AO3406芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO3406的概述

芯片AO3406的概述 AO3406是一种广泛应用于电子电路中常用的小信号N通道MOSFET（金属氧化物半导体场效应晶体管），主要用于开关和放大器电路。它属于增强型MOSFET类型，具有较低的开启阈值电压和较高的导电能力，因此在低电压及低功耗的应用中表现出色。AO3406能支持频繁的开关操作，适用于各种电子设备的电源管理、信号开关、负载驱动等场合。该芯片采用现代半导体制造工艺，具有优良的热稳定性和抗干扰能力，使其在多种操作环境中能够稳定工作。由于其较低的R_DS(on)（导通电阻）值，AO3406在高频应用中同样表现优秀，是众多设计工程师的首选部件之一。芯片AO3406的详细参数 AO3406具有一系列值得关注的电气特性和物理参数。其主要参数包括： - 最大漏极-源极电压（V_DS）: 30V - 最大连续漏极电流（I_D）: 5.8A - 阈值电压（V_GS(th)）: 1.8V...

产品型号AO3406的Datasheet PDF文件预览

AO3406

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3406 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3406 is Pb-free

(meets ROHS & Sony 259 specifications). AO3406L

is a Green Product ordering option. AO3406 and

AO3406L are electrically identical.

V_DS(V) = 30V

I_D= 3.6A (V_GS= 10V)

_DS(ON)< 65mΩ (V_GS= 10V)

_DS(ON)< 105mΩ (V_GS= 4.5V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

3.6

T_A=25°C

T_A=70°C

I_D

2.9

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

0.9

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO3406

Electrical Characteristics (T =25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

_DS=24V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS=±20V

100

V_GS(th)

I_D(ON)

V_DS=V_GSI_D=250µA

1.9

_GS=10V, V_DS=5V

_GS=10V, I_D=3.6A

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

100

105

_GS=4.5V, I_D=2.8A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=5V, I_D=3.6A

I_S=1A

0.79

Maximum Body-Diode Continuous Current

2.5

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

288

375

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Q_g(4.5V)

Q_gs

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

6.5

3.1

1.2

1.6

4.6

1.9

20.1

2.6

10.2

3.5

8.5

V_GS=10V, V_DS=15V, I_D=3.6A

Q_gd

t_D(on)

t_r

t_D(off)

t_f

V_GS=10V, V_DS=15V, R_L=2.2Ω,

R_GEN=3Ω

t_rr

I_F=3.6A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

SOA curve provides a single pulse rating.

Rev 5 : July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha and Omega Semiconductor, Ltd.

AO3406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

4.5V

V_DS=5V

3.5V

125°C

V_GS=3V

25°C

1.5

2.5

3.5

4.5

V_GS(Volts)

V_DS(Volts)

Figure 2: Transfer Characteristics

Fig 1: On-Region Characteristics

100

1.8

1.6

1.4

1.2

I_D=3.6A

V_GS=4.5V

V_GS=10V

0.8

100

125

150

175

I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

200

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=3.6A

125°

150

100

125°C

25°C

25°

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_SD(Volts)

V_GS(Volts)

Figure 6: Body-Diode Characteristics

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha and Omega Semiconductor, Ltd.

AO3406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

400

300

200

100

V_DS=15V

I_D=3.6A

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

T_J(Max)=150°C

T_A=25°C

T_J(Max)=150°C

T_A=25°C

10µs

R_DS(ON)

limited

100µs

1ms

0.1s

10ms

10s

0.1

100

0.001

0.01

0.1

100

1000

V_DS(Volts)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=90°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P_D

0.1

T_on

Single Pulse

0.001

0.01

0.00001

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha and Omega Semiconductor, Ltd.

配单直通车

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产品型号AO3406的概述

产品型号AO3406的Datasheet PDF文件预览

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