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    产品型号AD53032的Datasheet PDF文件预览

    High Performance Driver/Comparator  
    Active Load on a Single Chip  
    a
    AD53032  
    FEATURES  
    FUNCTIONAL BLOCK DIAGRAM  
    250 MHz Operation  
    Driver/Comparator and Active Load Included  
    On-Chip Schottky Diode Bridge  
    52-Lead LQFP Package with Built-in Heatsink  
    V
    V
    V
    V
    V
    V
    V
    V
    CC  
    CC  
    CC  
    CC  
    EE  
    EE  
    EE EE  
    51  
    52  
    34  
    39  
    40  
    41 32  
    39nF  
    CHDCPL  
    VH 47  
    AD53032  
    45  
    37  
    38  
    43  
    42  
    49  
    50  
    31  
    VTERM  
    DATA  
    APPLICATIONS  
    Automatic Test Equipment  
    Semiconductor Test Systems  
    Board Test Systems  
    VHDCPL  
    DATA  
    39nF  
    CLDCPL  
    50⍀  
    IOD  
    DRIVER  
    V
    OUT  
    IOD  
    Instrumentation and Characterization Equipment  
    VLDCPL  
    RLD  
    RLD  
    V
    L
    HCOMP  
    LEH  
    LEH  
    QH  
    PRODUCT DESCRIPTION  
    The AD53032 is a single chip that performs the pin electronics  
    functions of driver, comparator and active load in ATE VLSI  
    and memory testers. In addition, a Schottky diode bridge for the  
    active load and a VCOM buffer are included internally.  
    QHB  
    COMPARATOR  
    QL  
    QL  
    The driver is a proprietary design that features three active  
    states: Data High Mode, Data Low Mode and Term Mode as  
    well as an Inhibit State. This facilitates the implementation of  
    high speed active termination. The output voltage range is –3 V  
    to +8 V to accommodate a wide variety of test devices. The  
    output leakage is typically less than 250 nA over the entire sig-  
    nal range.  
    LEL  
    LEL  
    LCOMP  
    ACTIVE LOAD  
    VCOMI  
    IOLC  
    +1  
    VCOMS  
    IOL  
    V/I  
    IOLRTN  
    The dual comparator, with an input range equal to the driver  
    output range, features built-in latches and ECL-compatible  
    outputs. The outputs are capable of driving 50 Ω signal lines  
    terminated to –2 V. Signal tracking capability is upwards of  
    5 V/ns.  
    IOHRTN  
    INHL 36  
    IOH  
    35  
    INHL  
    THERM  
    NC  
    1.0␮A/K  
    IOHC  
    V/I  
    The active load can be set for up to 35 mA load current with  
    less than a 10 µA linearity error through the entire set range.  
    9,33,44,46,48  
    PWRGND  
    2,5,8  
    ECLGND  
    HQGND2  
    HQGND  
    I
    OH, IOL and the buffered VCOM are independently adjustable.  
    Onboard Schottky diodes provide high speed switching and low  
    NC = NO CONNECT  
    capacitance.  
    Also included on the chip is an onboard temperature sensor  
    whose purpose is to give an indication of the surface tempera-  
    ture of the DCL. This information can be used to measure θJC  
    and θJA or flag an alarm if proper cooling is lost. Output from  
    the sensor is a current sink that is proportional to absolute tem-  
    perature. The gain is trimmed to a nominal value of 1.0 µA/K.  
    As an example, the output current can be sensed by using a  
    10 kΩ resistor connected from +10 V to the THERM (IOUT) pin.  
    A voltage drop across the resistor will be developed that equals:  
    10K × 1 µA/K = 10 mV/K = 2.98 V at room temperature.  
    REV. 0  
    Information furnished by Analog Devices is believed to be accurate and  
    reliable. However, no responsibility is assumed by Analog Devices for its  
    use, nor for any infringements of patents or other rights of third parties  
    which may result from its use. No license is granted by implication or  
    otherwise under any patent or patent rights of Analog Devices.  
    One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
    Tel: 781/329-4700  
    Fax: 781/326-8703  
    World Wide Web Site: http://www.analog.com  
    © Analog Devices, Inc., 1998  
    AD53032–SPECIFICATIONS  
    DRIVER SPECIFICATIONS  
    (All specifications are at TJ = +85؇C ؎ 5؇C, +VS = +12 V ؎ 3%, –VS = –7 V = ؎3% unless otherwise noted. All temperature coefficients are  
    measured at TJ = +75؇C to +95؇C). CHDCPL = CLDCPL = 39 nF.  
    Parameter  
    Min  
    Typ Max  
    Units  
    Test Conditions  
    DIFFERENTIAL INPUT CHARACTERISTICS  
    (DATA to DATA, IOD to IOD, RLD to RLD)  
    Input Voltage  
    –2  
    0
    ECL  
    V
    Differential Input Range  
    Bias Current  
    –250  
    +250  
    µA  
    VIN = –2 V, 0.0 V  
    VL, VH, VT = 5 V  
    REFERENCE INPUTS  
    Bias Currents  
    –50  
    –2  
    +50  
    8
    µA  
    OUTPUT CHARACTERISTICS  
    Logic High Range  
    V
    DATA = H, VH = –2 V to +8 V  
    VL = –3 V (VH = –2 V to +6 V)  
    VL = –1 V (VH = +6 V to +8 V)  
    Logic Low Range  
    Amplitude (VH and VL)  
    Absolute Accuracy  
    VH Offset  
    VH Gain + Linearity Error  
    VL Offset  
    –3  
    0.1  
    5
    9
    V
    V
    DATA = L, VL = –3 V to +5 V, VH = +6 V  
    VL = 0.0 V, VH = +0.1 V, VT = 0 V  
    VL = –2 V, VH = +7 V, VT = 0 V  
    DATA = H, VH = 0 V, VL = –3 V, VT = +3 V  
    DATA = H, VH = –2 V to +8 V, VL = –3 V, VT = +3 V  
    DATA = L, VL = –3 V, VH = +6 V, VT = +7.5 V  
    DATA = L, VL = 0 V , VH = +6 V, VT = +7.5 V  
    VL = 0 V, VH = +5 V, VT = 0 V  
    –50  
    0.3 – 5  
    –50  
    +50  
    mV  
    +0.3 + 5 % of VH + mV  
    +50 mV  
    +0.3 + 5 % of VL + mV  
    VL Gain + Linearity Error  
    Offset TC  
    –0.3 – 5  
    0.5  
    mV/°C  
    Output Resistance  
    VH = –2 V  
    VH = +8 V  
    VL = –3 V  
    VL = +5 V  
    VH = +3 V  
    Dynamic Current Limit  
    Static Current Limit  
    44  
    44  
    44  
    44  
    46  
    46  
    46  
    46  
    46  
    48  
    48  
    48  
    48  
    Ω
    Ω
    Ω
    Ω
    Ω
    mA  
    mA  
    VL = –3 V, VT = 0 V, IOUT = 0, +1, +30 mA  
    VL = –1 V, VT = 0 V, IOUT = 0, –1, –30 mA  
    VH = +6 V, VT = 0 V, IOUT = 0, +1, +30 mA  
    VH = +6 V, VT = 0 V, IOUT = 0, –1, –30 mA  
    VL = 0 V, VT = 0 V, IOUT = –30 mA (Trim Point)  
    CBYP = 39 nF, VH = +7 V, VL = –2 V, VT = 0 V  
    Output to –3 V, VH = +8 V, VL = –1 V, VT = 0 V  
    DATA = H and Output to +8 V, VH = +6 V,  
    VL = –3 V, VT = 0 V, DATA = L  
    100  
    –85  
    +85  
    VT  
    ERM  
    Voltage Range  
    –3  
    –50  
    8.0  
    +50  
    V
    mV  
    TERM MODE, VT = –3 V to +8 V, VL = 0 V, VH = 3 V  
    TERM MODE, VT = 0 V, VL = 0 V, VH = 3 V  
    VTERM Offset  
    VTERM Gain + Linearity Error  
    –0.3 + 5  
    +0.3 + 5 % of VSET + mV TERM MODE, VT = –3 V to +8 V, VL = 0 V, VH = 3 V  
    Offset TC  
    0.5  
    46  
    mV/°C  
    VT = 0 V, VL = 0 V, VH = 3 V  
    Output Resistance  
    44  
    49  
    Ω
    IOUT = +30 mA, +1.0 mA, VT = –3.0 V, VH = 3 V, VL = 0 V  
    IOUT = –30 mA, –1.0 mA, VT = +8.0 V, VH = 3 V, VL = 0 V  
    IOUT = ±30 mA, ±1.0 mA, VT = 0 V, VH = 3 V, VL = 0 V  
    DYNAMIC PERFORMANCE, (VH AND VL)  
    Propagation Delay Time  
    Propagation Delay TC  
    Delay Matching, Edge to Edge  
    Rise and Fall Times  
    1 V Swing  
    1.1  
    1.6  
    2
    <100  
    2.1  
    ns  
    ps/°C  
    ps  
    Measured at 50%, VH = +400 mV, VL = –400 mV  
    Measured at 50%, VH = +400 mV, VL = –400 mV  
    Measured at 50%, VH = +400 mV, VL = –400 mV  
    0.6  
    1.0  
    1.7  
    3.0  
    ns  
    ns  
    ns  
    ns  
    Measured 20%–80%, VL = 0 V, VH = 1 V  
    Measured 20%–80%, VL = 0 V, VH = 3 V  
    Measured 10%–90%, VL = 0 V, VH = 5 V  
    Measured 10%–90%, VL = –2 V, VH = 7 V  
    3 V Swing  
    5 V Swing  
    9 V Swing  
    Rise and Fall Time Temperature Coefficient  
    1 V Swing  
    3 V Swing  
    ±1  
    ±2  
    ±4  
    ps/°C  
    ps/°C  
    ps/°C  
    Measured 20%–80%, VL = 0 V, VH = 1 V  
    Measured 20%–80%, VL = 0 V, VH = 3 V  
    Measured 10%–90%, VL = 0 V, VH = 5 V  
    5 V Swing  
    Overshoot and Preshoot  
    –3.0 – 50  
    +3.0 + 50 % of Step + mV VL, VH = –0.1 V, 0.1 V, VL, VH = 0.0 V, 1.0 V  
    VL, VH = 0.0 V, 3.0 V, VL, VH = 0.0 V, 5.0 V  
    VL, VH = –2.0 V, 7.0 V  
    Settling Time  
    to 15 mV  
    to 4 mV  
    <50  
    <10  
    ns  
    µs  
    VL = 0 V, VH = 0.5 V  
    VL = 0 V, VH = 0.5 V  
    –2–  
    REV. 0  
    AD53032  
    Parameter  
    Min  
    Typ Max  
    Units  
    Test Conditions  
    Delay Change vs. Pulsewidth  
    Minimum Pulsewidth  
    3 V Swing  
    5 V Swing  
    Toggle Rate  
    <50  
    ps  
    VL = 0 V, VH = 2 V  
    2
    3
    250  
    ns  
    ns  
    MHz  
    VL = 0 V, VH = 3 V, 90% Reached, Measure @ 50%  
    VL = 0 V, VH = 5 V, 90% Reached, Measure @ 50%  
    VL = 0 V, VH = 5 V, VDUT > 3.0 V p-p  
    DYNAMIC PERFORMANCE, INHIBIT  
    Delay Time, Active to Inhibit  
    Delay Time, Inhibit to Active  
    1.5  
    1.5  
    4.0  
    3.5  
    ±1.0  
    2.2  
    ns  
    ns  
    ns  
    ns  
    Measured at 50%, VH = +2 V, VL = –2 V  
    Measured at 50%, VH = +2 V, VL = –2 V  
    Delay Time Matching (Z)  
    Z = Delay Time Active to Inhibit Test (Above)—  
    Delay Time Inhibit to Active Test (Above)  
    (Of Worst Two Edges)  
    I/O Spike  
    Rise, Fall Time, Active to Inhibit  
    Rise, Fall Time, Inhibit to Active  
    <200  
    3.5  
    mV, p-p  
    ns  
    ns  
    VH = 0 V, VL = 0 V  
    VH = +2 V, VL = –2 V (Measured 20%/80% of 1 V Output)  
    VH = +2 V, VL = –2 V (Measured 20%/80% of 1 V Output)  
    2.2  
    DYNAMIC PERFORMANCE , VTERM  
    Delay Time, VH to VTERM  
    Delay Time, VL to VTERM  
    Delay Time, VTERM to VH and VTERM to VL  
    Overshoot and Preshoot  
    3.0  
    5.0  
    4.0  
    ns  
    ns  
    ns  
    Measured at 50%, VL = VH = +0.4 V, VTERM = –0.4 V  
    Measured at 50%, VL = VH = +0.4 V, VTERM = –0.4 V  
    Measured at 50%, VL = VH = +0.4 V, VTERM = –0.4 V  
    –3.0 + 75  
    35  
    +3.0 + 75 % of Step + mV VH/VL, VTERM = (+0.4 V, –0.4 V), (0.0 V, –2.0 V),  
    (0.0 V, +7.0 V)  
    4.0  
    5.5  
    VTERM Mode Rise Time  
    VTERM Mode Fall Time  
    PSRR, DRIVE or TERM Mode  
    ns  
    ns  
    dB  
    VL, VH = 0 V, VTERM = –2 V, 20%–80%  
    VL, VH = 0 V, VTERM = –2 V, 20%–80%  
    VS = VS ± 3%  
    Specifications subject to change without notice.  
    COMPARATOR SPECIFICATIONS  
    (All specifications are at TJ = +85؇C ؎ 5؇C, +VS = +12 V ؎ 3%, –VS = –7 V = ؎3% unless otherwise noted. All temperature coefficients are  
    measured at TJ = +75؇C to +95؇C).  
    Parameter  
    Min  
    Typ Max  
    Units  
    Test Conditions  
    DC INPUT CHARACTERISTICS  
    Offset Voltage (VOS  
    Offset Voltage (Drift)  
    HCOMP, LCOMP Bias Current  
    Voltage Range (VCM  
    )
    –25  
    25  
    50  
    mV  
    µV/°C  
    µA  
    CMV = 0 V  
    CMV = 0 V  
    VIN = 0 V  
    –50  
    –3  
    50  
    8.0  
    )
    V
    Differential Voltage (VDIFF  
    Gain and Linearity  
    )
    9.0  
    0.05  
    V
    –0.05  
    % FSR  
    VIN = –3 V to +8 V  
    LATCH ENABLE INPUTS  
    Logic “1” Current (IIH  
    )
    250  
    µA  
    µA  
    LE, LE = –0.8 V  
    LE, LE = –1.8 V  
    Logic “0” Current (IIL  
    )
    –250  
    DIGITAL OUTPUTS  
    Logic “1” Voltage (VOH  
    )
    –0.98  
    V
    V
    V/ns  
    Q or Q, 50 Ω to –2 V  
    Q or Q, 50 Ω to –2 V  
    Logic “0” Voltage (VOL  
    Slew Rate  
    )
    –1.5  
    1
    SWITCHING PERFORMANCE  
    Propagation Delay  
    Input to Output  
    0.9  
    2.5  
    ns  
    VIN = 2 V p-p,  
    Latch Enable to Output  
    Propagation Delay Temperature Coefficient  
    Propagation Delay Change with Respect to  
    Slew Rate: 0.5 V, 1.0 V, 3.0 V/ns  
    Slew Rate: 5.0 V/ns  
    Amplitude: 1.0 V, 3.0 V, 5.0 V  
    Equivalent Input Rise Time  
    Pulsewidth Linearity  
    2
    2
    ns  
    ps/°C  
    HCOMP = +1 V, LCOMP = +1 V  
    <±100  
    <±350  
    <±200  
    450  
    <±200  
    <25  
    ps  
    ps  
    ps  
    ps  
    ps  
    ns  
    VIN = 0 V to 5 V  
    VIN = 0 V to 5 V  
    VIN = 1.0 V/ns  
    VIN = 0 V to 3 V, 3 V/ns  
    VIN = 0 V to 3 V, 3 V/ns, PW = 3 ns–8 ns  
    Settling to ±8 mV, VIN = 1 V to 0 V  
    Settling Time  
    Latch Timing  
    Input Pulsewidth  
    Setup Time  
    Hold Time  
    <1.5  
    <1.0  
    <1.0  
    ns  
    ns  
    ns  
    Specifications subject to change without notice.  
    REV. 0  
    –3–  
    AD53032–SPECIFICATIONS  
    ACTIVE LOAD SPECIFICATIONS  
    (All specifications are at TJ = +85؇C ؎ 5؇C, +VS = +12 V ؎ 3%, –VS = –7 V = ؎3% unless otherwise noted. All temperature coefficients are  
    measured at TJ = +75؇C to +95؇C).  
    Parameter  
    Min  
    Typ  
    Max  
    Units  
    Test Conditions  
    INPUT CHARACTERISTICS  
    INH, INHL  
    Input Voltage  
    –2  
    0
    V
    IOHC = +1 V, IOLC = +1 V, VCOM = +2 V, VDUT = 0 V  
    Bias Current  
    –250  
    250  
    µA  
    INHL, INHL = –2 V, 0 V  
    IOHC Current Program Range  
    IOH = 0 mA to –35 mA  
    IOLC Current Program Range  
    IOL = 0 mA to +35 mA  
    IOHC, IOLC Input Bias Current  
    IOLRTN, IOHRTN Range  
    VDUT Range  
    VDUT Range, IOH = 0 mA to –35 mA  
    VDUT Range, IOL = 0 mA to +35 mA  
    VCOMI Input Range  
    0
    3.5  
    V
    VDUT = –1.7 V, +8 V  
    0
    –300  
    –3  
    –3  
    –1.7  
    –3  
    3.5  
    300  
    8
    8
    8
    V
    µA  
    V
    V
    V
    VDUT = –3 V, +6.7 V  
    IOLC = 0 V, +3.5 V and IOHC = 0 V, +3.5 V  
    IOL = +35 mA, IOH = –35 mA, VDUT = –3 V, +8 V  
    IOL = +35 mA, IOH = –35 mA, IVDUT–VCOMI >1.3 V  
    VDUT –VCOM > 1.3 V  
    VCOM–VDUT > 1.3 V  
    IOL = +35 mA, IOH = –35 mA  
    8
    8
    V
    V
    –3  
    OUTPUT CHARACTERISTICS  
    Accuracy  
    Absolute Accuracy Error, Load Current  
    –0.4 – 200  
    +0.4 + 200 % ISET + µA IOL, IOH = 25 µA–35 mA, VCOM = 0 V, VDUT = ±2 V and  
    IOL = 25 µA–35 mA, VCOM = +8 V, VDUT = +6.7 V and  
    IOH = 25 µA–35 mA, VCOM = –3 V, VDUT = –1.7 V  
    VCOM Buffer  
    Offset Error  
    Bias Current  
    Gain Error  
    Linearity Error  
    Output Current TC  
    –50  
    –10  
    –0.2  
    –10  
    50  
    10  
    0.2  
    10  
    mV  
    µA  
    %
    mV  
    µA/°C  
    IOL, IOH = 35 mA, VCOMI = 0 V  
    VCOMI = 0 V  
    IOL, IOH = 35 mA, VCOMI = –2 V to +7 V  
    IOL, IOH = 35 mA, VCOMI = –2 V to +7 V  
    Measured at IOH, IOL = 200 µA  
    1
    <±2  
    DYNAMIC PERFORMANCE  
    Propagation Delay  
    ±IMAX to Inhibit  
    Inhibit to ±IMAX  
    Propagation Delay Matching  
    I/O Spike  
    Settling Time to 15 mV  
    Settling Time to 4 mV  
    0.8  
    1.5  
    –1.8  
    1.5  
    2.4  
    2.5  
    4.0  
    1.8  
    ns  
    ns  
    ns  
    mV  
    ns  
    µs  
    VCOM = ±3 V, IOL = +20 mA, IOH = –20 mA  
    VCOM = ±3 V, IOL = +20 mA, IOH = 20 mA  
    <250  
    <50  
    <10  
    VCOM = 0 V, IOL = +20 mA, IOH = –20 mA  
    IOL = +20 mA, IOH = –20 mA, 50 Ω Load, to 15 mV  
    IOL = +20 mA, IOH = –20 mA, 50 Ω Load, to 4 mV  
    Specifications subject to change without notice.  
    TOTAL FUNCTION SPECIFICATIONS  
    (All specifications are at TJ = +85؇C ؎ 5؇C, +VS = +12 V ؎ 3%, –VS = –7 V = ؎3% unless otherwise noted. All temperature coefficients are  
    measured at TJ = +75؇C to +95؇C).  
    Parameter  
    Min  
    Typ  
    Max  
    Units  
    Test Conditions  
    OUTPUT CHARACTERISTICS  
    Output Leakage Current, VOUT = –2 V to +7 V  
    Output Leakage Current, VOUT = –3 V to +8 V  
    Output Capacitance  
    –500  
    –2  
    +500  
    +2  
    nA  
    µA  
    pF  
    8
    Driver and Load INHIBITED  
    POWER SUPPLIES  
    Total Supply Range  
    Positive Supply  
    19  
    12  
    –7  
    V
    V
    V
    Negative Supply  
    Positive Supply Current  
    Negative Supply Current  
    Total Power Dissipation  
    Temperature Sensor Gain Factor  
    260  
    270  
    5.0  
    mA  
    mA  
    W
    Driver = INH, ILOAD Program = 35 mA, Load = Active  
    Driver = INH, ILOAD Program = 35 mA, Load = Active  
    Driver = INH, ILOAD Program = 35 mA, Load = Active  
    RLOAD = 10 kΩ, VSOURCE = +10 V  
    1
    µA/K  
    NOTES  
    Connecting or shorting the decoupling pins to ground will result in the destruction of the device.  
    Specifications subject to change without notice.  
    –4–  
    REV. 0  
    AD53032  
    Table I. Driver Truth Table  
    DATA  
    DATA  
    IOD  
    IOD  
    RLD  
    RLD  
    OUTPUT STATE  
    0
    1
    X
    X
    1
    0
    X
    X
    1
    1
    0
    0
    0
    0
    1
    1
    X
    X
    0
    X
    X
    1
    VL  
    VH  
    INH  
    VTERM  
    1
    0
    Table II. Comparator Truth Table  
    OUTPUT STATES  
    VOUT  
    >HCOMP  
    >HCOMP  
    <HCOMP  
    <HCOMP  
    X
    LEH  
    LEH  
    LEL  
    LEL  
    QH  
    QH  
    QL  
    QL  
    >LCOMP  
    <LCOMP  
    >LCOMP  
    <LCOMP  
    X
    1
    1
    1
    1
    0
    0
    0
    0
    0
    1
    1
    1
    1
    1
    0
    0
    0
    0
    0
    1
    1
    1
    0
    0
    0
    0
    1
    1
    1
    0
    1
    0
    0
    1
    0
    1
    QH (t-1) QH (t-1) QL (t-1)  
    QL (t-1)  
    Table III. Active Load Truth Table  
    OUTPUT STATES (Including Diode Bridge)  
    IOL  
    VDUT  
    INHL  
    INHL  
    IOH  
    I(VOUT)  
    <VCOM  
    >VCOM  
    X
    0
    0
    1
    1
    1
    0
    V(IOHC) × 10 mA  
    V(IOHC) × 10 mA  
    0
    V(IOLC) × 10 mA  
    V(IOLC) × 10 mA  
    0
    IOL  
    IOH  
    0
    REV. 0  
    –5–  
    AD53032  
    ABSOLUTE MAXIMUM RATINGS1  
    Environmental  
    Operating Temperature (Junction) . . . . . . . . . . . . . .+175°C  
    Storage Temperature . . . . . . . . . . . . . . . . –65°C to +150°C  
    Lead Temperature (Soldering, 10 sec)3 . . . . . . . . . .+260°C  
    Power Supply Voltage  
    +VS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +13 V  
    –VS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8 V  
    +VS to –VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 V  
    PWR GND to ECL GND or HQ GND . . . . . . . . . . ±0.4 V  
    Inputs  
    NOTES  
    1Stresses above those listed under Absolute Maximum Ratings may cause perma-  
    nent damage to the device. This is a stress rating only; functional operation of the  
    device at these or any other conditions above those indicated in the operational  
    sections of this specification is not implied. Absolute maximum limits apply  
    individually, not in combination. Exposure to absolute maximum rating condi-  
    tions for extended periods may affect device reliability.  
    DATA, DATA, IOD, IOD, RLD, RLD . . . . . . +5 V, –3 V  
    DATA to DATA, IOD to IOD, RLD to RLD . . . . . . . ±3 V  
    LEL, LEL, LEH, LEH . . . . . . . . . . . . . . . . . . . +5 V, –3 V  
    LEL to LEL, LEH to LEH . . . . . . . . . . . . . . . . . . . . . ±3 V  
    INHL, INHL . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 V, –3 V  
    INHL to INHL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3 V  
    VH, VL, VTERM, VCOM_I to GND . . . . . . . . +9 V, –4 V  
    VH to VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±11 V  
    (VH–VTERM) and (VTERM – VL) . . . . . . . . . . . . . ±11 V  
    IOHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V  
    IOLC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V  
    HCOMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +9 V, –4 V  
    LCOMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +9 V, –4 V  
    HCOMP, LCOMP to VOUT . . . . . . . . . . . . . . . . . . . ±11 V  
    Outputs  
    2Output short circuit protection is guaranteed as long as proper heatsinking is  
    employed to ensure compliance with the operating temperature limits.  
    3To ensure lead coplanarity (± 0.002 inches) and solderability, handling with bare  
    hands should be avoided and the device should be stored in environments at 24°C  
    ± 5°C (75°F ± 10°F) with relative humidity not to exceed 65%.  
    Table IV. Package Thermal Characteristics  
    Air Flow, FM  
    ␪JA, ؇C/W  
    0
    200  
    400  
    33  
    25  
    22  
    VOUT Short Circuit Duration . . . . . . . . . . . . . . . .Indefinite2  
    VOUT Inhibit Mode . . . . . . . . . . . . . . . . . . . . . . . +9 V, –4 V  
    VHDCPL . . . . . . . .Do Not Connect Except for Cap to VCC  
    VLDCPL . . . . . . . . Do Not Connect Except for Cap to VEE  
    QH, QH, QL, QL Maximum IOUT  
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
    Surge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA  
    THERM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +13 V, 0 V  
    IOHRTN, IOLRTN . . . . . . . . . . . . . . . . . . +8.5 V, –3.5 V  
    VCOM_S Short Circuit Duration . . . . . . . . . . . . . . . 3 sec2  
    ORDERING GUIDE  
    Shipment Method  
    Package  
    Description  
    Quantity per  
    Shipping Container  
    Package  
    Option  
    Model  
    AD53032JSTP  
    52-Lead LQFP-EDQUAD  
    90  
    SQ-52  
    CAUTION  
    ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
    accumulate on the human body and test equipment and can discharge without detection.  
    Although the AD53032 features proprietary ESD protection circuitry, permanent damage may  
    occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
    precautions are recommended to avoid performance degradation or loss of functionality.  
    WARNING!  
    ESD SENSITIVE DEVICE  
    –6–  
    REV. 0  
    AD53032  
    PIN CONFIGURATION  
    52 51 50 49 48 47 46 45 44 43 42 41 40  
    39  
    38  
    37  
    V
    1
    2
    V
    EE  
    CC  
    PIN 1  
    IDENTIFIER  
    DATA  
    ECLGND  
    DATA  
    3
    QL  
    36 INHL  
    4
    QL  
    35  
    INHL  
    5
    ECLGND  
    34  
    V
    6
    QH  
    AD53032  
    HEAT SINK UP  
    (Not to Scale)  
    CC  
    33 PWRGND  
    7
    QH  
    ECLGND  
    PWRGND  
    32  
    V
    8
    EE  
    31  
    V
    L
    9
    30  
    29  
    28  
    27  
    IOLC  
    10  
    11  
    12  
    13  
    LEL  
    LEL  
    IOHC  
    HQGND  
    LEH  
    LEH  
    IOHRTN  
    14 15 16 17 18 19 20 21 22 23 24 25 26  
    NC = NO CONNECT  
    REV. 0  
    –7–  
    AD53032  
    OUTLINE DIMENSIONS  
    Dimensions shown in inches and (mm).  
    52-Lead LQFP–EDQUAD with Integral Heat Slug  
    (SQ-52)  
    0.063 (1.60)  
    MAX  
    0.630 (16.00) SQ  
    0.551 (14.00) SQ  
    0.030 (0.75)  
    0.024 (0.60)  
    0.018 (0.45)  
    52  
    40  
    39  
    1
    SEATING  
    PLANE  
    0.270  
    (6.86)  
    DIA  
    TOP VIEW  
    (PINS DOWN)  
    STANDOFF  
    0.004 (0.10)  
    MAX  
    27  
    13  
    14  
    26  
    0.057 (1.45)  
    0.055 (1.40)  
    0.053 (1.35)  
    0.006 (0.15)  
    0.002 (0.05)  
    7؇  
    3.5؇  
    0؇  
    0.008 (0.20)  
    0.004 (0.09)  
    0.039 (1.00)  
    BSC  
    0.020 (0.50)  
    0.017 (0.42)  
    0.014 (0.35)  
    CENTER FIGURES ARE TYPICAL UNLESS OTHERWISE NOTED  
    –8–  
    REV. 0  
    配单直通车
    AD53032JSTP产品参数
    型号:AD53032JSTP
    是否无铅：含铅
    是否Rohs认证：不符合
    生命周期：Active
    IHS 制造商：ROCHESTER ELECTRONICS LLC
    零件包装代码：QFP
    包装说明：LQFP-52
    针数：52
    Reach Compliance Code：unknown
    风险等级：5.64
    Is Samacsys：N
    差分输出：NO
    驱动器位数：1
    输入特性：DIFFERENTIAL
    接口集成电路类型：LINE DRIVER
    接口标准：GENERAL PURPOSE
    JESD-30 代码：S-XQFP-G52
    JESD-609代码：e0
    长度：14 mm
    湿度敏感等级：3
    标称负供电电压：-7 V
    功能数量：1
    端子数量：52
    封装主体材料：UNSPECIFIED
    封装代码：HLQFP
    封装形状：SQUARE
    封装形式：FLATPACK, HEAT SINK/SLUG, LOW PROFILE
    峰值回流温度（摄氏度）：240
    认证状态：COMMERCIAL
    座面最大高度：1.6 mm
    最大供电电压：12.36 V
    最小供电电压：11.64 V
    标称供电电压：12 V
    表面贴装：YES
    端子面层：TIN LEAD
    端子形式：GULL WING
    端子节距：1 mm
    端子位置：QUAD
    处于峰值回流温度下的最长时间：30
    最大传输延迟：2.1 ns
    宽度：14 mm
    Base Number Matches：1
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