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产品型号APT2X61D30J的概述

芯片APT2X61D30J的概述 APT2X61D30J是一款由国际知名半导体制造商生产的功率MOSFET（金属氧化物半导体场效应晶体管）。该芯片因其优异的性能和多样的应用场景而备受青睐。APT2X61D30J广泛应用于电源管理、芯片驱动、逆变器等多个领域，并具备较高的开关频率、较低的导通电阻及较好的热稳定性等特点。在当今电子设备不断发展的背景下，功率MOSFET成为了各种电源转换及控制电路中的核心组件。APT2X61D30J的设计旨在平衡高效能和成本效益，使其适用于消费电子、工业设备以及汽车电子等众多应用领域。芯片APT2X61D30J的详细参数 APT2X61D30J的关键参数包括： 1. 最大漏电压（V_DS）：60V 2. 最大栅极电压（V_GS）：±20V 3. 连续漏极电流（I_D）：30A 4. 脉冲漏极电流：最大可达100A 5. 导通电阻（R_DS(on)）：典型...

产品型号APT2X61D30J的Datasheet PDF文件预览

SOT-227

Anti-Parallel

APT2X60D30J

Parallel

APT2X61D30J

APT2X60D30J 300V 60A

APT2X61D30J 300V 60A

DUAL DIE ISOTOP^®PACKAGE

ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES

PRODUCT APPLICATIONS

PRODUCT FEATURES

PRODUCT BENEFITS

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Ultrafast Recovery Times

• Low Losses

• Soft Recovery Characteristics

• Popular SOT-227 Package

• Low Forward Voltage

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Uninterruptible Power Supply (UPS)

• Induction Heating

• High Speed Rectifiers

• High Blocking Voltage

• Low Leakage Current

• Increased System Power

Density

MAXIMUM RATINGS

All Ratings are per diode: T = 25°C unless otherwise specified.

Characteristic / Test Conditions

APT2X60/2X61D30J

Symbol

V_R

UNIT

Maximum D.C. Reverse Voltage

V_RRM

V_RWM

I_F(AV)

I_F(RMS)

I_FSM

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (T_C= 90°C, Duty Cycle = 0.5)

RMS Forward Current

300

Volts

100

Amps

°C

Non-Repetitive Forward Surge Current (T_J= 45°C, 8.3ms)

Operating and StorageTemperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

600

T_J,T_STG

T_L

-55 to 150

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I_F= 60A

1.4

V_F

Maximum Forward Voltage

I_F= 120A

1.4

Volts

I_F= 60A, T_J= 150°C

V_R= V_RRated

V_R= V_RRated, T_J= 125°C

1.2

250

500

Maximum Reverse Leakage Current

Junction Capacitance, V_R= 200V

I_RM

µA

C_T

L_S

140

Series Inductance (Lead to Lead 5mm from Base)

APT Website - http://www.advancedpower.com

USA

EUROPE

405 S.W. Columbia Street

Chemin de Magret

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

APT2X60/2X61D30J

DYNAMIC CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

UNIT

t_rr1

t_rr2

Reverse Recovery Time, I_F= 1.0A, di_F/dt = -15A/µs, V_R= 30V, T_J= 25°C

TBD

Reverse Recovery Time

T_J= 25°C

T_J= 100°C

T_J= 25°C

T_J= 100°C

T_J= 25°C

T_J= 100°C

T_J= 25°C

T_J= 100°C

T_J= 25°C

T_J= 100°C

T_J= 25°C

T_J= 100°C

t_rr3

I_F= 60A, di_F/dt = -480A/µs, V_R= 180V

Forward Recovery Time

t_fr1

182

t_fr2

I_F= 60A, di_F/dt = 480A/µs, V_R= 180V

Reverse Recovery Current

I_RRM1

I_RRM2

Q_rr1

Q_rr2

V_fr1

V_fr2

Amps

I_F= 60A, di_F/dt = -480A/µs, V_R= 180V

Recovery Charge

315

750

7.5

690

845

I_F= 60A, di_F/dt = -480A/µs, V_R= 180V

Forward Recovery Voltage

Volts

A/µs

I_F= 60A, di_F/dt = 480A/µs, V_R= 180V

Rate of Fall of Recovery Current

I_F= 60A, di_F/dt = -480A/µs, V_R= 180V

diM/dt

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

0.66

UNIT

R_qJC

R_qJA

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

°C/W

V_Isolation

RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500

Volts

1.03

29.2

W_T

Package Weight

13.6

1.5

lb•in

N•m

Torque

Maximum Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOT-227 Package Outline

11.8 (.463)

12.2 (.480)

31.5 (1.240)

31.7 (1.248)

8.9 (.350)

9.6 (.378)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

7.8 (.307)

8.2 (.322)

Hex Nut M4 H100

(4 places)

25.2 (0.992)

25.4 (1.000)

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

0.75 (.030) 12.6 (.496)

0.85 (.033) 12.8 (.504)

3.3 (.129)

3.6 (.143)

1.95 (.077)

2.14 (.084)

14.9 (.587)

Anti-parallel

APT2X60D30J

Parallel

APT2X61D30J

Cathode 1 Cathode 1

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

Anode 2

Anode 1

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

Anode 2

Cathode 2

Anode 1 Cathode 2

APT's devices are covered by one or more of the following U.S.patents:

ISOTOP^®is a Registered Trademark of SGS Thomson.

4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

型号:	APT2X61D30J
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	ADVANCED POWER TECHNOLOGY INC
包装说明：	R-PUFM-X4
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.76
Is Samacsys：	N
其他特性：	FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE, UL RECOGNIZED
应用：	ULTRA FAST SOFT RECOVERY
外壳连接：	ISOLATED
配置：	SEPARATE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V
JESD-30 代码：	R-PUFM-X4
最大非重复峰值正向电流：	600 A
元件数量：	2
相数：	1
端子数量：	4
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	60 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	300 V
最大反向电流：	500 µA
最大反向恢复时间：	0.038 µs
反向测试电压：	300 V
子类别：	Other Diodes
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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