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产品型号AO4616的概述

芯片AO4616的概述 AO4616是一款高效的n沟道增强型场效应管（MOSFET），广泛应用于各种电源管理和开关电路中。作为半导体器件的一员，AO4616凭借其出色的导通性能、低导通阻抗和高速开关能力，成为电子设备设计中不可或缺的一部分。这款芯片通常用于DC/DC转换器、LED驱动、电机控制以及日常消费电子产品等多个领域，充分展示了现代电子行业对高效能和低功耗设计的需求。 AO4616的采用使得设计师能够在提升性能的同时，降低整体系统的电源损耗。例如，在电源管理应用中，AO4616能有效减少热量散发，从而延长设备的工作寿命。此外，其高温稳定性和抗干扰能力，使其在复杂的电子环境下依然表现优异。芯片AO4616的详细参数 AO4616主要参数涵盖了多个技术指标，包括但不限于以下几个方面： 1. 电压额定值（VDS）: 最大可承受电压为30V，这意味着AO4616能够在较高的电压环境中稳...

产品型号AO4616的Datasheet PDF文件预览

AO4616

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4616 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used in

inverter and other applications.Standard

Product AO4616 is Pb-free (meets ROHS

& Sony 259 specifications). AO4616L is a

Green Product ordering option. AO4616

and AO4616L are electrically identical.

n-channel

p-channel

-30V

-7.1A (V_GS= -10V)

R_DS(ON)

V_DS(V) = 30V

I_D= 8.1A (V_GS=10V)

R_DS(ON)

< 20mΩ (V_GS=10V)

< 28mΩ (V_GS=4.5V)

< 25mΩ (V_GS= -10V)

< 40mΩ (V_GS= -4.5V)

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

±20

-30

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current^B

T_A=25°C

T_A=70°C

8.1

-7.1

I_D

6.5

-5.6

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

60 °C/W

Maximum Junction-to-Ambient^A

n-ch

t ≤ 10s

Steady-State

Maximum Junction-to-Lead^C

Steady-State

R_θJA

Maximum Junction-to-Ambient^A

R_θJL

R_θJA

Maximum Junction-to-Ambient^A

p-ch

62.5 °C/W

110 °C/W

40 °C/W

t ≤ 10s

Maximum Junction-to-Ambient^A

Steady-State

Maximum Junction-to-Lead^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO4616

N-Channel Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_DS=24V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS=±20V

V_DS=V_GSI_D=250µA

V_GS=10V, V_DS=5V

100

V_GS(th)

ID_(ON)

1.8

_GS=10V, I_D=8.1A

16.4

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=6A

V_DS=5V, I_D=8.1A

I_S=1A

23.4

g_FS

V_SD

I_S

Forward Transconductance

Body-Diode Forward Voltage

0.75

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1040

180

110

0.7

1250

Ω

V_GS=0V, V_DS=15V, f=1MHz

V_GS=0V, V_DS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

19.2

9.36

2.6

Q_g(4.5V)

V_GS=10V, V_DS=15V, I_D=8.1A

Q_gs

Q_gd

t_D(on)

t_r

4.2

5.2

V_GS=10V, V_DS=15V, R_L=1.8Ω,

R_GEN=3Ω

4.4

t_D(off)

t_f

17.3

3.3

t_rr

I_F=8.1A, dI/dt=100A/µs

16.7

6.7

Body-Diode Reverse Recovery Time

Body-Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The value in any given

application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R _θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA curve provides

a single pulse rating.

Rev 0 : July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AO4616

N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2.00E+01

1.60E+01

1.20E+01

8.00E+00

4.00E+00

0.00E+00

10V

4.5V

V_DS=5V

3.5V

125°C

25°C

V_GS=3V

1.5

2.5

3.5

V_DS(Volts)

V_GS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

1.6

1.4

1.2

V_GS=10V

I_D=8.1A

V_GS=4.5V

I_D=6A

V_GS=10V

0.8

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

I_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

1.0E+01

I_D=8.1A

1.0E+00

1.0E-01

1.0E-02

125°C

25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

1.0E-03

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

25°C

1.0E-04

1.0E-05

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

0.0

0.2

0.4

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4616

N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

1250

1000

750

500

250

V_DS=15V

I_D=8.1A

C_iss

C_oss

C_rss

_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

R_DS(ON)

limited

T_J(Max)=150°C

T_A=25°C

10µs

100µs

1ms

10ms

0.1s

T_J(Max)=150°C

T_A=25°C

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=62.5°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DPOES NOT ASSUME ANY LIABILITY ARISING

0.1

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

T_on

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4616

P-Channel Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-30

V_DS=-24V, V_GS=0V

-1

I_DSS

Zero Gate Voltage Drain Current

µA

-5

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS=±20V

±100

-2.7

V_GS(th)

I_D(ON)

_DS=V_GSI_D=-250µA

-1.4

-2

_GS=-10V, V_DS=-5V

V_GS=-10V, I_D=-7.1A

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

V_GS=-4.5V, I_D=-5.6A

V_DS=-5V, I_D=-7.1A

I_S=-1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

19.6

-0.7

-1

Maximum Body-Diode Continuous Current

-4.2

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1573

319

211

6.7

Ω

_GS=0V, V_DS=-15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Q_g(4.5V)

Q_gs

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

30.9

16.1

_GS=-10V, V_DS=-15V, I_D=-7.1A

Q_gd

4.4

t_D(on)

t_r

t_D(off)

t_f

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

9.5

V_GS=-10V, V_DS=-15V, R_L=2.2Ω,

_GEN=3Ω

44.2

22.2

25.5

14.7

t_rr

I_F=-7.1A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The

Tvahleuevainluaeniyn gainvyenaagpivpelincaatpiopnlicdaetpioenndsepoenntdhseounsethr'es ussperc'sifiscpbeocaifridc dbeosairgdnd. eTshiegnc.uTrrheenct urarrtienngt irsatbinagseisdboanstehdeotn th≤e10t s t≤he1r0msatlhreersmisatlance

reastiinsgta. nce rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R _θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The

SOA curve provides a single pulse rating.

Rev 0 : July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AO4616

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-10V

-5V

V_DS=-5V

-4V

-3.5V

125°C

V_GS=-3V

25°C

3.5

1.5

2.5

4.5

-V_GS(Volts)

-V_DS(Volts)

Figure 17: Transfer Characteristics

Fig 16: On-Region Characteristics

1.60

1.40

1.20

1.00

0.80

I_D=-7.1A

V_GS=-4.5V

V_GS=-10V

V_GS=-4.5V

I_D=-5.6A

V_GS=-10V

100

125

150

175

Temperature (°C)

Figure 19: On-Resistance vs. Junction

Temperature

-I_D(A)

Figure 18: On-Resistance vs. Drain Current and

Gate Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

1.0E-06

I_D=-7.1A

125°C

25°C

0.0

0.2

0.4

-V_SD(Volts)

Figure 21: Body-Diode Characteristics

0.6

0.8

1.0

-V_GS(Volts)

Figure 20: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4616

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2250

2000

1750

1500

1250

1000

750

V_DS=-15V

I_D=-7.1A

C_iss

C_oss

C_rss

500

250

-Q_g(nC)

-V_DS(Volts)

Figure 22: Gate-Charge Characteristics

Figure 23: Capacitance Characteristics

100.0

10.0

1.0

T_J(Max)=150°C, T_A=25°C

T_J(Max)=150°C

T_A=25°C

10µs

100µs

R_DS(ON)

limited

0.1s

1ms

10ms

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

-V_DS(Volts)

Figure 25: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 24: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=62.5°C/W

0.1

P_D

T_on

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 26: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4616相关文章

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AO4616产品参数

型号:	AO4616
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	1.53
Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	8 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors
表面贴装：	YES
Base Number Matches：	1

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