BSS123LT1G原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号BSS123LT1G的概述

芯片BSS123LT1G的概述 BSS123LT1G是一种小型N沟道增强型场效应晶体管（MOSFET），广泛应用于各种电子电路中。该器件的设计目的是为了在低电压和低功耗的环境中工作，兼顾开关速度与热性能。BSS123LT1G以其高导通能力和快速的开关特性，在消费电子、通讯设备、电源管理等领域具有重要的应用价值。在电子设计中，MOSFET作为一种重要的半导体器件，被广泛应用于开关电源、电机驱动和信号调理等场合。BSS123LT1G由于其较低的门限电压、快速的开关时间以及高达数安的电流承载能力，成为了设计师的首选。它的外形和电气特性使得该器件很适合用于小型电路板和密集型的电子产品设计中。芯片BSS123LT1G的详细参数 BSS123LT1G具有如下主要电气参数： - 极性类型：N沟道 - 最大漏极-源极电压（V_DS）：60 V - 最大漏极电流（I_D）：1.2 A - 最大功耗（...

产品型号BSS123LT1G的Datasheet PDF文件预览

BSS123LT1

Preferred Device

Power MOSFET

170 mAmps, 100 Volts

N−Channel SOT−23

http://onsemi.com

Features

• Pb−Free Packages are Available

170 mAMPS

100 VOLTS

R_DS(on)= 6 W

N−Channel

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

DSS

100

Vdc

Gate−Source Voltage

− Continuous

GSM

±20

±40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current

− Continuous (Note 1)

− Pulsed (Note 2)

Adc

0.17

0.68

MARKING

DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

SOT−23

CASE 318

STYLE 21

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

= Device Code

= Date Code

(Note 3) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

PIN ASSIGNMENT

Drain

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Width v 300 ms, Duty Cycle v 2.0%.

3. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Gate

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 5

BSS123LT1/D

BSS123LT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Drain−Source Breakdown Voltage

100

−

Vdc

(BR)DSS

(V = 0, I = 250 mAdc)

Zero Gate Voltage Drain Current

(V = 0, V = 100 Vdc) T = 25°C

mAdc

DSS

−

T = 125°C

Gate−Body Leakage Current

(V = 20 Vdc, V = 0)

−

nAdc

GSS

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.8

−

5.0

−

2.8

6.0

−

Vdc

GS(th)

(V = V , I = 1.0 mAdc)

Static Drain−Source On−Resistance

(V = 10 Vdc, I = 100 mAdc)

DS(on)

Forward Transconductance

(V = 25 Vdc, I = 100 mAdc)

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V = 25 Vdc, V = 0, f = 1.0 MHz)

−

9.0

4.0

−

iss

Output Capacitance

(V = 25 Vdc, V = 0, f = 1.0 MHz)

oss

Reverse Transfer Capacitance

(V = 25 Vdc, V = 0, f = 1.0 MHz)

rss

SWITCHING CHARACTERISTICS⁽⁴⁾

Turn−On Delay Time

−

d(on)

(V = 30 Vdc, I = 0.28 Adc,

= 10 Vdc, R = 50 W)

Turn−Off Delay Time

d(off)

REVERSE DIODE

Diode Forward On−Voltage

−

1.3

(I = 0.34 Adc, V = 0 Vdc)

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

†

Package

Shipping

BSS123LT1

SOT−23

3,000 Tape & Reel

BSS123LT1G

SOT−23

(Pb−Free)

BSS123LT3

SOT−23

10,000 Tape & Reel

BSS123LT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

BSS123LT1

TYPICAL ELECTRICAL CHARACTERISTICS

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.0

= 10 V

T = 25°C

25°C

−ꢀ55°C

0.8

0.6

0.4

0.2

= 10 V

9 V

125°C

8 V

7 V

6 V

5 V

4 V

3 V

1.0 2.0 3.0 4.0

5.0

6.0 7.0 8.0

9.0 10

1.0 2.0 3.0 4.0

5.0

6.0 7.0 8.0

9.0 10

, DRAN SOURCE VOLTAGE (VOLTS)

V , GATE SOURCE VOLTAGE (VOLTS)

Figure 1. Ohmic Region

Figure 2. Transfer Characteristics

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.2

1.05

1.1

= V

= 1.0 mA

= 10 V

= 200 mA

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

−ꢀ60

−ꢀ20

+ꢀ20

+ꢀ60

+ꢀ100

+ꢀ140

−ꢀ60

−ꢀ20

+ꢀ20

+ꢀ60

+ꢀ100

+ꢀ140

T, TEMPERATURE (°C)

Figure 3. Temperature versus Static

Drain−Source On−Resistance

Figure 4. Temperature versus Gate

Threshold Voltage

http://onsemi.com

BSS123LT1

PACKAGE DIMENSIONS

SOT−23

(TO−236)

CASE 318−08

ISSUE AK

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BSS123LT1/D

http://onsemi.com

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