AO3402芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO3402的概述

芯片AO3402的概述 AO3402是一款广泛应用于电子电路的N沟道增强型场效应晶体管（MOSFET）。该器件的独特特性使其在功率转换、开关电源、LED驱动以及其它低电压与高电流的应用中表现优异。AO3402由AOS（Alpha & Omega Semiconductor）公司生产，其设计初衷是为了满足高效率和低功耗的电子产品的需求。此晶体管的高开关速度和低导通阻抗使其成为现代电子设计中的热门选择。芯片AO3402的详细参数 AO3402的主要参数如下： - 最大漏极-源极电压 (V_DS): 30V - 最大漏极电流 (I_D): 8A（在适当的散热条件下） - 导通电阻 (R_DS(on)): 24mΩ（在V_GS=10V时） - 栅极-源极电压 (V_GS): ±20V - 总门电荷 (Q_g): 16.2nC（在V_GS=10V和V_DS=15V时） - 工作温度范围: -5...

产品型号AO3402的Datasheet PDF文件预览

AO3402

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO3402 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as

a load switch or in PWM applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

< 52mΩ

< 65mΩ

< 85mΩ

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

3.2

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

1.4

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

125

R_θJA

Steady-State

100

R_θJL

Rev 6: Jan. 2011

www.aosmd.com

Page 1 of 5

AO3402

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=30V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS=±12V

V_DS=V_GSI_D=250µA

V_GS=10V, V_DS=5V

V_GS=10V, I_D=4A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

±100

1.5

V_GS(th)

I_D(ON)

0.5

mΩ

T_J=125°C

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=3A

mΩ

V_GS=2.5V, I_D=2A

V_DS=5V, I_D=3.6A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.75

Maximum Body-Diode Continuous Current

1.5

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

185

235

285

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

2.1

4.3

6.5

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

4.7

Q_g(4.5V) Total Gate Charge

V_GS=10V, V_DS=15V, I_D=4A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

0.95

1.6

3.5

V_GS=10V, V_DS=15V, R_L=3.75Ω,

R_GEN=3Ω

1.5

t_D(off)

t_f

17.5

2.5

t_rr

I_F=4A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

8.5

2.6

Q_rr

3.5

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT_J=25°C.

D. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in²FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 6: Jan. 2011

www.aosmd.com

Page 2 of 5

AO3402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_DS=5V

4.5V

2.5V

125°C

V_GS=2.0V

25°C

0.5

1.5

2.5

V_GS(Volts)

V_DS(Volts)

Fig 1: On-Region Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

1.8

V_GS=2.5V

1.6

1.4

1.2

V_GS=4.5V

I_D=3A

V_GS=10V

V_GS=4.5V

I_D=4A

V_GS=2.5V

I_D=2A

V_GS=10V

0.8

100

125

150

175

I_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

120

100

1.0E+02

1.0E+01

I_D=4A

1.0E+00

125°C

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 6: Jan. 2011

www.aosmd.com

Page 3 of 5

AO3402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

400

V_DS=15V

I_D=4A

350

300

250

200

150

100

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

10000

1000

100

100.0

10.0

1.0

T_A=25°C

R_DS(ON)

limited

10µs

100µs

1ms

10ms

0.1

T_J(Max)=150°C

T_A=25°C

10s

0.0

0.00001

0.001

0.1

1000

0.01

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=125°C/W

0.1

0.01

P_D

Single Pulse

0.001

T_on

0.001

0.00001

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 6: Jan. 2011

www.aosmd.com

Page 4 of 5

AO3402

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgd

Vds

VDC

DUT

Vgs

Igg

Resistive Switching Test Circuit & W aveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Diode Recovery Test Circuit & Waveforms

Q _rr= - Idt

Vds +

DUT

Vgs

t_rr

Vds -

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 6: Jan. 2011

www.aosmd.com

Page 5 of 5

配单直通车

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

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柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

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深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

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首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

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AO3402产品参数

型号:	AO3402
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Not Recommended
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	7.91
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	4 A
最大漏源导通电阻：	0.052 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	25 pF
JESD-30 代码：	R-PDSO-G3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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