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产品型号AP4501SD的Datasheet PDF文件预览

AP4501SD  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D2  
Simple Drive Requirement  
N-CH BVDSS  
30V  
27mΩ  
7A  
D2  
D1  
Low On-resistance  
Fast Switching  
D1  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
-30V  
49mΩ  
-5A  
S2  
PDIP-8  
G1  
S1  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
30  
±20  
7
-30  
±20  
-5  
V
V
ID@TA=25  
ID@TA=70℃  
IDM  
A
A
5.8  
40  
-4.2  
-30  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200221031  
AP4501SD  
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=7A  
VGS=4.5V, ID=5A  
0.03  
V/℃  
RDS(ON)  
-
-
-
27 mΩ  
50 mΩ  
-
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=7A  
1
-
-
3
-
V
Forward Transconductance  
12  
S
IDSS  
Drain-Source Leakage Current (T=25oC)  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
ID=7A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
j
Drain-Source Leakage Current (T=150oC)  
25  
j
IGSS  
Qg  
±100  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
8.4  
2.1  
4.7  
6
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
VDS=15V  
ID=1A  
5.2  
18.8  
4.4  
645  
150  
95  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
A
V
IS  
Continuous Source Current ( Body Diode )  
VD=VG=0V , VS=1.2V  
-
-
-
-
1.7  
1.2  
VSD  
Forward On Voltage2  
Tj=25, IS=1.7A, VGS=0V  
AP4501SD  
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
BVDSS  
Drain-Source Breakdown Voltage  
VGS=0V, ID=-250uA  
-30  
-
-
-0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A  
V/℃  
RDS(ON)  
-
49 mΩ  
75 mΩ  
VGS=-4.5V, ID=-3A  
-
-
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-5.3A  
VDS=-30V, VGS=0V  
VDS=-24V, VGS=0V  
VGS= ± 20V  
-1  
-
-
-3  
V
Forward Transconductance  
Drain-Source Leakage Current ( T=25oC)  
8
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
-
-1  
j
Drain-Source Leakage Current ( T=150oC)  
-
-
-25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
ID=-5.3A  
-
9
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-15V  
-
3.5  
2
VGS=-4.5V  
-
VDS=-15V  
-
12  
20  
45  
27  
760  
330  
90  
ID=-1A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=6Ω,VGS=-10V  
RD=15Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
-
VDS=-25V  
-
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
VD=VG=0V , VS=-1.2V  
Tj=25, IS=-1.7A, VGS=0V  
Min. Typ. Max. Units  
A
V
IS  
Continuous Source Current ( Body Diode )  
-
-
-
-
-1.7  
-1.2  
VSD  
Forward On Voltage2  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad.  
AP4501SD  
N-Channel  
40  
30  
20  
10  
0
36  
24  
12  
0
10V  
8.0V  
6.0V  
10V  
8.0V  
6.0V  
5.0V  
5.0V  
V
GS =4.0V  
V
GS =4. 0 V  
T C=150 o  
C
T C =25 o C  
0
2
3
5
0
1
2
3
4
VDS , Drain-to-Source Voltage (V)  
VDS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2
1.4  
0.8  
0.2  
100  
I D=7.0A  
I D=7.0A  
VGS = 10V  
T
C=25  
70  
40  
10  
Ω
Ω
Ω
Ω
2
5
8
11  
-50  
0
50  
100  
150  
T j , Junction Temperature (oC)  
VGS (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
AP4501SD  
N-Channel  
2.4  
1.8  
1.2  
0.6  
0
8
6
4
2
0
0
50  
100  
150  
25  
50  
75  
100  
125  
150  
T c ,Case Temperature ( oC)  
T c , Case Temperature ( oC)  
Fig 5. Maximum Drain Current v.s.  
Case Temperature  
Fig 6. Typical Power Dissipation  
100  
1
Duty Factor = 0.5  
0.2  
100us  
1ms  
0.1  
10  
0.05  
0.1  
0.02  
0.01  
10ms  
100ms  
1s  
1
PDM  
0.01  
Single Pulse  
t
T
0.1  
T C=25 oC  
10s  
DC  
Duty Factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja=90oC/W  
Single Pulse  
0.01  
0.001  
0.0001  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
VDS (V)  
t , Pulse Width (s)  
Fig 7. Maximum Safe Operating Area  
Fig 8. Effective Transient Thermal Impedance  
AP4501SD  
N-Channel  
f=1.0MHz  
12  
10000  
1000  
100  
I D=7.0A  
9
6
3
0
V
DS = 1 6 V  
DS =20V  
DS =24V  
Ciss  
V
V
Coss  
Crss  
10  
0
4
8
12  
16  
1
7
13  
19  
25  
31  
VDS (V)  
Q G , Total Gate Charge (nC)  
Fig 9. Gate Charge Characteristics  
Fig 10. Typical Capacitance Characteristics  
100  
3
2.5  
2
10  
T C = 150 o C  
T C =25 o C  
1.5  
1
1
0.1  
0.5  
0
0.01  
-50  
0
50  
100  
150  
0
0.4  
0.8  
1.2  
T j , Junction Temperature ( oC )  
VSD (V)  
Fig 11. Forward Characteristic of  
Reverse Diode  
Fig 12. Gate Threshold Voltage v.s.  
Junction Temperature  
AP4501SD  
N-Channel  
VDS  
RD  
90%  
VDS  
TO THE  
OSCILLOSCOPE  
D
S
0.5 x RATED VDS  
RG  
G
10%  
VGS  
+
-
VGS  
10V  
td(off)  
td(on) tr  
tf  
Fig 13. Switching Time Circuit  
Fig 14. Switching Time Waveform  
VG  
VDS  
QG  
TO THE  
OSCILLOSCOPE  
D
S
4.5V  
0.8 x RATED VDS  
QGD  
QGS  
G
VGS  
+
1~ 3 mA  
-
I
I
D
G
Q
Charge  
Fig 15. Gate Charge Circuit  
Fig 16. Gate Charge Waveform  
AP4501SD  
P-Channel  
36  
24  
12  
0
40  
30  
20  
10  
0
-10V  
-8.0V  
-10V  
-8.0V  
-6.0V  
-5.0V  
-6.0V  
-5.0V  
V GS = - 4. 0 V  
V
GS = - 4. 0 V  
T C =150 o C  
T C =25 o C  
0
1
2
3
4
5
0
1
2
3
4
-VDS , Drain-to-Source Voltage (V)  
-VDS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
120  
1.8  
1.6  
1.4  
1.2  
1
I D =-5.0A  
I D =-5.0A  
T C =25  
V GS = -10V  
90  
Ω
Ω
Ω
Ω
60  
0.8  
0.6  
30  
-50  
0
50  
100  
150  
3
5
7
9
11  
T j , Junction Temperature ( o C)  
-VGS (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
AP4501SD  
P-Channel  
6
5
4
3
2
1
2.4  
1.8  
1.2  
0.6  
0
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
T c , Case Temperature ( o C)  
T c ,Case Temperature ( o C)  
Fig 5. Maximum Drain Current v.s.  
Case Temperature  
Fig 6. Typical Power Dissipation  
1
100  
Duty Factor = 0.5  
0.2  
100us  
0.1  
10  
0.05  
0.1  
1ms  
0.02  
10ms  
100ms  
1s  
1
0.01  
PDM  
Single Pulse  
t
0.01  
T
0.1  
10s  
Duty Factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja=90oC/W  
T C =25 o C  
DC  
Single Pulse  
0.01  
0.001  
0.0001  
0.1  
1
10  
100  
0.001  
0.01  
10  
100  
1000  
t , Puls0e.1Width 1(s)  
-VDS (V)  
Fig 7. Maximum Safe Operating Area  
Fig 8. Effective Transient Thermal Impedance  
AP4501SD  
P-Channel  
f=1.0MHz  
14  
10000  
1000  
100  
I D =-5.0A  
12  
10  
V DS =-10V  
Ciss  
V
DS =-15V  
8
6
4
2
0
V DS =-20V  
Coss  
Crss  
10  
0
5
10  
15  
20  
25  
30  
1
5
9
13  
17  
21  
25  
29  
-VDS (V)  
Q G , Total Gate Charge (nC)  
Fig 9. Gate Charge Characteristics  
Fig 10. Typical Capacitance Characteristics  
100  
3
2.5  
2
10  
T j =150 o C  
T j =25 o C  
1
1.5  
1
0.1  
0.5  
0
0.01  
0.1  
0.4  
0.7  
1
1.3  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
-V SD (V)  
Fig 11. Forward Characteristic of  
Reverse Diode  
Fig 12. Gate Threshold Voltage v.s.  
Junction Temperature  
AP4501SD  
P-Channel  
VDS  
RD  
90%  
VDS  
TO THE  
OSCILLOSCOPE  
D
S
0.5 x RATED VDS  
RG  
G
10%  
VGS  
-10 V  
VGS  
td(off)  
td(on) tr  
tf  
Fig 13. Switching Time Circuit  
Fig 14. Switching Time Waveform  
VG  
VDS  
QG  
TO THE  
OSCILLOSCOPE  
D
S
-4.5V  
0.5 x RATED VDS  
QGD  
QGS  
G
VGS  
-1~-3mA  
I
ID  
G
Q
Charge  
Fig 15. Gate Charge Circuit  
Fig 16. Gate Charge Waveform  
配单直通车
AP4502AGM-HF产品参数
型号:AP4502AGM-HF
生命周期:Contact Manufacturer
零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8
Reach Compliance Code:compliant
HTS代码:8541.29.00.75
风险等级:5.68
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V
最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8
元件数量:2
端子数量:8
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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