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产品型号BSR17A的概述

芯片BSR17A的概述 BSR17A是一款经过市场验证的高性能双极型功率晶体管，广泛应用于各类电子设备中，特别是在功率放大和开关电源等领域。这款芯片的设计目的在于兼顾高效率和低功耗，适合用于需要高电流和高电压驱动的场景。此外，BSR17A具有优良的热稳定性，可以在较为严苛的环境条件下正常工作。它的广泛适用性使得其成为电子工程师在电路设计时的热门选择。芯片BSR17A的详细参数 BSR17A晶体管的主要参数如下： - 工作电压（V_CE）: 最大集电极-发射极电压为80伏特，使其能够在较高电压下安全工作。 - 最大电流（I_C）: 额定集电极电流为3安培，适合承受较大的负载。 - 增益（h_FE）: 在集电极电流为1A时，直流电流增益可达到80至320，这在驱动负载时提供了较大的放大能力。 - 输入和输出电阻: 输入电阻一般值较高，使得信号源负担更小，而输出电阻则为低值，有助于信号放大...

产品型号BSR17A的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BSR17A

NPN switching transistor

1997 Jun 02

Product speciﬁcation

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

FEATURES

PINNING

• Low current (max. 100 mA)

• Low voltage (max. 40 V).

DESCRIPTION

base

emitter

collector

APPLICATIONS

• Switching and linear amplification.

DESCRIPTION

handbook, halfpage

NPN switching transistor in a SOT23 plastic package.

PNP complement: BSR18A.

MARKING

TYPE NUMBER

BSR17A

MARKING CODE

Top view

MAM255

U92

Fig.1 Simplified outline (SOT23) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

V_CBO

V_CEO

I_C

open emitter

open base

−

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

100

250

300

−

P_tot

h_FE

f_T

T_amb≤ 25 °C

I_C= 10 mA; V_CE= 1 V

100

300

−

transition frequency

turn-off time

I_C= 10 mA; V_CE= 20 V; f = 100 MHz

I_Con= 10 mA; I_Bon= 1 mA; I_Boff= −1 mA

MHz

t_off

240

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

V_CBO

V_CEO

V_EBO

I_C

−

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open base

open collector

100

200

100

250

+150

150

+150

°C

I_CM

I_BM

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C

−65

−

°C

T_amb

−65

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient note 1

500

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

I_E= 0; V_CB= 30 V

MIN. MAX. UNIT

I_CBO

collector cut-off current

−

µA

I_E= 0; V_CB= 30 V; T_j= 150 °C

I_C= 0; V_EB= 6 V

I_EBO

h_FE

emitter cut-off current

DC current gain

V_CE= 1 V; note 1; see Fig.2

I_C= 0.1 mA

100

−

I_C= 1 mA

−

I_C= 10 mA

300

−

I_C= 50 mA

I_C= 100 mA

−

V_CEsat

collector-emitter saturation voltage

base-emitter saturation voltage

I_C= 10 mA; I_B= 1 mA; note 1

I_C= 50 mA; I_B= 5 mA; note 1

I_C= 10 mA; I_B= 1 mA; note 1

I_C= 50 mA; I_B= 5 mA; note 1

I_E= i_e= 0; V_CB= 5 V; f = 1 MHz

I_C= i_c= 0; V_EB= 500 mV; f = 1 MHz

I_C= 10 mA; V_CE= 20 V; f = 100 MHz

200

850

950

−

V_BEsat

650

−

C_c

C_e

f_T

collector capacitance

emitter capacitance

transition frequency

noise ﬁgure

−

300

−

MHz

I_C= 100 µA; V_CE= 5 V; R_S= 1 kΩ;

f = 10 Hz to 15.7 kHz

Switching times (between 10% and 90% levels); see Fig.3

t_on

t_d

t_r

turn-on time

delay time

rise time

I_Con= 10 mA; I_Bon= 1 mA; I_Boff= −1 mA

−

t_off

t_s

turn-off time

storage time

fall time

240

200

t_f

Note

1. Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

MGD834

160

handbook, full pagewidth

120

−2

−1

(mA)

V_CE= 1 V.

Fig.2 DC current gain; typical values.

handbook, full pagewidth

(probe)

oscilloscope

450 Ω

DUT

MLB826

V_i= 5 V; T = 500 µs; t_p= 10 µs; t_r= t_f≤ 3 ns.

R1 = 56 Ω; R2 = 2.5 kΩ; R_B= 3.9 kΩ; R_C= 270 Ω.

V_BB= −1.9 V; V_CC= 3 V.

Oscilloscope input impedance Z_i= 50 Ω.

Fig.3 Test circuit for switching times.

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1997 Jun 02

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSR17A

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1997 Jun 02

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +43 1 60 101, Fax. +43 1 60 101 1210

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Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Belgium: see The Netherlands

Brazil: see South America

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Colombia: see South America

Czech Republic: see Austria

Slovakia: see Austria

Slovenia: see Italy

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

South America: Rua do Rocio 220, 5th floor, Suite 51,

04552-903 São Paulo, SÃO PAULO - SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 829 1849

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Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

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Tel. +34 3 301 6312, Fax. +34 3 301 4107

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

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Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

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Hungary: see Austria

India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Indonesia: see Singapore

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

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Tel. +1 800 234 7381

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

Middle East: see Italy

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,

Internet: http://www.semiconductors.philips.com

Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA54

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

117047/00/02/pp8

Date of release: 1997 Jun 02

Document order number: 9397 750 02185

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BSR17A产品参数

型号:	BSR17A
生命周期：	Obsolete
IHS 制造商：	NXP SEMICONDUCTORS
零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.21.00.75
风险等级：	5.67
最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	4 pF
集电极-发射极最大电压：	40 V
配置：	SINGLE
最小直流电流增益 (hFE)：	30
JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.25 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz
最大关闭时间（toff）：	240 ns
最大开启时间（吨）：	65 ns
VCEsat-Max：	0.3 V
Base Number Matches：	1

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产品型号BSR17A的概述

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