AO4459芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO4459的概述

芯片AO4459的概述 AO4459是一种高效的N沟道MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor），通常用于各种功率转换和开关应用。该芯片的设计使其能够在低通道电压下提供高效率和高载流能力，非常适合现代电子产品中所需的能源管理、马达控制和电源供应系统。其低导通电阻和快速开关特性使其在相对较高的频率下仍表现出色，因此在许多应用领域都显得尤为重要。 AO4459在性能上不仅具备高功率密度，还确保了优异的热管理，与传统的硅基MOSFET相比，其在高温环境下的稳定性及可靠性也有显著提升。该器件经常被集成于DC-DC转换器、LED驱动以及其他功率电子设备中，使得它成为市场上广泛使用的部件之一。芯片AO4459的详细参数 AO4459的详细参数通常包括但不限于以下几个方面： - 类型：N沟道MOSFET - 最大漏极源极电压（...

产品型号AO4459的Datasheet PDF文件预览

AO4459

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4459 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge. This device is suitable

for use as a load switch or in PWM applications. Standard

product AO4459 is Pb-free (meets ROHS & Sony 259

specifications). AO4459L is a Green Product ordering

option. AO4459 and AO4459L are electrically identical.

V_DS(V) = -30V

I_D= -6.5A

(V_GS= -10V)

R_DS(ON)< 46mΩ (V_GS= -10V)

R_DS(ON)< 72mΩ (V_GS= -4.5V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±20

T_A=25°C

T_A=70°C

-6.5

I_D

-5.3

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

3.1

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO4459

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-30

V_DS=-24V, V_GS=0V

-1

-5

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS=±20V

_DS=V_GSI_D=-250µA

_GS=-10V, V_DS=-5V

_GS=-10V, I_D=-6.5A

±100

-2.5

V_GS(th)

I_D(ON)

-1.5

-30

-1.85

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=-4.5V, I_D=-5A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=-5V, I_D=-6.5A

I_S=-1A,V_GS=0V

-0.78

-1

Maximum Body-Diode Continuous Current

-3.5

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

668

126

830

Ω

_GS=0V, V_DS=-15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

12.7

6.4

Q_g(4.5V)

_GS=-10V, V_DS=-15V, I_D=-6.5A

Q_gs

Q_gd

t_D(on)

t_r

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

7.7

6.8

V_GS=-10V, V_DS=-15V, R_L=2.5Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=-6.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The value in

any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6are obtained using< 300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA curve

provides a single pulse rating.

Rev0 Sept 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4459

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-10V

V_DS=-5V

-8V

-5V

-4.5V

125°C

25°C

-4V

V_GS=-3.5V

-40°C

-V_DS(Volts)

-V_GS(Volts)

Figure 1: On-Region Characteristics

Figure 2: Transfer Characteristics

100

1.6

1.4

1.2

1.0

0.8

0.6

V_GS=-10V

I_D=-6.5A

V_GS=-4.5V

V_GS=-10V

V_GS=-4.5V

I_D=-5A

I ₆=-6.5A, dI/dt=100A/µs

-50

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

150

200

-I_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

160

140

120

100

1E+01

1E+00

I_D=-6.5A

1E-01

1E-02

1E-03

125°C

25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

1E-04

25°C

-40°C

OUT OF SUCH APPLI ATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

1E-05

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

1E-06

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_GS(Volts)

-V_SD(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4459

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1200

1000

800

600

400

200

V_DS=-15V

I_D=-6.5A

C_iss

C_oss

C_rss

-Q_g(nC)

Figure 7: Gate-Charge Characteristics

-V_DS(Volts)

Figure 8: Capacitance Characteristics

100

T_J(Max)=150°C

T_A=25°C

100µs

R_DS(ON)

limited

1ms

10ms

T_J(Max)=150°C

T_A=25°C

100ms

10s

0.1

0.001

0.01

0.1

100

1000

I_F=-6.5A, dI/dt=100A/µs

0.1

100

Pulse Width (s)

-V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=75°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DO^DES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

0.01

T_on

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd.

配单直通车

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AO4459产品参数

型号:	AO4459
生命周期：	Not Recommended
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	7.25
Base Number Matches：	1

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