AO4406A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
1.9
100
A
9.5
14
11.5
17
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=10A
12.5
45
15.5
mΩ
S
VDS=5V, ID=12A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.75
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
610
88
760
125
70
910
160
100
2.4
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
40
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12A
VGS=10V, VDS=15V, RL=1.25Ω,
0.8
1.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
5
14
6.6
2.4
3
17
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.9
1.8
2.9
4.2
4.4
9
ns
RGEN=3Ω
tD(off)
tf
17
6
ns
ns
trr
IF=12A, dI/dt=500A/µs
IF=12A, dI/dt=500A/µs
5.6
6.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7
8
8
ns
Qrr
nC
9.6
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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