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产品型号BD9862MUV-E2的概述

芯片BD9862MUV-E2的概述 BD9862MUV-E2是一款高效的电源管理芯片,主要用于显示器和便携式设备的电源调节。它由日本的半导体制造商ROHM公司设计和生产,该芯片在市场上广受欢迎,尤其是在消费电子和嵌入式系统中。 BD9862MUV-E2具有多种功能,能够提供高效率和低功耗的解决方案。其核心优势在于其高集成度,减少了外部电路的需求,并简化了设计过程。此外,它的出色热性能保证了设备在高负载下的稳定性。 芯片BD9862MUV-E2的详细参数 BD9862MUV-E2的主要参数可以分为几个类别,如电源特性、输入输出电压、工作温度、封装类型等。 1. 电源特性 - 输入电压范围:4.5V至30V - 输出电压:可调范围通常在0.8V至15V - 输出电流:最高可达3A - 效率:最高可达95% 2. 工作温度 - 工作温度范围:-40℃至+85℃ ...

产品型号BD9862MUV-E2的Datasheet PDF文件预览

Power Supply IC Series for TFT-LCD Panels  
5V Input Multi-channel  
System Power Supply IC  
BD9862MUV  
No.10035EAT16  
Description  
The BD9862MUV is a 3ch system power supply for mobile TFT liquid crystal panels.Operable at VBAT=1.8V, CH2 & CH3  
adopts the original PWM/PFM automatic switching control charge pump and realizes high efficiency in full-load range.  
Features  
1) Input voltage range: 1.8V~4.5V (The input voltage can be 5.5V if a double charge pump is not used)  
2) The step-up switching regulator has a built-in output FET (CH1)  
3) There is a built-in PWM/PFM automatic switching charge pump circuit with a fixed PWM terminal (CH2,3)  
4) Switching regulator oscillation frequency: MHz(typ.)  
5) Charge pump oscillation frequency: 500kHz(typ.)  
6) There is a built-in circuit to discontinue output (timer latch type) in the event of overload  
7) Package VQFN024V4040  
Applications  
Small & medium TFT liquid crystal displays etc.  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Symbol  
VBAT  
LX  
Ratings  
-0.3 ~ 7  
-0.3 ~ 18  
Unit  
V
Maximum adding power supply voltage  
FB1, INV1, INV2, UVLOSET, C2N,  
VIN2A, CN, CP, CPOUT, REGOUT,  
PWM, RT ,VREF ,NON3  
Maximum adding voltage  
-0.3~7  
V
VIN3, C3P, Vo2, C2P, VIN2B  
-0.3~15.5  
0.34(*1)  
0.70(*2)  
-40 ~ +85  
-55 ~ +150  
+150  
Power dissipation  
Pd  
W
Operating temperature range  
Storage Temperature Range  
Junction temperature  
Topr  
Tstg  
Tjmax  
(*1) When used as a stand-alone IC (for Ta=25and over), the value is reduced by 27mW/.  
(*2) When used for Printed Circuit Boards (glass epoxy board of 74.2mm×74.2mm×1.6mm) mounting  
for Ta=25and over, the value is reduced by 5.6mW/.  
Operating Conditions(Ta=25)  
Ratings  
Parameter  
Symbol  
Unit  
condition  
MIN  
1.8  
-
TYP  
MAX  
1)  
Power Supply Voltage  
VBAT  
Vo1  
-
-
-
-
4.5(※  
15  
15  
-
V
V
V
V
CH1Output Voltage  
CH2 Output Voltage  
CH3 Output Voltage  
Vo2  
-
Vo3  
-15  
Starting capacity, adding charge pump  
flying capacitor  
Reversing capacity charge pump  
flying capacitor  
Cflys,Cflya  
Cflyi  
0.1  
0.22  
-
-
µF  
µF  
0.022  
0.047  
Starting charge pump Output capacitance  
Switching regulator oscillation frequency  
Charge pump oscillation frequency  
CH1 PowerNMOS Drain current  
CCPOUT  
fOSC1  
fOSC2  
Iidn1  
1.0  
700  
350  
-
2.0  
1.0  
500  
-
-
µF  
CCPOUTCfly*10  
1.4  
700  
1.0  
MHz RRT=82k~180kΩ  
kHz RRT=82k~180kΩ  
A
(1) When using a double charge pump for starting. 5.5V when not using a double charge pump  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
1/16  
Technical Note  
BD9862MUV  
Electrical Characteristics (unless otherwise specified,Ta=25,VBAT=2.5V)  
Limits  
Parameter  
Symbol  
Unit  
Condition  
MIN  
TYP  
MAX  
Starting circuit part】  
Output voltage  
Vcpout  
Vst  
3.7  
-
4.2  
-
4.7  
1.8  
V
V
Iout=0~10mA  
VBAT Voltage to start operation  
Soft start part】  
CH1Soft start time  
Tss1  
Tss2  
Tss3  
0.5  
3.5  
3.5  
1.0  
5.0  
5.0  
2.0  
6.5  
6.5  
ms RRT=120k  
ms RRT=120kΩ  
ms RRT=120kΩ  
CH2 Soft start time  
CH3 Soft start time  
Oscillation circuit 】  
Switching regulator frequency  
Charge Pump Frequency  
Regulator】  
fosc1  
fosc2  
0.9  
1.0  
1.1  
MHz RRT=120kΩ  
kHz RRT=120kΩ  
450  
500  
550  
Output Voltage  
VREGOUT  
3.4  
3.5  
3.6  
V
Iout=0~10mA,VBAT=2.0V~4.5V  
PWM Comparator】  
MAX Duty1  
Dmax1  
Dmax2  
Dmax3  
85  
40  
40  
90  
45  
45  
95  
50  
50  
%
%
%
MAX Duty2  
MAX Duty3  
Error amplifier】  
INV1Threshold Voltage  
INV2Threshold Voltage  
NON3Threshold Voltage  
CH3 Error amplifier off set voltage  
Output part(Switching Regulator 】  
NMOSFET ON Resistance  
Leak current when NMOSFET OFF  
Adding step-up charge pump】  
VINV1  
VINV2  
VNON3  
Voffset  
0.985  
0.985  
0.985  
-50  
1.0  
1.0  
1.0  
0
1.015  
1.015  
1.015  
50  
V
V
V
Making VREF as absolute value  
REGOUT=3.5V  
mV  
RonN1  
0.2  
-
0.45  
-
0.7  
10  
IreakN1  
µA UVLOSET=0V  
Io=0~10mA,VIN2A=3.5V,  
VIN2B=10V,INV2=GND  
Output impedance  
R2  
-
53  
90  
Inverted charge pump】  
PMOS  
NMOS  
RonP3  
RonN3  
-
-
20  
10  
40  
20  
Output FET  
ON resistance  
VIN3=10V  
Control Terminal Part】  
PWM Terminal pull down resistance  
RPWM  
VPWMH  
VPWML  
0.5  
1.2  
0
1
-
2
MΩ  
V
Operation  
VBAT  
0.3  
PWM Fixed mode  
PWM Terminal  
control voltage  
Non-operation  
-
V
PWM/PFM Auto shift mode  
Short circuit protection circuit】  
Timer Latch Time  
UVLO】  
Latch  
110  
131  
150  
ms RRT=120kΩ  
Relief voltage threshold  
Hysteresis  
UVth  
0.97  
50  
1.0  
75  
1.03  
100  
V
UVhy  
mV  
Circuit current】  
VBAT=5V,  
mA UVLOSET=INV1=INV2=5V  
Circuit current during operation  
(VBAT terminal inflow current)  
IVBAT  
0.4  
0.8  
1.6  
NON3=-0.2V  
It is not the radiation-proof design for this product.  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
2/16  
Technical Note  
BD9862MUV  
Power Dissipation Reduction  
4.5  
: Stand-alone IC  
: One-layer substrate  
(Surface-layer heat release copper foil 0mm2)  
: Four-layer substrate  
(Surface and inside-layer heat release copper foil 10mm2)  
(2, 3 layer heat release copper foil 5505mm2)  
: Four-layer substrate  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.56W  
2.21W  
(All-layers heat release copper foil 5505mm2)  
: θja = 367.6/W  
: θja = 178.6/W  
: θja =  
: θja =  
56.6/W  
35.1/W  
0.70W  
0.34W  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature Ta  
(℃)  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
3/16  
Technical Note  
BD9862MUV  
Reference Data(Unless specified Ta=25,VCC=2.5V,RRT=120k)  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
90  
85  
80  
75  
70  
65  
50  
48  
46  
44  
42  
40  
38  
36  
PWM/PFM MODE  
L=15uH  
PWM/PFM MODE  
L=4.7uH  
PWM MODE  
PWM MODE  
1
10  
Load current[mA]  
100  
0.1  
1
Load current[mA]  
10  
0.1  
1
10  
Load current[mA]  
Fig.1 CH1Current Load to Efficiency  
(Vo1=10V)  
Fig.2 CH2 Current Load to Efficiency  
(VIN2A=3.5V,VIN2B=10V,Vo2=12V)  
Fig.3 CH3 Current Load to Efficiency  
(VIN3=10V,Vo3=-5V)  
3.520  
3.515  
3.510  
3.505  
3.500  
3.518  
3.516  
3.514  
3.512  
3.510  
3.508  
3.506  
3.504  
3.6  
3.59  
3.58  
3.57  
3.56  
3.55  
3.6  
4.0  
4.4  
4.8  
5.2  
-40 -15  
10  
35  
60  
85  
0
5
10  
15  
Load current[mA]  
CPOUT voltage[V]  
Ta[℃]  
Fig.4 REGOUT  
Output Load Regulation  
Fig.5 REGOUT  
Output Line Regulation  
Fig.6 REGOUT Output Voltage  
Temperature Feature  
1.006  
1.005  
1.004  
1.003  
1.002  
1.006  
1.005  
1.004  
1.003  
1.002  
1.012  
1.011  
1.010  
1.009  
1.008  
-40  
-15  
10  
35  
60  
85  
-40  
-15  
10  
35  
60  
85  
-40  
-15  
10  
35  
60  
85  
Ta[℃]  
Ta[℃]  
Ta[℃]  
Fig.7 INV1 Threshold Voltage  
Temperature Feature  
Fig.8 INV2 Threshold Voltage  
Temperature Feature  
Fig.8 NON3 Threshold Voltage  
Temperature Feature  
1050  
1040  
1030  
1020  
1010  
1000  
990  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1015  
1010  
1005  
1000  
995  
980  
970  
990  
960  
985  
950  
0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
-40 -15 10  
35  
60  
85  
2
3
4
5
FB1 voltage[V]  
Ta[℃]  
VBAT[V]  
Fig.10 CH1 FB1Voltage-  
On Duty Feature  
Fig.11 CH1 Switching Frequency  
Temperature Feature  
Fig.12 CH1 Switching Frequency  
to VBAT Voltage Feature  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
4/16  
Technical Note  
BD9862MUV  
Reference data(Unless specified Ta=25,VCC=2.5V)  
5.08  
5.06  
5.04  
5.02  
5
91.2  
91.1  
91  
1.01  
1.005  
1
0.995  
0.99  
90.9  
90.8  
90.7  
90.6  
90.5  
90.4  
90.3  
0.985  
0.98  
0.975  
0.97  
4.98  
4.96  
4.94  
0.965  
0.96  
0.955  
-40 -15  
10  
35  
60  
85  
-40 -15  
10  
35  
60  
85  
-40 -15  
10  
35  
60  
85  
Ta[℃]  
Ta[℃]  
Ta[℃]  
Fig.13 CH1  
Soft Start Temperature Feature  
Fig.14 CH2,CH3  
Soft Start Temperature Feature  
Fig.15 CH1  
Max Duty Temperature Feature  
46  
45.9  
45.8  
45.7  
45.6  
45.5  
45.4  
45.3  
45.2  
45.1  
45  
1500  
1400  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
-40 -15  
10  
35  
60  
85  
60 80 100 120 140 160 180 200  
RRT[kOhm]  
Ta[℃]  
Fig.16 CH2,CH3  
Max Duty Temperature Feature  
Fig.17 RT Resistance to CH1  
Switching Frequency Feature  
Block Diagram  
REGOUT  
CP CN CPOUT  
INV1  
VBAT  
VBAT  
FB1  
REGOUT  
Error Amp1  
VBAT  
-
+
+
PWM Comp1  
LX  
+
-
VBAT  
Step Up  
VBAT  
CPOUT  
LDO  
Switching Control  
500kHz CLK  
1.0V  
SS1 OK  
Soft  
Start  
Ring OSC  
for startup  
CLK  
× 2  
C.P.  
PFM  
Control  
PGND1  
SELECTOR  
CPOUT  
Max Duty1  
REGOUT  
UVLO  
REGOUTUVLO:L OK  
1.2V  
H:Vout OFF  
L:Vout ON  
INV2  
-
+
CLK Control  
Comp  
VIN2A  
ref2  
C2N  
DRIVER  
-
+
PWM Comp2  
+
-
PWM/PFM  
Control  
PGND2  
500kHz CLK  
REGOUT  
Error Amp2  
Soft  
Start  
1.0V  
CLK  
1MHz SLOPE  
Max Duty CP  
SS2 OK  
VIN2B  
Min Duty  
PWM  
RT  
OSC  
SS3 OK  
1/2 f  
C2P  
VO2  
DRIVER  
Max Duty1  
Max Duty CP  
Min Duty  
VBAT  
VBAT REGOUT  
VREF & IREF  
GND  
DISCHARGE  
TSD  
1.2V  
1.0V  
+
-
VIN3  
C3P  
VBATUVLO:L  
+
-
PWM/PFM  
Control  
DRIVER  
H:PWM  
L:PWM/PFM Auto  
PWM  
VBATUVLO:L  
Error Amp3  
PWM Comp3  
Max Duty CP  
Min Duty PWM  
VBAT  
PGND2  
VBATUVLO  
H:IC OFF  
L:IC ON  
VBAT  
UVLOSET  
-
+
NON3  
VREF  
ref1(1.0V)  
ref2(1.0V)  
1.2V  
VBAT  
VREF  
REGOUT  
+
-
0.7V  
INV1  
REGOUT  
UVLO:L  
1.0V/0.9V  
SCP  
COUNTER  
-
+
SCPOUT  
CHI-CH3 Driver stop  
+
+
-
Soft  
Start  
SS3 OK  
ErrAmpOUT2  
ErrAmpOUT3  
2.0V  
1.0V  
Buffer  
CLK  
SCPCOMP  
SS2 OK  
SS1 OK  
Fig.18  
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2010.03 - Rev.A  
5/16  
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Technical Note  
BD9862MUV  
Terminal Location Diagram  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
19  
20  
21  
22  
23  
24  
8
7
1
2
3
4
5
6
Fig.19  
Terminal Number and Terminal Name and Function  
Terminal  
Number  
Terminal  
Name  
Function  
1
2
FB1  
INV2  
Error amplifier output terminal for CH1  
Error amplifier inverted input terminal for CH1  
UVLO Standard voltage terminal  
3
UVLOSET  
VIN3  
4
Reversing charge pump input terminal  
5
C3P  
Reversing charge pump. Flying capacitor H-side input terminal  
Built-in EFT grounding terminal for CH2,3  
Adding step-up charge pump. Flying capacitor L-side input terminal  
Adding step-up charge pump input terminal  
Adding step-up charge pump output terminal  
Adding step-up charge pump. Flying capacitor H-side input terminal  
Adding step-up charge pump input terminal  
Inductor connecting terminal  
6
PGND2  
C2N  
7
8
VIN2A  
VO2  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
C2P  
VIN2B  
LX  
PGND1  
CN  
Built-in FET grounding terminal for CHI1  
Start-up charge pump. Flying capacitor L-side input terminal  
Start-up charge pump .Flying capacitor H-side input terminal  
Power supply input terminal  
CP  
VBAT  
CPOUT  
REGOUT  
PWM  
GND  
Start-up charge pump output terminal  
Regulator output terminal  
Charge pump block PWM/PFM switching terminal  
Grounding terminal  
RT  
Connecting terminal of resistor for frequency timing setting  
Standard voltage output terminal  
VREF  
NON3  
INV1  
Non-reversing input terminal of error amplifier for CH3  
Reversing input terminal of error amplifier for CH1  
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2010.03 - Rev.A  
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© 2010 ROHM Co., Ltd. All rights reserved.  
Technical Note  
BD9862MUV  
System Description  
BD9862MUV is a 3ch system power supply optimized for TFT liquid crystal displays.  
Features of each channel are explained as follows  
CH1  
This is a voltage mode switching regulator with a built-in high voltage-resistant output FET. Capable of high-speed operation  
at the maximum switching frequency of 1.4MHz, and compatible with a high step-up ratio with Max Duty of 90%(typ.).  
CH2  
It’s a PWM/PFM automatic switching control with a variable-voltage adding charge pump. Due to intermittent switching at  
the time of PFM mode, the switching loss is reduced, so high efficiency is realized even in light load conditions. Moreover,  
it is capable of operating at the maximum switching frequency of 700KHz because of a built-in high voltage resistant,  
high-speed FET driver. In addition, it is equipped with an On Duty prediction function, so the output voltage ripple is  
lowered considerably even at the time of PFM operation.Due to the built-in output discharge resistor (1ktyp.) and FET  
phase compensation circuit, it can operate with two capacitors and two resistors.  
CH3  
It includes a PWM/PFM automatic switching control, variable-voltage reversing charge pump controller. The control  
method is the same as CH2.  
Block functional descriptions  
Error amplifier block  
Detects the output voltage with INV terminal (NON3 terminal in case of CH3), amplifies the error between it and standard  
voltage, and outputs from the FB terminal. The accuracy is ±1%(1.5% in case of CH2 & CH3).  
PWM(Pulse Width Modulation)Convertor block  
The PWM convertor inputs the error detected by the error amplifier and outputs the PWM signal by comparing with a  
saw-tooth wave.  
PWM/PFM Control Block  
Due to the input of the PWM terminal, this block switches the CH2 & CH3 between the fixed PWM mode and the automatic  
switching mode of PFM(Pulse Frequency Modulation)/PWM. At the time of PFM mode, the efficiency under a light load is  
raised by controlling and making the lowest On Duty of PWM signal to be 7%(typ.) and reducing the number of switching times.  
LDO Block  
This is a power supply to operate the internal circuit. In addition, it can be used as input of VIN2B. The output voltage is  
3.5V(typ.), and the maximum load is 10mA. Moreover, due to a built-in UVLO, the release voltage is 2.5V(typ) and the  
protective voltage is 2.4V(typ).  
Start-up Charge Pump Block  
If REGOUT is 2.5V(typ.), then the ring oscillator, which operates at 500kHz or so, is started and the double charge  
pump is operated. The clock pulse is controlled in such a way that the output voltage of this charge pump becomes  
4.2V(typ.). Moreover, if REGOUT becomes more than 2.5V(typ.) (i.e. REGOUT2.5V(typ.)), then the clock is supplied  
from the main OSC that creates a saw tooth wave. If the input voltage is usually more than 4.5V, then it is possible to  
bypass the start-up circuit. (refer to the application example)  
OSC Block  
It generates a saw-tooth wave and inputs it into the PWM comparator. It is possible to change the oscillating frequency by  
means of the resistor RT. Due to RRT=120k, the CH1 operates at 1MHz(typ.). The double charge pump, CH2 and CH3  
operate at 1/2 of CH1 frequency.  
VREF Block  
Generate the constant voltage that is standard inside the IC.  
UVLO Block  
Performs the under voltage lockout by detecting the VBAT voltage with the UVLOSET terminal. The UVLO voltage can be  
set by an external resistor.  
Soft Start Block  
Due to sweep-starting of the standard voltage of the error amplifier at the time of start-up, the excess input current & output  
voltage is reduced. Moreover, only at the time of soft start, the CH2 is regarded as the resistance value of 150typ  
between VIN2B & C2P and the CH3 is regarded as the resistance value of 60typ between VIN3 & C3P therefore the  
input current is limited.  
Short-circuit protection of timer latch (SCP) block  
Monitors the INV1 terminal and the error amplifier outputs of CH2 & CH3, and turns off the drivers of CH1~CH3 if a  
short-circuit condition continues for more than a certain period of time. The timer latch time is counted by the CH1 internal  
switching pulse. The counting is started when a short-circuit condition begins, ant the drivers are turned off when 131,072  
is reached.  
Example) if RRT=120k, then 131072×(1/1[MHz])=131.072ms  
Thermal shutdown (TSD) block  
Detects abnormal heat generation of the IC, stops the switching operation of all Ch and prevents the IC from thermal  
overload. The detecting temperature is 175(typ), and the hysteresis is 10(typ).  
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2010.03 - Rev.A  
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Technical Note  
BD9862MUV  
Timing Chart  
1) When Starting  
VBATUVLO release  
VBAT  
2 times charge pump  
Start on  
CPOUT  
REGOUT  
Vo1  
Regulator  
Start on  
REGOUTUVLO  
Relief  
Vo1 Soft start  
close  
CH1 Start on  
CH2 Start on  
Vo2  
Vo3  
CH3 Start on  
Vo3 Soft start  
All CH Start close  
close  
Fig.20  
2) Sample SCP Operation When CH1 is short  
Vo1 Output Short Circuit  
Vo1  
INV1  
0.7V  
SCP Capacitor  
Output (internal)  
SCP Timer  
operation  
SCP Latch  
(Internal)  
Driver stop  
(CH2, CH3 stop too)  
Lx1  
MAX Duty operation  
Normal operation  
SCP  
Fig.21  
8/16  
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© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
Technical Note  
BD9862MUV  
3) SampleSCP Operation When CH2 is Short  
Output short  
Vo2  
ERROR OUT2 (INTERNAL)  
2V  
OS C SLOP (INTERNAL)  
Driverstop
C2N  
(CH1, CH3 stop too)  
SCP Timer operation  
SCP Capacitor  
Output (Internal)  
SCP latch  
(Internal)  
MAX Duty operation  
SCP  
Normal operation  
Operates similarly at the time of CH3 short-circuit.  
Fig.22  
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2010.03 - Rev.A  
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© 2010 ROHM Co., Ltd. All rights reserved.  
Technical Note  
BD9862MUV  
Method to select the application parts  
1)Setting of output voltage  
The output voltage VOUT is set by dividing the resistance of the external resistor.  
CH1,CH2:VOUT=1+R2/R1  
CH3:VOUT=-((R4/R3)+Voffset)  
R1: Feedback resistor (GND side), R2: Feedback resistor (VOUT side), R3: Feedback resistor (VREF side),  
R4: Feedback resistor (VOUT side)  
2)Setting of the output inductor  
The maximum current ILpeak that flows in the inductor is calculated by the sum of the average current IL and the maximum  
value of ripple current IL.  
ILpeak = IL + IL.  
Generally IL. is set to about 30% of IL.  
The average current IL and the ripple current IL. are calculated according to the following formulas.  
Vin  
Vout Vin  
Vout  
min  
IL  
IL  
Iout max  
max  
2 fosc L Vout  
Vin min  
L: value of inductance fOSC: switching frequency Vinmax: maximum input voltage Vinmin: minimum input voltage  
Vout: set value of output voltage  
Please set in such a way thatILpeak (the rated value of inductor current) is not exceeded. If ILpeak exceeded, then the  
efficiency is lowered extremely and damage to the inductor is caused. Please set in such a way that a good margin is left  
because the inductance varies in value.  
3)Setting of output capacitor  
The capacitance & ESR of the output capacitor is influenced a great deal by output voltage ripple. Moreover, PFM mode  
intentionally makes the switching intermittent, so the output voltage ripple becomes larger compared with PWM mode.  
Please use an appropriate capacitor according to the service condition. In addition, please be sure to connect a ceramic  
capacitor of 1µF to REGOUT terminal.  
It is assumed that this IC uses a multilayer ceramic capacitor. For small multilayer ceramic capacitors such as Size 1608  
etc., its actual capacitance may be lower than its nominal one because of the voltage that is bypassed. Please check to  
confirm various characteristics such as DC bypass etc. before use.  
4)Setting of flying capacitor  
Please set the capacitance of the flying capacitor of the start-up charge pump not to exceed 1/10 of the capacitance of the  
CPOUT output capacitor. If it is more than 1/10 of the capacitance, damage may be caused.  
5)Setting of the input capacitor  
A bypass capacitor for input is necessary to the VBAT terminal. Due to input & output voltage, load and wiring pattern etc.,  
the actual capacitance is different from the necessary one, so please carefully check to confirm.  
6) Setting of CR for phase compensation  
The CR for phase compensation is varied due to the characteristics of the capacitor & inductor, which are used in the  
output part, the input & output voltage and the load current etc. The phase-compensation CR constant in a recommended  
circuit diagram is set according to the service conditions, but applications under other conditions than the various  
conditions mentioned will cause oscillation instability etc. Please contact our technical service department if any conditions  
are changed.  
7)Setting of schottky diode in the output part  
Please use a schottky diode with an allowable current more than ILpeak for the output part. Furthermore, it is necessary that  
the maximum reverse voltage is more than output voltage. Generally speaking, more lower the forward voltage, the higher  
the efficiency.  
8)Setting of UVLO voltage  
The VULO release voltage VUVLO can be set according to the following formula:  
VUVLO=1+R2/R1(R1=GND-side resistance R2=VBAT-side resistance)  
If you want to make the start-up of the IC to lag behind the rising edge of VBAT, connect a capacitor to the UVLOSET  
terminal and set the time constant.  
9) Setting of oscillating frequency  
Oscillating frequency can be adjusted by a resistor connected to the RT terminal.  
The CH1 oscillating frequency fosc1 is determined by the formula shown below:  
fosc1=1/(8×10-12×RRT+4×10-8)  
The frequency calculated by the formula shown above is a theoretical value, so please refer to the above-mentioned  
reference dataRT resistance vs. CH1 switching frequency characteristicfor actual frequency.  
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2010.03 - Rev.A  
10/16  
Technical Note  
BD9862MUV  
Operating Guidelines  
PWM terminal  
At Low the PFM mode skips the pulse of less than 7% On Duty. It is also switched over to the PWM mode if a certain  
amount of load is reached or exceeded while in PFM mode. Moreover, it is switched to PFM mode if the load becomes  
light. Please set the PWM terminal to High and use as the forced PWM mode if there is an influence of noise created by  
modulation of the switching frequency.  
SCP Function  
In case of circuit stoppage due to SCP, the protection is released by setting the UVLOSET voltage to L and the VBATT to  
OFF.  
CH2 adding charge pump  
Please set the Vo2 so that the VIN2A+VIN2B become not more than 15V because the voltage that is the sum of the VIN2A  
voltage plus the VIN2B voltage is applied.  
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2010.03 - Rev.A  
11/16  
Technical Note  
BD9862MUV  
Sample of Recommended Circuit  
1) Sample of Input voltage 1.8V~4.5V application  
Vin=  
1.8~ 4.5V  
CflyS  
0.22uF  
CN  
CP  
VBAT  
CPOUT  
Regulated  
Charge  
Pump  
CCPOUT  
2.2uF  
L1  
REGOUT  
VREG  
LX  
CREGOUT  
2.2uF  
D1  
COUT1  
10uF  
step-up  
DC-DC  
VREF  
RT  
300pF  
1kO  
200kO  
VREF  
OSC  
PGND1  
INV1  
680pF  
12kO  
22kO  
FB1  
120kO  
VIN2A  
VIN2B  
VBAT or REGOUT  
ADD  
Charge  
Pump  
PWM  
H:PWM  
L:PFM  
PWM or PFM  
Control  
C2P  
C2N  
VO2  
Cfly2  
0.047uF  
COUT2  
2.2uF  
2.2MO  
200kO  
GND  
INV2  
Thermal Shut  
Down  
VIN3  
C3P  
X-1  
Charge  
Pump  
Short Circuit  
Protection  
Cfly3  
0.047uF  
COUT3  
2.2uF  
D3  
100kO  
Soft Start  
UVLO  
NON3  
91kO  
20kO  
UVLOSET  
110kO  
PGND2  
Fig.23  
Recommended Parts  
L1  
D1  
D3  
: NR4010T4R7M(TAIYO YUDEN)  
: RB161VA-20(ROHM)  
: DAN217U(ROHM)  
CCPOUT  
CREGOUT  
: GRM188B30J225KE18(MURATA)  
: GRM155B30J105KE18 (MURATA)  
COUT2, COUT3 : GRM188B31C225KE14D(MURATA)  
COUT1 : GRM31CB31C106KA88(MURATA)  
Cflys  
Cfly2, Cfly3  
: GRM155B10J224KE01(MURATA)  
: GRM155B11C473KA01(MURATA)  
CIN  
: GRM219B30J106KE18(MURATA)  
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2010.03 - Rev.A  
12/16  
© 2010 ROHM Co., Ltd. All rights reserved.  
Technical Note  
BD9862MUV  
2) Sample of Input voltage 4.5V~5.5V application  
Vin=  
4.5~ 5.5V  
CN  
CP  
VBAT  
CPOUT  
Regulated  
Charge  
Pump  
L1  
REGOUT  
VREG  
LX  
CREGOUT  
2.2uF  
D1  
COUT1  
10uF  
step-up  
DC-DC  
VREF  
RT  
300pF  
1kO  
200kO  
VREF  
OSC  
PGND1  
INV1  
680pF  
12kO  
22kO  
FB1  
120kO  
VIN2A  
VIN2B  
VBAT or REGOUT  
ADD  
Charge  
Pump  
PWM  
H:PWM  
L:PFM  
PWM or PFM  
Control  
C2P  
C2N  
VO2  
Cfly2  
0.047uF  
COUT2  
2.2uF  
2.2MO  
200kO  
GND  
INV2  
Thermal Shut  
Down  
VIN3  
C3P  
X-1  
Charge  
Pump  
Short Circuit  
Protection  
Cfly3  
0.047uF  
COUT3  
2.2uF  
D3  
100kO  
Soft Start  
UVLO  
NON3  
300kO  
20kO  
UVLOSET  
100kO  
PGND2  
Fig.24  
Recommended Parts  
L1  
D1  
D3  
: NR4010T4R7M(TAIYO YUDEN)  
: RB161VA-20(ROHM)  
: DAN217U(ROHM)  
CCPOUT  
CREGOUT  
:
:
GRM188B30J225KE18(MURATA)  
GRM155B30J105KE18(MURATA)  
COUT2, COUT3 : GRM188B31C225KE14D(MURATA)  
COUT1 : GRM31CB31C106KA88(MURATA)  
Cflys  
Cfly2, Cfly3  
:
:
GRM155B10J224KE01(MURATA)  
GRM155B11C473KA01(MURATA)  
CIN  
: GRM219B30J106KE18(MURATA)  
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2010.03 - Rev.A  
13/16  
© 2010 ROHM Co., Ltd. All rights reserved.  
Technical Note  
BD9862MUV  
Input / Output Equivalent Circuit  
LX  
INV1, INV2, NON3  
FB1  
UVLOSET  
REGOUT  
VBAT  
REGOUT  
LX  
INV1,2  
NON3  
UVLOSET  
FB1  
CN  
CP, CPOUT  
REGOUT  
PWM  
CPOUT  
VBAT  
REGOUT  
CPOUT  
REGOUT  
PWM  
CP  
CN  
VBAT  
RT, VREF  
VIN2A, C2N  
VIN2B  
VO2, C2P  
VIN2A  
REGOUT  
Vo2  
VIN2B  
C2N  
C2P  
RT,VREF  
VIN3, C3P  
VIN3  
C3P  
Fig.25 Input / Output Equivalent Circuit  
Points for attention on PCB layout  
Place the resistors and capacitors, that are connected to RT, INV1, FB1, INV2, NON3 and VREF, close to the terminals to  
avoid being affected by the wirings, where switching is large, such as LX1 wiring and flying capacitor wiring etc.  
Place the inductor, schottky diode and flying capacitor close to the IC.  
Mount in such a way that the back side of the package serves as the GND potential which covers the largest space in the  
PCB. Heat dissipation performance is improved.  
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2010.03 - Rev.A  
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Technical Note  
BD9862MUV  
Notes for Use  
1.) Absolute maximum ratings  
This is a high quality product, but if absolute maximum rating such as applied voltage and operating temperature range is  
exceeded, then deterioration or breakdown may result. Moreover, such destructive conditions as short mode or open  
mode can not be assumed. If a particular mode such as exceeding the absolute maximum rating is assumed,  
consideration should be given to using physical safety measures such as a fuse.  
2.) CND Potential  
The electric potential of the GND pin should be the lowest electric potential under any operating state.  
In addition, (including transient phenomenon), do not make the electrical potential of any pin lower than the GND’s.  
3.) Thermal design  
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.  
4.) Inter-pin shorts and mounting errors  
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in  
damage to the IC.  
In addition, shorts between output pins or between output pins and the power supply GND pin caused by the presence of a  
foreign object may result in damage to the IC.  
5.) Operation in a strong electromagnetic field  
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to  
malfunction.  
6.) Common impedance  
Power supply and GND wiring should reflect consideration of the need to minimize ripples as much as possible., (which  
lower common impedance), by making wiring as short and thick as possible or incorporating inductance and capacitance.  
7.) Thermal shutdown circuit (TSD circuit)  
This IC incorporates a built-in thermal shutdown circuit (TSD circuit). The TSD circuit is designed not for the purpose of  
protection & guarantee of the IC, but only to shut the IC off to prevent thermal overload. Therefore, do not use the IC on  
the premise that this TSD circuit will be operated to shut the IC off (or the IC will be continued to be used after this TSD  
circuit is operated to shut the IC off).  
8.) IC pin input  
This monolithic IC contains the P+ isolation between adjacent elements in order to keep them isolated from the P  
substrate. Due to this P layer and the N layer of each element, the P/N junctions are formed and various kinds of elements  
are created.  
For example, if a resistor and a transistor are connected with pins as shown in the Fig., then:  
the P/N junction functions as a parasitic diode when  
GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN).  
Moreover, when GND > (Pin B) for the transistor (NPN),  
the parasitic NPN transistor is operated by N layer of other elements adjacent to the above-mentioned parasitic diode.  
The formation of parasitic elements as a result of the relationships of electric potentials is an inevitable result of the IC's  
architecture. The operation of parasitic elements can cause interference with the circuit operation as well as IC  
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will  
trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage  
to input pins.  
Transistor (NPN)  
B
C
Resistance  
(Terminal B)  
(Terminal A)  
E
(Terminal A)  
GND  
GND  
N
P+  
P+  
P+  
P+  
P
P
Parasitic Element  
N
N
N
N
N
N
Parasitic Element  
P Substrate  
P Substrate  
GND  
Parasitic Element  
Fig.26 Simple Structure of monolithic IC (Sample)  
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Technical Note  
BD9862MUV  
Ordering Part Number  
B D  
9
8
6
2
M U V - E  
2
Part No.  
Part No.  
Package  
MUV: VQFN024V4040  
Packaging and forming specification  
E2: Embossed tape and reel  
VQFN024V4040  
<Tape and Reel information>  
4.0 0.1  
Tape  
Embossed carrier tape  
2500pcs  
Quantity  
E2  
Direction  
of feed  
1PIN MARK  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
S
(
)
0.08  
S
2.4 0.1  
C0.2  
24  
1
6
7
12  
19  
18  
13  
0.75  
+0.05  
0.25  
-0.04  
Direction of feed  
1pin  
0.5  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
(Unit : mm)  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.03 - Rev.A  
16/16  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
R1010  
A
配单直通车
BD9862MUV-E2产品参数
型号:BD9862MUV-E2
是否无铅:不含铅
是否Rohs认证:符合
生命周期:Active
IHS 制造商:ROHM CO LTD
零件包装代码:QFN
包装说明:HVQCCN, LCC24,.16SQ,20
针数:24
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8542.39.00.01
风险等级:0.83
Is Samacsys:N
可调阈值:NO
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:S-XQCC-N24
长度:4 mm
信道数量:3
功能数量:1
端子数量:24
最高工作温度:85 °C
最低工作温度:-40 °C
封装主体材料:UNSPECIFIED
封装代码:HVQCCN
封装等效代码:LCC24,.16SQ,20
封装形状:SQUARE
封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5 V
认证状态:Not Qualified
座面最大高度:1 mm
子类别:Power Management Circuits
最大供电电压 (Vsup):4.5 V
最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V
表面贴装:YES
温度等级:INDUSTRIAL
端子形式:NO LEAD
端子节距:0.5 mm
端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4 mm
Base Number Matches:1
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