ALT6181现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

ALT6526

Multi-Band LTE/CDMA/WCDMA/HSPA

Power Ampliﬁer

DATA SHEET - Rev 2.5

FEATURES

•

LTE, WCDMA/HSPA & CDMA/EVDO

Applications

•

High Output Power

•

≥ +27.3 dBm in LTE

≥ +28.6 dBm in WCDMA (R99)

≥ +27.5 dBm in CDMA (RC1)

AL

T6526

•

High Efﬁciency

•

40% in high power mode (WCDMA mode)

•

Low proﬁle 5 mm x 7 mm x 0.9 mm package

2 input ports, 5 output ports, all matched to

50 Ω impedance

•

Integrated voltage regulator

Built-in Directional Coupler

Internal DC block on IN/OUT RF ports

Low leakage in shutdown mode

ESD Protection on all pins

22 Pin 5 mm x 7 mm x 0.9 mm

Surface Mount Module

RoHS-compliant package, MSL-3, 260°C

APPLICATIONS

•

LTE, WCDMA/HSPA handsets and data

devices operating in UMTS Bands 1, 2, 3, 4, 5,

8, 9,10, 18, 19, 20, 25, and 26

•

CDMA/EV-DO handsets and data devices

operating in Band Class 0, 1, 4, 6, 8, 10, 14G

and 15

other for 1700/1900/2100MHz bands. An innovative

design allows the module to switch output among

as many as 5 different frequency bands. Both the

input and output RF ports are internally matched to

50 Ω. The ALT6526 offers improved efﬁciency and

low quiescent current, and includes integrated daisy

chained couplers to simplify board design and layout.

PRODUCT DESCRIPTION

The ALT6526 Power Ampliﬁer module is designed for

3G/4G handsets, smartphones, modems and modules

operating in LTE, WCDMA/HSPA and CDMA/EVDO

modes. The module includes separate InGaP HBT

ampliﬁer chains - one to support 850/900 bands, the

Figure 1: Block Diagram

07/2013

ALT6526

RF^OUT_2100

RFOUT_1700

1

2

3

22

21

RFIN_HI

GND

20

19

18

VBATT

RFOUT_1900

GND

V

CC1

4

5

6

CPL^OUT

VEN_HI

V

CC

V

BAND0

BAND1

17

16

VCC

V

7

8

9

VMODE

VCC

15

14

13

GND

VEN_LO

RF^OUT_850

RFOUT_900

10

11

GND

RF^IN_LO

12

Figure 2: Pinout (X-ray Top View)

Table 1: Pin Description

NAME

RF^IN_HI

GND

DESCRIPTION

RF Input for

12

NAME

DESCRIPTION

1

RF^OUT_900

RF Output for 900 MHz Band

RF Output for 850 MHz Band

1700/1800/1900 MHz Bands

13

RF^OUT_850

GND

2

Ground

14

15

16

17

18

19

3

4

5

6

7

8

VBATT

Ground

Battery Voltage

VCC

VCC1

Supply Voltage

Coupler Output Port

Ground

Supply Voltage

VEN_HI

Enable Voltage for High Bands

Low Band Select Voltage

High Band Select Voltage

Mode Control Voltage

V

BAND0

BAND1

CPL^_OUT

GND

VMODE

20

RF^OUT_1900

9

VEN_LO

RF Output for 1900 MHz Band

Enable Voltage for Low Bands

21

22

RF^OUT_1700

RF^OUT_2100

10

11

RF Output for 1700 MHz Band

RF Output for 2100 MHz Band

GND

Grounds

RF^IN_LO

RF input for 850/900 MHz Bands

DATA SHEET - Rev 2.5

2

07/2013

ALT6526

ELECTRICAL CHARACTERISTICS

Table 2: Absolute Minimum and Maximum Ratings

PARAMETER

MIN

0

MAX

+5

UNIT

Supply Voltage (V^BATT, VCC

,

V

CC1

)

V

Control Voltages (V^MODE, V^BAND0/1

)

0

+3.5

+10

Enable Voltages (VEN_HI, VEN_LO

)

0

V

Input RF power (RF^IN_HI, RFIN_LO

)

-

dBm

ᑻC

Storage temperature

-40

+150

Stresses in excess of the absolute ratings may cause permanent damage.

Functional operation is not implied under these conditions. Exposure to

absolute ratings for extended periods of time may adversely affect reliability.

Table 3: DC Operating Parameters

PARAMETER

MIN

+0.7

+2.9

TYP

+3.3

MAX UNIT COMMENTS

Supply Voltage (V^CC& VCC1)

Supply Voltage (V^BATT)

+4.35

V

+1.35

0

+1.8

-

+3.1

+0.4

Select High State

Select Low State

Control Voltages (V^MODE, VBAND0/1)

Enable Voltage (V^EN_HI, VEN_LO)

V

+1.35

0

+1.8

-

+3.1

+0.4

Select High State

Select Low State

Mode Control Current

Enable Current

-

<0.1

2.3

0.12

5

mA

through V^MODEpin, VMODE = +1.8 V

through V^EN_HI, VEN_LO

BAND Control Current

BATT Current

through VBAND0 or VBAND1 pins

through V^BATTpin, VMODE = +1.8 V

V^BATT= +4.5 V, VCC = +4.5 V,

Shutdown Mode

Leakage Current (total)

-

<5

11

µA

(All VBATT & VCC Pins)

DATA SHEET - Rev 2.5

3

07/2013

ALT6526

Table 4: RF Operating Ranges

PARAMETER

MIN

TYP

MAX UNIT COMMENTS

816

814

880

1710

1850

1920

-

849

862

915

1785

1915

1980

UMTS Band 5, 19, BC 0, BC 10

UMTS Band 18, 20, 26

UMTS Band 8

UMTS Band 3, 4, 9, 10, BC 4, 8, 15

UMTS Band 2 & 25, BC 1 & 14G

UMTS Band 1, BC 6

Operating Frequency (f)

MHz

Output Power (UMTS)

R99, HPM

+28.0 ⁽¹⁾+28.6

+26.9 ⁽¹⁾+27.5

+26.8 ⁽¹⁾+27.4

+10.0 ⁽¹⁾+10.6

-

UMTS Band 1, 3, 4, 5, 9, 10, 19

UMTS Band 18, 20, 26

HSPA (MPR = 0), HPM ⁽²⁾

LTE (MPR = 0), HPM ⁽³⁾

R99, HPM

HSPA (MPR = 0), LPM ⁽²⁾

LTE (MPR = 0), LPM ⁽³⁾

LTE (MPR = 0), HPM ⁽³⁾

LTE (MPR = 0), LPM ⁽³⁾

R99, HPM

+9.0 ⁽¹⁾

+26.7

+9.0

+9.6

+27.3

+9.6

UMTS Band 18, 20, 26

UMTS Band 2, 25

+28.4 ⁽¹⁾+29.0

+27.3 ⁽¹⁾+27.9

+27.1 ⁽¹⁾+27.7

+10.0 ⁽¹⁾+10.6

HSPA (MPR = 0), HPM ⁽²⁾

LTE (MPR = 0), HPM ⁽³⁾

R99, LPM

dBm UMTS Band 2, 25

UMTS Band 2, 25

UMTS Band 8

HSPA (MPR = 0), LPM ⁽²⁾

LTE (MPR = 0), LPM ⁽³⁾

R99, HPM

+9.0 ⁽¹⁾

+9.6

+28.1 ⁽¹⁾+28.7

+27.0 ⁽¹⁾+27.6

+26.9 ⁽¹⁾+27.5

+10.0 ⁽¹⁾+10.6

HSPA (MPR = 0), HPM ⁽²⁾

LTE (MPR = 0), HPM

R99, LPM

UMTS Band 8

HSPA (MPR = 0), LPM ⁽²⁾

LTE (MPR = 0), LPM

+9.0 ⁽¹⁾

+9.6

UMTS Band 8

CDMA Output Power

CDMA2000 (RC1), HPM

CDMA2000 (RC1), LPM

CDMA2000 (RC1), HPM

CDMA2000 (RC1), LPM

CDMA2000 (RC1), HPM

CDMA2000 (RC1), LPM

+27.1 ⁽¹⁾+27.7

+9.0 ⁽¹⁾

+9.6

+26.9 ⁽¹⁾+27.5

+9.0 ⁽¹⁾

+9.6

-

Band Class 4, 6, 8, 15

Band Class 0, 10

dBm

+27.5 ⁽¹⁾+28.1

Band Class 1, 14G

+9.0 ⁽¹⁾

+9.6

Case Temperature (T^C)

-40

-

+105

8C

The device may be operated safely over these conditions; however, parametric performance is guaranteed only

over the conditions deﬁned in the electrical speciﬁcations.

Notes:

(1) For operations at 3.2 V or 105 8C, POUT is derated by 0.6 dB.

(2) 3GPP TS 34.121-1, Rec .8 Table C 11.1.3 subtest 1.

(3) LTE waveform characteristics: up to 20 MHz BW, QPSK, RB = 18.

DATA SHEET - Rev 2.5

4

07/2013

ALT6526

Table 4a: Electrical Speciﬁcations - Band 1 (2100 MHz) LTE Operation (RB = 12, START = 0, QPSK)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P^OUT

VCC

VMODE

25

-

9

28.5

19

13

32.5

-

16

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

Gain

dB

-

-38

-41

-40

-34

-

-34

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

E-UTRA at ± 10 MHz offset

ACLR1 at ± 7.5 MHz offset ⁽¹⁾

ACLR2 at ± 12 MHz offset

dBc

-

-39

-40

-41

-36

-

-36

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

-

-60

-40

-

-40

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

30.5

-

36

3.5

-

+27.4 dBm

+9.6 dBm

3.3 V

0 V

+1.8 V

Efﬁciency ⁽¹⁾

%

through V^CC1+ VCC pins,

VMODE = 1.8 V

Quiescent Current

-

40

-

mA

Noise in Receive Band

GPS Noise

-

-135

-137

-145

-

dBm/Hz 2110 - 2170 MHz

dBm/Hz P^OUT≤ 27.4 dBm

ISM Noise

Out of Band Gain

Rx Band

GPS Band

ISM Band

-

G - 2.8

G - 2.4

G - 8

-

dB

G = In-band Gain

Harmonics

2f^O

3fO, 4fO

-

-42

-50

-30

-35

dBc

VSWR

dBc

Input Impedance

-

2:1

-70

Suprious Output Level

(all spurious outputs)

See note 2.

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR Applies over full operating range

Coupling factor

-

27.5

dB

DATA SHEET - Rev 2.5

5

07/2013

ALT6526

Table 4b: Electrical Speciﬁcations - Band 1 (2100 MHz) WCDMA Operation (R99 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P

OUT

V

MODE

-

-41

-40

-37

+28.6 dBm

+10.6 dBm

0 V

ACLR1 at 5 MHz offset ⁽¹⁾

ACLR2 at 10 MHz offset

dBc

%

1.8 V

-

-55

<-60

-48

+28.6 dBm

+10.6 dBm

0 V

1.8 V

35

-

41

4

-

+28.6 dBm

+10.6 dBm

0 V

1.8 V

(1)

Efficiency

Table 4c: Electrical Speciﬁcations - Band Class 6 (2100 MHz) CDMA 2000 Operation (RC-1 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

dBc

P

OUT

V

MODE

Adjacent Channel Power ⁽¹⁾

at ± 1.25 MHz offset

Primary Channel BW = 1.23 MHz

-

-51

-46.5

+27.7 dBm

+9.6 dBm

0 V

1.8 V

Alternate Channel Power ⁽¹⁾

at ± ±1.98 MHz offset

Primary Channel BW = 1.23 MHz

-

-57

<-60

-54

+27.7 dBm

+9.6 dBm

0 V

1.8 V

dBc

Notes (Applicable to Tables 4a, 4b and 4c):

(1) ACLR and Efﬁciency measured at 1950 MHz.

(2) P^OUT< +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions.

DATA SHEET - Rev 2.5

6

07/2013

ALT6526

Table 5a: Electrical Speciﬁcations - Band 2/25 (1900 MHz) LTE Operation (RB = 12, START = 0, QPSK)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P^OUT

VCC

VMODE

25.5

-

10

28.5

20

13.5

32

-

16.5

+27.7 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

Gain

dB

-

-38

-42

-40

-34

-

-34

+27.7 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

E-UTRA at ± 10 MHz offset

ACLR1 at ± 7.5 MHz offset ⁽¹⁾

ACLR2 at ± 12 MHz offset

dBc

-

-39

-43

-41

-36

-

-36

+27.7 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

-

-60

-40

-

-40

+27.7 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

30.5

-

36

3.5

-

+27.7 dBm

+9.6 dBm

3.3 V

0 V

+1.8 V

Efﬁciency ⁽¹⁾

%

through V^CC1+ VCC pins,

V^MODE= 1.8 V

Quiescent Current

-

40

-

mA

Noise in Receive Band

GPS Noise

-

-135

-137

-149

-

dBm/Hz 1930 - 1990 MHz

dBm/Hz P^OUT≤ 27.7 dBm

ISM Noise

Out of Band Gain

Rx Band

GPS Band

ISM Band

-

G - 0.5

G - 0.8

G - 8

-

dB

G = In-band Gain

Harmonics

2f^O

3fO, 4fO

-

-40

-46

-35

dBc

VSWR

dBc

Input Impedance

-

2:1

-70

Suprious Output Level

(all spurious outputs)

See note 2

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR Applies over full operating range

Coupling factor

-

29

dB

DATA SHEET - Rev 2.5

7

07/2013

ALT6526

Table 5b: Electrical Speciﬁcations - Band 2/25 (1900 MHz) WCDMA Operation (R99 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P

OUT

V

MODE

-

-41

-40

-37

+29.0 dBm

+10.6 dBm

0 V

ACLR1 at 5 MHz offset ⁽¹⁾

ACLR2 at 10 MHz offset

dBc

%

1.8 V

-

-53

<-60

-48

+29.0 dBm

+10.6 dBm

0 V

1.8 V

35

-

40

4

-

+29.0 dBm

+10.6 dBm

0 V

1.8 V

(1)

Efficiency

Table 5c: Electrical Speciﬁcations - Band Class 1 (1900 MHz) CDMA2000 Operation (RC-1 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

dBc

P

OUT

V

MODE

Adjacent Channel Power ⁽¹⁾

at ± 1.25 MHz offset

Primary Channel BW = 1.23 MHz

-

-52

-51

-46.5

+28.1 dBm

+9.6 dBm

0 V

1.8 V

Alternate Channel Power ⁽¹⁾

at ± ±1.98 MHz offset

Primary Channel BW = 1.23 MHz

-

-57

<-60

-54

+28.1 dBm

+9.6 dBm

0 V

1.8 V

dBc

Notes (Applicable to Tables 5a, 5b and 5c):

(1) ACLR and Efﬁciency measured at 1882.5 MHz.

(2) Pout ≤ 27.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR ≤ 10:1. Applies over all operating conditions

DATA SHEET - Rev 2.5

8

07/2013

ALT6526

Table 6a: Electrical Speciﬁcations - Band 3/4 (1700 MHz) LTE Operation (RB = 12, START = 0, QPSK)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P^OUT

VCC

VMODE

26

-

9

28.5

18

13

32.5

-

16

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

Gain

dB

-

-38

-39

-40

-34

-

-34

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

E-UTRA at ± 10 MHz offset

ACLR1 at ± 7.5 MHz offset ⁽¹⁾

ACLR2 at ± 12 MHz offset

dBc

-

-39

-40

-41

-36

-

-36

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

-

-60

-40

-

-40

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

30.5

-

36

3.5

-

+27.4 dBm

+9.6 dBm

3.3 V

0 V

+1.8 V

Efﬁciency ⁽¹⁾

%

mA

through V^CC1+ VCC2 pins, VMODE =

1.8 V

Quiescent Current

Noise in Receive Band

-

40

-

-135

-142

-

1805 - 1880 MHz

2110 - 2155 MHz

dBm/Hz

GPS Noise

ISM Noise

-

-134

-149

-

dBm/Hz P^OUT≤ 27.4 dBm

Out of Band Gain

Rx Band (B3)

Rx Band (B4)

GPS Band

-

G

-

G - 2

G - 1

G - 10

dB

G = In-band Gain

ISM Band

Harmonics

2f^O

3fO, 4fO

-

-42

-55

-30

-35

dBc

VSWR

dBc

P^OUT≤ +27.4 dBm

Input Impedance

-

2:1

-

Suprious Output Level

(all spurious outputs)

-

-70

See note 2.

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR Applies over full operating range

Coupling factor

-

28.5

dB

DATA SHEET - Rev 2.5

9

07/2013

ALT6526

Table 6b: Electrical Speciﬁcations - Band 3/4 (1700 MHz) WCDMA Operation (R99 Waveform)

(+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P

OUT

V

MODE

-

-41

-40

-37

+28.6 dBm

+10.6 dBm

0 V

ACLR1 at 5 MHz offset ⁽¹⁾

ACLR2 at 10 MHz offset

Efficiency⁽¹⁾

dBc

%

1.8 V

-

-55

<-60

-48

+28.6 dBm

+10.6 dBm

0 V

1.8 V

35

-

41

4

-

+28.6 dBm

+10.6 dBm

0 V

1.8 V

Table 6c: Electrical Speciﬁcations - Band Class 8 (1700 MHz) CDMA Operation (RC-1 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

dBc

P

OUT

V

MODE

Adjacent Channel Power ⁽¹⁾

at ± 1.25 MHz offset

Primary Channel BW = 1.23 MHz

-

-52

-46.5

+27.7 dBm

+9.6 dBm

0 V

1.8 V

Alternate Channel Power ⁽¹⁾

at ± ±1.98 MHz offset

Primary Channel BW = 1.23 MHz

-

-57

<-60

-54

+27.7 dBm

+9.6 dBm

0 V

1.8 V

dBc

Notes (Applicable to Tables 6a, 6b and 6c):

(1) ACLR and Efﬁciency measured at 1747.5 MHz.

(2) POUT < +28.6 dBm; In-band load VSWR < 5:1; Out-of-band load VSWR < 10:1; Applies over all operating conditions.

DATA SHEET - Rev 2.5

10

07/2013

ALT6526

Table 7a: Electrical Speciﬁcations - Band 5 (850 MHz) LTE Operation (RB = 12, START = 0, QPSK)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V )

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P^OUT

VCC

VMODE

25.5

-

10

28

17

13

31.5

-

16.5

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

Gain

dB

-

-38

-41

-40

-34

-

-34

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

E-UTRA at ± 10 MHz offset

ACLR1 at ± 7.5 MHz offset ⁽¹⁾

ACLR2 at ± 12 MHz offset

dBc

-

-39

-42

-40

-36

-

-36

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

-

-60

-40

-

-40

+27.4 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

30.5

-

35

4

-

+27.4 dBm

+9.6 dBm

3.3 V

0 V

+1.8 V

Efﬁciency ⁽¹⁾

%

mA

through V^CC1+ VCC pins,

V^MODE= 1.8 V

Quiescent Current

Noise in Receive Band

-

35

-

-132

-136

-

741 - 821 MHz ⁽²⁾

862 - 894 MHz

dBm/Hz

GPS Noise

ISM Noise

-

-158

-160

-

dBm/Hz P^OUT≤ 27.4 dBm

Out of Band Gain

Rx Band

GPS Band

ISM Band

-

G - 0.7

G - 40

G - 50

-

dB

G = In-band Gain

Harmonics

2f^O

3fO, 4fO

-

-44

-50

-35

dBc

VSWR

dBc

P^OUT≤ +27.4 dBm

Input Impedance

-

2:1

-

Suprious Output Level

(all spurious outputs)

-

-70

See note 3.

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR Applies over full operating range

Coupling factor

-

27.5

dB

DATA SHEET - Rev 2.5

11

07/2013

ALT6526

Table 7b: Electrical Speciﬁcations - Band 5 (850 MHz) WCDMA Operation (R99 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V )

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P

OUT

V

MODE

-

-41

-37

+28.6 dBm

+10.6 dBm

0 V

ACLR1 at 5 MHz offset ⁽¹⁾

ACLR2 at 10 MHz offset

dBc

%

1.8 V

-

-57

<-60

-48

+28.6 dBm

+10.6 dBm

0 V

1.8 V

34

-

39

4

-

+28.6 dBm

+10.6 dBm

0 V

1.8 V

(1)

Efficiency

Table 7c: Electrical Speciﬁcations - Band Class 0/10 (850 MHz) CDMA2000 Operation (RC-1 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V )

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

dBc

P

OUT

V

MODE

Adjacent Channel Power ⁽¹⁾

at ± 885KHz offset

Primary Channel BW = 1.23 MHz

-

-51

-50

-46.5

+27.5 dBm

+9.6 dBm

0 V

1.8 V

Alternate Channel Power ⁽¹⁾

at ± ±1.98 MHz offset

Primary Channel BW = 1.23 MHz

-

-60

<-63

-57

+27.5 dBm

+9.6 dBm

0 V

1.8 V

dBc

Notes (Applicable to Tables 7a, 7b and 7c):

(1) ACLR and Efﬁciency measured at 833 MHz.

(2) TS36.101, Table 7.3.1-2

(3) POUT < +28.6 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions.

DATA SHEET - Rev 2.5

12

07/2013

ALT6526

Table 8a: Electrical Speciﬁcations - Band 8 (900 MHz) LTE Operation (RB = 12, START = 0, QPSK)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

dB

P^OUT

VCC

VMODE

25.5

-

28

17

31.5

-

+27.5 dBm

+3 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

Gain

9.5

12.5

16

+9.6 dBm

-

-38

-39

-34

-

-34

+27.5 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

E-UTRA at ± 10 MHz offset

ACLR1 at ± 7.5 MHz offset ⁽¹⁾

ACLR2 at ± 12 MHz offset

dBc

-

-39

-40

-41

-36

-

-36

+27.5 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

-

-60

-40

-

-40

+27.5 dBm

+3 dBm

+9.6 dBm

3.3 V

0.7 V

3.3 V

0 V

+1.8 V

30.5

-

35

4

-

+27.5 dBm

+9.6 dBm

3.3 V

0 V

+1.8 V

Efﬁciency ⁽¹⁾

%

through V^CC1+ VCC pins,

V^MODE= 1.8 V

Quiescent Current

-

35

-

mA

Noise in Receive Band

GPS Noise

-

-136

-160

-

dBm/Hz 925 - 960 MHz

dBm/Hz P^OUT≤ 27.5 dBm

ISM Noise

Out of Band Gain

Rx Band

GPS Band

ISM Band

-

G - 0.5

G - 30

G - 50

-

dB

G = In-band Gain

Harmonics

2f^O

3fO, 4fO

-

-42

-50

-30

-35

dBc

VSWR

dBc

POUT ≤ +27.5 dBm

Input Impedance

-

2:1

-70

Suprious Output Level

(all spurious outputs)

See note 2.

Load mismatch stress with

no permanent degradation or

failure

8:1

-

VSWR Applies over full operating range

Coupling factor

-

27.5

dB

DATA SHEET - Rev 2.5

13

07/2013

ALT6526

Table 8b: Electrical Speciﬁcations - Band 8 (900 MHz) WCDMA Operation (R99 Waveform)

(+25 8C, V^BATT= VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V)

COMMENTS

PARAMETER

MIN

TYP

MAX

UNIT

P

OUT

V

MODE

-

-41

-40

-37

+28.7 dBm

+9.6 dBm

0 V

ACLR1 at 5 MHz offset ⁽¹⁾

ACLR2 at 10 MHz offset

dBc

%

1.8 V

-

-56

<-60

-48

+28.7 dBm

+9.6 dBm

0 V

1.8 V

34

-

+28.7 dBm

+9.6 dBm

0 V

1.8 V

39

4

Efficiency ⁽¹⁾

Notes (Applicable to Tables 8a and 8b):

(1) ACLR and Efﬁciency measured at 897.5 MHz.

(2) POUT < +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions.

DATA SHEET - Rev 2.5

14

07/2013

ALT6526

LOGIC PROGRAMMING

Table 9: Logic Interface Speciﬁcations

MODE OF OPERATION

V

EN_HI

V

EN_LO

V

BAND0

V

BAND1

V

MODE

UMTS Band 1, CDMA BC 6

High

Low

X

UMTS Band 2 & 25

CDMA BC 1, 6, 14G

High

UMTS Band 3, 4, 9, 10

CDMA BC 4, 8, 15

High

Low

High

Low

X

UMTS Band 5, 18, 19, 20, 26

BC 0, 10

High

UMTS Band 8

Standby Mode

Low

X

High

Low

X

Low

X

Low

X

Shutdown Mode

Low

X

Low

X

High Power Mode (HPM)

Low Power Mode (LPM)

Low

X

High

APPLICATION INFORMATION

22

2.2µF 0.01µF

1

2

RF^OUT_2100

RFIN_HI

21

20

RFOUT_1700

GND

V

BATT

C7

C5

C6

C4

3

4

V

BATT

CC1

RFOUT_1900

19

18

V

GND

V

CC1

5

6

7

VEN_HI

CPL^OUT

VCC

17

16

V

BAND0

BAND1

VCC

2.2µF

68pF

C1

C3

C2

V

CC

8

9

15

14

13

V

MODE

V

CC

68pF

2.2uF

0.01µF

V

EN_LO

GND

RF^{OUT_ 850}

RFOUT_900

10

GND

11

12

RFIN_LO

GND

SLUG

Figure 3: Evaluation Board

DATA SHEET - Rev 2.5

15

07/2013

ALT6526

PACKAGE OUTLINE

Figure 4: Package Outline - 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module

ANADIGICS logo

Pin 1 Identifier

Part Number

ALT6526

LLLLLNN

YYWWCC

Lot Number

Date Code

YY= Year WW= Work Week

Country Code (CC)

Figure 5: Branding Speciﬁcation

DATA SHEET - Rev 2.5

16

07/2013

ALT6526

ORDERING INFORMATION

TEMPERATURE

RANGE

PACKAGE

DESCRIPTION

ORDER NUMBER

COMPONENT PACKAGING

RoHS Compliant 22 Pin

ALT6526P8

-40 ^oC to +105 ^oC 5 mm x 7 mm x 0.9 mm Tape and Reel, 2500 pieces per Reel

Surface Mount Module

RoHS Compliant 22 Pin

-40 ^oC to +105 ^oC 5 mm x 7 mm x 0.9 mm Partial Tape and Reel

Surface Mount Module

ALT6526P9

anaDigiCS

141 Mount Bethel Road

Warren, New Jersey 07059, U.S.A.

Tel: +1 (908) 668-5000

Fax: +1 (908) 668-5132

URL: http://www.anadigics.com

iMPOrTanT nOTiCE

ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.

The product speciﬁcations contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to

change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed

to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers

to verify that the information they are using is current before placing orders.

warning

ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product

in any such application without written consent is prohibited.

DATA SHEET - Rev 2.5

17

07/2013

型号:	ALT6526P9
是否Rohs认证：	符合
生命周期：	Contact Manufacturer
IHS 制造商：	II-VI INC
包装说明：	,
Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01
风险等级：	5.39
Is Samacsys：	N
JESD-30 代码：	R-XDMA-N22
长度：	7 mm
湿度敏感等级：	3
功能数量：	1
端子数量：	22
封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	260
座面最大高度：	0.994 mm
标称供电电压：	3.3 V
表面贴装：	NO
电信集成电路类型：	RF AND BASEBAND CIRCUIT
端子形式：	NO LEAD
端子节距：	0.6 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	5 mm
Base Number Matches：	1

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