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Ultralow Noise, LDO XFET^®Voltage

References with Current Sink and Source

ADR440/ADR441/ADR443/ADR444/ADR445

FEATURES

PIN CONFIGURATIONS

Ultralow noise (0.1 Hz to 10 Hz)

ADR440: 1 μV p-p

ADR441: 1.2 μV p-p

ADR443: 1.4 μV p-p

ADR444: 1.8 μV p-p

ADR445: 2.25 μV p-p

Superb temperature coefficient

A Grade: 10 ppm/°C

ADR440/

TP

1

2

3

4

8

7

6

5

TP

ADR441/

ADR443/

ADR444/

ADR445

V

NC

IN

NC

V

OUT

TOP VIEW

(Not to Scale)

GND

TRIM

NOTES

1. NC = NO CONNECT

2. TP = TEST PIN (DO NOT CONNECT)

Figure 1. 8-Lead SOIC_N (R-Suffix)

B Grade: 3 ppm/°C

Low dropout operation: 500 mV

Input range: (V_OUT+ 500 mV) to 18 V

High output source and sink current: +10 mA and −5 mA

Wide temperature range: −40°C to +125°C

ADR440/

TP

1

2

3

4

8

7

6

5

TP

ADR441/

ADR443/

ADR444/

ADR445

V

NC

IN

NC

V

OUT

TOP VIEW

(Not to Scale)

APPLICATIONS

GND

TRIM

Precision data acquisition systems

High resolution data converters

Battery-powered instrumentations

Portable medical instruments

Industrial process control systems

Precision instruments

NOTES

1. NC = NO CONNECT

2. TP = TEST PIN (DO NOT CONNECT)

Figure 2. 8-Lead MSOP (RM-Suffix)

Optical control circuits

GENERAL DESCRIPTION

Offered in two electrical grades, the ADR44x family is avail-

able in 8-lead MSOP and narrow SOIC packages. All versions

are specified over the extended industrial temperature range of

−40°C to +125°C.

The ADR44x series is a family of XFET voltage references

featuring ultralow noise, high accuracy, and low temperature

drift performance. Using Analog Devices, Inc., patented

temperature drift curvature correction and XFET (eXtra

implanted junction FET) technology, voltage change vs.

temperature nonlinearity in the ADR44x is greatly minimized.

Table 1. Selection Guide

Output

Voltage

(V)

Initial

Accuracy,

(mV)

Temperature

Coefficient

(ppm/°C)

The XFET references offer better noise performance than

buried Zener references, and XFET references operate off

low supply voltage headroom (0.5 V). This combination of

features makes the ADR44x family ideally suited for precision

signal conversion applications in high-end data acquisition

systems, optical networks, and medical applications.

Model

ADR440A 2.048

ADR440B 2.048

ADR441A 2.500

ADR441B 2.500

ADR443A 3.000

ADR443B 3.000

ADR444A 4.096

ADR444B 4.096

ADR445A 5.000

ADR445B 5.000

3

1

3

1

4

1.2

5

1.6

6

2

10

3

10

3

10

3

10

3

The ADR44x family has the capability to source up to 10 mA of

output current and sink up to 5 mA. It also comes with a trim

terminal to adjust the output voltage over a 0.5% range without

compromising performance.

10

3

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

ADR440/ADR441/ADR443/ADR444/ADR445

TABLE OF CONTENTS

Theory of Operation ...................................................................... 14

Power Dissipation Considerations........................................... 14

Basic Voltage Reference Connections ..................................... 14

Noise Performance..................................................................... 14

Turn-On Time ............................................................................ 14

Applications..................................................................................... 15

Output Adjustment .................................................................... 15

Bipolar Outputs .......................................................................... 15

Negative Reference..................................................................... 15

Programmable Voltage Source ................................................. 16

Programmable Current Source ................................................ 16

High Voltage Floating Current Source.................................... 16

Precision Output Regulator (Boosted Reference).................. 17

Outline Dimensions....................................................................... 18

Ordering Guide .......................................................................... 19

Features .............................................................................................. 1

Applications....................................................................................... 1

Pin Configurations ........................................................................... 1

General Description......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

ADR440 Electrical Characteristics............................................. 3

ADR441 Electrical Characteristics............................................. 4

ADR443 Electrical Characteristics............................................. 5

ADR444 Electrical Characteristics............................................. 6

ADR445 Electrical Characteristics............................................. 7

Absolute Maximum Ratings............................................................ 8

Thermal Resistance ...................................................................... 8

ESD Caution.................................................................................. 8

Typical Performance Characteristics ............................................. 9

REVISION HISTORY

9/06—Rev. 0 to Rev. A

Updated Format..................................................................Universal

Changes to Features.......................................................................... 1

Changes to Pin Configurations....................................................... 1

Changes to the Specifications Section ........................................... 3

Changes to Figure 4 and Figure 5................................................... 9

Inserted Figure 6 and Figure 7........................................................ 9

Changes to Figure 15...................................................................... 11

Changes to the Power Dissipation Considerations Section...... 14

Changes to Figure 35 and Figure 36............................................. 15

Changes to Figure 38 and Table 9................................................. 16

Updated Outline Dimensions....................................................... 18

Changes to Ordering Guide .......................................................... 19

10/05—Revision 0: Initial Version

Rev. A | Page 2 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

SPECIFICATIONS

ADR440 ELECTRICAL CHARACTERISTICS

V_IN= 3 V to 18 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

Table 2.

Parameter

OUTPUT VOLTAGE

A Grade

Symbol

Conditions

Min

Typ

Max

Unit

V_O

2.045

2.047

2.048

2.051

2.049

V

B Grade

INITIAL ACCURACY

A Grade

V_OERR

3

0.15

1

mV

%

mV

%

B Grade

0.05

TEMPERATURE DRIFT

A Grade

B Grade

TCV_O

−40°C < T_A< +125°C

2

1

10

3

ppm/°C

ppm/V

LINE REGULATION

LOAD REGULATION

ΔV_O/ΔV_IN

−20

−50

+10

+20

ΔV_O/ΔI_LOAD

I_LOAD= 0 mA to 10 mA, V_IN= 3.5 V,

−40°C < T_A< +125°C

I_LOAD= 0 mA to −5 mA, V_IN= 3.5 V,

−40°C < T_A< +125°C

+50

ppm/mA

ΔV_O/ΔI_LOAD

+50

3.75

ppm/mA

mA

QUIESCENT CURRENT

I_IN

No load, −40°C < T_A< +125°C

0.1 Hz to 10 Hz

3

VOLTAGE NOISE

e_Np-p

e_N

1

μV p-p

nV/√Hz

μs

VOLTAGE NOISE DENSITY

TURN-ON SETTLING TIME

LONG-TERM STABILITY¹

1 kHz

45

10

50

70

−75

27

t_R

V_O

1000 hours

f_IN= 10 kHz

ppm

dB

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO

SHORT CIRCUIT TO GND

SUPPLY VOLTAGE OPERATING RANGE

SUPPLY VOLTAGE HEADROOM

V_{O_HYS}

RRR

I_SC

mA

V_IN

3

18

V

V_IN− V_O

500

mV

¹The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.

Rev. A | Page 3 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ADR441 ELECTRICAL CHARACTERISTICS

V_IN= 3 V to 18 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

Table 3.

Parameter

OUTPUT VOLTAGE

A Grade

Symbol

Conditions

Min

Typ

Max

Unit

V_O

2.497

2.499

2.500

2.503

2.501

V

B Grade

INITIAL ACCURACY

A Grade

V_OERR

3

0.12

1

mV

%

mV

%

B Grade

0.04

TEMPERATURE DRIFT

A Grade

B Grade

TCV_O

−40°C < T_A< +125°C

2

1

10

3

ppm/°C

ppm/V

LINE REGULATION

LOAD REGULATION

ΔV_O/ΔV_IN

10

20

ΔV_O/ΔI_LOAD

I_LOAD= 0 mA to 10 mA, V_IN= 4 V,

−40°C < T_A< +125°C

I_LOAD= 0 mA to −5 mA, V_IN= 4 V,

−40°C < T_A< +125°C

−50

+50

ppm/mA

ΔV_O/ΔI_LOAD

+50

3.75

ppm/mA

mA

QUIESCENT CURRENT

I_IN

No load, −40°C < T_A< +125°C

0.1 Hz to 10 Hz

3

VOLTAGE NOISE

e_Np-p

e_N

1.2

48

10

50

70

−75

27

μV p-p

nV/√Hz

μs

VOLTAGE NOISE DENSITY

TURN-ON SETTLING TIME

LONG-TERM STABILITY¹

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO

SHORT CIRCUIT TO GND

SUPPLY VOLTAGE OPERATING RANGE

SUPPLY VOLTAGE HEADROOM

1 kHz

t_R

V_O

1000 hours

f_IN= 10 kHz

ppm

dB

V_{O_HYS}

RRR

I_SC

mA

V_IN

3

18

V

V_IN− V_O

500

mV

¹The long-term stability specification is noncumulative. The drift in subsequent 1000-hour period is significantly lower than in the first 1000-hour period.

Rev. A | Page 4 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ADR443 ELECTRICAL CHARACTERISTICS

V_IN= 3.5 V to 18 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

Table 4.

Parameter

OUTPUT VOLTAGE

A Grade

Symbol

Conditions

Min

Typ

Max

Unit

V_O

2.996

2.9988

3.000

3.004

3.0012

V

B Grade

INITIAL ACCURACY

A Grade

V_OERR

4

mV

%

mV

%

0.13

1.2

0.04

B Grade

TEMPERATURE DRIFT

A Grade

B Grade

TCV_O

−40°C < T_A< +125°C

2

1

10

3

ppm/°C

ppm/V

LINE REGULATION

LOAD REGULATION

ΔV_O/ΔV_IN

10

20

ΔV_O/ΔI_LOAD

I_LOAD= 0 mA to 10 mA, V_IN= 5 V,

−40°C < T_A< +125°C

I_LOAD= 0 mA to −5 mA, V_IN= 5 V,

−40°C < T_A< +125°C

−50

+50

ppm/mA

ΔV_O/ΔI_LOAD

+50

3.75

ppm/mA

mA

QUIESCENT CURRENT

I_IN

No load, −40°C < T_A< +125°C

0.1 Hz to 10 Hz

3

VOLTAGE NOISE

e_Np-p

e_N

1.4

57.6

10

μV p-p

nV/√Hz

μs

VOLTAGE NOISE DENSITY

TURN-ON SETTLING TIME

LONG-TERM STABILITY¹

1 kHz

t_R

V_O

1000 hours

f_IN= 10 kHz

50

ppm

dB

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO

SHORT CIRCUIT TO GND

SUPPLY VOLTAGE OPERATING RANGE

SUPPLY VOLTAGE HEADROOM

V_{O_HYS}

RRR

I_SC

70

−75

27

mA

V_IN

3.5

18

V

V_IN− V_O

500

mV

¹The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.

Rev. A | Page 5 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ADR444 ELECTRICAL CHARACTERISTICS

V_IN= 4.6 V to 18 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

Table 5.

Parameter

OUTPUT VOLTAGE

A Grade

Symbol

Conditions

Min

Typ

Max

Unit

V_O

4.091

4.0944

4.096

4.101

4.0976

V

B Grade

INITIAL ACCURACY

A Grade

V_OERR

5

mV

%

mV

%

0.13

1.6

0.04

B Grade

TEMPERATURE DRIFT

A Grade

B Grade

TCV_O

−40°C < T_A< +125°C

2

1

10

3

ppm/°C

ppm/V

LINE REGULATION

LOAD REGULATION

ΔV_O/ΔV_IN

10

20

ΔV_O/ΔI_LOAD

I_LOAD= 0 mA to 10 mA, V_IN= 5.5 V,

−40°C < T_A< +125°C

I_LOAD= 0 mA to −5 mA, V_IN= 5.5 V,

−40°C < T_A< +125°C

−50

+50

ppm/mA

ΔV_O/ΔI_LOAD

+50

3.75

ppm/mA

mA

QUIESCENT CURRENT

I_IN

No load, −40°C < T_A< +125°C

0.1 Hz to 10 Hz

3

VOLTAGE NOISE

e_Np-p

e_N

1.8

78.6

10

μV p-p

nV/√Hz

μs

VOLTAGE NOISE DENSITY

TURN-ON SETTLING TIME

LONG-TERM STABILITY¹

1 kHz

t_R

V_O

1000 hours

f_IN= 10 kHz

50

ppm

dB

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO

SHORT CIRCUIT TO GND

SUPPLY VOLTAGE OPERATING RANGE

SUPPLY VOLTAGE HEADROOM

V_{O_HYS}

RRR

I_SC

70

−75

27

mA

V_IN

4.6

18

V

V_IN− V_O

500

mV

¹The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.

Rev. A | Page 6 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ADR445 ELECTRICAL CHARACTERISTICS

V_IN= 5.5 V to 18 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

Table 6.

Parameter

OUTPUT VOLTAGE

A Grade

Symbol

Conditions

Min

Typ

Max

Unit

V_O

4.994

4.998

5.000

5.006

5.002

V

B Grade

INITIAL ACCURACY

A Grade

V_OERR

6

0.12

2

mV

%

mV

%

B Grade

0.04

TEMPERATURE DRIFT

A Grade

B Grade

TCV_O

−40°C < T_A< +125°C

2

1

10

3

ppm/°C

ppm/V

LINE REGULATION

LOAD REGULATION

ΔV_O/ΔV_IN

10

20

ΔV_O/ΔI_LOAD

I_LOAD= 0 mA to 10 mA, V_IN= 6.5 V,

−40°C < T_A< +125°C

I_LOAD= 0 mA to −5 mA, V_IN= 6.5 V,

−40°C < T_A< +125°C

−50

+50

ppm/mA

ΔV_O/ΔI_LOAD

+50

3.75

ppm/mA

mA

QUIESCENT CURRENT

I_IN

No load, −40°C < T_A< +125°C

0.1 Hz to 10 Hz

3

VOLTAGE NOISE

e_Np-p

e_N

2.25

90

10

50

70

–75

27

μV p-p

nV/√Hz

μs

VOLTAGE NOISE DENSITY

TURN-ON SETTLING TIME

LONG-TERM STABILITY¹

1 kHz

t_R

V_O

1000 hours

f_IN= 10 kHz

ppm

dB

OUTPUT VOLTAGE HYSTERESIS

RIPPLE REJECTION RATIO

SHORT CIRCUIT TO GND

SUPPLY VOLTAGE OPERATING RANGE

SUPPLY VOLTAGE HEADROOM

V_{O_HYS}

RRR

I_SC

mA

V_IN

5.5

18

V

V_IN− V_O

500

mV

¹The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.

Rev. A | Page 7 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ABSOLUTE MAXIMUM RATINGS

THERMAL RESISTANCE

T_A= 25°C, unless otherwise noted.

θ_JAis specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 7.

Parameter

Rating

Table 8. Thermal Resistance

Supply Voltage

20 V

Output Short-Circuit Duration to GND

Storage Temperature Range

Operating Temperature Range

Junction Temperature Range

Lead Temperature, Soldering (60 sec)

Indefinite

Package Type

θ_JA

θ_JC

Unit

°C/W

−65°C to +125°C

−40°C to +125°C

−65°C to +150°C

300°C

8-Lead SOIC_N (R-Suffix)

8-Lead MSOP (RM-Suffix)

130

190

43

ESD CAUTION

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Rev. A | Page 8 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

TYPICAL PERFORMANCE CHARACTERISTICS

V_IN= 7 V, T_A= 25°C, C_IN= C_OUT= 0.1 μF, unless otherwise noted.

2.051

2.5020

2.5015

2.5010

2.5005

2.5000

2.050

2.049

2.048

2.047

2.046

2.045

2.4995

2.4990

–40

–20

0

20

40

60

80

100

120

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 3. ADR441 Output Voltage vs. Temperature

Figure 6. ADR440 Output Voltage vs. Temperature

5.006

3.0020

3.0015

3.0010

3.0005

3.0000

2.9995

2.9990

5.004

5.002

UNIT 1

UNIT 2

5.000

4.998

4.996

4.994

UNIT 3

2.9985

2.9980

–40

–20

0

20

40

60

80

100

120

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 4. ADR443 Output Voltage vs. Temperature

Figure 7. ADR445 Output Voltage vs. Temperature

4.0980

4.0

3.5

3.0

4.0975

4.0970

4.0965

4.0960

4.0955

4.0950

UNIT 1

+125°C

+25°C

UNIT 2

UNIT 3

–40°C

2.5

2.0

4.0945

4.0940

–40 –25 –10

5

20

35

50

65

80

95 110 125

4

6

8

10

12

14

16

18

TEMPERATURE (°C)

INPUT VOLTAGE (V)

Figure 5. ADR444 Output Voltage vs. Temperature

Figure 8. ADR441 Supply Current vs. Input Voltage

Rev. A | Page 9 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

4.0

10

8

3.5

3.0

6

4

2.5

2.0

2

0

–40 –25 –10

5

20

35

50

65

80

95 110 125

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 9. ADR441 Supply Current vs. Temperature

Figure 12. ADR441 Line Regulation vs. Temperature

60

3.5

3.4

3.3

3.2

55

50

45

V

= 18V

IN

3.1

3.0

+125°C

I

= 0mA TO 10mA

LOAD

V

= 6V

IN

2.9

2.8

+25°C

–40°C

40

2.7

35

30

2.6

2.5

–40 –25 –10

5

20

35

50

65

80

95 110 125

5.3

7.3

9.3

11.3

13.3

15.3

17.3

19.3

TEMPERATURE (°C)

INPUT VOLTAGE (V)

Figure 13. ADR441 Load Regulation vs. Temperature

Figure 10. ADR445 Supply Current vs. Input Voltage

7

3.25

6

5

4

3.15

3.05

3

2

2.95

2.85

2.75

1

0

–40 –25 –10

5

20

35

50

65

80

95 110 125

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 14. ADR445 Line Regulation vs. Temperature

Figure 11. ADR445 Quiescent Current vs. Temperature

Rev. A | Page 10 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

50

40

30

1.0

0.9

0.8

I

= 0mA TO +10mA

LOAD

+125°C

0.7

0.6

0.5

20

10

V

= 6V

IN

0

+25°C

–10

0.4

0.3

0.2

–40°C

–20

–30

–40

–50

I

= 0mA TO –5mA

LOAD

0.1

0

–40 –25 –10

5

20

35

50

65

80

95 110 125

–5

0

5

10

TEMPERATURE (°C)

LOAD CURRENT (mA)

Figure 15. ADR445 Load Regulation vs. Temperature

Figure 18. ADR445 Minimum Input/Output

Differential Voltage vs. Load Current

0.7

0.5

NO LOAD

0.6

0.5

0.4

0.3

0.2

+125°C

+25°C

–40°C

0.3

0.2

0.1

0

0.1

0

–10

–5

0

5

10

–40 –25 –10

5

20

35

50

65

80

95 110 125

LOAD CURRENT (mA)

TEMPERATURE (°C)

Figure 16. ADR441 Minimum Input/Output

Differential Voltage vs. Load Current

Figure 19. ADR445 Minimum Headroom vs. Temperature

0.5

NO LOAD

C

, C = 0.1µF

OUT

IN

0.4

0.3

0.2

V

= 5V/DIV

IN

0.1

0

V

= 1V/DIV

OUT

TIME = 10µs/DIV

–40 –25 –10

5

20

35

50

65

80

95 110 125

TEMPERATURE (°C)

Figure 17. ADR441 Minimum Headroom vs. Temperature

Figure 20. ADR441 Turn-On Response

Rev. A | Page 11 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

C

, C

= 0.1µF

C

, C = 0.1µF

IN

OUT

IN OUT

LOAD OFF

LOAD ON

V

= 5V/DIV

IN

5mV/DIV

V

= 1V/DIV

OUT

TIME = 200µs/DIV

Figure 24. ADR441 Load Transient Response

Figure 21. ADR441 Turn-Off Response

C

= 0.1µF

IN

C

= 0.1µF

IN

= 10µF

OUT

= 10µF

OUT

LOAD ON

LOAD OFF

V

= 5V/DIV

IN

5mV/DIV

V

= 1V/DIV

OUT

TIME = 200µs/DIV

Figure 22. ADR441 Turn-On Response

Figure 25. ADR441 Load Transient Response

C

= 0.1µF

IN

= 10µF

OUT

2V/DIV

4V

1µV/DIV

CH1 p-p

1.18µV

2mV/DIV

TIME = 1s/DIV

TIME = 100µs/DIV

Figure 23. ADR441 Line Transient Response

Figure 26. ADR441 0.1 Hz to 10.0 Hz Voltage Noise

Rev. A | Page 12 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

16

14

12

10

8

50µV/DIV

6

CH1 p-p

49µV

4

2

0

TIME = 1s/DIV

DEVIATION (PPM)

Figure 30. ADR441 Typical Output Voltage Hysteresis

Figure 27. ADR441 10 Hz to 10 kHz Voltage Noise

10

9

8

7

ADR445

6

5

1µV/DIV

ADR443

CH1 p-p

2.24µV

4

3

2

ADR441

1

0

10

100

1k

10k

100k

TIME = 1s/DIV

FREQUENCY (Hz)

Figure 31. Output Impedance vs. Frequency

Figure 28. ADR445 0.1 Hz to 10.0 Hz Voltage Noise

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

50µV/DIV

CH1 p-p

66µV

100

1k

10k

100k

1M

TIME = 1s/DIV

FREQUENCY (Hz)

Figure 32. Ripple Rejection Ratio vs. Frequency

Figure 29. ADR445 10 Hz to 10 kHz Voltage Noise

Rev. A | Page 13 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

THEORY OF OPERATION

POWER DISSIPATION CONSIDERATIONS

The ADR44x series of references uses a new reference generation

technique known as XFET (eXtra implanted junction FET).

This technique yields a reference with low dropout, good

thermal hysteresis, and exceptionally low noise. The core of the

XFET reference consists of two junction field-effect transistors

(JFETs), one of which has an extra channel implant to raise its

pinch-off voltage. By running the two JFETs at the same drain

current, the difference in pinch-off voltage can be amplified

and used to form a highly stable voltage reference.

The ADR44x family of references is guaranteed to deliver load

currents to 10 mA with an input voltage that ranges from 3 V to

18 V. When these devices are used in applications at higher

currents, users should use the following equation to account for

the temperature effects of increases in power dissipation:

T_J=P_D× θ_JA+ T_A

where:

(2)

T_Jand T_Aare the junction and ambient temperatures,

respectively.

P_Dis the device power dissipation.

The intrinsic reference voltage is around 0.5 V with a negative

temperature coefficient of about –120 ppm/°C. This slope is

essentially constant to the dielectric constant of silicon, and it can

be closely compensated for by adding a correction term generated

in the same fashion as the proportional-to-temperature (PTAT)

term used to compensate band gap references. The advantage

of an XFET reference is its correction term, which is approx-

imately 20 times lower and requires less correction than that of a

band gap reference. Because most of the noise of a band gap

reference comes from the temperature compensation circuitry,

the XFET results in much lower noise.

θ_JAis the device package thermal resistance.

BASIC VOLTAGE REFERENCE CONNECTIONS

The ADR44x family requires a 0.1 μF capacitor on the input

and the output for stability. While not required for operation,

a 10 μF capacitor at the input can help with line voltage

transient performance.

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

TP

1

2

3

4

8

7

6

5

TP

Figure 33 shows the basic topology of the ADR44x series. The

temperature correction term is provided by a current source

with a value designed to be proportional to absolute temperature.

The general equation is

V

IN

NC

+

V

OUT

10µF

0.1µF

NC

GND

TOP VIEW

(Not to Scale)

0.1µF

TRIM

NOTES

1. NC = NO CONNECT

2. TP = TEST PIN (DO NOT CONNECT)

(

)

V_OUT= G ΔV_P−R1× I_PTAT

(1)

where:

Figure 34. Basic Voltage Reference Configuration

G is the gain of the reciprocal of the divider ratio.

ꢀV_Pis the difference in pinch-off voltage between the two JFETs.

NOISE PERFORMANCE

The noise generated by the ADR44x family of references is

typically less than 1.4 μV p-p over the 0.1 Hz to 10.0 Hz band

for ADR440, ADR441, and ADR443. Figure 26 shows the 0.1 Hz

to 10 Hz noise of the ADR441, which is only 1.2 μV p-p. The

noise measurement is made with a band-pass filter made of a

2pole high-pass filter with a corner frequency at 0.1 Hz and a

2pole low-pass filter with a corner frequency at 10.0 Hz.

I

_PTATis the positive temperature coefficient correction current.

ADR44x devices are created by on-chip adjustment of R2

and R3 to achieve the different voltage option at the

reference output.

V

IN

I

PTAT

1

TURN-ON TIME

V

ADR44x

OUT

Upon application of power (cold start), the time required for

the output voltage to reach its final value within a specified

error band is defined as the turn-on settling time. Two compo-

nents normally associated with this are the time for the active

circuits to settle and the time for the thermal gradients on the

chip to stabilize. Figure 20 and Figure 21 show the turn-on and

turn-off settling times for the ADR441.

R2

R3

*

ΔV

P

R1

*EXTRA CHANNEL IMPLANT

= G (ΔV – R1 × I

V

)

OUT

P

PTAT

GND

Figure 33. Simplified Schematic Device

Rev. A | Page 14 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

APPLICATIONS

OUTPUT ADJUSTMENT

+V

DD

The ADR44x family features a TRIM pin that allows the user to

adjust the output voltage of the part over a limited range. This

allows errors from the reference and overall system errors to be

trimmed out by connecting a potentiometer between the output

and the ground, with the wiper connected to the TRIM pin.

Figure 35 shows the optimal trim configuration. R1 allows fine

adjustment of the output and is not always required. R_Pshould

be sufficiently large so that the maximum output current from

the ADR44x is not exceeded.

2

V

IN

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

0.1µF

V

6

+5V

–5V

OUT

R1

10kΩ

R2

0.1µF

GND

4

10kΩ

+10V

0.1µF

R3

5kΩ

2

–10V

V

IN

V

Figure 36. ADR44x Bipolar Outputs

V

O

= ±0.5%

6

OUT

0.1µF

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

NEGATIVE REFERENCE

Figure 37 shows how to connect the ADR44x and a standard

operational amplifier, such as the OP1177, to provide negative

voltage. This configuration provides two main advantages. First,

it only requires two devices; therefore, it does not require

excessive board space. Second, and more importantly, it does

not require any external resistors. This means the performance

of this circuit does not rely on choosing low temperature

coefficient resistors to ensure accuracy.

R

10kΩ

P

5

TRIM

GND

4

R1

100kΩ

R2

1kΩ

Figure 35. ADR44x Trim Function

Using the trim function has a negligible effect on the temperature

performance of the ADR44x. However, all resistors need to be

low temperature coefficient resistors, or errors can occur.

+V

DD

2

BIPOLAR OUTPUTS

V

IN

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

By connecting the output of the ADR44x to the inverting

terminal of an operational amplifier, it is possible to obtain both

positive and negative reference voltages. Care must be taken

when choosing Resistor R1 and Resistor R2 (see Figure 36).

They must be matched as closely as possible to ensure minimal

differences between the negative and positive outputs. In

addition, care must be taken to ensure performance over

temperature. Use low temperature coefficient resistors if the

circuit is used over temperature; otherwise, differences exist

between the two outputs.

6

V

OUT

GND

4

–V

REF

–V

DD

Figure 37. ADR44x Negative Reference

V_OUTis at virtual ground, and the negative reference is taken

directly from the output of the operational amplifier. If the

negative supply voltage is close to the reference output, the

operational amplifier must be dual supply and have low offset

and rail-to-rail capability.

Rev. A | Page 15 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

PROGRAMMABLE VOLTAGE SOURCE

PROGRAMMABLE CURRENT SOURCE

To obtain different voltages than those offered by the ADR44x,

some extra components are needed. In Figure 38, two

potentiometers are used to set the desired voltage, while the

buffering amplifier provides current drive. The potentiometer

connected between V_OUTand GND, with its wiper connected to

the noninverting input of the operational amplifier, takes care of

coarse trim. The second potentiometer, with its wiper

It is possible to build a programmable current source using a

setup similar to the programmable voltage source, as shown in

Figure 39. The constant voltage on the gate of the transistor sets

the current through the load. Varying the voltage on the gate

changes the current. This circuit does not require a dual digital

potentiometer.

V

CC

connected to the trim terminal of the ADR44x, is used for fine

adjustment. Resolution depends on the end-to-end resistance

value and the resolution of the selected potentiometer.

2

0.1µF

V

IN

R

SENSE

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

+V

DD

2

V

OUT

6

V

IN

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

GND

4

0.1µF

ADJ V

REF

AD5259

6

V

OUT

I

LOAD

R1

R2

GND

4

10kΩ 10kΩ

Figure 39. Programmable Current Source

HIGH VOLTAGE FLOATING CURRENT SOURCE

Figure 38. Programmable Voltage Source

Use the circuit in Figure 40 to generate a floating current source

with minimal self heating. This particular configuration can

operate on high supply voltages, determined by the breakdown

voltage of the N-channel JFET.

For a completely programmable solution, replace the two

potentiometers in Figure 38 with one Analog Devices dual

digital potentiometer, offered with either an SPI® or an I²C®

interface. These interfaces set the position of the wiper on both

potentiometers and allow the output voltage to be set. Table 9

lists compatible Analog Devices digital potentiometers.

+V

S

SST111

VISHAY

Table 9. Digital Potentiometer Parts

2

V

IN

No. of

1

Part No.

AD5251

AD5207

AD5242

AD5262

AD5282

AD5252

AD5232

AD5235

ADN2850

Channels

Positions

ITF

I²C

SPI

I²C

SPI

I²C

SPI

R (kΩ)

V_DD

5.5

15

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

2.00

64.00

1, 10, 50, 100

10, 50, 100

10, 100, 1M

20, 50, 200

20, 50, 100

1, 10, 50, 100

10, 50, 100

25, 250

256.00

1024.00

V

OUT

6

2N3904

OP90

15

GND

4

5.5

25, 250

–V

S

¹Can also use a negative supply.

Figure 40. Floating Current Source

Adding a negative supply to the operational amplifier allows

the user also to produce a negative programmable reference,

by connecting the reference output to the inverting terminal

of the operational amplifier. Choose feedback resistors to

minimize errors over temperature.

Rev. A | Page 16 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

PRECISION OUTPUT REGULATOR

(BOOSTED REFERENCE)

V

IN

2

V

IN

2N7002

ADR440/

ADR441/

ADR443/

ADR444/

ADR445

C

15V

IN

0.1µF

V

OUT

6

V

O

R

C

L

1µF

C

L

OUT

0.1µF

200Ω

GND

4

–V

Figure 41. Boosted Output Reference

Higher current drive capability can be obtained, without

sacrificing accuracy, by using the circuit in Figure 41. The

operational amplifier regulates the MOSFET turn-on, forcing

V_Oto equal the V_REF. Current is then drawn from V_IN, allowing

increased current drive capability. The circuit allows a 50 mA

load; if higher current drive is required, use a larger MOSFET.

For fast transient response, add a buffer at V_Oto aid with

capacitive loading.

Rev. A | Page 17 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

OUTLINE DIMENSIONS

5.00 (0.1968)

4.80 (0.1890)

8

1

5

4

6.20 (0.2440)

5.80 (0.2284)

4.00 (0.1574)

3.80 (0.1497)

1.27 (0.0500)

BSC

0.50 (0.0196)

0.25 (0.0099)

× 45°

1.75 (0.0688)

1.35 (0.0532)

0.25 (0.0098)

0.10 (0.0040)

8°

0.51 (0.0201)

0.31 (0.0122)

0° 1.27 (0.0500)

COPLANARITY

0.10

0.25 (0.0098)

0.17 (0.0067)

SEATING

PLANE

0.40 (0.0157)

COMPLIANT TO JEDEC STANDARDS MS-012-AA

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

Figure 42. 8-Lead Standard Small Outline Package [SOIC_N]

Narrow Body

(R-8)

Dimensions shown in millimeters and (inches)

3.00

BSC

8

1

5

4

4.90

BSC

3.00

BSC

PIN 1

0.65 BSC

1.10 MAX

0.15

0.00

0.80

0.60

0.40

8°

0°

0.38

0.22

0.23

0.08

COPLANARITY

0.10

SEATING

PLANE

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 43. 8-Lead Mini Small Outline Package [MSOP]

(RM-8)

Dimensions show in millimeters

Rev. A | Page 18 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

ORDERING GUIDE

Initial

Temperature

Coefficient

Package (ppm/°C) Description

Accuracy,

(mV) (%)

Output

Voltage (V)

Package

Temperature

Branding Range

Package

Option

Model

ADR440ARZ¹

ADR440ARZ-REEL7¹

ADR440ARMZ¹

ADR440ARMZ-REEL7¹

ADR440BRZ¹

ADR440BRZ-REEL7¹

ADR441ARZ¹

ADR441ARZ-REEL7¹

ADR441ARMZ¹

ADR441ARMZ-REEL7¹

ADR441BRZ¹

ADR441BRZ-REEL7¹

ADR443ARZ¹

ADR443ARZ-REEL7¹

ADR443ARMZ¹

ADR443ARMZ-REEL7¹

ADR443BRZ¹

ADR443BRZ-REEL7¹

ADR444ARZ¹

ADR444ARZ-REEL7¹

ADR444ARMZ¹

ADR444ARMZ-REEL7¹

ADR444BRZ¹

ADR444BRZ-REEL7¹

ADR445ARZ¹

ADR445ARZ-REEL7¹

ADR445ARMZ¹

2.048

2.500

3.000

4.096

5.000

3

0.15 10

8-Lead SOIC_N

–40°C to +125°C R-8

–40°C to +125°C RM-8

–40°C to +125°C R-8

–40°C to +125°C RM-8

–40°C to +125°C R-8

–40°C to +125°C RM-8

–40°C to +125°C R-8

–40°C to +125°C RM-8

–40°C to +125°C R-8

–40°C to +125°C RM-8

–40°C to +125°C R-8

8-Lead SOIC_N

8-Lead MSOP

8-Lead SOIC_N

8-Lead MSOP

8-Lead SOIC_N

8-Lead MSOP

8-Lead SOIC_N

8-Lead MSOP

8-Lead SOIC_N

8-Lead MSOP

8-Lead SOIC_N

R01

1

0.05

3

0.12 10

R02

1

0.04

3

4

0.13 10

R03

1.2

5

0.04

3

0.13 10

5

R04

1.6

6

0.04

3

0.12 10

6

R05

ADR445ARMZ-REEL7¹

ADR445BRZ¹

ADR445BRZ-REEL7¹

2

0.04

3

¹Z = Pb-free part.

Rev. A | Page 19 of 20

ADR440/ADR441/ADR443/ADR444/ADR445

NOTES

Purchase of licensed I²C components of Analog Devices or one of its sublicensed Associated Companies conveys a license for the purchaser under the Philips I²C Patent

Rights to use these components in an I²C system, provided that the system conforms to the I²C Standard Specification as defined by Philips.

registered trademarks are the property of their respective owners.

D05428-0-9/06(A)

Rev. A | Page 20 of 20

型号:	ADR441ARZ
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.76
Is Samacsys：	N
其他特性：	OUTPUT VOLTAGE CAN BE ADJUSTED OVER A 0.5 PERCENT RANGE USING TRIM PIN
模拟集成电路 - 其他类型：	THREE TERMINAL VOLTAGE REFERENCE
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
长度：	4.9 mm
湿度敏感等级：	1
功能数量：	1
输出次数：	1
端子数量：	8
最高工作温度：	125 °C
最低工作温度：	-40 °C
最大输出电压：	2.503 V
最小输出电压：	2.497 V
标称输出电压：	2.5 V
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
座面最大高度：	1.75 mm
最大供电电压 (Vsup)：	18 V
最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	4 V
表面贴装：	YES
最大电压温度系数：	10 ppm/ °C
温度等级：	AUTOMOTIVE
端子面层：	MATTE TIN
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
微调/可调输出：	YES
宽度：	3.9 mm
Base Number Matches：	1

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