AO4702芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO4702的概述

芯片AO4702的概述 AO4702是一款广泛应用于功率管理领域的双向功率MOSFET驱动器，常被用作电子开关，以实现高效的电源供应和能量转换。基于其优越的导通性能和快速切换能力，AO4702不仅适用于消费电子产品，还可以广泛应用于电机控制、LED驱动和其他相关设备。它的出色性能使得AO4702成为现代电力电子系统中不可或缺的组件。芯片AO4702的详细参数 AO4702的参数可以从几个关键方面进行分析，包括电气特性、热特性和机械特性等。其主要电气参数如下： 1. 工作电压范围: AO4702能够在广泛的电压范围内工作，通常为±20V。此范围使得其在多种应用场景中均可胜任，提升了其适用性。 2. 最大栅极电压: 栅极与源极之间的最大电压为±20V。这一特性确保了芯片在高频和高效率模式下的稳定性。 3. 导通电阻: 在VGS=10V时，通常导通电阻达到0.025Ω。低导通电阻可...

产品型号AO4702的Datasheet PDF文件预览

AO4702

N-Channel Enhancement Mode Field Effect Transistor with

Schottky Diode

General Description

Features

The AO4702 uses advanced trench technology to provide

V_DS(V) = 30V

excellent R_DS(ON)and low gate charge. A Schottky Diode is

I_D= 11A (V_GS= 10V)

packaged in parallel to improve device performance in

_DS(ON)< 16mΩ (V_GS= 10V)

_DS(ON)< 25mΩ (V_GS= 4.5V)

synchronous recitification applications, or H-bridge

configurations. Standard Product AO4702 is Pb-free

(meets ROHS & Sony 259 specifications). AO4702L is a

Green Product ordering option. AO4702and AO4702L are

electrically identical.

SCHOTTKY

VDS (V) = 30V, IF = 3A, VF<0.5V@1A

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

I_D

Continuous Drain Current ^A

Pulsed Drain Current ^B

9.3

I_DM

V_KA

Schottky reverse voltage

4.4

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current ^A

Pulsed Diode Forward Current ^B

3.2

T_A=25°C

T_A=70°C

P_D

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Alpha & Omega Semiconductor, Ltd.

AO4702

Thermal Characteristics: MOSFET

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Lead ^C

R_θJL

Thermal Characteristics: Schottky

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Lead ^C

R_θJL

A: The value of R _θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R _θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA

curve provides a single pulse rating.

F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,

capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.

Rev 5 : Aug 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4702

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_R=30V

0.007 0.05

Zero Gate Voltage Drain Current

(Set by Schottky leakage)

I_DSS

V_R=30V, T_J=125°C

V_R=30V, T_J=150°C

V_DS=0V, V_GS= ±20V

3.2

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

100

V_GS(th)

I_D(ON)

_DS=V_GSI_D=250µA

V_GS=4.5V, V_DS=5V

_GS=10V, I_D=11A

1.8

13.4

16.8

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=8A

_DS=5V, I_D=11A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode + Schottky Forward Voltage

0.45

0.5

Maximum Body-Diode + Schottky Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1040 1250

212

Ω

V_GS=0V, V_DS=15V, f=1MHz

Output Capacitance (FET+Schottky)

Reverse Transfer Capacitance

Gate resistance

121

V_GS=0V, V_DS=0V, f=1MHz

0.7

0.85

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

19.8

9.8

2.5

3.5

4.5

3.9

17.4

3.2

Q_g(4.5V)

V_GS=10V, V_DS=15V, I_D=11A

Q_gs

Q_gd

t_D(on)

t_r

V_GS=10V, V_DS=15V, R_L=1.35Ω,

t_D(off)

t_f

R_GEN=3Ω

5.7

t_rr

I_F=11A, dI/dt=100A/µs

Body Diode + Schottky Reverse Recovery Time

Body Diode + Schottky Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The value in any

given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R _θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA curve

provides a single pulse rating.

F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance

and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.

Rev 5: Aug 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

4.5V

V_DS=5V

3.5V

125°C

25°C

V_GS=3V

1.5

2.5

3.5

V_DS(Volts)

V_GS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

1.6

1.4

1.2

V_GS=10V

I_D=11A

_GS=4.5V

V_GS=4.5V

V_GS=10V

0.8

_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

125°C

I_D=11A

25°

125°C

25°C

0.0

0.2

0.4

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

V_DS=15V

I_D=11A

1250

1000

750

500

250

C_iss

C_rss

_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

T_J(Max)=150°C

T_A=25°C

R_DS(ON)

limited

100µs

10µs

1ms

10ms

0.1s

T_J(Max)=150°C

T_A=25°C

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=40°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P_D

0.1

T_on

Single Pulse

0.001

0.01

Pulse Width (s)

0.1

0.00001

0.0001

0.01

100

1000

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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AO4702产品参数

型号:	AO4702
生命周期：	Obsolete
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.81
Base Number Matches：	1

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