AD8616ARZ应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

Precision, 20 MHz, CMOS, Rail-to-Rail

Input/Output Operational Amplifiers

AD8615/AD8616/AD8618

FEATURES

current noise. The parts use a patented trimming technique

that achieves superior precision without laser trimming.

The AD8615/AD8616/AD8618 are fully specified to operate

from 2.7 V to 5 V single supplies.

Low offset voltage: 65 μV max

Single-supply operation: 2.7 V to 5.5 V

Low noise: 8 nV/√Hz

Wide bandwidth: >20 MHz

Slew rate: 12 V/μs

High output current: 150 mA

No phase reversal

Low input bias current: 1 pA

Low supply current: 2 mA

Unity-gain stable

The combination of 20 MHz bandwidth, low offset, low noise,

and very low input bias current make these amplifiers useful in

a wide variety of applications. Filters, integrators, photodiode

amplifiers, and high impedance sensors all benefit from the

combination of performance features. AC applications benefit

from the wide bandwidth and low distortion. The

AD8615/AD8616/AD8618 offer the highest output drive

capability of the DigiTrim^TMfamily, which is excellent for audio

line drivers and other low impedance applications.

APPLICATIONS

Barcode scanners

Battery-powered instrumentation

Multipole filters

Sensors

ASIC input or output amplifier

Audio

Photodiode amplification

Applications for the parts include portable and low powered

instrumentation, audio amplification for portable devices,

portable phone headsets, bar code scanners, and multipole

filters. The ability to swing rail-to-rail at both the input and

output enables designers to buffer CMOS ADCs, DACs, ASICs,

and other wide output swing devices in single-supply systems.

GENERAL DESCRIPTION

The AD8615/AD8616/AD8618 are specified over the extended

The AD8615/AD8616/AD8618 are dual/quad, rail-to-rail, input

and output, single-supply amplifiers featuring very low offset

voltage, wide signal bandwidth, and low input voltage and

industrial (–40°C to +125°C) temperature range. The AD8615

is available in 5-lead TSOT-23 packages. The AD8616 is availa-

ble in 8-lead MSOP and narrow SOIC surface-mount packages;

the MSOP version is available in tape and reel only. The

AD8618 is available in 14-lead SOIC and TSSOP packages.

PIN CONFIGURATIONS

OUT A

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

1

14

5

4

V+

OUT

V–

1

2

3

–IN A

+IN A

V+

+IN B

–IN B

AD8615

AD8618

TOP VIEW

(Not to Scale)

8

7

OUT B

–IN

+IN

Figure 4. 14-Lead TSSOP (RU-14)

Figure 1. 5-Lead TSOT-23 (UJ-5)

OUT A

IN A

1

2

3

4

5

6

7

14 OUT D

13 –IN D

12 +IN D

OUT A

–IN A

+IN A

V–

1

2

3

4

8

7

6

5

V+

–

AD8616

OUT B

–IN B

+IN B

+IN A

V+

TOP VIEW

(Not to Scale)

AD8618

11

10

9

V–

+IN B

–IN B

OUT B

+IN C

–IN C

OUT C

Figure 2. 8-Lead MSOP (RM-8)

8

OUT A

–IN A

+IN A

V–

1

2

3

4

8

7

6

5

V+

AD8616

OUT B

–IN B

+IN B

Figure 5. 14-Lead SOIC (R-14)

TOP VIEW

(Not to Scale)

Figure 3. 8-Lead SOIC (R-8)

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable.

However, no responsibility is assumed by Analog Devices for its use, nor for any

infringements of patents or other rights of third parties that may result from its use.

Specifications subject to change without notice. No license is granted by implication

or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

AD8615/AD8616/AD8618

TABLE OF CONTENTS

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 5

Thermal Resistance ...................................................................... 5

ESD Caution.................................................................................. 5

Typical Performance Characteristics ............................................. 6

Applications..................................................................................... 11

Input Overvoltage Protection ................................................... 11

Output Phase Reversal............................................................... 11

Driving Capacitive Loads.......................................................... 11

Overload Recovery Time .......................................................... 12

D/A Conversion ......................................................................... 12

Low Noise Applications............................................................. 12

High Speed Photodiode Preamplifier...................................... 13

Active Filters ............................................................................... 13

Power Dissipation....................................................................... 13

Power Calculations for Varying or Unknown Loads............. 14

Outline Dimensions....................................................................... 15

Ordering Guide .......................................................................... 17

REVISION HISTORY

6/05—Rev. B to Rev. C

Change to Table 1 ......................................................................... 3

Change to Table 2 ......................................................................... 4

Change to Figure 20 ..................................................................... 8

1/05—Rev. A to Rev. B

Added AD8615 ...............................................................Universal

Changes to Figure 12.................................................................... 8

Deleted Figure 19; Renumbered Subsequent Figures.............. 8

Changes to Figure 20.................................................................... 9

Changes to Figure 29.................................................................. 10

Changes to Figure 31.................................................................. 11

Deleted Figure 34; Renumbered Subsequent Figures............ 11

Deleted Figure 35; Renumbered Subsequent Figures............ 35

4/04—Rev. 0 to Rev. A

Added AD8618 ...............................................................Universal

Updated Outline Dimensions................................................... 16

1/04—Revision 0: Initial Version

Rev. C | Page 2 of 20

AD8615/AD8616/AD8618

SPECIFICATIONS

V_S=5 V, V_CM= V_S/2, T_A= 25°C, unless otherwise noted.

Table 1.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage AD8616/AD8618/

AD8615

V_OS

V_S= 3.5 V at V_CM= 0.5 V and 3.0 V

23

60

100

μV

V_CM= 0 V to 5 V

−40°C < T_A< +125°C

80

500

800

7

μV

μV/°C

Offset Voltage Drift AD8616/AD8618/

AD8615

Input Bias Current

∆V_OS/∆T

I_B

1.5

3

10

0.2

1

pA

V

−40°C < T_A< +85°C

−40°C < T_A< +125°C

50

550

0.5

50

250

5

Input Offset Current

I_OS

0.1

−40°C < T_A< +85°C

−40°C < T_A< +125°C

Input Voltage Range

0

Common-Mode Rejection Ratio

Large Signal Voltage Gain

Input Capacitance

CMRR

A_VO

C_DIFF

C_CM

V_CM= 0 V to 4.5 V

R_L= 2 kΩ, V_O= 0.5 V to 5 V

80

105

100

1500

2.5

dB

V/mV

pF

6.7

pF

OUTPUT CHARACTERISTICS

Output Voltage High

V_OH

I_L= 1 mA

I_L= 10 mA

−40°C < T_A< +125°C

I_L= 1 mA

I_L= 10 mA

4.98

4.88

4.7

4.99

4.92

V

mV

mA

Ω

Output Voltage Low

V_OL

7.5

70

15

100

200

−40°C < T_A< +125°C

Output Current

Closed-Loop Output Impedance

POWER SUPPLY

I_OUT

Z_OUT

150

3

f = 1 MHz, A_V= 1

Power Supply Rejection Ratio

Supply Current per Amplifier

PSRR

I_SY

V_S= 2.7 V to 5.5 V

V_O= 0 V

−40°C < T_A< +125°C

70

90

1.7

dB

mA

2.0

2.5

DYNAMIC PERFORMANCE

Slew Rate

Settling Time

Gain Bandwidth Product

Phase Margin

SR

t_s

GBP

Ø_m

R_L= 2 kΩ

To 0.01%

12

<0.5

24

V/μs

μs

MHz

Degrees

63

NOISE PERFORMANCE

Peak-to-Peak Noise

Voltage Noise Density

e_np-p

e_n

0.1 Hz to 10 Hz

f = 1 kHz

f = 10 kHz

f = 1 kHz

f = 10 kHz

f = 100 kHz

2.4

10

7

0.05

–115

–110

μV

nV/√Hz

pA/√Hz

dB

Current Noise Density

Channel Separation

i_n

Cs

dB

Rev. C | Page 3 of 20

AD8615/AD8616/AD8618

V_S= 2.7 V, V_CM= V_S/2, T_A= 25°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage AD8616/AD8618/

AD8615

V_OS

V_S= 3.5 V at V_CM= 0.5 V and 3.0 V

23

65

100

μV

V_CM= 0 V to 2.7 V

−40°C < T_A< +125°C

80

500

800

μV

Offset Voltage Drift AD8616/AD8618/

AD8615

Input Bias Current

∆V_OS/∆T

I_B

1.5

3

7

10

μV/°C

0.2

1

50

pA

V

−40°C < T_A< +85°C

−40°C < T_A< +125°C

550

0.5

50

250

2.7

Input Offset Current

I_OS

0.1

−40°C < T_A< +85°C

−40°C < T_A< +125°C

Input Voltage Range

0

Common-Mode Rejection Ratio

Large Signal Voltage Gain

Input Capacitance

CMRR

A_VO

C_DIFF

C_CM

V_CM= 0 V to 2.7 V

R_L= 2 kΩ, V_O= 0.5 V to 2.2 V

80

55

100

150

2.5

dB

V/mV

pF

7.8

pF

OUTPUT CHARACTERISTICS

Output Voltage High

V_OH

V_OL

I_L= 1 mA

−40°C < T_A< +125°C

I_L= 1 mA

2.65

2.6

2.68

11

V

mV

mA

Ω

Output Voltage Low

25

30

−40°C < T_A< +125°C

Output Current

Closed-Loop Output Impedance

POWER SUPPLY

I_OUT

Z_OUT

50

3

f = 1 MHz, A_V= 1

Power Supply Rejection Ratio

Supply Current per Amplifier

PSRR

I_SY

V_S= 2.7 V to 5.5 V

V_O= 0 V

−40°C < T_A< +125°C

70

90

1.7

dB

mA

2

2.5

DYNAMIC PERFORMANCE

Slew Rate

Settling Time

Gain Bandwidth Product

Phase Margin

SR

t_s

GBP

Ø_m

R_L= 2 kΩ

To 0.01%

12

< 0.3

23

V/μs

μs

MHz

Degrees

42

NOISE PERFORMANCE

Peak-to-Peak Noise

Voltage Noise Density

e_np-p

e_n

0.1 Hz to 10 Hz

f = 1 kHz

f = 10 kHz

f = 1 kHz

f = 10 kHz

f = 100 kHz

2.1

10

7

0.05

–115

–110

μV

nV/√Hz

pA/√Hz

dB

Current Noise Density

Channel Separation

i_n

Cs

dB

Rev. C | Page 4 of 20

AD8615/AD8616/AD8618

ABSOLUTE MAXIMUM RATINGS

Table 3.

THERMAL RESISTANCE

Parameter

Rating

θ_JAis specified for the worst-case conditions, that is, θ_JAis

specified for device soldered in circuit board for surface-mount

packages.

Supply Voltage

Input Voltage

6 V

GND to V_S

3 V

Indefinite

–65°C to +150°C

–40°C to +125°C

300°C

Differential Input Voltage

Output Short-Circuit Duration to GND

Storage Temperature

Operating Temperature Range

Lead Temperature Range (Soldering 60 sec)

Junction Temperature

Table 4.

Package Type

θ_JA

θ_JC

61

45

43

36

35

Unit

°C/W

5–Lead TSOT-23 (UJ)

8-Lead MSOP (RM)

8-Lead SOIC (R)

14-Lead SOIC (R)

14-Lead TSSOP (RU)

207

210

158

120

180

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or

any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. C | Page 5 of 20

AD8615/AD8616/AD8618

TYPICAL PERFORMANCE CHARACTERISTICS

2200

350

300

250

200

150

100

50

V

= 5V

S

V = ±2.5V

S

2000

1800

1600

1400

1200

1000

800

T

= 25°C

A

V

= 0V TO 5V

CM

600

400

200

0

–700

–500

–300

–100

100

300

V)

500

700

0

25

50

75

100

125

OFFSET VOLTAGE (

μ

TEMPERATURE (°C)

Figure 6. Input Offset Voltage Distribution

Figure 9. Input Bias Current vs. Temperature

22

20

18

16

14

12

10

8

1000

V

T

= ±2.5V

= –40°C TO +125°C

= 0V

S

V

T

= 5V

= 25°C

A

S

A

V

CM

100

10

SINK

SOURCE

6

1

4

2

0

0.1

0.001

0

2

4

6

8

10

12

100

0.01

0.1

I

1

10

(mA)

TCV

(μV/°C)

LOAD

OS

Figure 10. Output Voltage to Supply Rail vs. Load Current

Figure 7. Offset Voltage Drift Distribution

500

400

120

100

80

60

40

20

0

V

T

= 5V

= 25

S

A

V

= 5V

S

°C

300

10mA LOAD

200

100

0

–100

–200

–300

–400

–500

1mA LOAD

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

–40 –25 –10

5

20

35

50

65

C)

80

95 110 125

COMMON-MODE VOLTAGE (V)

TEMPERATURE (

°

Figure 8. Input Offset Voltage vs. Common-Mode Voltage

(200 Units, Five Wafer Lots Including Process Skews)

Figure 11. Output Saturation Voltage vs. Temperature

Rev. C | Page 6 of 20

AD8615/AD8616/AD8618

120

100

80

60

40

20

0

100

225

V

= ±2.5V

S

V

T

Ø

= ±2.5V

= 25°C

= 63°

S

A

80

60

40

20

0

180

135

90

45

0

m

–20

–40

–60

–45

–90

–135

–80

–180

–225

–100

1k

10k

100k

1M

10M

1M

10M

60M

FREQUENCY (Hz)

Figure 12. Open-Loop Gain and Phase vs. Frequency

Figure 15. Common-Mode Rejection Ratio vs. Frequency

120

100

80

60

40

20

0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

V

= ±2.5V

S

V

T

R

A

= 5.0V

S

= 4.9V p-p

IN

= 25°C

A

= 2k

= 1

Ω

L

V

1k

10k

100k

1M

10M

1k

10k

100k

1M

10M

FREQUENCY (Hz)

Figure 13. Closed-Loop Output Voltage Swing

Figure 16. PSRR vs. Frequency

50

45

40

35

30

25

20

15

10

5

100

90

80

70

60

50

40

30

20

10

0

V

= ±2.5V

V = 5V

S

R

= ∞

= 25

L

T

°C

A

= 1

V

–OS

+OS

A

= 100

A = 1

V

A

= 10

V

0

10

100

1000

1k

10k

100k

1M

10M

100M

FREQUENCY (Hz)

CAPACITANCE (pF)

Figure 17. Small-Signal Overshoot vs. Load Capacitance

Figure 14. Output Impedance vs. Frequency

Rev. C | Page 7 of 20

AD8615/AD8616/AD8618

2.4

2.2

2.0

V

= 5V

= 10kΩ

= 200pF

= 1

S

R

C

A

L

V

= 2.7V

S

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

V

= 5V

S

–40 –25 –10

5

20

35

50

65

C)

80

95 110 125

TIME (1μs/DIV)

TEMPERATURE (

°

Figure 18. Supply Current vs. Temperature

Figure 21. Small-Signal Transient Response

2000

1800

1600

1400

1200

1000

800

V

= 5V

S

R

C

A

= 10kΩ

= 200pF

= 1

L

V

600

400

200

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

SUPPLY VOLTAGE (V)

TIME (1μs/DIV)

Figure 22. Large-Signal Transient Response

Figure 19. Supply Current vs. Supply Voltage

0.1

0.01

1k

V

A

= ±2.5V

= 0.5V rms

= 1

S

V

= ±2.5V

= ±1.35V

S

IN

V

BW = 22kHz

= 100k

R

Ω

L

100

0.001

0.0001

10

1

20

100

1k

20k

10

100

1k

10k

100k

FREQUENCY (Hz)

Figure 20. Voltage Noise Density vs. Frequency

Figure 23. THD + N

Rev. C | Page 8 of 20

AD8615/AD8616/AD8618

500

400

V

A

= ±2.5V

= 2V p-p

= 10

V

T

= 2.7V

= 25°C

S

A

IN

V

300

200

100

0

–100

–200

–300

–400

–500

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

TIME (200ns/DIV)

COMMON-MODE VOLTAGE (V)

Figure 24. Settling Time

Figure 27. Input Offset Voltage vs. Common-Mode Voltage

(200 Units, Five Wafer Lots Including Process Skews)

500

400

V

T

= 3.5V

= 25°C

V

= 2.7V

S

A

S

300

200

100

0

–100

–200

–300

–400

–500

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TIME (1s/DIV)

COMMON-MODE VOLTAGE (V)

Figure 25. 0.1 Hz to 10 Hz Input Voltage Noise

Figure 28. Input Offset Voltage vs. Common-Mode Voltage

(200 Units, Five Wafer Lots Including Process Skews)

1000

1400

1200

1000

800

600

400

200

0

V

= 2.7V

= 25°C

= 0V TO 2.7V

S

V

T

= ±1.35V

= 25°C

S

A

T

A

V

CM

100

10

SOURCE

SINK

1

0.1

0.001

–700

–500

–300

–100

100

300

500

700

0.01

0.1

(mA)

1

10

I

LOAD

OFFSET VOLTAGE (μV)

Figure 29. Output Voltage to Supply Rail vs. Load Current

Figure 26. Input Offset Voltage Distribution

Rev. C | Page 9 of 20

AD8615/AD8616/AD8618

18

50

45

40

35

30

25

20

15

10

5

V

= 2.7V

V

= ±1.35V

S

16

14

12

10

8

R

= ∞

L

T

= 25°C

V

@ 1mA LOAD

A

OH

A

= 1

V

@ 1mA LOAD

OL

–OS

+OS

6

4

2

0

10

100

CAPACITANCE (pF)

1000

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 30. Output Saturation Voltage vs. Temperature

Figure 33. Small-Signal Overshoot vs. Load Capacitance

100

225

V

= 2.7V

= 10kΩ

= 200pF

= 1

S

V

T

Ø

= ±1.35V

= 25°C

= 42°

R

C

A

S

L

V

80

60

40

20

0

180

135

90

45

0

A

m

–20

–40

–60

–45

–90

–135

–80

–180

–225

–100

1M

10M

60M

FREQUENCY (Hz)

TIME (1μs/DIV)

Figure 31. Open-Loop Gain and Phase vs. Frequency

Figure 34. Small-Signal Transient Response

2.7

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

0

V

= 2.7V

S

V

T

R

A

= 2.7V

S

R

C

A

= 10kΩ

= 200pF

= 1

L

= 2.6V p-p

IN

A

L

V

= 25

= 2k

= 1

°C

Ω

L

V

1k

10k

100k

1M

10M

FREQUENCY (Hz)

TIME (1μs/DIV)

Figure 32. Closed-Loop Output Voltage Swing vs. Frequency

Figure 35. Large-Signal Transient Response

Rev. C | Page 10 of 20

AD8615/AD8616/AD8618

APPLICATIONS

This reduces the overshoot and minimizes ringing, which

in turn improves the frequency response of the AD8615/

AD8616/AD8618. One simple technique for compensation is

the snubber, which consists of a simple RC network. With this

circuit in place, output swing is maintained and the amplifier

is stable at all gains.

INPUT OVERVOLTAGE PROTECTION

The AD8615/AD8616/AD8618 have internal protective cir-

cuitry that allows voltages exceeding the supply to be applied

at the input.

It is recommended, however, not to apply voltages that exceed

the supplies by more than 1.5 V at either input of the amplifier.

If a higher input voltage is applied, series resistors should be

used to limit the current flowing into the inputs.

Figure 38 shows the implementation of the snubber, which

reduces overshoot by more than 30% and eliminates ringing

that can cause instability. Using the snubber does not recover

the loss of bandwidth incurred from a heavy capacitive load.

The input current should be limited to <5 mA. The extremely

low input bias current allows the use of larger resistors, which

allows the user to apply higher voltages at the inputs. The use

of these resistors adds thermal noise, which contributes to the

overall output voltage noise of the amplifier.

V

A

C

= ±2.5V

= 1

= 500pF

S

V

L

For example, a 10 kΩ resistor has less than 13 nV/√Hz of

thermal noise and less than 10 nV of error voltage at room

temperature.

OUTPUT PHASE REVERSAL

The AD8615/AD8616/AD8618 are immune to phase

inversion, a phenomenon that occurs when the voltage

applied at the input of the amplifier exceeds the maxi-

mum input common mode.

TIME (2μs/DIV)

Phase reversal can cause permanent damage to the ampli-

fier and can create lock-ups in systems with feedback loops.

Figure 37. Driving Heavy Capacitive Loads Without Compensation

V

A

R

= ±2.5V

S

V

CC

= 6V p-p

= 1

IN

V

L

= 10kΩ

+

–

V–

V+

200Ω

500pF

+

–

500pF

V

EE

200mV

V

OUT

V

IN

Figure 38. Snubber Network

V

= ±2.5V

= 1

S

A

R

C

V

S

L

= 200

Ω

= 500pF

TIME (2ms/DIV)

Figure 36. No Phase Reversal

DRIVING CAPACITIVE LOADS

Although the AD8615/AD8616/AD8618 are capable of driving

capacitive loads of up to 500 pF without oscillating, a large

amount of overshoot is present when operating at frequencies

above 100 kHz. This is especially true when the amplifier is

configured in positive unity gain (worst case). When such large

capacitive loads are required, the use of external compensation

is highly recommended.

TIME (10μs/DIV)

Figure 39. Driving Heavy Capacitive Loads Using the Snubber Network

Rev. C | Page 11 of 20

AD8615/AD8616/AD8618

5V

2.5V

OVERLOAD RECOVERY TIME

10

μF

+

Overload recovery time is the time it takes the output of the

amplifier to come out of saturation and recover to its linear

region. Overload recovery is particularly important in applica-

tions where small signals must be amplified in the presence of

large transients. Figure 40 and Figure 41 show the positive and

negative overload recovery times of the AD8616. In both cases,

the time elapsed before the AD8616 comes out of saturation is

less than 1 μs. In addition, the symmetry between the positive

and negative recovery times allows excellent signal rectification

without distortion to the output signal.

0.1μF

SERIAL

INTERFACE

V

REFF

REFS

DD

1/2

AD8616

CS

UNIPOLAR

OUTPUT

DIN

AD5542

OUT

SCLK

LDAC

DGND

AGND

Figure 42. Buffering DAC Output

LOW NOISE APPLICATIONS

V

R

A

= ±2.5V

= 10kΩ

= 100

S

L

Although the AD8618 typically has less than 8 nV/√Hz of

voltage noise density at 1 kHz, it is possible to reduce it fur-

ther. A simple method is to connect the amplifiers in parallel,

as shown in Figure 43. The total noise at the output is divided

by the square root of the number of amplifiers. In this case, the

total noise is approximately 4 nV/√Hz at room temperature.

The 100 Ω resistor limits the current and provides an effective

output resistance of 50 Ω.

V

+2.5V

V

= 50mV

IN

0V

3

V

IN

R3

–50mV

V+

V–

1

R1

2

100Ω

10Ω

TIME (1μs/DIV)

R2

Figure 40. Positive Overload Recovery

1kΩ

V

= ±2.5V

S

3

R

= 10kΩ

= 100

= 50mV

L

V

R6

V+

V–

A

V

R4

2

IN

100Ω

10Ω

–2.5V

0V

R5

V

OUT

1kΩ

3

2

R9

V+

V–

R7

100Ω

10Ω

R8

+50mV

1kΩ

3

2

TIME (1μs/DIV)

R12

V+

V–

R10

100Ω

Figure 41. Negative Overload Recovery

10Ω

D/A CONVERSION

R11

The AD8616 can be used at the output of high resolution DACs.

Their low offset voltage, fast slew rate, and fast settling time

make the parts suitable to buffer voltage output or current

output DACs.

1kΩ

Figure 43. Noise Reduction

Figure 42 shows an example of the AD8616 at the output of the

AD5542. The AD8616’s rail-to-rail output and low distortion

help maintain the accuracy needed in data acquisition systems

and automated test equipment.

Rev. C | Page 12 of 20

AD8615/AD8616/AD8618

10

0

HIGH SPEED PHOTODIODE PREAMPLIFIER

The AD8615/AD8616/AD8618 are excellent choices for I-to-V

conversions. The very low input bias, low current noise, and

high unity-gain bandwidth of the parts make them suitable,

especially for high speed photodiode preamps.

–10

–20

–30

–40

In high speed photodiode applications, the diode is operated

in a photoconductive mode (reverse biased). This lowers the

junction capacitance at the expense of an increase in the

amount of dark current that flows out of the diode.

The total input capacitance, C1, is the sum of the diode and op

amp input capacitances. This creates a feedback pole that causes

degradation of the phase margin, making the op amp unstable.

Therefore, it is necessary to use a capacitor in the feedback to

compensate for this pole.

0.1

1

10

100

1k

10k

100k

1M

FREQUENCY (Hz)

Figure 46. Second-Order Butterworth, Low-Pass Filter Frequency Response

POWER DISSIPATION

To get the maximum signal bandwidth, select

Although the AD8615/AD8616/AD8618 are capable of

providing load currents up to 150 mA, the usable output, load

current, and drive capability is limited to the maximum power

dissipation allowed by the device package.

C1

2πR2 f_U

C2 =

where f_Uis the unity-gain bandwidth of the amplifier.

In any application, the absolute maximum junction temperature

for the AD8615/AD8616/AD8618 is 150°C. This should never

be exceeded because the device could suffer premature failure.

Accurately measuring power dissipation of an integrated circuit

is not always a straightforward exercise; Figure 47 is a design aid

for setting a safe output current drive level or selecting a heat

sink for the package options available on the AD8616.

C2

R2

+2.5V

–

V–

I

R

C

IN

D

SH

D

V+

1.5

+

–2.5V

–V

BIAS

Figure 44. High Speed Photodiode Preamplifier

1.0

SOIC

ACTIVE FILTERS

The low input-bias current and high unity-gain bandwidth

of the AD8616 make it an excellent choice for precision filter

design.

MSOP

0.5

Figure 45 shows the implementation of a second-order, low-

pass filter. The Butterworth response has a corner frequency

of 100 kHz and a phase shift of 90°. The frequency response

is shown in Figure 46.

0

20

40

60

80

100

120

140

TEMPERATURE (

°

C)

2nF

Figure 47. Maximum Power Dissipation vs. Ambient Temperature

V

CC

V–

V+

1.1kΩ

V

1nF

IN

V

EE

Figure 45. Second-Order, Low-Pass Filter

Rev. C | Page 13 of 20

AD8615/AD8616/AD8618

Calculating Power by Measuring Ambient and Case

Temperature

These thermal resistance curves were determined using

the AD8616 thermal resistance data for each package and

a maximum junction temperature of 150°C. The following

formula can be used to calculate the internal junction tem-

perature of the AD8615/AD8616/AD8618 for any application:

The two equations for calculating junction temperature are

T_J= T_A+ P θ_JA

where:

T_J= P_DISS× θ_JA+ T_A

T_J= junction temperature

T_A= ambient temperature

where:

θ_JA= the junction-to-ambient thermal resistance

T_J= junction temperature

P_DISS= power dissipation

θ_JA= package thermal resistance, junction-to-case

T_J= T_C+ P θ_JC

T_A= ambient temperature of the circuit

where T_Cis case temperature and θ_JAand θ_JCare given in the

data sheet.

To calculate the power dissipated by the AD8615/

AD8616/AD8618, use

The two equations for calculating P (power) are

T_A+ P θ_JA= T_C+ P θ_JC

P_DISS= I_LOAD× (V_S– V_OUT

)

where:

P = (T_A– T_C)/(θ_JC– θ_JA)

I_LOAD= output load current

V_S= supply voltage

V_OUT= output voltage

Once power has been determined, it is necessary to recalculate

the junction temperature to ensure that it has not been

exceeded.

The quantity within the parentheses is the maximum voltage

developed across either output transistor.

The temperature should be measured directly on and near the

package, but not touching it. Measuring the package can be

difficult. A very small bimetallic junction glued to the package

can be used, or an infrared sensing device can be used if the

spot size is small enough.

POWER CALCULATIONS FOR VARYING OR

UNKNOWN LOADS

Often, calculating power dissipated by an integrated circuit to

determine if the device is being operated in a safe range is not

as simple as it might seem. In many cases, power cannot be

directly measured. This may be the result of irregular output

waveforms or varying loads. Indirect methods of measuring

power are required.

Calculating Power by Measuring Supply Current

Power can be calculated directly if the supply voltage and

current are known. However, the supply current can have a dc

component with a pulse directed into a capacitive load, which

could make the rms current very difficult to calculate. This

difficulty can be overcome by lifting the supply pin and

inserting an rms current meter into the circuit. For this method

to work, make sure the current is delivered by the supply pin

being measured. This is usually a good method in a single-

supply system; however, if the system uses dual supplies, both

supplies may need to be monitored.

There are two methods to calculate power dissipated by

an integrated circuit. The first is to measure the package

temperature and the board temperature. The second is

to directly measure the circuits supply current.

Rev. C | Page 14 of 20

AD8615/AD8616/AD8618

OUTLINE DIMENSIONS

3.00

BSC

8.75 (0.3445)

8.55 (0.3366)

8

1

5

4

14

1

8

4.00 (0.1575)

3.80 (0.1496)

6.20 (0.2441)

5.80 (0.2283)

4.90

BSC

3.00

BSC

7

1.27 (0.0500)

BSC

0.50 (0.0197)

0.25 (0.0098)

PIN 1

1.75 (0.0689)

1.35 (0.0531)

× 45°

0.25 (0.0098)

0.10 (0.0039)

0.65 BSC

8°

0°

1.10 MAX

0.15

0.00

0.51 (0.0201)

0.31 (0.0122)

SEATING

PLANE

1.27 (0.0500)

0.40 (0.0157)

COPLANARITY

0.10

0.25 (0.0098)

0.17 (0.0067)

0.80

0.60

0.40

8°

0°

0.38

0.22

0.23

0.08

COMPLIANT TO JEDEC STANDARDS MS-012-AB

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS

COPLANARITY

0.10

SEATING

PLANE

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 48. 8-Lead Mini Small Outline Package [MSOP]

(RM-8)

Figure 50. 14-Lead Standard Small Outline Package [SOIC]

Narrow Body (R-14)

Dimensions shown in millimeters

Dimensions shown in millimeters and (inches)

5.10

5.00

4.90

5.00 (0.1968)

4.80 (0.1890)

8

1

5

4

14

8

7

6.20 (0.2440)

5.80 (0.2284)

4.00 (0.1574)

3.80 (0.1497)

4.50

4.40

4.30

6.40

BSC

1.27 (0.0500)

BSC

0.50 (0.0196)

0.25 (0.0099)

1

× 45°

1.75 (0.0688)

1.35 (0.0532)

PIN 1

0.25 (0.0098)

0.10 (0.0040)

0.65

BSC

1.05

1.00

0.80

8°

0.51 (0.0201)

0.31 (0.0122)

0.20

0.09

0° 1.27 (0.0500)

COPLANARITY

0.10

0.25 (0.0098)

0.17 (0.0067)

1.20

SEATING

PLANE

0.75

0.60

0.45

0.40 (0.0157)

MAX

8°

0°

0.15

0.05

0.30

0.19

SEATING

PLANE

COMPLIANT TO JEDEC STANDARDS MS-012-AA

COPLANARITY

0.10

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

COMPLIANT TO JEDEC STANDARDS MO-153-AB-1

Figure 51. 14-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-14)

Figure 49. 8-Lead Standard Small Outline Package [SOIC]

Narrow Body (R-8)

Dimensions shown in millimeters

Dimensions shown in millimeters and (inches)

Rev. C | Page 15 of 20

AD8615/AD8616/AD8618

2.90 BSC

5

1

4

3

2.80 BSC

1.60 BSC

2

PIN 1

0.95 BSC

1.90

BSC

*

0.90

0.87

0.84

*

1.00 MAX

0.20

0.08

8°

4°

0°

0.10 MAX

0.60

0.45

0.30

0.50

0.30

SEATING

PLANE

*

COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH

THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.

Figure 52. 5-Lead Thin Small Outline Transistor Package [TSOT]

(UJ-5)

Dimensions shown in millimeters

Rev. C | Page 16 of 20

AD8615/AD8616/AD8618

ORDERING GUIDE

Model

Temperature Range

–40°C to +125°C

Package Description

5-Lead TSOT-23

8-Lead MSOP

8-Lead SOIC

Package Option

Branding

AD8615AUJZ-R2¹

AD8615AUJZ-REEL¹

AD8615AUJZ-REEL7¹

AD8616ARM-R2

AD8616ARM-REEL

AD8616ARMZ-R2¹

AD8616ARMZ-REEL¹

AD8616AR

AD8616AR-REEL

AD8616AR-REEL7

AD8616ARZ¹

AD8616ARZ-REEL¹

AD8616ARZ-REEL7¹

AD8618AR

AD8618AR-REEL

AD8618AR-REEL7

AD8618ARZ¹

AD8618ARZ-REEL¹

AD8618ARZ-REEL7¹

AD8618ARU

AD8618ARU-REEL

AD8618ARUZ¹

AD8618ARUZ-REEL¹

UJ-5

RM-8

R-8

BKA

BLA

A0K

8-Lead SOIC

R-8

14-Lead SOIC

14-Lead TSSOP

R-14

RU-14

¹Z = Pb-free part.

Rev. C | Page 17 of 20

AD8615/AD8616/AD8618

NOTES

Rev. C | Page 18 of 20

AD8615/AD8616/AD8618

NOTES

Rev. C | Page 19 of 20

AD8615/AD8616/AD8618

NOTES

©

registered trademarks are the property of their respective owners.

D04648–0–6/05(C)

Rev. C | Page 20 of 20

型号:	AD8616ARZ
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS INC
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.15
Is Samacsys：	N
放大器类型：	OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)：	0.00055 µA
标称共模抑制比：	100 dB
最大输入失调电压：	800 µV
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
长度：	4.9 mm
湿度敏感等级：	1
功能数量：	2
端子数量：	8
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
座面最大高度：	1.75 mm
标称压摆率：	12 V/us
子类别：	Operational Amplifier
供电电压上限：	6 V
标称供电电压 (Vsup)：	2.7 V
表面贴装：	YES
技术：	CMOS
温度等级：	AUTOMOTIVE
端子面层：	MATTE TIN
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
标称均一增益带宽：	23000 kHz
宽度：	3.9 mm
Base Number Matches：	1

电子百科

产品导航

产品型号AD8616ARZ的概述

产品型号AD8616ARZ的Datasheet PDF文件预览

AD8616ARZ相关产品

AD8616ARZ相关文章

IC37:专业IC行业平台