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    产品型号BC488BRL1G的Datasheet PDF文件预览

    BC488B  
    High Current Transistors  
    PNP Silicon  
    Features  
    • Pb−Free Package is Available*  
    http://onsemi.com  
    COLLECTOR  
    1
    MAXIMUM RATINGS  
    Rating  
    Symbol  
    Value  
    −60  
    Unit  
    Vdc  
    Vdc  
    Vdc  
    Adc  
    2
    BASE  
    Collector - Emitter Voltage  
    Collector - Base Voltage  
    Emitter-Base Voltage  
    V
    CEO  
    V
    CBO  
    V
    EBO  
    −60  
    3
    EMITTER  
    −4.0  
    −1.0  
    Collector Current − Continuous  
    Total Device Dissipation  
    @ T = 25°C  
    I
    C
    P
    P
    D
    D
    625  
    5.0  
    mW  
    mW/°C  
    A
    Derate above 25°C  
    TO−92  
    CASE 29  
    STYLE 17  
    Total Device Dissipation  
    @ T = 25°C  
    Derate above 25°C  
    1.5  
    12  
    W
    mW/°C  
    C
    1
    2
    3
    Operating and Storage Junction  
    Temperature Range  
    T , T  
    −55 to +150  
    °C  
    J
    stg  
    Maximum ratings are those values beyond which device damage can occur.  
    Maximum ratings applied to the device are individual stress limit values (not  
    normal operating conditions) and are not valid simultaneously. If these limits are  
    exceeded, device functional operation is not implied, damage may occur and  
    reliability may be affected.  
    MARKING DIAGRAM  
    BC  
    488B  
    AYWW G  
    G
    THERMAL CHARACTERISTICS  
    Characteristic  
    Symbol  
    Max  
    Unit  
    Thermal Resistance,  
    Junction−to−Ambient  
    R
    q
    JA  
    200  
    °C/W  
    Thermal Resistance,  
    Junction−to−Case  
    R
    q
    JC  
    83.3  
    °C/W  
    BC488B = Device Code  
    A
    = Assembly Location  
    Y
    = Year  
    WW  
    G
    = Work Week  
    = Pb−Free Package  
    (Note: Microdot may be in either location)  
    ORDERING INFORMATION  
    †
    Device  
    Package  
    Shipping  
    BC488BRL1  
    TO−92  
    2000/Tape & Reel  
    2000/Tape & Reel  
    BC488BRL1G  
    TO−92  
    (Pb−Free)  
    †For information on tape and reel specifications,  
    including part orientation and tape sizes, please  
    refer to our Tape and Reel Packaging Specifications  
    Brochure, BRD8011/D.  
    *For additional information on our Pb−Free strategy and soldering details, please  
    download the ON Semiconductor Soldering and Mounting Techniques  
    Reference Manual, SOLDERRM/D.  
    ©
    Semiconductor Components Industries, LLC, 2005  
    1
    Publication Order Number:  
    September, 2005 − Rev. 1  
    BC488B/D  
    BC488B  
    ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
    A
    Characteristic  
    OFF CHARACTERISTICS  
    Symbol  
    Min  
    Typ  
    Max  
    Unit  
    Collector−Emitter Breakdown Voltage (Note 1)  
    V
    −60  
    −60  
    −4.0  
    −
    −
    −
    −
    −
    −
    −
    Vdc  
    Vdc  
    (BR)CEO  
    (BR)CBO  
    (BR)EBO  
    (I = −10 mAdc, I = 0)  
    C
    B
    Collector−Base Breakdown Voltage  
    (I = −100 mAdc, I = 0)  
    V
    V
    C
    E
    Emitter−Base Breakdown Voltage  
    (I = −10 mAdc, I = 0)  
    −
    Vdc  
    E
    C
    Collector Cutoff Current  
    (V = −40 Vdc, I = 0)  
    I
    −100  
    nAdc  
    CBO  
    CB  
    E
    ON CHARACTERISTICS*  
    DC Current Gain  
    h
    FE  
    −
    (I = −10 mAdc, V = −2.0 Vdc)  
    40  
    160  
    15  
    −
    260  
    −
    −
    400  
    −
    C
    CE  
    (I = −100 mAdc, V = −2.0 Vdc)  
    C
    CE  
    (I = −1.0 Adc, V = −5.0 Vdc)  
    C
    CE  
    Collector−Emitter Saturation Voltage  
    (I = −500 mAdc, I = −50 mAdc)  
    V
    Vdc  
    Vdc  
    CE(sat)  
    BE(sat)  
    −
    −
    −0.25  
    −0.5  
    −0.5  
    −
    C
    B
    (I = −1.0 Adc, I = −100 mAdc)  
    C
    B
    Base−Emitter Saturation Voltage  
    (I = −500 mAdc, I = −50 mAdc)  
    V
    −
    −
    −0.9  
    −1.0  
    −1.2  
    −
    C
    B
    (I = −1.0 Adc, I = −100 mAdc)  
    C
    B
    DYNAMIC CHARACTERISTICS  
    Current−Gain − Bandwidth Product  
    f
    −
    −
    −
    150  
    9.0  
    −
    −
    −
    MHz  
    pF  
    T
    (I = −50 mAdc, V = −2.0 Vdc, f = 100 MHz)  
    C
    CE  
    Output Capacitance  
    C
    ob  
    (V = −10 Vdc, I = 0, f = 1.0 MHz)  
    CB  
    E
    Input Capacitance  
    C
    110  
    pF  
    ib  
    (V = −0.5 Vdc, I = 0, f = 1.0 MHz)  
    EB  
    C
    1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.  
    TURN−ON TIME  
    V
    TURN−OFF TIME  
    +V  
    V
    BB  
    −1.0 V  
    CC  
    CC  
    +40 V  
    +40 V  
    5.0 ms  
    100  
    R
    100  
    R
    L
    L
    +10 V  
    0
    OUTPUT  
    OUTPUT  
    R
    R
    V
    in  
    V
    in  
    B
    B
    5.0 mF  
    5.0 mF  
    t = 3.0 ns  
    r
    100  
    100  
    *C < 6.0 pF  
    S
    *C < 6.0 pF  
    S
    5.0 ms  
    t = 3.0 ns  
    r
    *Total Shunt Capacitance of Test Jig and Connectors  
    For PNP Test Circuits, Reverse All Voltage Polarities  
    Figure 1. Switching Time Test Circuits  
    http://onsemi.com  
    2
     
    BC488B  
    200  
    100  
    70  
    T = 25°C  
    J
    V
    = −2.0 V  
    CE  
    C
    ibo  
    T = 25°C  
    J
    50  
    100  
    70  
    30  
    20  
    50  
    10  
    C
    obo  
    30  
    20  
    7.0  
    5.0  
    −2.0 −3.0 −5.0 −7.0 −10  
    −20 −30 −50 −70 −100  
    −200  
    −0.1 −0.2  
    −0.5 −1.0 −2.0  
    −5.0 −10 −20  
    −50 −100  
    I , COLLECTOR CURRENT (mA)  
    C
    V , REVERSE VOLTAGE (VOLTS)  
    R
    Figure 2. Current−Gain − Bandwidth Product  
    Figure 3. Capacitance  
    1.0 k  
    700  
    500  
    300  
    200  
    t
    t
    s
    100  
    70  
    t @ V  
    d
    = −0.5 V  
    BE(off)  
    f
    50  
    30  
    20  
    V
    I /I = 10  
    = −40 V  
    CC  
    C B  
    I = I  
    B1 B2  
    t
    r
    T = 25°C  
    J
    10  
    −5.0 −7.0 −10 −20 −30  
    −50  
    −500  
    −70 −100  
    −200 −300  
    I , COLLECTOR CURRENT (mA)  
    C
    Figure 4. Switching Time  
    1.0  
    0.7  
    0.5  
    D = 0.5  
    0.2  
    0.1  
    0.3  
    0.2  
    P
    (pk)  
    t
    1
    0.02  
    0.1  
    0.07  
    0.05  
    t
    2
    0.01  
    DUTY CYCLE, D = t /t  
    D CURVES APPLY FOR POWER  
    PULSE TRAIN SHOWN  
    1
    2
    SINGLE PULSE  
    READ TIME AT t (SEE AN−469)  
    1
    T
    T
    − T = P  
    Z
    J(pk)  
    J(pk)  
    C
    A
    (pk) qJC(t)  
    − T = P  
    Z
    (pk) qJA(t)  
    0.03  
    0.02  
    SINGLE PULSE  
    Z
    = r(t) • R  
    q
    JC(t)  
    q
    JC  
    Z
    = r(t) • R  
    q
    JA(t)  
    q
    JA  
    0.01  
    1.0  
    2.0  
    5.0  
    10  
    20  
    50  
    100  
    200  
    500  
    1.0ꢂk 2.0ꢂk  
    5.0ꢂk  
    10ꢂk  
    20ꢂk  
    100ꢂ  
    50ꢂk  
    t, TIME (ms)  
    Figure 5. Thermal Response  
    http://onsemi.com  
    3
    BC488B  
    1.0  
    −1.0 k  
    −700  
    100 ms  
    T = 25°C  
    J
    −500  
    −300  
    −200  
    0.8  
    0.6  
    V
    @ I /I = 10  
    C B  
    1.0 s  
    = 25°C  
    BE(sat)  
    1.0 ms  
    V
    @ V = 1.0 V  
    CE  
    BE(on)  
    T
    T
    A
    = 25°C  
    C
    −100  
    −70  
    0.4  
    −50  
    CURRENT LIMIT  
    THERMAL LIMIT  
    SECOND BREAKDOWN LIMIT  
    −30  
    −20  
    0.2  
    0
    V
    @ I /I = 10  
    C B  
    CE(sat)  
    BC490  
    −20 −30 −50 −70 −100  
    , COLLECTOR−EMITTER VOLTAGE (VOLTS)  
    −10  
    −1.0  
    0.5 1.0 2.0  
    5.0  
    10  
    20  
    50  
    100 200  
    500  
    −2.0 −3.0 −5.0 −7.0 −10  
    I , COLLECTOR CURRENT (mA)  
    C
    V
    CE  
    Figure 7. “On” Voltages  
    Figure 6. Active Region, Safe Operating Area  
    1.0  
    0.8  
    −0.8  
    −1.2  
    T = 25°C  
    J
    50  
    mA  
    I
    C
    = 10 mA  
    500 mA  
    100 mA  
    250 mA  
    0.6  
    0.4  
    −1.6  
    −2.0  
    R
    for V  
    BE  
    q
    VB  
    0.2  
    0
    −2.4  
    −2.8  
    0.05 0.1 0.2  
    0.5  
    1.0  
    2.0  
    5.0  
    10  
    20  
    50  
    0.5  
    1.0  
    2.0  
    5.0  
    10  
    20  
    50  
    100 200  
    500  
    I , COLLECTOR CURRENT (mA)  
    C
    I , COLLECTOR CURRENT (mA)  
    C
    Figure 8. Collector Saturation Region  
    Figure 9. Base−Emitter Temperature Coefficient  
    400  
    200  
    T = 125°C  
    J
    V
    = −1.0 V  
    CE  
    25°C  
    −55°C  
    100  
    80  
    60  
    40  
    −0.5 −0.7 −1.0  
    −2.0  
    −3.0  
    −5.0 −7.0  
    −10  
    −20  
    −30  
    −50 −70 −100  
    −200 −300  
    −500  
    I , COLLECTOR CURRENT (mA)  
    C
    Figure 10. DC Current Gain  
    http://onsemi.com  
    4
    BC488B  
    −1.0  
    −0.8  
    −1.0  
    −0.8  
    −0.6  
    −0.4  
    −0.2  
    0
    T = 25°C  
    T = 25°C  
    J
    J
    V
    @ I /I = 10  
    C B  
    BE(sat)  
    −0.6  
    −0.4  
    −50  
    mA  
    V
    @ V = −1.0 V  
    CE  
    I
    C
    = −10 mA  
    BE(on)  
    −100 mA  
    −250 mA −500 mA  
    −0.2  
    0
    V
    @ I /I = 10  
    C B  
    CE(sat)  
    −0.5 −1.0 −2.0  
    −5.0 −10 −20  
    −50 −100 −200 −500  
    −0.05 −0.1 −0.2  
    −0.5 −1.0 −2.0  
    −5.0 −10 −20  
    −50  
    I , COLLECTOR CURRENT (mA)  
    C
    I , BASE CURRENT (mA)  
    B
    Figure 11. “On” Voltages  
    Figure 12. Collector Saturation Region  
    −0.8  
    −1.2  
    −1.6  
    R
    for V  
    BE  
    q
    VB  
    −2.0  
    −2.4  
    −2.8  
    −0.5 −1.0 −2.0  
    −5.0 −10 −20  
    −50 −100 −200 −500  
    I , COLLECTOR CURRENT (mA)  
    C
    Figure 13. Base−Emitter Temperature Coefficient  
    http://onsemi.com  
    5
    BC488B  
    PACKAGE DIMENSIONS  
    TO−92  
    (TO−226)  
    CASE 29−11  
    ISSUE AL  
    NOTES:  
    1. DIMENSIONING AND TOLERANCING PER ANSI  
    Y14.5M, 1982.  
    A
    B
    2. CONTROLLING DIMENSION: INCH.  
    3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
    IS UNCONTROLLED.  
    4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
    BEYOND DIMENSION K MINIMUM.  
    R
    P
    L
    INCHES  
    DIM MIN MAX  
    MILLIMETERS  
    SEATING  
    PLANE  
    K
    MIN  
    4.45  
    4.32  
    3.18  
    0.407  
    1.15  
    2.42  
    0.39  
    MAX  
    5.20  
    5.33  
    4.19  
    0.533  
    1.39  
    2.66  
    0.50  
    −−−  
    A
    B
    C
    D
    G
    H
    J
    0.175  
    0.170  
    0.125  
    0.016  
    0.045  
    0.095  
    0.015  
    0.500  
    0.250  
    0.080  
    0.205  
    0.210  
    0.165  
    0.021  
    0.055  
    0.105  
    0.020  
    D
    X X  
    G
    J
    H
    V
    K
    L
    −−− 12.70  
    −−−  
    0.105  
    6.35  
    2.04  
    −−−  
    −−−  
    C
    N
    P
    R
    V
    2.66  
    2.54  
    −−−  
    −−− 0.100  
    SECTION X−X  
    0.115  
    0.135  
    −−−  
    −−−  
    2.93  
    3.43  
    1
    N
    −−−  
    N
    STYLE 17:  
    PIN 1. COLLECTOR  
    2. BASE  
    3. EMITTER  
    ON Semiconductor and  
    are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
    to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
    arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
    “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
    operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
    nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
    intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
    Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
    and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
    associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
    Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
    PUBLICATION ORDERING INFORMATION  
    LITERATURE FULFILLMENT:  
    N. American Technical Support: 800−282−9855 Toll Free  
    USA/Canada  
    ON Semiconductor Website: http://onsemi.com  
    Order Literature: http://www.onsemi.com/litorder  
    Literature Distribution Center for ON Semiconductor  
    P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
    Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
    Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
    Email: orderlit@onsemi.com  
    Japan: ON Semiconductor, Japan Customer Focus Center  
    2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
    Phone: 81−3−5773−3850  
    For additional information, please contact your  
    local Sales Representative.  
    BC488B/D  
    配单直通车
    BC488BRL1G产品参数
    型号:BC488BRL1G
    Brand Name：ON Semiconductor
    是否无铅： 不含铅
    生命周期：End Of Life
    零件包装代码：TO-92
    包装说明：LEAD FREE, CASE 29-11, TO-226, 3 PIN
    针数：3
    制造商包装代码：29-11
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.21.00.75
    风险等级：5.46
    Is Samacsys：N
    最大集电极电流 (IC)：1 A
    集电极-发射极最大电压：60 V
    配置：SINGLE
    最小直流电流增益 (hFE)：15
    JEDEC-95代码：TO-92
    JESD-30 代码：O-PBCY-T3
    JESD-609代码：e1
    元件数量：1
    端子数量：3
    封装主体材料：PLASTIC/EPOXY
    封装形状：ROUND
    封装形式：CYLINDRICAL
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：PNP
    认证状态：Not Qualified
    表面贴装：NO
    端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
    端子形式：THROUGH-HOLE
    端子位置：BOTTOM
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：150 MHz
    Base Number Matches：1
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