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BC847ATT1, BC847BTT1,

BC847CTT1

General Purpose

Transistors

NPN Silicon

http://onsemi.com

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−75/SOT−416 package which

is designed for low power surface mount applications.

COLLECTOR

3

Features

1

BASE

• Pb−Free Packages are Available*

2

EMITTER

MAXIMUM RATINGS (T = 25°C)

A

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

45

Unit

V

CEO

V

CBO

V

EBO

3

CASE 463

SC−75/SOT−41

50

V

6.0

100

V

2

6

1

STYLE 1

Collector Current − Continuous

I

C

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

THERMAL CHARACTERISTICS

xxM

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

P

D

200

mW

xx = Device Code

M = Date Code

T = 25°C

A

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

R

600

q

JA

Junction−to−Ambient (Note 1)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Total Device Dissipation,

FR−4 Board (Note 2)

P

D

300

mW

T = 25°C

A

Derated above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

R

400

q

JA

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

J

stg

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

1

Publication Order Number:

June, 2004 − Rev. 1

BC847ATT1/D

BC847ATT1, BC847BTT1, BC847CTT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

V

(BR)CEO

(I = 10 mA)

C

BC847 Series

45

50

6.0

−

Collector−Emitter Breakdown Voltage

V

(BR)CES

(BR)CBO

(BR)EBO

(I = 10 mA, V = 0)

C

EB

Collector−Base Breakdown Voltage

(I = 10 mA)

C

V

Emitter−Base Breakdown Voltage

(I = 1.0 mA)

E

Collector Cutoff Current (V = 30 V)

I

−

15

5.0

nA

mA

CB

CBO

(V = 30 V, T = 150°C)

CB

A

ON CHARACTERISTICS

DC Current Gain

h

FE

−

(I = 10 mA, V = 5.0 V)

BC847A

BC847B

BC847C

−

90

150

270

−

C

CE

(I = 2.0 mA, V = 5.0 V)

BC847A

BC847B

BC847C

110

200

420

180

290

520

220

450

800

C

CE

Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)

V

−

0.25

0.6

V

C

B

CE(sat)

Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)

C

B

Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)

V

−

0.7

0.9

−

C

B

BE(sat)

Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)

C

B

Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)

V

BE(on)

580

−

660

−

700

770

mV

C

CE

Base−Emitter Voltage (I = 10 mA, V = 5.0 V)

C

CE

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

f

100

−

MHz

T

(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)

C

CE

Output Capacitance (V = 10 V, f = 1.0 MHz)

C

4.5

10

pF

dB

CB

obo

Noise Figure

NF

(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

−

C

CE

S

http://onsemi.com

2

BC847ATT1, BC847BTT1, BC847CTT1

2.0

1.5

1.0

V

= 10 V

T = 25°C

A

0.9

0.8

0.7

CE

T = 25°C

A

V

@ I /I = 10

C B

BE(sat)

1.0

0.8

V

BE(on)

@ V = 10 V

CE

0.6

0.5

0.4

0.3

0.6

0.4

0.3

0.2

0.1

V

@ I /I = 10

C B

CE(sat)

0.2

0

0.1

0.2

0.5 1.0

2.0

5.0 10

20

50 100 200

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

I , COLLECTOR CURRENT (mAdc)

C

I , COLLECTOR CURRENT (mAdc)

C

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

2.0

1.6

1.2

0.8

0.4

0

1.0

1.2

1.6

2.0

2.4

2.8

T = 25°C

−55°C to +125°C

A

I

C

= 200 mA

I

=

I

=

I

C

= 50 mA

I = 100 mA

C

10 mA 20 mA

0.02

0.1

1.0

10 20

0.2

1.0

10

100

I , BASE CURRENT (mA)

B

I , COLLECTOR CURRENT (mA)

C

Figure 3. Collector Saturation Region

Figure 4. Base−Emitter Temperature Coefficient

http://onsemi.com

3

BC847ATT1, BC847BTT1, BC847CTT1

BC847

1.0

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

0.00001

0.0001

0.001

0.01

0.1

t, TIME (s)

1.0

10

100

1000

Figure 5. Normalized Thermal Response

400

300

10

7.0

5.0

T = 25°C

A

200

C

ib

V

= 10 V

CE

T = 25°C

100

80

3.0

2.0

A

C

ob

60

40

30

20

1.0

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

50

0.4 0.6 0.8 1.0

2.0

4.0 6.0 8.0 10

20

40

I , COLLECTOR CURRENT (mAdc)

C

V , REVERSE VOLTAGE (VOLTS)

R

Figure 7. Current−Gain − Bandwidth Product

Figure 6. Capacitances

http://onsemi.com

4

BC847ATT1, BC847BTT1, BC847CTT1

ORDERING INFORMATION

Device

†

Marking

1E

Package

Shipping

BC847ATT1

SC−75/SOT−416

3,000 / Tape & Reel

BC847BTT1

1F

3,000 / Tape & Reel

BC847BTT1G

1F

SC−75/SOT−416

(Pb−Free)

BC847CTT1

1G

SC−75/SOT−416

3,000 / Tape & Reel

BC847CTT1G

SC−75/SOT−416

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

http://onsemi.com

5

BC847ATT1, BC847BTT1, BC847CTT1

PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463−01

ISSUE C

NOTES:

−A−

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

S

2

MILLIMETERS

DIM MIN MAX

INCHES

MIN MAX

3

G

−B−

A

B

C

D

G

H

J

0.70

1.40

0.60

0.15

0.90 0.028 0.035

1.80 0.055 0.071

0.90 0.024 0.035

0.30 0.006 0.012

1

D 3 PL

0.20 (0.008)

M

B

1.00 BSC

0.039 BSC

−−− 0.004

0.20 (0.008) A

K

−−−

0.10

1.45

0.10

0.25 0.004 0.010

1.75 0.057 0.069

0.20 0.004 0.008

K

L

S

0.50 BSC

0.020 BSC

J

C

L

H

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BC847ATT1/D

http://onsemi.com

6

型号:	BC847CTT1
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SC-75
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
制造商包装代码：	CASE 463-01
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.03
Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	45 V
配置：	SINGLE
最小直流电流增益 (hFE)：	420
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

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