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产品型号BFR193FH6327XTSA1的概述

芯片BFR193FH6327XTSA1的概述 BFR193FH6327XTSA1是一款由知名 semiconductor 供应商 Infineon Technologies 开发的高频小信号双极晶体管,广泛应用于各种无线通信和信号放大领域。该芯片以其卓越的性能和灵活的应用前景而受到广泛关注,尤其在需要低噪声和高增益的应用场合中表现尤为突出。 该芯片的设计主要考虑了无线通信的复杂性,尤其是在微波频段的信号处理。BFR193FH6327XTSA1 的频率响应能够满足 2GHz 至 8GHz 的工作频率范围,非常适合用于射频(RF)和微波应用。作为一款高性能的射频器件,它被普遍用于信号放大、混频、振荡器和其他相关电路中。 芯片BFR193FH6327XTSA1的详细参数 BFR193FH6327XTSA1 的关键技术参数如下: - 类型: NPN晶体管 - 最大集电极-基极电压(Vce): ...

产品型号BFR193L3的Datasheet PDF文件预览

BFR193L3  
NPN Silicon RF Transistor*  
For low noise, high-gain amplifiers up to 2 GHz  
For linear broadband amplifiers  
3
1
f = 8 GHz, F = 1 dB at 900 MHz  
2
T
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
BFR193L3  
RC  
TSLP-3-1  
1 = B  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Symbol  
Value  
12  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
20  
2
80  
mA  
mW  
°C  
I
I
C
10  
Base current  
B
1)  
580  
Total power dissipation  
P
tot  
T 95°C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-55 ... 150  
-55 ... 150  
A
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
tbd  
K/W  
Junction - soldering point  
1
R
thJS  
T is measured on the collector lead at the soldering point to the pcb  
S
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
2005-09-23  
1
BFR193L3  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
12  
-
-
-
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0  
C
B
-
100 µA  
100 nA  
Collector-emitter cutoff current  
= 20 V, V = 0  
I
CES  
V
CE  
BE  
-
-
-
Collector-base cutoff current  
= 10 V, I = 0  
I
CBO  
V
CB  
E
-
1
µA  
-
Emitter-base cutoff current  
= 1 V, I = 0  
I
EBO  
V
EB  
C
70  
100  
140  
DC current gain-  
I = 30 mA, V = 8 V, pulse measured  
h
FE  
C
CE  
2005-09-23  
2
BFR193L3  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics (verified by random sampling)  
6
8
-
GHz  
Transition frequency  
f
T
I = 50 mA, V = 8 V, f = 500 MHz  
C
CE  
-
-
-
0.63  
0.9 pF  
Collector-base capacitance  
= 10 V, f = 1 MHz, V = 0 ,  
C
C
C
F
cb  
ce  
eb  
V
CB  
BE  
emitter grounded  
0.22  
2.25  
-
-
Collector emitter capacitance  
V
= 10 V, f = 1 MHz, V = 0 ,  
BE  
CE  
base grounded  
Emitter-base capacitance  
V
= 0.5 V, f = 1 MHz, V = 0 ,  
CB  
EB  
collector grounded  
Noise figure  
dB  
I = 10 mA, V = 8 V, Z = Z  
,
C
CE  
S
Sopt  
f = 900 MHz  
-
-
1
-
-
I = 10 mA, V = 8 V, Z = Z  
,
C
CE  
S
Sopt  
f = 1.8 GHz  
1.6  
1)  
Power gain, maximum available  
G
ma  
I = 30 mA, V = 8 V, Z = Z  
,
C
CE  
S
Sopt  
Z = Z  
, f = 900 MHz  
Lopt  
-
-
19  
-
L
I = 30 mA, V = 8 V, Z = Z  
,
C
CE  
S
Sopt  
Z = Z  
, f = 1.8 GHz  
Lopt  
12.5  
-
L
2
Transducer gain  
|S  
|
dB  
21e  
I = 30 mA, V = 8 V, Z = Z = 50,  
C
CE  
S
L
f = 900 MHz  
-
-
14.5  
9
-
-
I = 30 mA, V = 8 V, Z = Z = 50,  
C
CE  
S
L
f = 1.8 GHz  
1/2)  
1
G
= |S / S | (k-(k²-1)  
21 12  
ma  
2005-09-23  
3
BFR193L3  
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):  
Transitor Chip Data:  
0.2738  
24  
fA  
V
-
0.95341  
-
IS =  
BF =  
125  
NF =  
A
-
10.627  
1.4289  
fA  
-
VAF =  
NE =  
IKF =  
BR =  
IKR =  
RB =  
RE =  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
NK =  
FC =  
0.26949  
14.267  
0.037925  
1.8368  
0.76534  
0.70276  
0.69477  
0
ISE =  
NR =  
1.935  
3.8742  
0.94371  
1
-
V
A
0.037409 fA  
VAR =  
NC =  
RBM =  
CJE =  
TF =  
ISC =  
IRB =  
RC =  
-
0.91763  
0.11938  
0.48654  
0.8  
mA  
-
fF  
-
1.1824  
18.828  
0.96893  
1.1828  
1.0037  
0
V
MJE =  
VTF =  
CJC =  
XCJC =  
VJS =  
EG =  
ps  
mA  
V
V
-
deg  
935.03  
0.053563  
0.75  
fF  
-
ITF =  
VJC =  
TR =  
0.30002  
0
-
fF  
ns  
-
V
1.11  
eV  
K
MJS =  
XTI =  
0
-
3
300  
-
0.72063  
TNOM  
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:  
Institut für Mobil- und Satellitentechnik (IMST)  
Package Equivalent Circuit:  
0.575  
0.575  
0.275  
33  
L =  
nH  
nH  
nH  
fF  
1
C4  
L =  
2
L =  
3
C7  
R1  
C1  
C =  
1
28  
C =  
fF  
2
131  
8
C =  
fF  
L 2  
L 3  
3
Transistor  
Chip  
B'  
C'  
B
C
C =  
fF  
4
8
C =  
fF  
5
E'  
24  
C =  
fF  
6
C6  
C5  
300  
204  
C =  
fF  
7
C2  
C3  
R =  
L 1  
1
Valid up to 6GHz  
EHA07536  
E
For examples and ready to use parameters  
please contact your local Infineon Technologies  
distributor or sales office to obtain a Infineon  
Technologies CD-ROM or see Internet:  
http//www.infineon.com/silicondiscretes  
2005-09-23  
4
Package TSLP-3-1  
BFR193L3  
Package Outline  
Top view  
Bottom view  
0.4+0.1  
±0.05  
0.6  
1)  
±0.035  
0.05 MAX.  
0.5  
3
3
1
2
1
2
±0.05  
1)  
0.35  
Pin 1  
marking  
±0.035  
2x0.15  
1) Dimension applies to plated terminal  
Foot Print  
For board assembly information please refer to Infineon website "Packages"  
0.6  
0.45  
R0.1  
0.2  
0.225  
0.2  
0.17  
0.225  
0.15  
Copper  
Solder mask  
Stencil apertures  
Marking Layout  
Type code  
BFR193L3  
Laser marking  
Pin 1  
marking  
Example  
Standard Packing  
Reel ø180 mm = 15.000 Pieces/Reel  
0.5  
4
Pin 1  
marking  
0.76  
2005-09-23  
5
BFR193L3  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
81669 München  
© Infineon Technologies AG 2005.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be  
considered as a guarantee of characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of  
non-infringement, regarding circuits, descriptions and charts stated herein.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.Infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest Infineon  
Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that life-support  
device or system, or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body, or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
2005-09-23  
6
配单直通车
BFR193FH6327XTSA1产品参数
型号:BFR193FH6327XTSA1
是否Rohs认证:符合
生命周期:Active
IHS 制造商:INFINEON TECHNOLOGIES AG
包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:compliant
ECCN代码:EAR99
Factory Lead Time:10 weeks
风险等级:1.57
Samacsys Confidence:3
Samacsys Status:Released
Samacsys PartID:761399
Samacsys Pin Count:3
Samacsys Part Category:Transistor
Samacsys Package Category:SO Transistor Flat Lead
Samacsys Footprint Name:PG-TSFP-3-1
Samacsys Released Date:2020-04-30 07:16:19
Is Samacsys:N
其他特性:LOW NOISE
最大集电极电流 (IC):0.08 A
基于收集器的最大容量:1 pF
集电极-发射极最大电压:12 V
配置:SINGLE
最高频带:L BAND
JESD-30 代码:R-PDSO-F3
JESD-609代码:e3
元件数量:1
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
参考标准:AEC-Q101
表面贴装:YES
端子面层:Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHz
Base Number Matches:1
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