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产品型号BCV27的概述

芯片BCV27的概述 BCV27是一款广泛应用于电子设备中的双向电压控制元件，属于可控硅（SCR）类的半导体器件。其设计旨在满足低功耗、高效率和高可靠性的应用需求，BCV27被广泛用于电源管理、驱动电路和信号调理等领域。该器件具有良好的电流承受能力，其操作温度范围广，使其适合在各种复杂环境下稳定工作。 BCV27的详细参数 BCV27的功能、特性和电气参数是设计工程师在选择和应用该器件时需要重点考虑的因素。以下是BCV27的主要参数： - 最大额定电压（V_RRM）：400V - 最大正向电流（I_F）：5A - 封装形式：TO-220 - 功率耗散（P_D）：35W - 工作温度范围：-40℃至+150℃ - 反向恢复时间（t_rr）：100ns - 环境湿度范围：湿度80%（相对湿度）除以上参数外，对于应用BCV27执行的功能，反向漏电流、保持电压和触发电流等也是非常关键的设计参...

产品型号BCV27的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

k, halfpage

M3D088

BCV27; BCV47

NPN Darlington transistors

1999 Apr 08

Product speciﬁcation

Supersedes data of 1997 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

FEATURES

PINNING

• Medium current (max. 500 mA)

• Low voltage (max. 60 V)

DESCRIPTION

base

• High DC current gain (min. 20000).

emitter

collector

APPLICATIONS

• Preamplifier input applications.

DESCRIPTION

handbook, halfpage

NPN Darlington transistor in a SOT23 plastic package.

PNP complements: BCV26 and BCV46.

TR1

TR2

MARKING

TYPE NUMBER

BCV27

MARKING CODE⁽¹⁾

MAM298

Top view

BCV47

Note

Fig.1 Simplified outline (SOT23) and symbol.

= p : Made in Hong Kong.

= t : Made in Malaysia.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

BCV27

−

BCV47

V_CES

collector-emitter voltage

BCV27

open base

−

BCV47

V_EBO

I_C

I_CM

I_B

emitter-base voltage

collector current (DC)

peak collector current

base current

open collector

500

800

100

250

+150

150

+150

°C

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

−65

−

T_amb

−65

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

note 1

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient

500

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_amb= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I_CBO

collector cut-off current

BCV27

I_E= 0; V_CBO= 30 V

−

100

BCV47

I_E= 0; V_CBO= 60 V

I_E= 0; V_EB= 10 V

V_CE= 5 V; (see Fig.2)

I_C= 1 mA

−

I_EBO

h_FE

emitter cut-off current

DC current gain

BCV27

4000

−

I_C= 10 mA

10000 −

20000 −

I_C= 100 mA

DC current gain

BCV47

_CE= 5 V; (see Fig.2)

I_C= 1 mA

2000

4000

10000

−

I_C= 10 mA

−

I_C= 100 mA

−

V_CEsat

V_BEsat

V_BEon

f_T

collector-emitter saturation voltage I_C= 100 mA; I_B= 0.1 mA

−

base-emitter saturation voltage

base-emitter on-state voltage

transition frequency

I_C= 100 mA; I_B= 0.1 mA

I_C= 10 mA; V_CE= 5 V

−

1.5

1.4

−

I_C= 30 mA; V_CE= 5 V; f = 100 MHz −

220

MHz

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

MGD837

80000

handbook, full pagewidth

60000

40000

20000

−1

(mA)

V_CE= 2 V.

Fig.2 DC current gain; typical values.

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 Apr 08

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BCV27; BCV47

NOTES

1999 Apr 08

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Pakistan: see Singapore

Belgium: see The Netherlands

Brazil: see South America

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Colombia: see South America

Czech Republic: see Austria

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Hungary: see Austria

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Middle East: see Italy

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/00/04/pp8

Date of release: 1999 Apr 08

Document order number: 9397 750 05551

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BCV27产品参数

型号:	BCV27
生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.13
Is Samacsys：	N
最大集电极电流 (IC)：	0.3 A
集电极-发射极最大电压：	30 V
配置：	DARLINGTON
最小直流电流增益 (hFE)：	20000
JESD-30 代码：	R-PDSO-G3
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	NPN
认证状态：	Not Qualified
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	220 MHz
Base Number Matches：	1

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