BFP720芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

BFP720

SiGe:C Heterojunction Wideband RF Bipolar Transistor

Data Sheet

Revision 1.0, 2009-01-20

RF & Protection Devices

Edition 2009-01-20

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

BFP720

BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor

Revision History: 2009-01-20, Revision 1.0

Previous Revision:

Page

Subjects (major changes since last revision)

Converted to the new IFX Template.

Business Unit, Infineon Logo and the Trademarks were changed.

Trademarks of Infineon Technologies AG

A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™,

CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™,

EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™,

EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™,

HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™,

MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™,

OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™,

SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™,

SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™,

TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™,

X-PMU™, XPOSYS™, XWAY™.

Other Trademarks

AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is

licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.

COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of

Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.

HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of

Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION.

MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of

Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc.,

USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc.

Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of

Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™

of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™

of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™,

PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™,

WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last Trademarks Update 2009-10-19

Data Sheet

3

Revision 1.0, 2009-01-20

BFP720

Table of Contents

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

1

2

3

4

5

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5.1

5.2

5.3

5.4

6

7

Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Data Sheet

4

Revision 1.0, 2009-01-20

BFP720

List of Figures

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Total Power Dissipation P_tot= f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Permissible Pulse Load P_{tot_max}/ P_{tot_DC}= f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Permissible Pulse Load R_thJS= f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BFP720 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Transition Frequency f_T= f (I_C, V_CE) f = 1 GHz, V_CEParameter in V . . . . . . . . . . . . . . . . . . . . . . . 19

Power Gain G_ma, G_ms, IS₂₁I² = f (f) V_CE= 3 V, I_C= 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Input Matching S₁₁vs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Output Matching S₂₂vs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . . . . 20

Source Impedance Z_optfor NF_minvs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA. . . . . . . . . . . . . . . 21

Figure 10 Noise Figure NF_min= f (I_C) V_CE= 3 V, Z_S= Z_opt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 11 Noise Figure NF_min= f (f) V_CE= 3 V, Z_S= Z_op. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 12 Power Gain G_ma, G_ms= f (I_C) V_CE= 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 13 Power Gain G_ma, G_ms= f (V_CE) I_C= 13 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 14 Package Outline SOT343 (top / side view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 15 Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 16 Marking Example (Marking BFP720: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 17 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Data Sheet

5

Revision 1.0, 2009-01-20

BFP720

List of Tables

Table 1

Table 2

Table 3

Table 4

Table 5

Table 6

Table 7

Table 8

Table 9

Table 10

Table 11

Table 12

Table 13

Table 14

Table 15

Quick Reference DC Characteristics at T_A= 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Quick Reference AC Characteristics at T_A= 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Maximum Ratings (T_A= 25 °C unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

DC Characteristics at T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

AC Characteristics at T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

AC Characteristics, V_CE= 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

AC Characteristics, V_CE= 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

AC Characteristics, V_CE= 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

AC Characteristics, V_CE= 3 V, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

AC Characteristics, V_CE= 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

AC Characteristics, V_CE= 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

AC Characteristics, V_CE= 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

AC Characteristics, V_CE= 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

AC Characteristics, V_CE= 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Data Sheet

6

Revision 1.0, 2009-01-20

SiGe:C Heterojunction Wideband RF Bipolar Transistor

BFP720

1

Features

Main features:

•

High performance general purpose wideband LNA transistor

150 GHz f_T-Silicon Germanium Carbon technology

Enables Best-In-Class performance for wireless applications due to

high dynamic range

Transistor geometry optimized for low-current applications

Operation voltage: 1.0 V to 4.0 V

Very high gain at high frequencies and low current consumption

26 dB maximum stable gain at 1.9 GHz and only 13 mA

15 dB maximum available gain at 10 GHz and only 13 mA

Ultra low noise figure from latest SiGe:C technology

0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz

3

2

4

1

•

High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA

Pb-free (RoHS compliant) package

Application

FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone,

UMTS, WLAN, UWB, LNB

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Product Name Package

Pin Configuration

Marking

BFP720

SOT343

1 = B

2 = E

3 = C

4 = E

R9s

Data Sheet

7

Revision 1.0, 2009-01-20

BFP720

Product Brief

2

Product Brief

The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in

a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low

operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable

battery-powered applications in which reduced power consumption is a key requirement. Collector design

supports operation voltages from 1.0 V to 4.0 V.

Table 1

Quick Reference DC Characteristics at T_A= 25°C

Symbol Values

Parameter

Unit Note / Test Condition

Min.

4

Typ.

4.7

15

–

Max.

–

Collector-emitter breakdown voltage V_(BR)CEO

V

I_C= 1 mA, I_B= 0 mA

I_E= 0 mA

Collector-base breakdown voltage

Collector current

V_(BR)CBO

I_C

13

–

V

25

mA

Total power dissipation

DC current gain

P_tot

–

100

400

mW T_S≤ 108 °C

h_FE

160

250

V

_CE= 3 V, I_C= 13 mA

Data Sheet

8

Revision 1.0, 2009-01-20

BFP720

Product Brief

Table 2

Quick Reference AC Characteristics at T_A= 25°C

Parameter

Symbol

Values

Unit Note / Test Condition

Min.

Typ.

Max.

Transition frequency

f_T

–

45

–

GHz

dB

V_CE= 3 V, I_C= 13 mA

f = 2.4 GHz

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

G_ms

22

25

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

20.5

23

Minimum Noise Figure

Associated Gain

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.5

21.5

Linearity

1 dB Gain Compression Point

3^rdOrder Intercept Point

dBm Z_S= Z_L= 50 Ω

I_C= 13 mA

OP_1dB

OIP₃

6

22

I_C= 13 mA

f = 5.5 GHz

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

G_ma

19

19.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

15

16

Minimum Noise Figure

Associated Gain

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.7

15

Linearity

1 dB Gain Compression Point

3^rdOrder Intercept Point

dBm Z_S= Z_L= 50 Ω

I_C= 13 mA

OP_1dB

OIP₃

8.5

23

I_C= 13 mA

Data Sheet

9

Revision 1.0, 2009-01-20

BFP720

Maximum Ratings

3

Maximum Ratings

Table 3

Maximum Ratings (T_A= 25 °C unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit

Note / Test Condition

Min.

Max.

4.0

3.5

13

Collector-emitter voltage

T_A= -55 °C

V_CEO

–

V

–

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

V_CES

V_CBO

V_EBO

I_C

–

V

–

13

V

1.2

25

V

mA

mW

Base current

Total power dissipation¹⁾

I_B

2

P_tot

100

T_S≤ 108 °C

Operation junction temperature T_JOp

-55

–

150

°C

–

Storage temperature T_Stg

1) T_Smeasured on the emitter lead at the soldering point of the pcb

Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent

damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened.

Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at

others than standard operation conditions.

Data Sheet

10

Revision 1.0, 2009-01-20

BFP720

Thermal Characteristics

4

Thermal Characteristics

Table 4

Thermal Resistance

Symbol

Parameter

Value

Unit

Junction - soldering point¹⁾

R_thJS

420

K/W

1)For calculation of R_thJAplease refer to Application Note Thermal Resistance

120

100

80

60

40

20

0

50

100

150

Ts [°C]

Figure 1

Total Power Dissipation P_tot= f (T_s)

Data Sheet

11

Revision 1.0, 2009-01-20

BFP720

Thermal Characteristics

10

D= 0

D= .005

D= .01

D= .02

D= .05

D= .1

D= .2

D=0

D= .5

D=0.5

1

tp [sec]

Figure 2

Permissible Pulse Load P_{tot_max}/ P_{tot_DC}= f (tp)

1000

D=0.5

D= .5

D= .2

D= .1

D= .05

D= .02

D= .01

D= .005

D= 0

D=0

100

tp [sec]

Figure 3

Permissible Pulse Load R_thJS= f (tp)

Data Sheet

12

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

5

Electrical Characteristics

5.1

DC Characteristics

Table 5

DC Characteristics at T_A= 25 °C

Parameter

Symbol

Values

Unit Note / Test Condition

Min.

4

Typ.

4.7

–

Max.

–

Collector-emitter breakdown voltage V_(BR)CEO

V

I_C= 1 mA, I_B= 0 mA

Collector-emitter cutoff current

Collector-base cutoff current

Emitter-base cutoff current

DC current gain

I_CES

I_CBO

I_EBO

h_FE

–

30

μA

nA

μA

V

_CE= 13 V, V_BE= 0 V

_CB= 5 V, I_E= 0 mA

_EB= 0.5 V, I_C= 0 mA

–

100

2

–

160

250

400

I_C= 13 mA, V_CE= 3 V

pulse measured

5.2

General AC Characteristics

Table 6

AC Characteristics at T_A= 25 °C

Parameter

Symbol

Values

Typ.

45

Unit Note / Test Condition

Min.

Max.

Transition frequency

f_T

–

GHz I_C= 13 mA, V_CE= 3 V

f = 1 GHz

Collector-base capacitance

C_cb

–

0.06

0.35

–

pF

V_CB= 3 V, V_BE= 0 V

f = 1 MHz

emitter grounded

Collector-emitter capacitance

Emitter-base capacitance

C_ce

C_eb

V_CE= 3 V, V_BE= 0 V

f = 1 MHz

base grounded

V

_EB= 0.5 V, V_CB= 0 V

f = 1 MHz

collector grounded

Data Sheet

13

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

5.3

Frequency Dependent AC Characteristics

Measurement setup is a testfixture with Bias T’s in a 50 Ω system, T_A= 25 °C

VC

Top View

Bias -T

OUT

E

C

E

VB

B

Bias-T

(Pin 1)

IN

Figure 4

BFP720 Testing Circuit

Table 7

AC Characteristics, V_CE= 3 V, f = 150 MHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

34

37.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

23

29.5

Minimum Noise Figure

Associated Gain

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.4

28.5

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3rd Order Intercept Point

OP_1dB

OIP₃

6

22

Data Sheet

14

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Table 8

AC Characteristics, V_CE= 3 V, f = 450 MHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

29

32.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

23

28.5

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.4

28

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

5.5

21.5

Table 9

AC Characteristics, V_CE= 3 V, f = 900 MHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

26.5

29.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

22.5

27.5

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.4

26

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

5.5

21

Data Sheet

15

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Table 10

AC Characteristics, V_CE= 3 V, f = 1500 MHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

24

27.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

22

25.5

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.45

24

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

6

21.5

Table 11

AC Characteristics, V_CE= 3 V, f = 1.9 GHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

23

26

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

21.5

24.5

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.45

23

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

7

22

Data Sheet

16

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Table 12

AC Characteristics, V_CE= 3 V, f = 2.4 GHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

22

25

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

20.5

23

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.5

21.5

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

6

22

Table 13

AC Characteristics, V_CE= 3 V, f = 3.5 GHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

20.5

23.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

18.5

20

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.55

19

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

7.5

22.5

Data Sheet

17

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Table 14

AC Characteristics, V_CE= 3 V, f = 5.5 GHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ms

G_ma

19

19.5

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

15

16

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.7

15

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

8.5

23

Table 15

AC Characteristics, V_CE= 3 V, f = 10 GHz

Parameter

Symbol

Min.

Values

Typ.

Unit

Note / Test Condition

Max.

Maximum Power Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

G_ma

13.5

15

I_C= 5 mA

I_C= 13 mA

Transducer Gain

Low Noise Operation Point

High Linearity Operation Point

–

dB

Z_S= Z_L= 50 Ω

I_C= 5 mA

I_C= 13 mA

S₂₁

9

10

Minimum Noise Figure

Associated Gain

dB

Z_S= Z_opt

I_C= 5 mA

NF_min

G_ass

0.95

10.5

Linearity

dBm

Z_S= Z_L= 50 Ω

I_C= 13 mA

1 dB Gain Compression Point

3^rdOrder Intercept Point

OP_1dB

OIP₃

8

19.5

Notes

1. G_ms= IS₂₁/ S₁₂I for k < 1; G_ma= IS₂₁/ S₁₂I(k-(k²-1)^1/2) for k > 1

2. In order to get the NF_minvalues stated in this chapter the test fixture losses have been subtracted from all

measured results

Data Sheet

18

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

5.4

Characteristic Curves

50

45

40

35

30

25

20

15

10

5

3 V

2 V

1 V

0.5 V

0

1

10

100

Ic [mA]

Figure 5

Transition Frequency f_T= f (I_C, V_CE) f = 1 GHz, V_CEParameter in V

42

39

36

33

30

G_ms

27

24

21

G_ma

18

2

|S₂₁|

15

12

9

6

0

1

2

3

4

5

6

7

8

9

10

f [GHz]

Figure 6

Power Gain G_ma, G_ms, IS₂₁I² = f (f) V_CE= 3 V, I_C= 13 mA

Data Sheet

19

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Swp Max

10GHz

10 GHz

8 GHz

10 GHz

9 GHz

8 GHz

7 GHz

S11 @3V, 5mA

S11 @3V, 13mA

7 GHz

6 GHz

5 GHz

6 GHz

5 GHz

4 GHz

3 GHz

4 GHz

2 GHz

1 GHz

3 GHz

1 GHz

2 GHz

Swp Min

0GHz

Figure 7

Input Matching S₁₁vs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA

Swp Max

10GHz

S22 @3V, 5mA

10 GHz

S22 @3V, 13mA

9 GHz

8 GHz

9 GHz

7 GHz

6 GHz

8 GHz

5 GHz

4 GHz

3 GHz

7 GHz

6 GHz

5 GHz

2 GHz

1 GHz

4 GHz

3 GHz

2 GHz

Swp Min

0GHz

Figure 8

Output Matching S₂₂vs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA

Data Sheet

20

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

Swp Max

10GHz

2.4GHz

5.5GHz

1.9GHz

2.4GHz

1.9GHz

0.45GHz

5.5GHz

Δ: Ic = 13mA

: Ic = 5mA

10GHz

Swp Min

0.45GHz

Figure 9

Source Impedance Z_optfor NF_minvs. Frequency V_CE= 3 V, I_C= 5 mA / 13 mA

2

1.9

f = 10GHz

f = 5.5GHz

f = 2.4GHz

f = 1.9GHz

f = 0.45GHz

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

2

4

6

8

10

12

14

16

18

20

I_c[mA]

Figure 10 Noise Figure NF_min= f (I_C) V_CE= 3 V, Z_S= Z_opt

Data Sheet

21

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

I_C

= 13mA

I_C= 5.0mA

0

1

2

3

4

5

6

7

8

9

10

f [GHz]

Figure 11 Noise Figure NF_min= f (f) V_CE= 3 V, Z_S= Z_op

42

40

38

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0.15GHz

0.45GHz

0.90GHz

1.50GHz

1.90GHz

2.40GHz

3.50GHz

5.50GHz

10.00GHz

0

5

10

15

20

25

30

I_C[mA]

Figure 12 Power Gain G_ma, G_ms= f (I_C) V_CE= 3 V, f = Parameter in GHz

Data Sheet

22

Revision 1.0, 2009-01-20

BFP720

Electrical Characteristics

40

38

36

34

32

30

28

26

24

22

20

18

16

14

12

10

8

0.15GHz

0.45GHz

0.90GHz

1.50GHz

1.90GHz

2.40GHz

3.50GHz

5.50GHz

10.00GHz

6

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V_CE[V]

Figure 13 Power Gain G_ma, G_ms= f (V_CE) I_C= 13 mA, f = Parameter in GHz

Note:The curves shown in this chapter have been generated using typical devices but shall not be considered as

a guarantee that all devices have identical characteristic curves.

Data Sheet

23

Revision 1.0, 2009-01-20

BFP720

Simulation Data

6

Simulation Data

For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website:

www.infineon.com/rf.models. Please consult our website and download the latest versions before actually

starting your design.

The simulation data have been generated and verified using typical devices. The BFP720 nonlinear SPICE-model

reflects the typical DC- and RF-device performance with high accuracy.

Data Sheet

24

Revision 1.0, 2009-01-20

BFP720

Package Information

7

Package Information

±0.1

0.9

±0.2

2

0.1 MAX.

0.1

1.3

A

4

3

2

0.15

1

+0.1

0.3

+0.1

-0.05

0.15

-0.05

+0.1

-0.05

0.6

4x

M

0.2

A

M

0.1

SOT343-PO V08

Figure 14 Package Outline SOT343 (top / side view)

0.6

1.15

0.9

SOT343-FP V08

Figure 15 Footprint

Figure 16 Marking Example (Marking BFP720: R9s)

0.2

4

2.15

Pin 1

1.1

SOT323-TP V02

Figure 17 Tape Dimensions

Data Sheet

25

Revision 1.0, 2009-01-20

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

型号:	BFP720
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	INFINEON TECHNOLOGIES AG
包装说明：	SMALL OUTLINE, R-PDSO-G4
针数：	4
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.63
外壳连接：	EMITTER
最大集电极电流 (IC)：	0.025 A
集电极-发射极最大电压：	4 V
配置：	SINGLE
最小直流电流增益 (hFE)：	160
最高频带：	X BAND
JESD-30 代码：	R-PDSO-G4
元件数量：	1
端子数量：	4
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.08 W
认证状态：	Not Qualified
子类别：	BIP RF Small Signal
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM CARBON
标称过渡频率 (fT)：	45000 MHz
Base Number Matches：	1

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