AO8830芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO8830的概述

芯片AO8830的概述 AO8830是一款高效率的N沟道增强型FET（场效应晶体管），广泛应用于电源管理、开关电源和其他功率转换应用。因其低导通电阻和较高的开关速度特性，该芯片能够有效降低功率损耗，从而提高整体系统的能效。AO8830具有良好的热稳定性，能够在各种工作条件下保持稳定的性能。芯片AO8830的详细参数 AO8830的技术参数包括但不限于以下几个方面： - 最大漏极源极电压（V_DS）：60V - 最大脉冲漏极电流（I_D）：85A - 最大持续漏极电流：25A - 导通电阻（R_DS(on)）：10mΩ（典型值，V_GS=10V） - 门源极阈值电压（V_GS(th)）：2V至4V - 工作温度范围：-55°C至+150°C - 储存温度范围：-55°C至+150°C - 封装类型：SO-8 上述参数显示了AO8830在电力电子领域应用的广泛性，尤其适合需要高效率和低功...

产品型号AO8830的Datasheet PDF文件预览

AO8830

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8830 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-

drain configuration. Standard Product AO8830 is Pb-

free (meets ROHS & Sony 259 specifications).

AO8830L is a Green Product ordering option.

AO8830 and AO8830L are electrically identical.

V_DS(V) = 20V

I_D= 6 A (V_GS= 10V)

R_DS(ON)< 27mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

R_DS(ON)< 41mΩ (V_GS= 2.5V)

R_DS(ON)< 55mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

1.6KΩ

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

4.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

0.94

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

115

140

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO8830

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_DS=16V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

T_J=55°C

µA

I_GSS

Gate-Body leakage current

Gate-Source Breakdown Voltage

Gate Threshold Voltage

_DS=0V, V_GS=±10V

_DS=0V, I_G=±250uA

_DS=V_GSI_D=1mA

BV_GSO

V_GS(th)

I_D(ON)

±12

0.5

0.6

On state drain current

V_GS=4.5V, V_DS=5V

_GS=10V, I_D=6A

mΩ

T_J=125°C

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=5A

V_GS=2.5V, I_D=4A

V_GS=1.8V, I_D=2A

V_DS=5V, I_D=6A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.75

Maximum Body-Diode Continuous Current

2.5

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

290

120

_GS=0V, V_DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

kΩ

V_GS=0V, V_DS=0V, f=1MHz

1.6

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

5.2

2.1

_GS=4.5V, V_DS=10V, I_D=6A

1.9

280

972

2.35

2.2

V_GS=4.5V, V_DS=10V, R_L=1.7Ω,

_GEN=3Ω

µs

t_D(off)

t_f

µs

t_rr

I_F=6A, dI/dt=100A/µs, V_GS=-9V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

value in any given application depends on the user's specific board design. The currentand power rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA

curve provides a single pulse rating.

Rev 2: Aug 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO8830

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_GS=5V

25°C

V_GS=2V

125°C

V_GS=1.5V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V_DS(Volts)

V_GS(Volts)

Figure 2: Transfer Characteristics

Figure 1: On-Regions Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

V_GS=4.5V

V_GS=2.5V

V_GS=1.8V

I_D=5A

I_D=4A

V_GS=2.5V

V_GS=10V

I_D=6A

V_GS=1.8V

I_D=2A

V_GS=10V

V_GS=4.5V

I_D(A)

-50

Temperature (°C)

100

150

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

Figure 4: On-Resistance vs. Junction

Temperature

1E+01

1E+00

1E-01

1E-02

1E-03

1E-04

1E-05

I_D=6A

125°C

25°C

0.0

0.2

0.4

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO8830

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

400

V_DS=10V

C_iss

I_D=6A

300

200

100

C_oss

C_rss

V_DS(Volts)

Qg (nC)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

100

T_J(Max)=150°C, T_A=25°C

T_J(Max)=150°C

T_A=25°C

10µs

1ms

10ms

100m

R_DS(ON)

limited

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=83°C/W

P_D

0.1

T_on

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO8830相关文章

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AO8830产品参数

型号:	AO8830
生命周期：	Obsolete
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	8.42

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