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产品型号BSS64的概述

芯片BSS64的概述 BSS64是一种用于电子电路的功率MOSFET（金属氧化物半导体场效应晶体管），它在现代电子产品中得到了广泛的应用。该芯片主要用于开关电源、电机驱动、LED照明等场合，因其具有低导通阻抗、高速度开关性能和良好的热稳定性，受到设计工程师的青睐。然而，选择适合的MOSFET型号对最终产品的性能至关重要，因此，深入了解BSS64的参数及其使用方法非常必要。芯片BSS64的详细参数 BSS64是N沟道MOSFET，其主要电气参数如下： - 绝对最大额定值（Absolute Maximum Ratings）: - 漏极-源极电压 (V_DS): 60V - 漏极电流 (I_D): 15A - 峰值瞬态漏极电流 (I_DM): 30A - 直流漏极-源极电压 (V_GS): ±20V - 最大功耗 (P_D): 25W (在无限大散热器条件下) - 电气...

产品型号BSS64的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BSS64

NPN high-voltage transistor

1999 Apr 15

Product speciﬁcation

Supersedes data of 1997 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

FEATURES

PINNING

• Low current (max. 100 mA)

• High voltage (max. 80 V).

DESCRIPTION

base

emitter

collector

APPLICATIONS

• High-voltage general purpose and switching

applications

• Intended for application in thick and thin-film circuits.

DESCRIPTION

handbook, halfpage

NPN transistor in a SOT23 plastic package.

PNP complement: BSS63.

MARKING

TYPE NUMBER

BSS64

MARKING CODE⁽¹⁾

Top view

MAM255

Note

Fig.1 Simplified outline (SOT23) and symbol.

= p : Made in Hong Kong.

= t : Made in Malaysia.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

CONDITIONS

open emitter

MIN.

MAX.

120

UNIT

V_CBO

V_CEO

V_EBO

I_C

−

open base

open collector

100

250

100

250

+150

150

+150

°C

I_CM

I_BM

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C

−65

−

°C

T_amb

−65

°C

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

note 1

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient

500

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

SYMBOL

I_CBO

PARAMETER

CONDITIONS

I_E= 0; V_CB= 90 V

MIN.

TYP. MAX. UNIT

collector cut-off current

−

100

200

−

µA

I_E= 0; V_CB= 90 V; T_j= 150 °C

I_C= 0; V_EB= 5 V

−

I_EBO

h_FE

emitter cut-off current

DC current gain

−

0.5

−

I_C= 1 mA; V_CE= 1 V

−

I_C= 10 mA; V_CE= 1 V

I_C= 20 mA; V_CE= 1 V

I_C= 4 mA; I_B= 400 µA

I_C= 50 mA; I_B= 15 mA

I_E= i_e= 0; V_CB= 10 V; f = 1 MHz

−

V_CEsat

collector-emitter saturation

voltage

−

150

200

−

C_c

f_T

collector capacitance

transition frequency

−

I_C= 4 mA; V_CE= 10 V; f = 100 MHz 60

100

−

MHz

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

NOTES

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

BSS64

NOTES

1999 Apr 15

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

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Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Pakistan: see Singapore

Belgium: see The Netherlands

Brazil: see South America

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Colombia: see South America

Czech Republic: see Austria

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Hungary: see Austria

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Middle East: see Italy

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/00/04/pp8

Date of release: 1999 Apr 15

Document order number: 9397 750 05669

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BSS64产品参数

型号:	BSS64
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.64
最大集电极电流 (IC)：	0.1 A
配置：	Single
最小直流电流增益 (hFE)：	20
JESD-609代码：	e0
最高工作温度：	150 °C
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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