AH22-S8G各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

AH225

1W High Linearity InGaP HBT Amplifier

Applications

ꢀ

Repeaters

Base Station Transceivers

High Power Amplifiers

Mobile Infrastructure

LTE / WCDMA / CDMA / WiMAX

SOIC-8 Package

Product Features

Functional Block Diagram

ꢀ

400-2700 MHz

15.5 dB Gain at 2140 MHz

+31 dBm P1dB

+46 dBm Output IP3

300 mA Quiescent Current

+5 V Single Supply

MTTF > 100 Years

Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,

31.5 dBm CW Pout or 23 dBm WCDMA Pout

ꢀ

Lead-free/RoHS-compliant SOIC-8 Package

General Description

Pin Configuration

The AH225 is a high dynamic range driver amplifier in a

low-cost surface-mount package. The InGaP/GaAs HBT

is able to achieve high performance for various

narrowband-tuned application circuits with up to +46

dBm OIP3 and +31.2 dBm of compressed 1dB power.

The integrated active bias circuitry in the devices enables

excellent stable linearity performance over temperature. It

is housed in a lead-free/RoHS-compliant SOIC-8 package.

All devices are 100% RF and DC tested.

Pin #

1

Symbol

Vbias

2, 4, 5

N/C

3

RF_in

6, 7

RF_Out

Iref

8

Backside Paddle

RF/DC GND

The AH225 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. The AH225 is ideal for the final stage

of small repeaters or as driver stages for high power

amplifiers. In addition, the amplifier can be used for a

wide variety of other applications within the 400 to 2700

MHz frequency band.

Not Recommended for

New Designs

Recommended Replacement

Part: TQP7M9103

Ordering Information

Part No.

AH225-S8G

Description

1W High Linearity Amplifier

Standard T/R size = 1000 pieces on a 7” reel.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 1 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Specifications

Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Rating

-65 to 150 ^°C

+26 dBm

+8 V

Parameter

V_cc

Min Typ Max Units

Storage Temperature

RF Input Power, CW, 50ꢀ, T=25^°C

Device Voltage,V_cc, V_bias

Device Current

+4.5

-40

+5

+5.25

+85

+200

V

^°C

T_case

T_J(for >10⁶hours MTTF)

900 mA

+5 W

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Device Power

Operation of this device outside the parameter ranges given

above may cause permanent damage.

Electrical Specifications

Test conditions unless otherwise noted: V_cc= +5 V, I_cq= 300 mA, T = +25^°C, in a tuned application circuit.

Parameter

Operational Frequency Range

Conditions

Min

400

Typical

Max

2700

Units

MHz

dB

Test Frequency

Gain

2140

15.5

18

13.3

Input Return Loss

Output Return Loss

Output P1dB

dB

9.4

+30

+43

+31.2

+46

+21.3

6

dBm

dB

Output IP3

See Note 1

See Note 2

WCDMA Channel Power at -50 dBc ACLR

Noise Figure

V_cc, V_bias

+5

V

Quiescent Current, I_cq

Iref

See Note 3

300

15

350

35

mA

^°C/W

Thermal Resistance (jnc. to case) θ_jc

Notes:

1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product

is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.

2. 3GPP WCDMA, 1 64DPCH, 5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.

3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.

Performance Summary Table

Test conditions unless otherwise noted: V_cc= +5 V, I_cq= 300 mA, T = +25^°C, in an application circuit tuned for each frequency.

Frequency

Gain

750 940 1500 1840 1960 2140 2600 MHz

20.1

14.5

7

19.8

10.5

8.4

17

17.2

11

15.1

11

15.4

15.2

18

13.2

19.4

5.5

dB

Input Return Loss

Output Return Loss

Output P1dB

10.7

+30.7

+46

8.3

9.4

+30.4

+45

+21.2 +21.7

+31

+31.3

+48

+22

+31.3

+53.6

+21.7

+31

+47

+21.4

+30.5 dBm

+48.7 dBm

+21.3 dBm

Output IP3 [See note 4]

WCDMA Channel Power at -50 dBc ACLR

+47.3

+21.6

Notes:

4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490,

1840, 1960, 2140, 2600 MHz application circuits respectively.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 2 of 21 -

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AH225

1W High Linearity InGaP HBT Amplifier

Device Characterization Data

Gain and Max Stable Gain

De-embedded S-Parameters

45

Input Smith Chart

Output Smith Chart

1

4GHz

0.8

40

0.8

0.6

0.4

Gain (dB)

MSG (dB)

35

30

25

20

15

10

5

0.6

0.4

0.2

0

4GHz

0.2

0

-1

-0.75 -0.5 -0.25

0

0.25

0.75

⁰0^.5.05 GHz¹

-0.2

-0.4

-0.6

-0.8

-1

-0.75 -0.5 -0.25

0.05 GHz

0

0.25

0.5

0.75

-0.2

-0.4

-0.6

-0.8

0

0.5

1

1.5

2

2.5

3

Frequency (MHz)

Note: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, Gain (dB). For a tuned circuit for a particular

frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line,

DB [MSG]. The impedance loss plots are shown from 0.05-4 GHz.

S-Parameter Data

V_cc= +5 V, I_cq= 300 mA, T = +25^°C, unmatched 50 ohm system, calibrated to device leads

Freq (MHz) S11 (dB) S11 (ang)

S21 (dB) S21 (ang) S12 (dB) S12 (ang)

S22 (dB) S22 (ang)

50

-2.90

-1.57

-0.99

-0.81

-0.97

-1.12

-1.25

-1.53

-2.52

-4.69

-3.69

-6.45

-13.76

-10.27

-4.15

-1.93

-165.27

-171.34

179.84

169.25

152.64

145.10

136.77

128.95

110.16

91.38

32.12

28.59

23.57

17.96

12.56

11.02

10.01

9.29

136.60

116.71

100.17

86.66

69.77

62.27

54.20

46.48

27.07

5.44

-40.91

-38.86

-37.78

-37.58

-36.47

-36.53

-35.91

-35.54

-34.79

-33.84

-34.06

-33.35

-33.51

-34.02

-35.29

-34.70

46.68

-0.94

-1.66

-1.95

-2.15

-2.08

-2.19

-2.20

-2.19

-2.20

-1.92

-2.01

-1.80

-1.25

-0.81

-0.78

-0.99

-74.85

-113.38

-143.44

-162.82

-173.99

-175.67

-177.71

-178.63

-179.60

-179.47

179.89

179.99

179.43

175.18

171.95

167.43

100

31.54

200

17.25

400

7.00

800

-0.03

1000

1200

1400

1800

2100

2000

2200

2400

2600

2800

3000

-6.84

-8.53

-14.78

-32.76

-58.32

-50.56

-72.56

-107.65

-157.07

156.89

116.80

8.93

9.54

98.77

9.27

13.27

-4.317

-28.04

-57.83

-84.16

-104.79

86.18

9.79

87.27

10.01

8.85

171.20

159.31

143.93

6.56

3.19

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 3 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Reference Design 700-850 MHz

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R7 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin pad (3^°at 750 MHz).

7. C5 is placed against the edge of C6.

8. The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5^°at 750 MHz).

9. C8 is placed against the edge of R5, L2 against C8 and C9 against L2.

10. Zero ohm jumpers may be replaced with copper traces in the target application layout.

11. DNP means Do Not Place.

12. Inductor L3 on Vpd line is critical for linearity performance.

13. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

14. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

15. All components are of 0603 size unless stated otherwise.

Typical Performance 700-850 MHz

Frequency

Gain

MHz

dB

700

20

750

20.1

14.5

7

800

20.2

16

850

20

Input Return Loss

Output Return Loss

Output P1dB

12

6

13.3

11.5

+30.6

+44

dB

8.6

dBm

V

+30.4

+44.1

+20.6

+22.8

+30.4

+45

+30.7

+44.6

+21.4

+23.3

Output IP3 at 20 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

OFDMA Channel Power at 2.5% EVM [2]

Supply Voltage, Vcc

+21.2

+23.6

+21

+23.2

+5

300

Quiescent Collector Current, Icq

mA

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 4 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 700-850 MHz

P1dB vs. Frequency

Return Loss vs. Frequency

S21 vs. Frequency

32

31

30

29

28

27

22

21

20

19

18

17

0

-5

T=+25°C

S22

-10

-15

-20

-25

S11

600

650

700

750

800

850

900

700

730

760

790

820

850

600

650

700

750

800

850

900

Frequency (MHz)

ACLR vs. Pout vs. Freq

3GPP WCDMA,TM1+64DPCH,+5 MHz Offset

EVM vs. Pout vs. Freq

OIP3 vs. Pout / tone vs. Freq

OFDM,QAM-64,54 Mb/s

1 MHz tone spacing

3

2.5

2

-35

-40

-45

-50

-55

-60

55

50

45

40

35

T=+25°C

700 MHz

750 MHz

800 MHz

850 MHz

700 MHz

750 MHz

800 MHz

850 MHz

1.5

1

700 MHz

750 MHz

800 MHz

850 MHz

0.5

0

17

19

21

23

25

19

20

21

22

23

24

25

19

20

21

22

23

24

Pout (dBm)

Pout / tone (dBm)

Pout (dBm)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 5 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Application Circuit 920-960 MHz (AH225-S8PCB900)

J3

Vcc=+5V

J5 GND

C7

10 uF 6032

C17

J4 Vref

R7

0

C17

C1

D3

C12

R8

Vpd

J4

0.1 uF 0805

C1

J3

R6

DNP

0

D3

SM05T1G

C15

C12

1000 pF

L1

C3

FB1

1000 pF

R3

51

R1

120

C15

R2

C10

U1

C3

C9

C11

47 pF

L4

0

L3

22 nH

L1

33 nH

1008

U1

AH225

R2

51

1

8

7

6

5

J5

C3

2

3

4

C6

C9

J2

C11

0

J1

RF

Output

0

C10

10 pF

RF

Input

C2

3.9 pF

L2

3.3 nH

Backside

Paddle

5.6 pF

22 pF

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of L2 is placed at 170 mils from the edge of AH225 RFin pin pad (8.5^°at 940 MHz).

7. The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin pad (4^°at 940 MHz).

8. The edge of C2 is placed at 220 mils from the edge of AH225 RFout pin pad (11^°at 940 MHz).

9. Zero ohm jumpers may be replaced with copper traces in the target application layout. C2 location will need to be re-optimized if

replaced with copper trace.

10. DNP means Do Not Place.

11. Inductor L3 on Vpd line is critical for linearity performance.

12. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

13. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

14. All components are of 0603 size unless stated otherwise.

Typical Performance 920-960 MHz

Frequency

Gain

MHz

dB

920

19.7

9.6

940

19.8

10.5

8.4

960

19.9

10.4

9

Input Return Loss

Output Return Loss

Output P1dB

dB

8

dBm

dB

+31.1

+46.2

+21.6

9.3

+31

+47.3

+21.7

9.2

+31.1

+48

+21.6

9.3

Output IP3 at 22 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

Noise Figure

Supply Voltage, Vcc

Quiescent Collector Current, Icq

V

mA

+5

300

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 6 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 920-960 MHz

S11 vs. Frequency

S21 vs. Frequency

S22 vs. Frequency

0

-5

0

-5

22

21

20

19

18

17

-40°C

+25°C

+85°C

-40°C

+25°C

+85°C

-40°C

+25°C

+85°C

-10

-15

-20

-10

-15

-20

920

930

940

950

960

920

930

940

950

960

920

930

940

950

960

Frequency (MHz)

Icc vs. Pout

Gain vs. Pout vs. Temp

P1dB vs. Frequency

3GPP WCDMA,TM1 64DPCH, 5 MHz Offset,940 MHz

Frequency = 940 MHz

600

550

500

450

400

350

300

33

32

31

30

29

28

22

21

20

19

18

17

T=+25°C

-40°C

+25°C

+85°C

25

26

27

28

29

30

31

32

930

940

950

22

24

26

28

30

32

Pout (dBm)

Frequency (MHz)

Pout (dBm)

ACLR vs. Pout vs. Temp

3GPP WCDMA,TM1+64DPCH, 5 MHz Offset, 940 MHz

ACLR vs. Pout vs. Freq

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset

Noise Figure vs. Frequency vs. Temp

12

10

8

-35

-40

-45

-50

-55

-35

-40

-45

-50

-55

T=+25°C

-40°C

+25°C

+85°C

920 MHz

940 MHz

960 MHz

-40°C

+25°C

+85°C

6

4

2

930

940

950

20

21

22

23

24

25

26

20

21

22

23

24

25

26

Frequency (MHz)

Output Channel Power (dBm)

OIP3 vs. Pout/Tone vs. Temp

OIP3 vs. Pout/Tone vs. Freq

OIP3 vs. Frequency

1 MHz spacing, 22 dBm / Tone Pout

1 MHz spacing, 940 MHz

1 MHz spacing

55

50

45

40

35

30

55

50

45

40

35

30

55

50

45

40

35

30

T=+25°C

920 MHz

-40°C

+25°C

+85°C

T=+25°C

940 MHz

960 MHz

17

19

21

23

25

17

19

21

23

25

920

930

940

950

960

Pout / tone (dBm)

Frequency (MHz)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 7 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Reference Design 1475-1510 MHz

J3

Vcc=+5V

J5 GND

C7

10 uF 6032

C17

J4 Vref

R7

0

C17

D3

R8

C12

Vpd

R6

0

DNP

J4

0.1 uF 0805

J3

D3

C12

SM05T1G

C15

L1

FB1

1000 pF

R3

51

R1

120

C15

R2

C10

U1

C6

C3

C9

C11

10 pF

L4

0

L3

22 nH

L1

18 nH

1008

U1

AH225

R2

51

1

8

7

6

5

C6

J5

2

3

4

C3

C9

J2

C11

0

J1

RF

Output

0

C10

10 pF

RF

Input

C2

1.8 pF

L2

2.2 nH

Backside

Paddle

3.3 pF

22 pF

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of L2 is placed against the edge of C9.

7. The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin pad (6^°at 1490 MHz).

8. The edge of C2 is placed at 300 mils from the edge of AH225 RFout pin pad (24^°at 1490 MHz).

9. Zero ohm jumpers may be replaced with copper traces in the target application layout.

10. DNP means Do Not Place.

11. Inductor L3 on Vpd line is critical for linearity performance.

12. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

13. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

14. All components are of 0603 size unless stated otherwise.

Typical Performance 1475-1510 MHz

Frequency

Gain

MHz

dB

1475

17

1490

17

1510

17

Input Return Loss

Output Return Loss

Output P1dB

17.5

10

17.2

11

15.2

13

dB

dBm

V

+31.4

+47.6

+22

+31.3

+48

+22

+23.9

+5

+31

Output IP3 at 19 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

OFDMA Channel Power at 2.5% EVM [2]

Supply Voltage, Vcc

+47

+21.8

+23.7

+23.9

Quiescent Collector Current, Icq

mA

300

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 8 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 1475-1510 MHz

S21 vs. Frequency

Return Loss vs. Frequency

P1dB vs. Frequency

18

17

16

15

14

13

0

-5

33

32

31

30

29

28

T=+25°C

-10

-15

-20

-25

S11

S22

1400

1450

1500

1550

1600

1475

1485

1495

1505

1515

1400

1450

1500

1550

1600

Frequency (MHz)

EVM vs. Pout vs. Freq

OFDM, QAM-64, 54 Mb/s, +25 ⁰C

ACLR vs. Pout vs. Freq

3GPP WCDMA,TM1+64DPCH,+5 MHz Offset

OIP3 vs. Pout / tone vs. Freq

1 MHz Spacing

-30

-35

-40

-45

-50

-55

-60

3

2.5

2

55

50

45

40

35

30

T=+25°C

1475 MHz

1490 MHz

1510 MHz

T=+25°C

1475 MHz

1490 MHz

1510 MHz

1475 MHz

1490 MHz

1510 MHz

1.5

1

0.5

0

19

20

21

22

23

24

25

19

20

21

22

23

24

17

19

21

23

25

Pout (dBm)

Pout / tone (dBm)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 9 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Reference Design 1805-1880 MHz

C7

C17

D3

C12

C1

J4

J3

C15

L1

R2

C10

U1

C6

C3

C11

L5 C9

J5

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of C9 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5^°at 1840 MHz).

7. The edge of L2 is placed against the edge of L5.

8. The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (8^°at 1840 MHz).

9. The edge of C5 is placed against the edge of C6.

10. Zero ohm jumpers may be replaced with copper traces in the target application layout.

11. DNP means Do Not Place.

12. Inductor L3 on Vpd line is critical for linearity performance.

13. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

14. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

15. All components are of 0603 size unless stated otherwise.

Typical Performance 1805-1880 MHz

Frequency

Gain

MHz

dB

1805

15.1

12

1840

15.1

11

1880

15.1

10

Input Return Loss

Output Return Loss

Output P1dB

dB

9.5

10.7

+30.7

+46

12

+30.6

+45

dBm

dB

+30.8

+46.2

+21.7

+23.6

5.7

Output IP3 at 19 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

OFDMA Channel Power at 2.5% EVM [2]

Noise Figure

+21.6

+23.5

5.7

+21.4

+23.3

5.8

Supply Voltage, Vcc

Quiescent Collector Current, Icq

V

mA

+5

300

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 10 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 1805-1880 MHz

Return Loss vs. Frequency

P1dB vs. Frequency

S21 vs. Frequency

17

16

15

14

13

12

0

-5

32

31

30

29

28

27

T=+25°C

S22

S11

-10

-15

-20

-25

1700

1750

1800

1850

1900

1950

2000

1800

1820

1840

1860

1880

1700

1750

1800

1850

1900

1950

2000

Frequency (MHz)

ACLR vs. Pout vs. Freq

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset

EVM vs. Pout vs. Freq

OFDM, QAM-64, 54 Mb/s

OIP3 vs. Pout / tone vs. Freq

1 MHz Spacing

3

2.5

2

60

55

50

45

40

35

30

-30

-35

-40

-45

-50

-55

-60

T=+25°C

1880 MHz

1840 MHz

1805 MHz

1880 MHz

1840 MHz

1805 MHz

1880 MHz

1840 MHz

1805 MHz

1.5

1

0.5

0

19

20

21

22

23

24

25

19

20

21

22

23

24

17

19

21

23

25

Pout / tone (dBm)

Pout (dBm)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 11 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Application Circuit 1930-1990 MHz (AH225-S8PCB1960)

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of L2 is placed at 135 mils from the edge of AH225 RFin pin pad (14.7^°1960 MHz).

7. The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin pad (8.4^°1960 MHz).

8. The edge of C2 is placed at 320 mils from the edge of AH225 RFout pin pad (33^°at 1960 MHz).

9. The edge of C6 is placed at 85 mils from the edge of AH225 RFout pin pad (8.4^°at 1960 MHz).

10. Zero ohm jumpers may be replaced with copper traces in the target application layout.

11. DNP means Do Not Place.

12. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

13. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

14. All components are of 0603 size unless stated otherwise.

Typical Performance 1930-1990 MHz

Frequency

Gain

MHz

dB

1930

15.2

16

1960

15.4

8.3

1990

15.6

14.5

9.6

Input Return Loss

Output Return Loss

Output P1dB

dB

7

dBm

dB

+31.2

+51.3

+21.8

5.9

+31.3

+53.6

+21.7

5.9

+31.1

+47.5

+21.7

6

Output IP3 at 19 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

Noise Figure

Supply Voltage, Vcc

Quiescent Collector Current, Icq

V

mA

+5

300

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 12 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 1930-1990 MHz

S11 vs. Frequency

S22 vs. Frequency

S21 vs. Frequency

17

16

15

14

13

12

0

-5

0

-5

-40°C

+25°C

+85°C

-10

-15

-20

-25

-10

-15

-20

-25

-40°C

+25°C

+85°C

-40°C

+25°C

+85°C

1930

1940

1950

1960

1970

1980

1990

1930

1940

1950

1960

1970

1980

1990

1930

1940

1950

1960

1970

1980

1990

Frequency (MHz)

ACLR vs. Pout vs. Freq

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset

OIP3 vs. Pout / Tone vs. Freq

OIP3 vs. Pout/Tone vs. Bias Voltage

1 MHz spacing

1960 MHz, 1MHz spacing

-30

-35

-40

-45

-50

-55

-60

55

50

45

40

35

30

60

55

50

45

40

35

T=+25°C

1930 MHz

1960 MHz

1990 MHz

4.75 V

5 V

1930 MHz

1960 MHz

1990 MHz

5.25 V

17

19

21

Output Power/Tone (dBm)

23

25

19

20

21

22

23

24

25

17

19

21

23

25

Pout / Tone (dBm)

Output Channel Power (dBm)

Total device current vs. Pout vs. Bias Voltage

ACLR vs. Pout vs Bias Voltage

3GPPWCDMA,TM1+64DPCH, 5 MHz Offset,1960 MHz

P1dB vs. Freq vs. Bias Voltage

Total device current include Icc, Iref, Ibias, 1960 MHz

33

32

31

30

29

28

450

400

350

300

250

200

-30

-35

-40

-45

-50

-55

-60

T=+25°C

4.75 V

5 V

4.75 V

5 V

5.25 V

1930

1940

1950

1960

1970

1980

1990

19

20

21

22

23

24

25

19

20

21

22

23

24

25

Frequency (MHz)

Pout (dBm)

OIP3 vs. P1dB vs. Frequency

Noise Figure vs. Frequency

Noise Figure vs. Bias Voltage

1 MHz spacing, 19 dBm / tone Pout

10

8

60

55

50

45

40

35

T=+25°C

F=1960 MHz

T=+25°C

8

6

4

2

0

6

-40°C

+25°C

+85°C

4

2

0

1930

1940

1950

1960

1970

1980

1990

1930

1940

1950

1960

1970

1980

1990

4.75

4.85

4.95

5.05

5.15

5.25

Voltage (V)

Frequency (MHz)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 13 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Reduced Bias Configurations Application Note

The AH225 can be configured to be operated with lower bias current by varying the Vpd resistor-R1 as highlighted on the

schematic below. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will

slightly lower the ACLR performance of the device as shown below. It is expected that variation of the bias current for other

frequency applications will produce similar performance results. The data below represents data taken from the AH225-

S8PCB1960 with data taken at 1960 MHz.

R1 (ꢀ) Icq (mA) Gain (dB) Pdiss (W) P1dB (dBm) OIP3 (dBm)¹Pout (dBm)²

56.2

82

500

400

300

200

100

15.6

15.4

15.2

14.8

14

2.5

2

+30.9

+31.1

+31.4

+48.7

+48.5

+43.5

+37.7

+21.4

+21.6

+21.4

+19.9

+15

120

200

403

1.5

1

0.5

Notes:

1. OIP3 is measured with two tones at output power of 19 dBm / tone separated by 1 MHz spacing.

2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Pout (Channel power) at -50 dBc

ACLR is shown in the table above.

OIP3 vs. Pout / Tone vs. Bias Current

ACLR vs. Pout vs. Bias Current

3GPPWCDMA,TM1+64DPCH,±5 MHz Offset,1960 MHz

P1dB vs. Current

1960 MHz, 1 MHz spacing

-30

-35

-40

-45

-50

-55

-60

55

50

45

40

35

30

33

32

31

30

29

28

T=+25°C

100mA

200mA

300mA

400mA

500mA

100mA

200mA

300mA

400mA

500mA

17

19

21

23

25

19

20

21

22

23

24

25

100

200

300

400

500

Pout (dBm)

Pout / Tone (dBm)

Current (mA)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 14 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Application Circuit 2110-2170 MHz (AH225-S8PCB2140)

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of L2 is placed at 205 mils from the edge of Ah225 RFin pin pad (23^°at 2140 MHz).

7. The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin pad (9^°at 2140 MHz).

8. The edge of C2 is placed at 205 mils from the edge of AH225 RFout pin pad (23^°at 2140 MHz).

9. The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (9^°at 2140 MHz).

10. Zero ohm jumpers may be replaced with copper traces in the target application layout.

11. DNP means Do Not Place.

12. Inductor L3 on Vpd line is critical for linearity performance.

13. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

14. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

15. All components are of 0603 size unless stated otherwise.

Typical Performance 2110-2170 MHz

Frequency

Gain

MHz

dB

2110

15.2

20

2140

15.5

18

2170

15.6

17

Input Return Loss

Output Return Loss

Output P1dB

dB

7.7

9.4

12

dBm

dB

+31.5

+45.6

+20.9

6

+31.2

+46

+21.3

6

+31.1

+46.1

+21

Output IP3 at 19 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

Noise Figure

5.9

Supply Voltage, Vcc

Quiescent Collector Current, Icq

V

mA

+5

300

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 15 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 2110-2170 MHz

S22 vs. Frequency

S11 vs. Frequency

S21 vs. Frequency

0

-5

0

-5

17

16

15

14

13

12

-40°C

+25°C

+85°C

-40°C

+25°C

+85°C

-10

-15

-20

-25

-30

-10

-15

-20

-25

-40°C

+25°C

+85°C

2110

2120

2130

2140

2150

2160

2170

2110

2120

2130

2140

2150

2160

2170

2110

2120

2130

2140

2150

2160

2170

Frequency (MHz)

Icc vs. Pout

3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, 2140 MHz

T=+25°C

P1dB vs. Frequency

Gain vs. Pout vs. Temp

18

17

16

15

14

13

33

32

31

30

29

28

550

500

450

400

350

300

T=+25°C

Freq=2140 Mhz

-40°C

+25°C

+85°C

22

24

26

28

30

25

26

27

28

29

30

31

32

2110

2120

2130

2140

2150

2160

2170

Pout (dBm)

Frequency (MHz)

ACLR vs. Pout vs. Temp

ACLR vs. Pout vs. Freq

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset

Noise Figure vs. Frequency vs. Temp

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset, 2140 MHz

-35

-40

-45

-50

-55

-60

10

8

-35

-40

-45

-50

-55

-60

-40°C

+25°C

+85°C

6

-40°C

+25°C

+85°C

2110 MHz

2140 MHz

2170 MHz

4

2

0

2110

2120

2130

2140

2150

2160

19

20

21

22

23

24

25

19

20

21

22

23

24

25

Output Channel Power (dBm)

Frequency (MHz)

Channel Output Power (dBm)

OIP3 vs. Pout/Tone vs. Freq

OIP3 vs. Frequency

1 MHz spacing, 19 dBm / Tone Pout

OIP3 vs. Pout/Tone vs. Temp

1 MHz spacing

1 MHz spacing, 2140 MHz

55

50

45

40

35

30

55

50

45

40

35

30

55

50

45

40

35

30

-40°C

+25°C

+85°C

T=+25°C

2110 MHz

2140 MHz

2170 MHz

2110

2120

2130

2140

2150

2160

17

19

21

23

25

17

19

21

23

25

Frequency (MHz)

Pout / Tone (dBm)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 16 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Reference Design 2500-2700 MHz

Notes:

1. See PC Board Layout, page 20 for more information.

2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.

3. The primary RF microstrip characteristic line impedance is 50 ꢀ.

4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.

5. Components shown on the silkscreen but not on the schematic are not used.

6. The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (10.5^°at 2600 MHz).

7. The edge of C5 is placed at 10 mils from the edge of AH225 RFout pin pad (1.5^°at 2600 MHz).

8. The edge of R5 is placed at 5 mils from the edge of AH225 RFin pin pad (1^°at 2600 MHz).

9. The edge of C9 is placed at 10 mils from the edge of R5 (1.5^°at 2600 MHz).

10. L2 is placed against the edge of C9.

11. Zero ohm jumpers may be replaced with copper traces in the target application layout.

12. DNP means Do Not Place.

13. The multilayer inductor L3 on Vpd line is critical for linearity performance.

14. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.

15. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.

16. All components are of 0603 size unless stated otherwise.

Typical Performance 2500-2700 MHz

Frequency

Gain

MHz

dB

2500

12.9

13.3

5.2

2600

13.2

19.4

5.5

2700

12.8

15.8

Input Return Loss

Output Return Loss

Output P1dB

dB

6.4

dBm

V

+30.4

+50

+30.5

+48.7

+21.3

+23

+30.2

+44.8

+20.9

+22.7

Output IP3 at 19 dBm/tone, ∆f = 1 MHz

WCDMA Channel Power at -50 dBc ACLR [1]

OFDMA Channel Power at 2.5% EVM [2]

Supply Voltage, Vcc

+21.3

+23

+5

300

Quiescent Collector Current, Icq

mA

Notes:

1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 17 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Typical Performance Plots 2500-2700 MHz

S21 vs. Frequency

Return Loss vs. Frequency

P1dB vs. Frequency

15

14

13

12

11

10

0

-5

32

31

30

29

28

27

T=+25°C

S22

-10

-15

-20

-25

S11

2500

2550

2600

2650

2700

2400

2500

2600

2700

2400

2500

2600

2700

Frequency (MHz)

ACLR vs. Pout vs. Freq

3GPP WCDMA, TM1+64DPCH, 5 MHz Offset

EVM vs. Pout vs. Freq

OFDM, QAM-64, 54 Mb/s

OIP3 vs. Pout / Tone vs. Freq

1 MHz Spacing

-30

-35

-40

-45

-50

-55

-60

3

2.5

2

55

50

45

40

35

30

2500 MHz

2600 MHz

2700 MHz

T=+25°C

2500 MHz

2600 MHz

2700 MHz

2500 MHz

2600 MHz

2700 MHz

1.5

1

0.5

0

19

20

21

22

23

24

25

19

20

21

22

23

24

17

19

21

23

25

Pout / tone (dBm)

Pout (dBm)

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network^®

- 18 of 21 -

AH225

1W High Linearity InGaP HBT Amplifier

Pin Description

Pin 1 Reference Mark

Vbias

N/C

1

2

3

4

8

7

6

5

Iref

RF_Out

N/C

RF_In

N/C

Backside Paddle - RF/DC GND

1

Symbol

Vbias

Description

Voltage supply for active bias. Connect to same supply voltage as Vcc.

No internal connection. This pin can be grounded or N/C on PCB.

RF Input. Requires matching for operation.

2, 4, 5

N/C

3

6

7

RF_in

RF_out

RF Output and DC supply voltage.

See pin 6.

Reference current into internal active bias current mirror. Current into Iref sets device

quiescent current. Also, can be used as on/off control.

Use recommended via pattern shown on page 20 and ensure good solder attach for

optimum thermal and electrical performance.

8

Iref

Backside

Paddle

RF/DC GND

Application Board Information

PC Board Layout

Top RF layer is .014” Getek, є_r= 4.0, 4 total layers

(0.062” thick) for mechanical rigidity. Metal layers are 1-

oz copper. Microstrip line details: width = .030”, spacing

= .026”.

The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’,

etc. are used as placemarkers for the input and output

tuning shunt capacitors – C8, C5 and C2. The markers

and vias are spaced in .050” increments.

The pad pattern shown has been developed and tested for

optimized assembly at TriQuint Semiconductor. The PCB

land pattern has been developed to accommodate lead and

package tolerances. Since surface mount processes vary

from company to company, careful process development

is recommended.

For

www.TriQuint.com

further

technical

information,

Refer

to

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 19 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Mechanical Information

Package Information and Dimensions

This package is lead-free/RoHS-compliant. The plating

material on the leads is NiPdAu. It is compatible with

°

both lead-free (maximum 260 C reflow temperature)

and lead (maximum 245 ^°C reflow temperature)

soldering processes.

The AH225 will be marked with an “AH225G”

designator with a lot code marked below the part

designator. The “Y” represents the last digit of the year

the part was manufactured, the “XXXX” is an auto-

generated number, and “Z” refers to a wafer number in a

lot batch.

Mounting Configuration

Notes:

1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device

can occur without the use of one.

2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and

have a final plated thru diameter of .25 mm (.010”) or equivalent.

3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat

sink.

5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink.

6. RF Trace width depends upon the PC board material and construction.

7. Use 1 oz. Copper minimum.

8. All dimensions are in millimeters (inches). Angles are in degrees.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

- 20 of 21 -

Connecting the Digital World to the Global Network^®

AH225

1W High Linearity InGaP HBT Amplifier

Product Compliance Information

ESD Information

Solderability

Compatible with the latest version of J-STD-020, Lead

free solder, 260°.

This part is compliant with EU 2002/95/EC RoHS

directive (Restrictions on the Use of Certain Hazardous

Substances in Electrical and Electronic Equipment).

ESD Rating:

Value:

Test:

Class 1C

Passes ≥ 1000 V min.

Human Body Model (HBM)

JEDEC Standard JESD22A114-E

Standard:

This product also has the following attributes:

•

Lead Free

ESD Rating:

Value:

Test:

Class IV

Halogen Free (Chlorine, Bromine)

Antimony Free

Passes ≥ 1000 V min.

Charged Device Model (CDM)

JEDEC Standard JESD22C101-C

TBBP-A (C₁₅H₁₂Br₄0₂) Free

PFOS Free

Standard:

SVHC Free

MSL Rating

Level 2 at +260 ^°C convection reflow

The part is rated Moisture Sensitivity Level 2 at 260^°C per JEDEC

standard IPC/JEDEC J-STD-020.

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com

Email: info-sales@tqs.com

Tel:

Fax:

+1.503.615.9000

+1.503.615.8902

For technical questions and application information:

Email: sjcapplications.engineering@tqs.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint

assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained

herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with

the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest

relevant information before placing orders for TriQuint products. The information contained herein or any use of such

information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property

rights, whether with regard to such information itself or anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining

applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

Data Sheet: Rev F 05/17/12

Disclaimer: Subject to change without notice

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