheet PDF下载

ZXTN2011ZTA图片预览
型号: ZXTN2011ZTA
PDF下载: 下载PDF文件 查看货源
内容描述: 100V NPN低饱和中功率晶体管SOT89 [100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 112 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
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ZXTN2011Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T A =25°C
(b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
PD
T
j
, T
stg
LIMIT
200
100
7
4.5
10
1.5
12
2.1
16.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
LIMIT
83
60
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - MAY 2006
SEMICONDUCTORS
2