BSS123芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BSS123的概述

芯片BSS123的概述 BSS123是一款由NXP（原飞利浦半导体）生产的N沟道增强型场效应晶体管（MOSFET），广泛应用于开关电源、功率放大器和数字电路等领域。作为一种高效的开关元件，BSS123在低电压和低功耗应用中表现出众，特别适合用于驱动负载和信号开关。其小巧的封装和优异的性能使其在现代电子设计中受到青睐。芯片BSS123的详细参数 BSS123的主要电气参数如下： - 类型：N沟道MOSFET - 最大漏极源极电压（Vds）：60V - 最大漏极电流（Id）：170mA - 门极阈值电压（Vgs(th)）：1.0V到3.0V（典型值为2.0V） - 最大功耗（Pd）：500mW - 输入电容（Ciss）：60pF（在Vds=10V时） - 漏极-源极电阻（Rds(on)）：约为0.3Ω（在Vgs=10V时） - 工作温度范围：-55°C至+150°C 以上参数表明，BSS...

产品型号BSS123的Datasheet PDF文件预览

June 2003

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

General Description

These N-Channel enhancement mode field effect

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance.These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

0.17 A, 100 V. R_DS(ON)= 6W @ V_GS= 10 V

R_DS(ON)= 10W @ V_GS= 4.5 V

High density cell design for extremely low R_DS(ON)

Rugged and Reliable

Compact industry standard SOT-23 surface mount

package

SOT-23

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

100

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1)

0.17

0.68

Maximum Power Dissipation

Derate Above 25°C

0.36

P_D

mW/°C

2.8

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

- 55 to +150

°C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300

350

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

BSS123

7’’

8mm

3000 units

BSS123 Rev G(W)

Ó2003 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

100

V_GS= 0 V,

I_D= 250 mA

DBVDSS

DT_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 mA,Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

V_DS= 100 V, V_GS= 0 V

V_DS= 100 V,V_GS= 0 V T_J= 125°C

V_DS= 20 V,

V_GS= 0 V

I_GSS

Gate–Body Leakage.

V_GS= ±20 V, V_DS= 0 V

±50

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS

I_D= 1 mA

0.8

1.7

DVGS(th)

DT_J

Gate Threshold Voltage

Temperature Coefficient

–2.7

I_D= 1 mA,Referenced to 25°C

mV/°C

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 4.5 V,

V_GS= 10 V, I_D= 0.17 A, T_J= 125°C

I_D= 0.17 A

1.2

1.3

2.2

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 10V,

V_DS= 5 V

0.68

0.08

Forward Transconductance

I_D= 0.17 A

0.8

Dynamic Characteristics

C_iss

C_oss

C_rss

R_G

Input Capacitance

V_DS= 25 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

3.4

2.2

V_GS= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

1.7

3.4

V_DD= 30 V,

V_GS= 10 V,

I_D= 0.28 A,

R_GEN= 6 W

2.4

1.8

0.2

0.3

Q_g

Q_gs

Q_gd

2.5

V_DS= 30 V,

V_GS= 10 V

I_D= 0.22 A,

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

0.17

1.3

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V,

I_S= 0.34 A(Note 2)

0.8

t_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= 0.17 A,

d_iF/d_t= 100 A/µs

Q_rr

NOTE:

R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_qJCis guaranteed by design while R_qCAis determined by the user's board design.

a) 350°C/W when mounted on a

minimum pad..

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

BSS123 Rev G(W)

Typical Characteristics

1.6

1.5

1.4

1.3

1.2

1.1

V_GS= 10V

3.5V

6.0V

0.8

4.5V

3.0V

V_GS= 2.5V

0.6

0.4

0.2

2.5V

3.0V

3.5V

4.5V

0.6

6.0V

10V

2.0V

0.9

0.2

0.4

0.8

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2

3.4

I_D= 170mA

V_GS= 10V

I_D= 0.08A

2.6

2.2

1.8

1.4

1.8

1.6

1.4

1.2

T_A= 125^oC

0.8

0.6

0.4

T_A= 25^oC

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V_GS= 0V

V_DS= 10V

0.8

0.1

T_A= 125^oC

25^oC

0.6

0.4

0.2

0.01

0.001

-55^oC

T_A= 125^oC

25^oC

-55^oC

0.0001

0.2

0.4

0.6

0.8

1.2

1.5

2.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

BSS123 Rev G(W)

Typical Characteristics

100

f = 1 MHz

V_GS= 0 V

I_D= 0.17A

V_DS= 30V

50V

C_ISS

70V

C_OSS

C_RSS

100

0.4

0.8

1.2

1.6

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

R_DS(ON)LIMIT

100ms

SINGLE PULSE

R_qJA= 350°C/W

T_A= 25°C

1ms

10ms

100ms

0.1

0.01

10s

V_GS= 10V

SINGLE PULSE

R_q_JA= 350^oC/W

T_A= 25^oC

0.001

100

1000

0.001

0.01

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_qJA(t) = r(t) * R_qJA

_qJA= 350^oC/W

0.2

0.1

0.05

0.02

P(pk)

t₁

0.01

t₂

0.01

T_J- T_A= P * R_qJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a.

Transient thermal response will change depending on the circuit board design.

BSS123 Rev G(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarksꢀ

ACEx

PACMAN

POP

Power247

PowerTrench

QFET

SPM

Stealth

SuperSOT-3

SuperSOT-6

SuperSOT-8

ImpliedDisconnect

ISOPLANAR

LittleFET

MicroFET

MicroPak

MICROWIRE

MSX

FACT

ActiveArray

Bottomless

CoolFET

CROSSVOLT

DOME

EcoSPARK

E²CMOS^TM

EnSigna^TM

FACT Quiet Series

FAST

FASTr

FRFET

GlobalOptoisolator

GTO

HiSeC

I²C

SyncFET

QT Optoelectronics TinyLogic

Quiet Series

RapidConfigure

RapidConnect

TruTranslation

UHC

UltraFET

MSXPro

OCX

OCXPro

OPTOLOGIC

Across the boardꢀAround the worldꢀ

The Power Franchise

ProgrammableActive Droop

SILENT SWITCHER VCX

SMARTSTART

OPTOPLANAR

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERSꢀ

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ

As used herein:

1ꢀ Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

userꢀ

2ꢀ A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectivenessꢀ

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product developmentꢀ Specifications may change in

any manner without noticeꢀ

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later dateꢀ

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

designꢀ

No Identification Needed

Obsolete

Full Production

This datasheet contains final specificationsꢀ Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve designꢀ

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductorꢀ

The datasheet is printed for reference information onlyꢀ

Revꢀ I2

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