BAT854SW各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号BAT854SW的概述

芯片BAT854SW概述 BAT854SW是一种常见的双向MOSFET二极管，广泛应用于电子电路设计中。作为一种专门用于电源管理和负载开关的半导体设备，BAT854SW拥有低导通电阻和良好的反向恢复特性，使其成为现代电子产品中不可或缺的组件。该芯片通常用于电源电路、信号开关以及各种低压应用中，以提高电路的效率和可靠性。芯片BAT854SW的详细参数芯片BAT854SW的主要参数包括： 1. 工作电压（V_R）：最高为30V，适合多种电源电压情况。 2. 导通电阻（R_DS(on)）：在4.5V的栅极驱动下，导通电阻约为0.25Ω，在较低电压下仍然保持良好的性能。 3. 正向电流（I_F）：最大工作电流可达到600mA，适合大多数应用需求。 4. 反向电流（I_R）：反向电流容量为300mA，适用于双向电流的场合。 5. 封装形式： BAT854SW通常以SOT-23封装形式...

产品型号BAT854SW的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

halfpage

M3D102

BAT854W series

Schottky barrier (double) diodes

Product speciﬁcation

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

FEATURES

PINNING

• Very low forward voltage

• Very low reverse current

• Guard ring protected

SYMBOL

BAT854W

n.c.

• Very small SMD plastic package.

MLC357

n.c.

Fig.2 BAT854W single diode

configuration (symbol).

APPLICATIONS

BAT854AW

• Ultra high-speed switching

• Voltage clamping

k₁

k₂

• Protection circuits

• Blocking diodes

a₁,a₂

BAT854CW

• Low power consumption

applications (e.g. hand-held

applications).

a₁

a₂

MLC360

k₁, k₂

Fig.3 BAT854AW diode

configuration (symbol).

BAT854SW

DESCRIPTION

a₁

Planar Schottky barrier diodes

encapsulated in a SOT323 very small

SMD plastic package. Single diodes

and double diodes with different

pinning are available.

k₂

k₁, a₂

MARKING

MLC359

MARKING

TYPE NUMBER

handbook, 2 columns

CODE

Fig.4 BAT854CW diode

configuration (symbol).

BAT854W

BAT854AW

BAT854CW

BAT854SW

MBC870

Top view

MLC358

Fig.1 Simplified outline

SOT323 and pin

Fig.5 BAT854SW diode

configuration (symbol).

configuration.

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_R

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

I_F

200

300

I_FRM

I_FSM

t_p≤ 1 s; δ ≤ 0.5

non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method

T_stg

T_j

storage temperature

−65

−

+150

150

°C

junction temperature

T_amb

operating ambient temperature

−65

+150

ELECTRICAL CHARACTERISTICS

_amb= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

V_F

continuous forward voltage

see Fig.6

I_F= 0.1 mA

200

260

340

−

µA

I_F= 1 mA

−

I_F= 10 mA

−

I_F= 30 mA

420

550

0.5

I_F= 100 mA

−

I_R

continuous reverse current

diode capacitance

V_R= 25 V; note 1; see Fig.7

V_R= 1 V; f = 1 MHz; see Fig.8

−

C_d

−

Note

1. Pulse test: t_p= 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient note 1

625

K/W

Note

1. Refer to SOT323 standard mounting conditions.

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

GRAPHICAL DATA

MLD547

MLD546

handbook, halfpage

(1)

(2)

(mA)

(µA)

(1)

(2) (3)

(3)

−1

0.4

0.8

1.2

(V)

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3) T_amb= 25 °C.

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3) T_amb= 25 °C.

Fig.6 Forward current as a function of forward

voltage; typical values.

Fig.7 Reverse current as a function of reverse

voltage; typical values.

MLD548

handbook, halfpage

(pF)

(V)

f = 1 MHz; T_amb= 25 °C.

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT323

v M

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

max

UNIT

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.23

0.13

0.1

1.3

0.65

0.2

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT323

SC-70

97-02-28

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

STATUS

DEFINITIONS ⁽¹⁾

Objective speciﬁcation

Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation

This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation

Production

This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT854W series

NOTES

2001 Feb 27

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Pakistan: see Singapore

Belgium: see The Netherlands

Brazil: see South America

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,

Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Colombia: see South America

Czech Republic: see Austria

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,

Tel. +27 11 471 5401, Fax. +27 11 471 5398

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,

Tel: +36 1 382 1700, Fax: +36 1 382 1800

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,

Tel. +66 2 361 7910, Fax. +66 2 398 3447

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

Tel. +39 039 203 6838, Fax +39 039 203 6800

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 3341 299, Fax.+381 11 3342 553

Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,

The Netherlands, Fax. +31 40 27 24825

Internet: http://www.semiconductors.philips.com

SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613514/01/pp8

Date of release: 2001 Feb 27

Document order number: 9397 750 07935

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BAT854SW产品参数

型号:	BAT854SW
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	SC-70
包装说明：	PLASTIC, SC-70, 3 PIN
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.70
风险等级：	5.26
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.42 V
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	1 A
元件数量：	2
端子数量：	3
最高工作温度：	150 °C
最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大重复峰值反向电压：	40 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

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产品型号BAT854SW的概述

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