BTB16-800C原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号BTB16-800C的Datasheet PDF文件预览

BTA/BTB16 and T16 Series

SNUBBERLESS™ , LOGIC LEVEL & STANDARD

16A TRIACS

MAIN FEATURES:

Symbol

Value

Unit

T(RMS)

600, 700 and 800

DRM RRM

10 to 50

GT (Q )

DESCRIPTION

Available either in through-hole or surface-mount

packages, the BTA/BTB16 and T16 triac series is

suitable for general purpose AC switching. They

can be used as an ON/OFF function in applications

such as static relays, heating regulation, induction

motor starting circuits... or for phase control

operation in light dimmers, motor speed

controllers, ...

The snubberless versions (BTA/BTB...W and T16

series) are specially recommended for use on

inductive loads, thanks to their high commutation

performances. By using an internal ceramic pad,

the BTA series provides voltage insulated tab

(rated at 2500V RMS) complying with UL

standards (File ref.: E81734).

D PAK

(T16-G)

TO-220AB Insulated

(BTA16)

TO-220AB

(BTB16)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current

(full sine wave)

T(RMS)

D2 PA K

TO-220AB

TO-220AB Ins.

F = 60 Hz

Tc = 100°C

Tc = 85°C

t = 16.7 ms

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

168

160

TSM

F = 50 Hz

tp = 10 ms

144

A s

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

Tj = 125°C

Tj = 25°C

A/µs

= 2 x I , tr ≤ 100 ns

Non repetitive surge peak off-state

voltage

DRM RRM

tp = 10 ms

tp = 20 µs

DSM RSM

+ 100

Peak gate current

Tj = 125°C

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

October 2002 - Ed: 6A

1/7

BTA/BTB16 and T16 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)

Symbol

Test Conditions

Quadrant

T16

BTA/BTB16

Unit

T1635

(1)

I - II - III

MAX.

MIN.

= 12 V

R = 33 Ω

1.3

0.2

= V

R = 3.3 kΩ Tj = 125°C

DRM

(2)

I = 500 mA

MAX.

500

8.5

3.0

500

1000

= 1.2 I

I - III

dV/dt (2)

= 67 % V

gate open Tj = 125°C

MIN.

V/µs

DRM

(dI/dt)c (2) (dV/dt)c = 0.1 V/µs

(dV/dt)c = 10 V/µs

Tj = 125°C

A/ms

Without snubber

8.5

■ STANDARD (4 Quadrants)

Symbol

Test Conditions

Quadrant

BTA/BTB16

Unit

(1)

I - II - III

100

MAX.

= 12 V

R = 33 Ω

ALL

MAX.

MIN.

1.3

0.2

= V

R = 3.3 kΩ Tj = 125°C

DRM

(2)

I = 500 mA

MAX.

200

= 1.2 I

I - III - IV

120

400

= 67 % V

gate open Tj = 125°C

dV/dt (2)

MIN.

V/µs

DRM

(dV/dt)c(2) (dI/dt)c = 7 A/ms

Tj = 125°C

STATIC CHARACTERISTICS

Symbol

Test Conditions

Value

Unit

(2)

= 22.5 A

tp = 380 µs

Threshold voltage

Dynamic resistance

= V

Tj = 25°C

MAX.

1.55

0.85

Tj = 125°C

Tj = 25°C

Tj = 125°C

R (2)

mΩ

µA

DRM

RRM

DRM

RRM

MAX.

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

2/7

BTA/BTB16 and T16 Series

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Junction to case (AC)

°C/W

th(j-c)

D PAK

1.2

TO-220AB

TO-220AB Insulated

2.1

Junction to ambient

°C/W

th(j-a)

S = 1 cm

D PAK

TO-220AB

TO-220AB Insulated

S: Copper surface under tab

PRODUCT SELECTOR

Voltage(xxx)

700 V

Package

Part Number

Sensitivity

Type

600 V

800 V

BTA/BTB16-xxxB

BTA/BTB16-xxxBW

BTA/BTB16-xxxC

BTA/BTB16-xxxCW

BTA/BTB16-xxxSW

50 mA

25 mA

35 mA

10 mA

Standard

Snubberless

Standard

TO-220AB

Snubberless

Logic level

T1635-xxxG

35 mA

Snubberless

D PAK

ORDERING INFORMATION

BT A 16 - 600 BW (RG)

TRIAC

PACKING MODE

Blank: Bulk

RG:Tube

SERIES

SENSITIVITY & TYPE

B: 50mA STANDARD

BW: 50mA SNUBBERLESS

C: 25mA STANDARD

CW: 35mA SNUBBERLESS

SW: 10mA LOGIC LEVEL

INSULATION:

A: insulated

B: non insulated

VOLTAGE:

600: 600V

700: 700V

800: 800V

CURRENT: 16A

T 16 35 - 600 G (-TR)

TRIAC

SERIES

PACKAGE:

G: D²PAK

CURRENT: 16A

VOLTAGE:

PACKING MODE:

Blank:Tube

-TR:Tape & Reel

600: 600V

800: 800V

SENSITIVITY:

35: 35mA

3/7

BTA/BTB16 and T16 Series

OTHER INFORMATION

Part Number

Base

quantity

Packing

mode

Marking

Weight

BTA/BTB16-xxxyz

BTA/BTB16-xxxyzRG

T1635-xxxG

BTA/BTB16xxxyz

2.3 g

1.5 g

250

Bulk

Tube

BTA/BTB16-xxxyz

T1635xxxG

Tube

T1635-xxxG-TR

T1635xxxG

1000

Tape & reel

Note: xxx = voltage, y = sensitivity, z = type

Fig. 1: Maximum power dissipation versus RMS

Fig. 2-1: RMS on-state current versus case

on-state current (full cycle).

temperature (full cycle).

P (W)

IT(RMS) (A)

BTB/T16

BTA

IT(RMS) (A)

Tc(°C)

100

125

Fig. 2-2: D²PAK RMS on-state current versus

ambient temperature (printed circuit board FR4,

copper thickness: 35 µm), full cycle.

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

IT(RMS) (A)

K=[Zth/Rth]

4.0

1E+0

D²PAK

3.5

Zth(j-c)

(S=1cm²)

3.0

2.5

2.0

1.5

1.0

1E-1

Zth(j-a)

tp (s)

0.5

Tamb(°C)

1E-2

0.0

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

100

125

4/7

BTA/BTB16 and T16 Series

Fig. 4: On-state characteristics (maximum

Fig. 5: Surge peak on-state current versus

values)

number of cycles.

ITM (A)

ITSM (A)

200

180

Tj max

100

160

140

120

100

t=20ms

One cycle

Non repetitive

Tj initial=25°C

Tj=25°C

Repetitive

Tc=85°C

Tj max:

Vto = 0.85 V

Rd = 25 mΩ

VTM (V)

Number of cycles

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

100

1000

Fig. 6: Non-repetitive surge peak on-state

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

current for

sinusoidal pulse with width

tp < 10ms, and corresponding value of I²t.

IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]

ITSM (A), I²t (A²s)

2.5

3000

Tj initial=25°C

2.0

dI/dt limitation:

50A/µs

IGT

1000

1.5

IH & IL

ITSM

I²t

1.0

0.5

Tj(°C)

tp (ms)

0.0

100

0.01

-40 -20

80 100 120 140

0.10

1.00

10.00

Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values).

Fig. 9: Relative variation of critical rate of

decrease of main current versus junction

temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.0

1.8

1.6

1.4

1.2

BW/CW/T1635

1.0

0.8

0.6

Tj (°C)

(dV/dt)c (V/µs)

0.4

0.1

1.0

10.0

100.0

100

125

5/7

BTA/BTB16 and T16 Series

Fig. 10:D²PAK Thermal resistance junction to

ambient versus copper surface under tab (printed

circuit board FR4, copper thickness: 35 µm).

Rth(j-a) (°C/W)

D²PAK

S(cm²)

12 16 20 24 28 32 36 40

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

DIMENSIONS

Millimeters

Min. Typ. Max. Min. Typ. Max.

REF.

Inches

15.20

15.90 0.598

0.625

3.75

0.147

13.00

10.00

0.61

1.23

4.40

0.49

2.40

6.20

3.75

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

0.409

0.034

0.051

0.181

0.027

0.107

0.106

0.259

0.151

15.80 16.40 16.80 0.622 0.646 0.661

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

2.60

0.102

6/7

BTA/BTB16 and T16 Series

PACKAGE MECHANICAL DATA

D²PAK (Plastic)

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

4.30

2.49

0.03

0.70

1.25

0.45

1.21

8.95

10.00

4.88

15.00

1.27

1.40

4.60 0.169

2.69 0.098

0.23 0.001

0.93 0.027

0.181

0.106

0.009

0.037

1.40

0.048 0.055

0.60 0.017

1.36 0.047

9.35 0.352

10.28 0.393

5.28 0.192

15.85 0.590

1.40 0.050

1.75 0.055

0.024

0.054

0.368

0.405

0.208

0.624

0.055

0.069

2.0 MIN.

FLAT ZONE

0.40

0.016

0°

8°

0°

8°

FOOTPRINT DIMENSIONS (in millimeters)

D²PAK (Plastic)

16.90

10.30

5.08

1.30

3.70

8.90

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany

Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore

Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

7/7

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BTB16-800C产品参数

型号:	BTB16-800C
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	TO-220AB
包装说明：	PLASTIC PACKAGE-3
针数：	3
Reach Compliance Code：	not_compliant
HTS代码：	8541.30.00.80
风险等级：	5.73
外壳连接：	MAIN TERMINAL 2
配置：	SINGLE
换向电压的临界上升率-最小值：	5 V/us
关态电压最小值的临界上升速率：	200 V/us
最大直流栅极触发电流：	25 mA
最大直流栅极触发电压：	1.3 V
最大维持电流：	25 mA
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
最大漏电流：	2 mA
元件数量：	1
端子数量：	3
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大均方根通态电流：	16 A
断态重复峰值电压：	800 V
子类别：	TRIACs
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：	1

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