Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32011
AT-32033
Features
Description
Optimized performance at 2.7 V
makes these devices ideal for use
in900MHz, 1.8GHz, and2.4GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011:1 dBNF,14dBGA
AT-32033:1dBNF,12.5dBGA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
Hewlett Packard’s AT-32011 and
AT-32033arehighperformance
NPN bipolar transistors that have
been optimized for maximum ft at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-32033 uses the
3 leadSOT-23,whiletheAT-320 11
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
• Tape-And-Reel Packaging
Option Available[1]
applications. Voltage breakdowns
are high enough for use at 5 volts.
techniques.
Outline Drawing
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett Packard’s
10 GHz ft,30GHzfMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitterfingerinterdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
EMITTER COLLECTOR
320
BASE
EMITTER
SOT-143 (AT-32011)
COLLECTOR
320
BASE
EMITTER
SOT-23 (AT-32033)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
5965-8920E
4-53