BDX33B BDX33C BDX34B BDX34C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
1.78
oC/W
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
BDX33B/34B
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off Current
(IE = 0)
for
VCB = 80 V
0.2
0.2
mA
mA
for BDX33C/34C VCB = 100V
o
Tcase = 100 C
for BDX33B/34B VCB = 80 V
5
5
mA
mA
for BDX33C/34C
VCB = 100 V
BDX33B/34B
ICEO
Collector Cut-off Current
(IB = 0)
for
VCE = 40 V
VCE = 50V
0.5
0.5
mA
mA
for BDX33C/34C
o
Tcase = 100 C
for BDX33B/34B
VCE = 40 V
VCE = 50 V
10
10
mA
mA
BDX33C/34C
for
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
5
mA
VCEO(sus) Collector-Emitter Sustaining
Voltage (IB = 0)
IC =100 mA for BDX33B/34B
for BDX33C/34C
80
100
V
V
VCER(sus) Collector-emitter Sustaining
IC = 100 mA for BDX33B/34B
80
100
V
V
BDX33C/34C
for
Voltage (RBE =100 Ω)
VCEV(sus) Collector-emitter Sustaining
Voltage (VBE =-1.5 V)
IC = 100 mA for BDX33B/34B
80
100
V
V
BDX33C/34C
for
VCE(sat)
Collector-emitter Saturation
Voltage
IC = 3 A
IB = 6 mA
2.5
2.5
V
VBE
hFE
VF
Base-emitter Voltage
DC Current Gain
IC = 3 A
IC = 3 A
IF = 8 A
VCE = 3 V
VCE = 3 V
V
V
V
750
100
Parallel-Diode Forward
Voltage
4
hfe
Small Signal Current Gain
IC = 1 A VCE = 5 V f = 1MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
2/4