ZXTP25012EFH
12V, SOT23, PNP medium power transistor
Summary
BV
CEO
> -12V
h
FE
> 500
I
C(cont)
= -4A
R
CE(sat)
= 40m
V
CE(sat)
< -65mV @ 1A
P
D
= 1.25W
Complementary part number ZXTN25012EFH
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
Very high gain, 500 minimum
Low saturation voltage
E
E
C
B
Pinout - top view
Applications
•
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
Line disconnect switch
Ordering information
Device
ZXTP25012EFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1E8
© Zetex Semiconductors plc 2007
ZETEX [ ZETEX SEMICONDUCTORS ]
