BFP620L现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

BFP620

NPN Silicon Germanium RF Transistor

• Highly linear low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Based on Infineon's reliable high volume

SiGe:C technology

3

2

1

4

• Ideal for CDMA and WLAN applications

• Collector design provides high linearity of

14.5 dBm OP1dB for low voltage application

• Maximum stable gain

G

= 21.5 dB at 1.8 GHz

= 11 dB at 6 GHz

ms

G

ma

• Outstanding noise figure NF

= 0.7 dB at 1.8 GHz

= 1.3 dB at 6 GHz

min

Outstanding noise figure NF

min

• Accurate SPICE GP model enables effective

design in process

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP620

Marking

R2s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

-

1

2010-09-21

BFP620

Maximum Ratings

Parameter

Symbol

Value

Unit

V

Collector-emitter voltage

V

CEO

T > 0 °C

2.3

2.1

7.5

1.2

80

A

T ≤ 0 °C

A

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

V

CES

CBO

EBO

mA

mW

°C

I

C

3

185

Base current

Total power dissipation

I

B

1)

P

tot

T ≤ 95 °C

S

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

T

J

T

A

T

Stg

1

T is measured on the emitter lead at the soldering point to pcb

S

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 300

Unit

K/W

1)

R

thJS

Electrical Characteristics at T = 25°C, unless otherwise specified

A

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

2.3

2.8

-

V

Collector-emitter breakdown voltage

V

(BR)CEO

I = 1 mA, I = 0

C

B

µA

Collector-emitter cutoff current

I

CES

V

= 7.5 V, V = 0

-

10

CE

BE

= 5 V, V = 0

0.001 0.04

BE

1

40

nA

-

Collector-base cutoff current

= 5 V, I = 0

I

CBO

V

CB

E

-

10

900

270

Emitter-base cutoff current

= 0.5 V, I = 0

I

EBO

V

EB

C

110

180

DC current gain

I = 50 mA, V = 1.5 V, pulse measured

h

FE

C

CE

1

For calculation of R

please refer to Application Note AN077 Thermal Resistance

thJA

2

2010-09-21

BFP620

Electrical Characteristics at T = 25°C, unless otherwise specified

A

Parameter

Symbol

Values

typ. max.

Unit

min.

AC Characteristics (verified by random sampling)

Transition frequency

-

65

-

GHz

f

T

I = 50 mA, V = 1.5 V, f = 1 GHz

C

CE

-

0.12

0.2 pF

Collector-base capacitance

= 2 V, f = 1 MHz, V = 0 ,

emitter grounded

C

cb

ce

eb

V

CB

BE

0.22

0.46

-

Collector emitter capacitance

V

= 2 V, f = 1 MHz, V = 0 ,

CE

BE

base grounded

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz, V = 0 ,

EB

CB

collector grounded

dB

Minimum noise figure

NF

min

I = 5 mA, V = 1.5 V, f=1.8GHz Z = Z

-

0.7

1.3

-

C

CE

S

Sopt

I = 5 mA, V = 1.5 V, f= 6GHz Z = Z

C

CE

S

Sopt

1)

Power gain, maximum stable

I = 50 mA, V = 1.5 V, f = 1.8GHz ,

G

-

21.5

-

dB

ms

C

CE

Z = Z

, Z = Z

S

Sopt

L Lopt

-

11

-

Power gain, maximum available

I = 50 mA, V = 1.5 V, f = 6 GHz,

ma

C

CE

Z = Z

, Z = Z

S

Sopt

L Lopt

2

Transducer gain

|S

|

dB

21e

I = 50 mA, V =1.5 V, Z =Z =50 Ω

C

CE

S

L

f = 1.8 GHz

f = 6 GHz

-

20

9.5

-

2)

Third order intercept point at output

= 2 V, I = 50 mA, Z =Z =50 Ω, f=1.8GHz

IP

-

25.5

-

dBm

3

V

CE

C

S

L

1dB compression point at output

I = 50 mA, V = 2 V, Z =Z =50 Ω, f=1.8 GHz

P

-1dB

-

14.5

-

C

CE

S

L

1

G

= |S / S |

21 12

ms

2

IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

3

2010-09-21

BFP620

Total power dissipation P = ƒ(T )

Permissible Pulse Load R

= ƒ(t )

tot

S

thJS

p

10 ³

200

mW

160

140

120

100

80

K/W

D = 0.5

0.2

10 ²

0.1

0.05

0.02

0.01

0.005

0

60

40

20

10 ¹

0

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

°C

0

20

40

60

80

100 120

150

T

t

p

S

Permissible Pulse Load

Collector-base capacitance C = ƒ(V )

cb

CB

P

/P

= ƒ(t )

f = 1MHz

totmax totDC

p

10 ¹

0.4

pF

0.3

0.25

0.2

D = 0

0.005

0,01

0,02

0,05

0,1

0.15

0.1

0,2

0,5

0.05

10 ⁰

0

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

1

2

3

4

5

7

°C

V

t

V

CB

p

4

2010-09-21

BFP620

Third order Intercept Point IP =ƒ(I )

Third order Intercept Point IP = ƒ(I )

3 C

3

C

(Output, Z = Z =50 Ω)

(Output, Z = Z = 50 Ω )

S

L

S L

V

= parameter, f = 900MHz

V

= parameter, f = parameter

CE

27

2.3V

1.8V

dBm

21

18

15

12

9

1.3V

0.8V

6

3

0

mA

0

10 20 30 40 50 60 70 80

100

I

C

Transition frequency f = ƒ(I )

ƒ = 1 GHz

Power gain G , G = ƒ(f)

ma ms

T

C

2

|S | = ƒ (f)

21

V

= parameter in V

V

= 1.5 V, I = 50 mA

CE

C

55

65

GHz

dB

55

50

45

40

35

30

25

20

15

10

5

1.3 to 2.3

1

45

40

35

30

25

20

15

10

5

Gms

0.8

0.5

Gma

|S21|²

0.3

0

mA

GHz

0

10 20 30 40 50 60 70 80

100

0

1

2

3

4

6

I

f

C

5

2010-09-21

BFP620

Power gain G , G = ƒ(I )

Power gain G , G = ƒ(V )

ma ms CE

ma

ms

C

V

= 1.5V

I = 50 mA

CE

C

f = parameter in GHz

30

dB

0.9

1.8

dB

0.9

1.8

26

24

22

20

18

16

14

12

10

8

2.4

3

20

15

10

5

4

5

6

2.4

3

4

5

6

0

-5

mA

V

0

10 20 30 40 50 60 70

90

0.2

0.6

1

1.4

1.8

2.6

I

V

CE

C

Minimum noise figure NF

= ƒ(I )

Minimum noise figure NF

= ƒ(f)

min

C

min

V

= 2 V, Z = Z

V

= 2 V, Z = Z

CE

S

Sopt

CE S Sopt

6

2010-09-21

BFP620

Source impedance for min.

noise figure vs. frequency

V

= 2 V, I = 6 mA / 50 mA

CE

C

7

2010-09-21

BFP620

SPICE GP (Gummel-Poon)

For the SPICE Gummel Poon (GP) model as well as for the S-parameters

(including noise parameters) please refer to our internet website

www.infineon.com/rf.models.

Please consult our website and download the latest versions before actually

starting your design. You find the BFP620 SPICE GP model in the internet

in MWO- and ADS-format, which you can import into these circuit simulation tools

very quickly and conveniently. The model already contains the package parasitics

and is ready to use for DC and high frequency simulations. The terminals of the

model circuit correspond to the pin configuration of the device. The model

parameters have been extracted and verified up to 10 GHz using typical devices.

The BFP620 SPICE GP model reflects the typical DC- and RF-performance

within the limitations which are given by the SPICE GP model itself. Besides the DC

characteristics all S-parameters in magnitude and phase, as well as noise figure

(including optimum source impedance, equivalent noise resistance and flicker noise)

and intermodulation have been extracted.

8

2010-09-21

Package SOT343

BFP620

Package Outline

0.1

0.9

0.2

2

0.1 MAX.

0.1

1.3

A

4

1

3

2

0.15

+0.1

-0.05

0.3

0.15

-0.05

+0.1

0.6

4x

-0.05

M

0.2

A

M

0.1

Foot Print

0.6

1.15

0.9

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

BGA420

Type code

Pin 1

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

4

2.15

Pin 1

1.1

9

2010-09-21

BFP620

Datasheet Revision History: 21 September 2010

This datasheet replaces the revision from 20 April 2007.

The product itself has not been changed and the device characteristics remain unchanged.

Only the product description and information available in the datasheet has been expanded

and updated.

Previous Revision 20 April 2007

Page

Subject (changes since last revision)

2

Typical values for leakage currents included, values for maximum leakage

currents reduced

5

7

@ 2400 MHz OIP3 curves added

charts added describing noise figure

10

2010-09-21

BFP620

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.

11

2010-09-21

型号:	BFP620_E6327
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	INFINEON TECHNOLOGIES AG
零件包装代码：	SOT
包装说明：	SOT-343, 4 PIN
针数：	4
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.74
其他特性：	LOW NOISE
外壳连接：	EMITTER
最大集电极电流 (IC)：	0.08 A
基于收集器的最大容量：	0.2 pF
集电极-发射极最大电压：	2.3 V
配置：	SINGLE
最小直流电流增益 (hFE)：	110
最高频带：	C BAND
JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	1
端子数量：	4
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.185 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM
标称过渡频率 (fT)：	65000 MHz
Base Number Matches：	1

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