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AOC2422

8V N-Channel MOSFET

General Description

Product Summary

V_DS

8V

The AOC2422 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.2V while retaining a 5V

V_GS(MAX)rating.

I_D(at V_GS=2.5V)

R_DS(ON)(at V_GS=2.5V)

R_DS(ON)(at V_GS=1.8V)

R_DS(ON)(at V_GS=1.5V)

R_DS(ON)(at V_GS=1.2V)

3.5A

< 33mΩ

< 38mΩ

< 43mΩ

< 58mΩ

Typical ESD protection

HBM Class 2

D

MCSP 0.97x0.97A_4

Top View

Bottom View

Top View

Bottom View

3

4

2

1

S

G

Pin1(G)

G

D

S

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

Source Current (DC) ^Note1

Source Current (Pulse) ^Note2

Power Dissipation ^Note1

8

V

V_GS

±5

3.5

I_D

T_A=25°C

A

I_DM

35

0.6

P_D

W

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

110

160

Max

140

200

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

t

≤ 10s

R_θJA

Steady-State

Note 1. Mounted on minimum pad PCB

Note 2. PW <300 ꢀs pulses, duty cycle 0.5% max

Rev 0 : Nov. 2012

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Page 1 of 5

AOC2422

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

8

V

V_DS=8V, V_GS=0V

1

I_DSS

Zero Gate Voltage Drain Current

µA

5

T_J=55°C

V_DS=0V, V_GS=±5V

V_DS=V_GSI_D=250µA

V_GS=2.5V, I_D=1.5A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

±10

0.8

33

µA

V_GS(th)

0.2

0.52

27

V

mΩ

T_J=125°C

34

42

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=1.8V, I_D=1A

V_GS=1.5V, I_D=1A

30

38

mΩ

S

33

43

V_GS=1.2V, I_D=1A

41

58

V_DS=5V, I_D=1.5A

I_S=1A,V_GS=0V

g_FS

Forward Transconductance

Diode Forward Voltage

20

V_SD

0.6

1

V

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

870

250

155

2.7

pF

KΩ

V_GS=0V, V_DS=4V, f=1MHz

V_GS=0V, V_DS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

9.5

1.2

2

15

nC

µs

V_GS=4.5V, V_DS=4V, I_D=1.5A

1

V_GS=2.5V, V_DS=4V, R_L=2.67Ω,

R_GEN=3Ω

2.1

3

t_D(off)

t_f

4.2

t_rr

I_F=1.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

15

5

ns

Q_rr

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Nov. 2012

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Page 2 of 5

AOC2422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

20

15

10

5

20

15

10

5

4.5V

1.5V

V_DS=5V

2.5V

125°C

V_GS=1.0V

25°C

0

0.5

1

1.5

2

0

1

2

3

4

5

V_GS(Volts)

Figure 2: Transfer Characteristics

V_DS(Volts)

Fig 1: On-Region Characteristics

50

40

30

20

1.4

V_GS=2.5V

I_D=1.5A

V_GS=1.2V

V_GS=1.5V

V_GS=1.8V

I_D=1A

1.2

1

V_GS=1.5V

I_D=1A

V_GS=1.2V

I_D=1A

V_GS=2.5V

V_GS=1.8V

3

0.8

0

25

50

75

100

125

150

175

0

1

2

4

5

I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

60

50

40

30

20

10

0

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=1.5A

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.6

0.8

1.0

1.2

0

1

2

3

4

5

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 0: Nov. 2012

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Page 3 of 5

AOC2422

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5

4

3

2

1

0

1200

V_DS=4V

I_D=1.5A

1000

800

600

400

200

0

C_iss

C_oss

C_rss

0

2

4

6

8

10

12

0

2

4

6

8

V_DS(Volts)

Q_g(nC)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

50

100.0

10.0

1.0

T_J(Max)=150°C

T_A=25°C

10µs

100µs

40

30

20

10

0

R_DS(ON)

limited

1ms

10ms

10s

DC

0.1

T_J(Max)=150°C

T_A=25°C

0.0

0.00001

0.001

0.1

10

1000

0.01

0.1

1

10

100

Pulse Width (s)

-V_DS(Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area

Figure 10: Single Pulse Power Rating Junction-to-

Ambient

10

1

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=200°C/W

0.1

0.01

P_D

Single Pulse

0.001

T_on

T

0.001

0.00001

0.0001

0.01

0.1

Pulse Width (s)

1

10

100

1000

Figure 11: Normalized Maximum Transient Thermal Impedance

Rev 0: Nov. 2012

www.aosmd.com

Page 4 of 5

AOC2422

Rev 0: Nov. 2012

www.aosmd.com

Page 5 of 5

型号:	AOC2422
生命周期：	Obsolete
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.77
Base Number Matches：	1

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