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产品型号BSS84PH6327的概述

芯片BSS84PH6327的概述 BSS84PH6327是一种常用的N沟道MOSFET（场效应晶体管），广泛应用于低功耗线路驱动、电源管理和开关应用。这种器件具备较低的导通电阻、良好的开关特性以及适中的电压和电流承载能力，成为设计工程师在设计电源和信号管理电路时的一种理想选择。BSS84PH6327可以在宽电压范围内稳定工作，在众多领域如消费电子、工业设备和汽车电子中都有广泛的应用。芯片BSS84PH6327的详细参数 BSS84PH6327的关键电气参数如下： 1. VDS（漏到源电压）: 最大160V 2. IDS（连续漏电流）: 最大0.4A 3. VGS（栅到源电压）: 最大±20V 4. RDS(on)（导通电阻）: 典型值约为3.5Ω 5. Qg（栅电荷）: 大约为11nC 6. Ptot（功耗）: 最大为1W 7. 工作温度范围: -55°C至+150°C 8. 封装类...

产品型号BSS84PH6327XTSA2的Datasheet PDF文件预览

BSS84P



SIPMOS Small-Signal-Transistor

Feature

Product Summary

-60

P-Channel

DS(on)

Enhancement mode

Logic Level

-0.17

PG-SOT-23

Avalanche rated

dv/dt rated

• Qualified according to AEC Q101

VPS05161

• Halogen-free according to IEC61249-2-21

Drain

pin 3

Tape and Reel

Type

Package

Marking

YBs

Gate

pin1

BSS84P

PG-SOT-23

H6327:3000pcs/r.

H6433:10000pcs/r.

Source

pin 2

YBs

Maximum Ratings, at

= 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-0.17

-0.14

-0.68

T =70°C

Pulsed drain current

D puls

T =25°C

2.6

Avalanche energy, single pulse

I =-0.17 A , V =-25V, R =25

DD GS

0.036

-6

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

dv/dt

kV/µs

I =-0.17A, V =-48V, di/dt=-200A/µs, T

=150°C

jmax

Gate source voltage

Power dissipation

±20

0.36

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +150

55/150/56

stg

ESD Class

Class 0

JESD22-A114-HBM

Rev 2.7

Page 1

2011-07-11

BSS84P

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

200 K/W

Thermal resistance, junction - soldering point

(Pin 3)

thJS

thJA

SMD version, device on PCB:

@ min. footprint

350

300

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

-60

-1

typ. max.

Static Characteristics

Drain-source breakdown voltage

(BR)DSS

=0, I =-250µA

-1.5

-2

Gate threshold voltage, V = V

GS(th)

DSS

I =-20µA

µA

Zero gate voltage drain current

=-60V, V =0, T =25°C

-0.1

-10

-1

=-60V, V =0, T =125°C

DS GS

-100

-100 nA

Gate-source leakage current

GSS

=-20V, V =0

GS DS

Drain-source on-state resistance

DS(on)

=-4.5V, I =-0.14A

5.8

Drain-source on-state resistance

=-10V, I =-0.17A

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev 2.7

Page 2

2011-07-11

BSS84P

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

Dynamic Characteristics

Transconductance

2*I *R ,

DS(on)max

0.065 0.13

I =-0.14A

Input capacitance

Output capacitance

=0, V =-25V,

GS DS

iss

f=1MHz

oss

Reverse transfer capacitance C

rss

Turn-on delay time

Rise time

=-30V, V =-4.5V,

DD GS

6.7

16.2

8.6

20.5

d(on)

I =-0.14A, R =25

24.3

12.9

30.8

Turn-off delay time

Fall time

d(off)

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

=-48V, I =-0.17A

0.25

0.3

0.37 nC

0.45

=-48V, I =-0.17A,

1.5

Gate charge total

=0 to -10V

=-48V, I =-0.17A

-3.42

Gate plateau voltage

V(plateau)

Reverse Diode

T =25°C

-0.17 A

-0.68

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

=0, I =-0.17A

-0.93 -1.24 V

Inverse diode forward voltage V

Reverse recovery time

V =-30V, I =l ,

F S

di /dt=100A/µs

Reverse recovery charge

Rev 2.7

Page 3

2011-07-11

BSS84P

1 Power dissipation

2 Drain current

I = f (T )

= f (T )

tot

parameter: V

10 V

BSS 84 P

0.38

-0.18

0.32

0.28

0.24

0.2

-0.14

-0.12

-0.1

-0.08

-0.06

-0.04

-0.02

0.16

0.12

0.08

0.04

80 100 120

160

80 100 120

160

°C

3 Safe operating area

I = f ( V

4 Transient thermal impedance

Z = f (t )

thJA

)

parameter : D = 0 , T = 25 °C

parameter : D = t /T

-10 ¹

10 ³

BSS 84 P

K/W

10 ²

-10 ⁰

= 170.0µs

1 ms

-10 ^-1

-10 ^-2

-10 ^-3

10 ¹

D = 0.50

0.20

10 ms

0.10

0.05

10 ⁰

single pulse

0.02

0.01

10 ^-1

-10 ^-1

-10 ⁰

-10 ¹

-10 ²

10 ^-510 ^-410 ^-310 ^-210 ^-110 ⁰10 ¹10 ²

10 ⁴

Rev 2.7

Page 4

2011-07-11

BSS84P

5 Typ. output characteristic

I = f (V )

6 Typ. drain-source on resistance

= f (I )

DS(on)

parameter: T = 25 °C

parameter: V ; T = 25 °C

BSS 84 P

-0.4

_tot= 0.36W

[V]

-2.5

-3.0

-3.5

-4.0

-4.5

-5.0

-5.5

-6.0

-6.5

-7.0

-8.0

-10.0

-0.32

-0.28

-0.24

-0.2

-0.16

-0.12

-0.08

-0.04

[V] =

-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0

-0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4

-5

-0.04 -0.08-0.12-0.16 -0.2 -0.24 -0.28-0.32 -0.38

7 Typ. transfer characteristics

8 Typ. forward transconductance

g = f(I )

I = f ( V ); |V | 2 x |I | x R

DS(on)max

parameter: T = 25 °C

0.4

0.16

0.3

0.25

0.2

0.12

0.1

0.08

0.06

0.04

0.02

0.15

0.1

0.05

0.04

0.08

0.12

0.16

0.22

-I

- V

Rev 2.7

Page 5

2011-07-11

BSS84P

9 Drain-source on-state resistance

= f (T )

10 Typ. gate threshold voltage

V = f (T )

GS(th)

DS(on)

parameter : I = -0.17 A, V = -10 V

parameter: V = V

GS DS

BSS 84 P

2.4

98%

1.8

1.6

1.4

1.2

typ.

98%

typ

0.8

0.6

0.4

°C

-60

-20

100

180

-60

-20

100

160

11 Typ. capacitances

C = f (V )

12 Forward character. of reverse diode

I = f (V )

parameter: V =0, f=1 MHz

parameter: T , tp = 80 µs

10 ²

-10 ⁰

BSS 84 P

Ciss

-10 ^-1

Coss

10 ¹

-10 ^-2

T_j= 25 °C typ

Crss

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

10 ⁰

-10 ^-3

-0.4 -0.8 -1.2 -1.6

-2

-2.4

-3

- V

Rev 2.7

Page 6

2011-07-11

BSS84P

13 Typ. avalanche energy

= f (T ), parameter:

14 Typ. gate charge

= f (Q

)

Gate

I = -0.17 A , V = -25 V, R = 25

parameter: I = -0.17 A pulsed; T = 25 °C

BSS 84 P

-16

-12

-10

1.5

0,2

DS max

0,8

DS max

-8

-6

-4

-2

0.5

105

125

165

0.2

0.4

0.6

0.8

1.2

1.5

Gate

°C

15 Drain-source breakdown voltage

= f (T )

(BR)DSS

BSS 84 P

-72

-68

-66

-64

-62

-60

-58

-56

-54

-60

-20

100

180

°C

Rev 2.7

Page 7

2011-07-11

BSS84P

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev 2.7

Page 7

2011-07-11

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