ADP1864
MOSFET
INPUT CAPACITOR
Choose the external P-channel MOSFET based on the following:
Vt (threshold voltage), maximum voltage and current ratings,
RDS(ON), and gate charge.
The input capacitor provides a low impedance path for the
pulsed current drawn by the external P-channel FET. Choose an
input capacitor whose impedance at the switching frequency is
lower than the impedance of the voltage source (VIN). The
preferred input capacitor is a 10μF ceramic capacitor due to its
low ESR and low impedance.
The minimum operating voltage of the ADP1864 is 3.15 V.
Choose a MOSFET with a Vt that is at least 1 V lower than the
minimum input supply voltage used in the application.
For all types of capacitors, make sure the ripple current rating of
the capacitor is greater than half of the maximum output load
current.
Ensure that the maximum ratings for MOSFET VGS and VDS are
a few volts greater than the maximum input voltage used with
the ADP1864.
Where space is limited, multiple capacitors can be placed in
parallel to meet the rms current requirement. Place the input
capacitor as close as possible to the IN pin of the ADP1864.
Estimate the rms current in the MOSFET under continuous
conduction mode by
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
VOUT +VD
OUTPUT CAPACITOR
IMOSFET
=
RMS)
×ILOAD
(
(
VIN +VD
)
The ESR and capacitance value of the output capacitor
determine the amount of output voltage ripple:
Derate the MOSFET current by at least ±02 to account for
inductor ripple and changes in the diode voltage.
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
ΔV ≅ ΔI ×
+ ESRCOUT
8 × f × COUT
The MOSFET power dissipation is the sum of the conducted
and the switching losses:
where f = oscillator frequency (typically 580 kHz).
±
PDMOSFET
=
COND)
IMOSFET(RMS)
×
1+T ×RDS(ON)
(
Because the output capacitance is typically >40 μF, the ESR
dominates the voltage ripple. Ensure the output capacitor ripple
rating is greater than the maximum inductor ripple.
where T is 0.005/˚C × (MOSFET Junction Temperature − ±5˚C).
Ensure the maximum power dissipation calculated is signif-
icantly less than the maximum rating of the MOSFET.
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
(
VOUT + VD
)
×
VIN − VOUT
)
1
Irms
≅
×
± × 3
L × f ×VIN
DIODE
The diode carries the inductor current during the off time of
the external FET. The average current of the diode is, therefore,
dependent on the duty cycle of the controller as well as the
output load current.
POSCAP capacitors from Sanyo offer a good size, ESR, ripple,
and current capability trade-off.
⎛
⎞
⎟
⎟
⎠
(
VOUT + VD
)
⎜
IDIODE ) = 1 −
× ILOAD
(
AV
⎜
(
VIN + VD
)
⎝
where VD is the diode forward drop. A typical Schottky diode
has a 0.5 V forward drop.
A Schottky diode is recommended for best efficiency because
it has a low forward drop and faster switching speed than
junction diodes. If a junction diode is used it must be an
ultrafast recovery diode. The low forward drop reduces the
power losses during the FET off time, and fast switching speed
reduces the switching losses during PFET transitions.
Rev. 0 | Page 11 of 16