BTS141芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BTS141的概述

芯片BTS141概述 BTS141是一种高侧开关，广泛应用于汽车电子和工业控制领域。该芯片提供了一种可靠的解决方案，以控制电机、灯具和其他负载。BTS141的设计专注于PWM控制和过载保护，使其适用于需要高功率电子控制的应用。与传统的继电器相比，BTS141能够实现更快的开关速度，这在现代电子设备中尤为重要。其内建的MOSFET结构允许在低电压下驱动高电流负载，降低了对功率管理的需求，从而提高了系统的整体效率。此外，BTS141集成了多种保护功能，这些特性使得它在汽车领域尤为受欢迎，能够承受极端温度和电气应力。芯片BTS141的详细参数 BTS141的详细参数主要包括以下几个方面： - 工作电压范围：BTS141通常在12V至30V之间工作，适合车载和工业应用的电压需求。 - 导通电阻 (R_DS(on))：在25°C时，BTS141的导通电阻大约为30毫欧，表明其在开关状态下的能...

产品型号BTS141的Datasheet PDF文件预览

=

HITFET BTS 141

Smart Lowside Power Switch

Features

• Logic Level Input

Product Summary

Drain source voltage

On-state resistance

Current limit

Nominal load current

Clamping energy

mΩ

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

DS(on)

D(lim)

D(ISO)

4000 mJ

• Status feedback with external input resistor

• Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description



N channel vertical power FET in Smart SIPMOS chip on chip tech-

nology. Fully protected by embedded protected functions.

LOAD

Drain

Overvoltage

protection

Current

limitation

dv/dt

limitation

Over-

Overload

protection

Short circuit

temperature

ESD

protection

Source

HITFET

Page 1

19.05.2000

BTS 141

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Drain source voltage

Symbol

Value

Unit

Drain source voltage for short circuit protection

Continuous input current ¹⁾

DS(SC)

-0.2V ≤ V ≤ 10V

no limit

V < -0.2V or V > 10V

| I | ≤ 2

Operating temperature

Storage temperature

Power dissipation

- 40 ... +150

- 55 ... +150

149

°C

stg

tot

T = 25 °C

Unclamped single pulse inductive energy

4000

3000

= 12 A

D(ISO)

Electrostatic discharge voltage (Human Body Model)

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

ESD

Load dump protection V

= V + V

LoadDump

V =low or high; V =13.5 V

100

t_d= 400 ms, R = 2 Ω, I =0,5*12A

t_d= 400 ms, R = 2 Ω, I = 12A

DIN humidity category, DIN 40 040

IEC climatic category; DIN IEC 68-1

40/150/56

Thermal resistance

junction - case:

junction - ambient:

0.84

K/W

thJC

thJA

SMD version, device on PCB:

In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Loaddump

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for Drain connection.

PCB mounted vertical without blown air.

Page 2

19.05.2000

BTS 141

Electrical Characteristics

Parameter

Symbol

Values

typ. max.

Unit

at T =25°C, unless otherwise specified

min.

Characteristics

Drain source clamp voltage

DS(AZ)

T = - 40 ...+ 150°C, I = 10 mA

Off state drain current

= 32 V, T = -40...+150 °C, V = 0 V

1.3

µA

DSS

Input threshold voltage

I = 2,7 mA

1.7

270

2.2

IN(th)

100 µA

500

Input current - normal operation, I <I

D(lim)

IIN(1)

V = 10 V

Input current - current limitation mode, I =I

: I

D(lim)

IN(2)

IN(3)

IN(H)

V = 10 V

1000 2500 4000

Input current - after thermal shutdown, I =0 A:

V = 10 V

Input holding current after thermal shutdown

T = 25 °C

500

300

T = 150 °C

On-state resistance

mΩ

DS(on)

V = 5 V, I = 12 A, T = 25 °C

V = 5 V, I = 12 A, T = 150 °C

On-state resistance

V = 10 V, I = 12 A, T = 25 °C

V = 10 V, I = 12 A, T = 150 °C

Nominal load current (ISO 10483)

V = 10 V, V = 0.5 V, T = 85 °C

D(ISO)

If the input current is limited by external components, low drain currents can flow and heat the device.

Auto restart behaviour can occur.

Page 3

19.05.2000

BTS 141

Electrical Characteristics

Parameter

Symbol

Values

typ. max.

Unit

at T =25°C, unless otherwise specified

min.

Characteristics

Initial peak short circuit current limit

100

D(SCp)

V = 10 V, V = 12 V

Current limit

D(lim)

V = 10 V, V = 12 V, t = 350 µs,

T = -40...+150 °C

Dynamic Characteristics

Turn-on time V to 90% I :

100 µs

170

R = 2,2 Ω, V = 0 to 10 V, V = 12 V

Turn-off time

V to 10% I :

off

R = 2,2 Ω, V = 10 to 0 V, V = 12 V

V/µs

Slew rate on

70 to 50% V :

-dV /dt

DS on

R = 2,2 Ω, V = 0 to 10 V, V = 12 V

Slew rate off

50 to 70% V :

dV /dt

DS off

R = 2,2 Ω, V = 10 to 0 V, V = 12 V

Protection Functions

Thermal overload trip temperature

150

165

°C

Unclamped single pulse inductive energy

I = 12 A, T = 25 °C, V = 32 V

4000

900

I = 12 A, T = 150 °C, V = 32 V

Inverse Diode

Inverse diode forward voltage

I = 5*12A, t = 300 µS, V = 0 V

1.13

Device switched on into existing short circuit (see diagram Determination of I

). If the device is in on condition

D(lim)

and a short circuit occurs, these values might be exceeded for max. 50 µs.

Page 4

19.05.2000

BTS 141

Block Diagramm

Terms

Inductive and overvoltage output clamp

HITFET

Short circuit behaviour

Input circuit (ESD protection)

D(SCp)

D(Lim)

ESD-ZD

Source

t 2

t 0

t 1

ESD zener diodes are not designed

for DC current > 2 mA @ V >10V.

t : Turn on into a short circuit

t : Measurementpoint for I

D(lim)

t : Activation of the fast temperature sensor and

regulation of the drain current to a level where

the junction temperature remains constant.

t : Thermal shutdown caused by the second

temperature sensor, achieved by an

integrating measurement.

Page 5

19.05.2000

BTS 141

On-state resistance

= f(T ); I =12A; V =10V

Maximum allowable power dissipation

= f(T )

tot

BTS 141

160

Ω

120

100

max.

typ.

°C

-50 -25

75 100

150

°C

150

80 100 120

160

On-state resistance

= f(T ); I = 12A; V =5V

Typ. input threshold voltage

= f(T ); I =2,7mA; V =12V

IN(th)

2.0

Ω

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

max.

typ.

°C

-50 -25

75 100

150

°C

-50 -25

75 100

150

Page 6

19.05.2000

BTS 141

Typ. transfer characteristics

I = f(V ); V =12V; T =25°C

Typ. output characteristic

I = f(V ); T =25°C

Parameter: V

10V

Vin=3V

Transient thermal impedance

= f (t )

thJC

parameter : D = t /T

10 ¹

K/W

10 ⁰

D=0.5

0.2

10 ^-1

0.1

0.05

0.02

10 ^-2

0.01

0.005

10 ^-3

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-210 ^-110 ⁰

10 ²

Page 7

19.05.2000

BTS 141

Application examples:

Status signal of thermal shutdown by

monitoring input current

HITFET

µC

∆

thermal shutdown

∆V = R *I

ST IN(3)

Page 8

19.05.2000

BTS 141

Package

P-TO220-3-45

Ordering Code

Q67060-S6502-A3

Package

P-TO220-3-1

Ordering Code

Q67060-S6502-A2

4.4

1.3

0.2

2.4

9.9

0.75

0.5

1.05

2.54

GPT05164

1) shear and punch direction no burrs this surface

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Page 9

19.05.2000

BTS141相关文章

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BTS141产品参数

型号:	BTS141
是否无铅：	含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.6
Is Samacsys：	N
内置保护：	OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PSFM-T3
功能数量：	1
端子数量：	3
输出电流流向：	SINK
标称输出峰值电流：	12 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	COMMERCIAL
表面贴装：	NO
技术：	MOS
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	170 µs
接通时间：	100 µs
Base Number Matches：	1

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