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产品型号APM9945K的Datasheet PDF文件预览

APM9945K  
Dual N-Channel Enhancement Mode MOSFET  
Pin Description  
Features  
60V/3A,  
D1  
D1  
D2  
RDS(ON) =100m(typ.) @ VGS = 10V  
RDS(ON) =120m(typ.) @ VGS = 4.5V  
D2  
S1  
G1  
Super High Dense Cell Design  
Reliable and Rugged  
S2  
G2  
Lead Free Available (RoHS Compliant)  
SOP 8  
(7) (8)  
D1 D1  
(5) (6)  
D2 D2  
Applications  
Power Management in Desktop or DC/DC  
Converters  
(2)  
G1  
(4)  
G2  
S1  
(1)  
S2  
(3)  
N-Channel MOSFET  
Ordering and Marking Information  
Package Code  
K : SOP-8  
APM9945  
Lead Free Code  
Operating Junction Temp. Range  
C : -55 to 150°C  
Handling Code  
Temp. Range  
Package Code  
Handling Code  
TU : Tube  
TR : Tape & Reel  
Lead Free Code  
L : Lead Free Device Blank : Original Device  
XXXXX - Date Code  
APM9945  
XXXXX  
APM9945 K :  
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-  
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.  
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-  
tion at lead-free peak reflow temperature.  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright  
ANPEC Electronics Corp.  
1
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Symbol  
VDSS  
VGSS  
ID*  
Parameter  
Rating  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
3
Continuous Drain Current  
A
A
VGS=10V  
IDM  
*
20  
Pulsed Drain Current  
IS*  
TJ  
Diode Continuous Forward Current  
3
150  
Maximum Junction Temperature  
Storage Temperature Range  
°C  
TSTG  
-55 to 150  
TA=25°C  
2
W
PD*  
Power Dissipation for Single Operation  
Thermal Resistance-Junction to Ambient  
TA=100°C  
0.8  
RθJA  
*
°C/W  
62.5  
Note:  
*Surface Mounted on 1in2 pad area, t 10sec.  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
APM9945K  
Symbol  
Parameter  
Test Condition  
Unit  
Min. Typ. Max.  
Static Characteristics  
BVDSS Drain-Source Breakdown Voltage  
IDSS Zero Gate Voltage Drain Current  
VGS(th) Gate Threshold Voltage  
IGSS Gate Leakage Current  
60  
V
µA  
V
VGS=0V, IDS=250µA  
VDS=48V, VGS=0V  
VDS=VGS, IDS=250µA  
VGS=±20V, VDS=0V  
VGS=10V, IDS=3A  
VGS=4.5V, IDS=2A  
ISD=3A, VGS=0V  
1
1
2
3
±100  
135  
160  
1.3  
nA  
100  
120  
0.8  
a
RDS(ON) Drain-Source On-state Resistance  
mΩ  
a
VSD  
Diode Forward Voltage  
V
Dynamic Characteristics b  
RG  
Ciss  
Coss  
Crss  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
3.4  
390  
75  
20  
8
Input Capacitance  
VGS=0V,  
VDS=25V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
td(ON) Turn-on Delay Time  
Tr Turn-on Rise Time  
td(OFF) Turn-off Delay Time  
18  
20  
40  
20  
VDD=15V, RL=10,  
IDS=1A, VGEN=10V,  
RG=6Ω  
9
ns  
20  
8
Tf  
Turn-off Fall Time  
Copyright  
ANPEC Electronics Corp.  
2
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)  
APM9945K  
Symbol  
Parameter  
Test Condition  
Unit  
Min. Typ. Max.  
Gate Charge Characteristics b  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
20  
5
26  
VDS=15V, VGS=10V,  
IDS=3A  
nC  
5
Notes:  
a : Pulse test ; pulse width 300µs, duty cycle 2%.  
b : Guaranteed by design, not subject to production testing.  
Copyright  
ANPEC Electronics Corp.  
3
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Typical Characteristics  
Power Dissipation  
Drain Current  
2.5  
4
3
2
1
0
2.0  
1.5  
1.0  
0.5  
0.0  
0
20 40 60 80 100 120 140 160  
0
20 40 60 80 100 120 140 160  
Tj - Junction Temperature (°C)  
Tj - Junction Temperature (°C)  
Safe Operation Area  
Thermal Transient Impedance  
50  
10  
2
1
Duty = 0.5  
0.2  
300µs  
0.1  
1ms  
0.1  
0.01  
1E-3  
0.05  
1
0.1  
10ms  
0.02  
0.01  
100ms  
1s  
Single Pulse  
DC  
Mounted on 1in2 pad  
TA=25oC  
R
θJA : 62.5 oC/W  
0.01  
0.01  
0.1  
1
10  
100  
1E-4 1E-3 0.01  
0.1  
1 10 30  
VDS - Drain - Source Voltage (V)  
Square Wave Pulse Duration (sec)  
Copyright  
ANPEC Electronics Corp.  
4
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Typical Characteristics (Cont.)  
Output Characteristics  
Drain-Source On Resistance  
20  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
VGS= 6,7,8,9,10V  
18  
5V  
16  
14  
12  
10  
VGS=4.5V  
VGS=10V  
8
6
4
2
0
4V  
3V  
0
2
4
6
8
10  
0
2
4
6
8
10  
VDS - Drain-Source Voltage (V)  
ID - Drain Current (A)  
Transfer Characteristics  
Gate Threshold Voltage  
20  
18  
16  
14  
12  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
IDS =250µA  
Tj=125oC  
6
Tj=-55oC  
Tj=25oC  
4
2
0
0
1
2
3
4
5
6
7
-50 -25  
0
25 50 75 100 125 150  
VGS - Gate - Source Voltage (V)  
Tj - Junction Temperature (°C)  
Copyright  
ANPEC Electronics Corp.  
5
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Typical Characteristics (Cont.)  
Drain-Source On Resistance  
Source-Drain Diode Forward  
2.0  
20  
10  
VGS = 10V  
1.8 IDS = 3A  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
Tj=150oC  
Tj=25oC  
1
RON@Tj=25oC: 100mΩ  
0.2  
-50 -25  
0.1  
0.0  
0
25 50 75 100 125 150  
0.4  
0.8  
1.2  
1.6  
Tj - Junction Temperature (°C)  
VSD - Source - Drain Voltage (V)  
Capacitance  
Gate Charge  
600  
500  
400  
300  
200  
100  
0
10  
8
Frequency=1MHz  
VDS= 15 V  
ID = 3A  
Ciss  
6
4
2
Coss  
Crss  
15  
0
0
5
10  
20  
25  
30  
0
5
10  
15  
20  
25  
QG - Gate Charge (nC)  
VDS - Drain - Source Voltage (V)  
Copyright  
ANPEC Electronics Corp.  
6
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Packaging Information  
SOP-8 pin ( Reference JEDEC Registration MS-012)  
E
H
e1  
e2  
D
A1  
A
1
L
0.004max.  
Millimeters  
Inches  
Dim  
Min.  
Max.  
Min.  
Max.  
0.069  
0.010  
0.197  
0.157  
0.244  
0.050  
0.020  
A
A1  
D
1.35  
0.10  
4.80  
3.80  
5.80  
0.40  
0.33  
1.75  
0.25  
5.00  
4.00  
6.20  
1.27  
0.51  
0.053  
0.004  
0.189  
0.150  
0.228  
0.016  
0.013  
E
H
L
e1  
e2  
1.27BSC  
0.50BSC  
1
8
8
°
φ
°
Copyright  
ANPEC Electronics Corp.  
7
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Physical Specifications  
Terminal Material  
Lead Solderability  
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn  
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.  
Reflow Condition (IR/Convection or VPR Reflow)  
tp  
TP  
Critical Zone  
TL to TP  
Ramp-up  
TL  
tL  
Tsmax  
Tsmin  
Ramp-down  
ts  
Preheat  
25  
°
t 25 C to Peak  
Tim e  
Classificatin Reflow Profiles  
Sn-Pb Eutectic Assembly  
Large Body Small Body  
Pb-Free Assembly  
Profile Feature  
Large Body  
Small Body  
Average ramp-up rate  
(TL to TP)  
3°C/second max.  
3°C/second max.  
Preheat  
- Temperature Min (Tsmin)  
- Temperature Mix (Tsmax)  
- Time (min to max)(ts)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Tsmax to TL  
3°C/second max  
- Ramp-up Rate  
Tsmax to TL  
- Temperature(TL)  
- Time (tL)  
183°C  
60-150 seconds  
217°C  
60-150 seconds  
Peak Temperature(Tp)  
225 +0/-5°C  
240 +0/-5°C  
245 +0/-5°C  
250 +0/-5°C  
Time within 5°C of actual Peak  
Temperature(tp)  
10-30 seconds  
10-30 seconds  
10-30 seconds 20-40 seconds  
Ramp-down Rate  
Time 25°C to Peak Temperature  
6°C/second max.  
6 minutes max.  
6°C/second max.  
8 minutes max.  
Note: All temperatures refer to topside of the package. Measured on the body surface.  
Copyright  
ANPEC Electronics Corp.  
8
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Reliability Test Program  
Test item  
SOLDERABILITY  
Method  
Description  
245°C,5 SEC  
1000 Hrs Bias @ 125°C  
168 Hrs, 100% RH, 121°C  
-65°C ~ 150°C, 200 Cycles  
MIL-STD-883D-2003  
MIL-STD 883D-1005.7  
JESD-22-B, A102  
HOLT  
PCT  
TST  
MIL-STD 883D-1011.9  
Carrier Tape & Reel Dimensions  
t
D
P
Po  
E
P1  
Bo  
F
W
Ao  
D1  
Ko  
T2  
J
C
A
B
T1  
A
B
C
J
T1  
T2  
W
12 + 0.3  
- 0.1  
P
E
Application  
SOP-8  
12.75 +  
0.1 5  
2 + 0.5 12.4 +0.2  
330 1  
62 1.5  
2 0.2  
±
8 0.1 1.75 0.1  
±
±
±
±
F
D
D1  
Po  
P1  
Ao  
Bo  
Ko  
t
1.55+ 0.25  
5.5 0.1 1.55 0.1  
4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013  
± ± ± ± ± ±  
±
±
(mm)  
Copyright  
ANPEC Electronics Corp.  
9
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
APM9945K  
Cover Tape Dimensions  
Application  
SOP- 8  
Carrier Width  
Cover Tape Width  
Devices Per Reel  
12  
9.3  
2500  
Customer Service  
Anpec Electronics Corp.  
Head Office :  
5F, No. 2 Li-Hsin Road, SBIP,  
Hsin-Chu, Taiwan, R.O.C.  
Tel : 886-3-5642000  
Fax : 886-3-5642050  
Taipei Branch :  
7F, No. 137, Lane 235, Pac Chiao Rd.,  
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.  
Tel : 886-2-89191368  
Fax : 886-2-89191369  
Copyright  
ANPEC Electronics Corp.  
10  
www.anpec.com.tw  
Rev. B.2 - Mar., 2005  
配单直通车
APM9936KC-TRG产品参数
型号:APM9936KC-TRG
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Contact Manufacturer
IHS 制造商:ANPEC ELECTRONICS CORP
零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8
Reach Compliance Code:compliant
风险等级:5.76
配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:20 V
最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8
JESD-609代码:e3
元件数量:2
端子数量:8
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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