ZXTP25100CZ
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(base open)
Emitter-Base breakdown
voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage (base
open)
Collector-Base cut-off
current
Collector-Emitter cut-off
current
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
BV
CBO
BV
CEO
-115
-100
-180
-140
V
V
I
C
= -100μA
I
C
= -10mA
(*)
BV
EBO
BV
ECX
-7
-7
-8.4
-8.3
V
V
I
E
= -100μA
I
E
= -100μA, R
BC
< 1kΩ or -
0.25V > V
BC
> 0.25V
I
E
= -100μA
BV
ECO
-7
-8.8
V
I
CBO
I
CEX
I
EBO
V
CE(sat)
<-1
-50
-0.5
-100
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
V
CB
=-115V
V
CB
=-115V, T
amb
=100°C
V
CE
= -90V, R
BE
< 1kΩ or -
0.25V < V
BE
< 1V
V
EB
= -5.6V
I
C
= -100mA, I
B
= -1 mA
(*)
I
C
= -500mA, I
B
= -50mA
(*)
I
C
= -500mA, I
B
= -20mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
=-1A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -100mA, V
CE
= -2V
(*)
I
C
= -500mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
<-1
-140
-80
-180
-155
-860
-800
200
180
110
20
350
320
190
35
180
153
14.1
15.8
41
411
89
-50
-210
-115
-315
-225
-950
-900
500
Base-Emitter saturation
voltage
Base-Eitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
MHz
pF
20
pF
ns
ns
ns
ns
I
C
= -20mA, V
CE
= -15V
f = 100MHz
V
EB
= -0.5V, f = 1MHz
(*)
V
CB
= 10V, f = 1MHz
(*)
V
cc
= -10V, I
c
= -500mA
I
B1
= -I
B2
= -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
© Zetex Semiconductors plc 2007
ZETEX [ ZETEX SEMICONDUCTORS ]
