V = +5 V ؎ 10% (ADM223, 31L,
32L, 34L, 36L, 38L, 39L, 41L);
CC
ADM223/ADM230L–ADM241L–SPECIFICATIONS
V = +5 V ؎ 5% (ADM230L, 33L, 35L, 37L); V+ = 7.5 V to 13.2 V (ADM231L & ADM239L); C1–C4 = 1.0 F Ceramic. All Specifications TMIN to
CC
TMAX unless otherwise noted.)
P aram eter
Min Typ Max Units Test Conditions/Com m ents
Output Voltage Swing
VCC Power Supply Current
±5
±9
2
3.5
0.4
1.5
1
Volts All T ransmitter Outputs Loaded with 3 kΩ to Ground
3.0
6
1
4
5
mA
mA
mA
mA
µA
V
V
µA
V
No Load, All TINS = VCC (Except ADM223)
No Load, All TINS = GND
ADM231L, ADM239L
V+ Power Supply Current
Shutdown Supply Current
No Load, V+ = 12 V ADM231L & ADM239L Only
Input Logic T hreshold Low, VINL
Input Logic T hreshold High, VINH
Logic Pull-Up Current
RS-232 Input Voltage Range
RS-232 Input T hreshold Low
RS-232 Input T hreshold High
RS-232 Input Hysteresis
0.8
TIN, EN, SD, EN, SD
TIN, EN, SD, EN, SD
TIN = 0 V
2.0
10
25
+30
–30
0.8
1.2
1.7
0.5
5
V
V
V
2.4
1.0
7
0.2
3
RS-232 Input Resistance
kΩ
V
V
T T L/CMOS Output Voltage Low, VOL
T T L/CMOS Output Voltage High, VOH
T T L/CMOS Output Leakage Current
0.4
3.5
IOUT = –1.0 mA
0.05 ±5
250
µA
ns
EN = VCC, 0 V ≤ ROUT ≤ VCC
ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. CL = 150 pF)
Output Enable T ime (TEN
)
Output Disable T ime (TDIS
)
50
ns
ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. RL = 1 kΩ)
Propagation Delay
0.5
25
µs
RS-232 to T T L
Instantaneous Slew Rate1
30
V/µs CL = 10 pF, RL = 3-7 kΩ, T A = +25°C
T ransition Region Slew Rate
5
V/µs RL = 3 kΩ, CL = 2500 pF
Measured from +3 V to –3 V or –3 V to +3 V
VCC = V+ = V– = 0 V, VOUT = ±2 V
Output Resistance
300
Ω
RS-232 Output Short Circuit Current
±10
mA
NOT E
1Sample tested to ensure compliance.
Specifications subject to change without notice.
ABSO LUTE MAXIMUM RATINGS*
(T A = 25°C unless otherwise noted)
T hermal Impedance, θJA
N-14 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
N-16 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135°C/W
N-20 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120°C/W
N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
R-16 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-20 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85°C/W
R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C/W
D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Operating T emperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . . 0 to +70°C
Industrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage T emperature Range . . . . . . . . . . . –65°C to + 150°C
Lead T emperature, Soldering . . . . . . . . . . . . . . . . . . +300°C
Vapour Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2000 V
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC – 0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
T IN . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 V
Output Voltages
T OUT . . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, – 0.3 V)
ROUT . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
Short Circuit Duration
T OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Power Dissipation
N-14 DIP (Derate 10 mW/°C above +70°C) . . . . . 800 mW
N-16 DIP (Derate 10.5 mW/°C above +70°C) . . . 840 mW
N-20 DIP (Derate 11 mW/°C above +70°C) . . . . . 890 mW
N-24 DIP (Derate 13.5 mW/°C above +70°C) . . 1000 mW
N-24A DIP (Derate 13.5 mW/°C above +70°C) . . 500 mW
R-16 SOIC (Derate 9 mW/°C above +70°C) . . . . . 760 mW
R-20 SOIC (Derate 9.5 mW/°C above +70°C) . . . 800 mW
R-24 SOIC (Derate 12 mW/°C above +70°C) . . . . 850 mW
R-28 SOIC (Derate 12.5 mW/°C above +70°C) . . 900 mW
RS-28 SSOP (Derate 10 mW/°C above +70°C) . . . 900 mW
Q-14 Cerdip (Derate 10 mW/°C above +70°C) . . . 720 mW
Q-16 Cerdip (Derate 10 mW/°C above +70°C) . . . 800 mW
Q-20 Cerdip (Derate 11.2 mW/°C above +70°C) . . . 890 mW
Q-24 Cerdip (Derate 12.5 mW/°C above +70°C) . . 1000 mW
D-24 Ceramic (Derate 20 mW/°C above +70°C) . . 1000 mW
*T his is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for
extended periods of time may affect reliability.
–2–
REV. 0