AOD444芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AOD444的概述

芯片AOD444概述 AOD444是一款广泛应用于消费电子及工业设备中的功率MOSFET（金属氧化物半导体场效应晶体管）。作为具有高效能和可靠性的半导体元件，AOD444在电源转换、开关电源以及电机驱动等众多应用场景中均得以实现其独特的价值。该芯片的设计目标是满足高频率、高效率及低导通损耗的市场需求，特别适合于那些对功耗要求极为严格的设备。 AOD444的详细参数 AOD444的参数规格决定了其在不同电气环境下的适用性。以下是其主要技术参数： - 最大漏极电压 (V_DS): 40V - 最大漏极电流 (I_D): 40A（在Tj=25°C时） - 栅极阈值电压 (V_GS(th)): 2.0V - 4.0V - 导通电阻 (R_DS(on)): 0.022Ω（在V_GS=10V时） - 电流增益 (g_fs): 16S（最小值，典型值） - 结温范围 (T_j): -55°C至+15...

产品型号AOD444的Datasheet PDF文件预览

AOD444/AOI444

60V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOD444/AOI444 combine advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). Those devices are suitable for use

in PWM, load switching and general purpose applications.

60V

12A

I_D(at V_GS=10V)

< 60mΩ

< 85mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

TO252

DPAK

TO-251A

IPAK

TopView

Bottom View

TopView

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

7.5

Rev 0: Aug 2009

www.aosmd.com

Page 1 of 6

AOD444/AOI444

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

V_DS=48V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS= ±20V

V_DS=V_GSI_D=250µA

V_GS=10V, V_DS=5V

100

V_GS(th)

I_D(ON)

2.4

V_GS=10V, I_D=12A

100

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

_GS=4.5V, I_D=6A

_DS=5V, I_D=20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

0.74

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

360

450

540

Ω

_GS=0V, V_DS=30V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

0.6

1.4

2.0

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

7.5

3.8

1.2

1.9

4.2

3.4

Q_g(4.5V)

_GS=10V, V_DS=30V, I_D=12A

Q_gs

Q_gd

t_D(on)

t_r

V_GS=10V, V_DS=30V, R_L=2.5Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=12A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A. The value of R_θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The Power

dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the

user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T _J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial

T_J=25°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R _θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T _J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0 : Aug 2009

www.aosmd.com

Page 2 of 6

AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V_DS=5V

10V

4.5V

25°C

125°C

V_GS=3.5V

V_GS(Volts)

V_DS(Volts)

Figure 2: Transfer Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

100

2.4

2.2

V_GS=10V

I_D=12A

V_GS=4.5V

1.8

1.6

1.4

1.2

V_GS=4.5V

I_D=6A

V_GS=10V

0.8

100 125 150 175 200

_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

130

110

1.0E+01

I_D=12A

1.0E+00

125°C

1.0E-01

125°C

1.0E-02

1.0E-03

1.0E-04

1.0E-05

25°C

0.0

0.2

0.4

0.6

_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

0.8

1.0

1.2

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 0: Aug 2009

www.aosmd.com

Page 3 of 6

AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

700

600

500

400

300

200

100

V_DS=30V

I_D=12A

C_iss

C_oss

C_rss

V_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

200

160

120

100.0

10.0

1.0

10µs

T_J(Max)=175°C

T_C=25°C

100µs

1ms

10ms

R_DS(ON)

limited

T_J(Max)=175°C

T_C=25°C

0.1

0.0

0.01

0.1

100

0.0001

0.001

0.01

0.1

V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=7.5°C/W

0.1

P_D

T_on

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

0.1

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: Aug 2009

www.aosmd.com

Page 4 of 6

AOD444/AOI444

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

T_A=25°C

T_A=100°C

T_A=150°C

T_A=125°C

100

125

150

175

Time in avalanche, t_A(µs)

100

T_CASE(°C)

Figure 13: Power De-rating (Note F)

Figure 12: Single Pulse Avalanche capability (Note

10000

1000

100

T_A=25°C

0.00001

0.001

0.1

1000

100

125

150

175

T_CASE(°C)

Pulse Width (s)

Figure 14: Current De-rating (Note F)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=60°C/W

0.1

P_D

0.01

0.001

Single Pulse

T_on

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: Aug 2009

www.aosmd.com

Page 5 of 6

AOD444/AOI444

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q _rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 0: Aug 2009

www.aosmd.com

Page 6 of 6

AOD444相关文章

配单直通车

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AOD444产品参数

型号:	AOD444
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	TO-252
包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	1.68
Is Samacsys：	N
雪崩能效等级（Eas）：	18 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.06 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	30 A
表面贴装：	YES
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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