BTS142D现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号BTS142D的概述

芯片BTS142D的概述 BTS142D是一种高效能的功率MOSFET驱动器，广泛用于自动化设备、电力控制器和汽车电子系统中。该芯片由德国恩智浦半导体公司（NXP Semiconductors）设计与制造，受到了从工业到消费电子等多个领域的青睐，因其在电源管理中的出色表现。BTS142D具有高电流承载能力、低导通电阻以及多样的输入控制选项，使其成为了一款可靠且高效的选择。芯片BTS142D的详细参数 BTS142D典型的电气参数包括： - 工作电压范围：5.5V至36V - 峰值脉冲电流：可达100A - 直流电流：最大可达40A - 导通电阻：约为10mΩ（典型值） - 关断电流：小于1μA - 工作温度范围：-40°C至+125°C - 输入电压阈值：2.5V至5V（逻辑兼容）该芯片能够在许多不同的条件下稳定工作，便于将其应用在不同的电路设计中。芯片BTS142D的厂家、包...

产品型号BTS142D的Datasheet PDF文件预览

ꢀ

HITFET ^ꢁII.Generation BTS 142 D

Smart Lowside Power Switch

Features

Product Summary

Drain source voltage

On-state resistance

Nominal load current

Clamping energy

S Logic Level Input

S Input Protection (ESD)

S Thermal shutdown with

auto restart

4.6

3.5

mꢀ

DS(on)

D(Nom)

S Overload protection

S Short circuit protection

S Overvoltage protection

S Current limitation

S Analog driving possible

P-TO252-3-11

Application

S All kinds of resistive, inductive and capacitive loads in switching

or linear applications

S µC compatible power switch for 12 V DC applications

S Replaces electromechanical relays and discrete circuits

General Description

ꢁ

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Vbb

Drain

ꢀ

HITFET

Pin 2 and 4 (TAB)

Current

Overvoltage-

Protection

Limitation

Gate-Driving

Unit

Pin 1

Over-

Overload

Short circuit

Protection

temperature

Protection

ESD

Protection

Pin 3

Source

Complete product spectrum and additional information http://www.infineon.com/hitfet

Page 1

2004-03-05

BTS 142 D

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Drain source voltage

Supply voltage for full short circuit protection

Continuous input voltage

Continuous input current

bb(SC)

-0.2 ... +10

-0.2V ? V ? 10V

self limited

V < -0.2V or V > 10V

| I | ? 2

°C

Operating temperature

Storage temperature

Power dissipation

-40 ...+150

-55 ... +150

stg

tot

T = 85 °C

6cm cooling area , T = 85 °C

1.1

Unclamped single pulse inductive energy

3.5

67.5

2)3)

Load dump protection V

= V + V

LoadDump

A S

V = 0 and 10 V, t_d= 400 ms, R = 2 ꢀ,

R = 3 ꢀ, V = 13.5 V

Electrostatic discharge voltage (Human Body Model)

according to Jedec norm

ESD

EIA/JESD22-A114-B, Section 4

Jedec humidity category,J-STD-20-B

IEC climatic category; DIN EN 60068-1

MSL1

40/150/56

Thermal resistance

junction - case:

1.1

K/W

thJC

thJA

SMD: junction - ambient

@ min. footprint

115

@ 6 cm cooling area

For input voltages beyond these limits I has to be limited.

not subject to production test, specified by design

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Loaddump

2 (one layer, 70µm thick) copper area for drain

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB mounted vertical without blown air.

not subject to production test, calculated by R

and R

ds(on)

thJA

Page 2

2004-03-05

BTS 142 D

Electrical Characteristics

Parameter

Symbol

Values

Unit

at T = 25°C, unless otherwise specified

min.

typ. max.

Characteristics

Drain source clamp voltage

DS(AZ)

T = - 40 ...+ 150 °C, I = 10 mA

µA

Off-state drain current

T = -40...+85 °C, V = 32 V, V = 0 V

DSS

1.5

T = 150 °C

Input threshold voltage

I = 2.4 mA, T = 25 °C

IN(th)

1.3

0.8

1.7

2.2

I = 2.4 mA, T = 150 °C

µA

On state input current

On-state resistance

IN(on)

mꢀ

DS(on)

V = 5 V, I = 4.6 A, T = 25 °C

V = 5 V, I = 4.6 A, T = 150 °C

On-state resistance

V = 10 V, I = 4.6 A, T = 25 °C

DS(on)

5.5

V = 10 V, I = 4.6 A, T = 150 °C

4.6

Nominal load current

T < 150°C, V = 10 V, T = 85 °C, SMD

D(Nom)

12.6

15.3

Nominal load current

V = 10 V, V = 0.5 V, T = 85 °C, T < 150°C

D(ISO)

Current limit (active if V >2.5 V)

D(lim)

V = 10 V, V = 12 V, t = 200 µs

@ 6 cm cooling area

Device switched on into existing short circuit (see diagram Determination of I

). If the device is in on condition

D(lim)

and a short circuit occurs, these values might be exceeded for max. 50 µs.

not subject to production test, calculated by R

and R

thJA

ds(on)

Page 3

2004-03-05

BTS 142 D

Electrical Characteristics

Parameter

Symbol

Values

typ. max.

Unit

at T = 25°C, unless otherwise specified

min.

Dynamic Characteristics

120

1.5

Turn-on time

V to 90% I :

µs

R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V

Turn-off time

V to 10% I :

off

R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V

0.3

Slew rate on

70 to 50% V :

-dV /dt

V/µs

DS on

R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V

Slew rate off

50 to 70% V :

dV /dt

DS off

R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V

Protection Functions

150

175

°C

Thermal overload trip temperature

Thermal hysteresis

Input current protection mode

ꢂT

IN(Prot)

180

400 µA

T = 150 °C

Unclamped single pulse inductive energy

3.5

I = 4.6 A, T = 25 °C, V = 12 V

Inverse Diode

Inverse diode forward voltage

I = 51 A, t = 250 µs, V = 0 V,

1.0

1.5

t = 300 µs

Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the data sheet. Fault conditions are considered as "outside" normal operating range.

Protection functions are not designed for continuous repetitive operation.

not subject to production test, specified by design

Page 4

2004-03-05

BTS 142 D

Block diagram

Inductive and overvoltage

output clamp

Terms

HITFET

Short circuit behaviour

Input circuit (ESD protection)

Gate Drive

Input

VIN

Source/

Ground

IIN

IDS

Page 5

2004-03-05

BTS 142 D

1 Maximum allowable power dissipation

2 On-state resistance

= f(T ) resp.

= f(T ); I =12.6A; V =10V

tot

= f(T ) @ R

=55 K/W

thJA

max.

typ.

mꢀ

Rthjc = 1.1 K/W

3.5

2.5

SMD @ 6cm2

1.5

0.5

°C

-50 -25

75 100

150

°C

-50 -25

25 50 75 100 125

175

T ;T

3 On-state resistance

4 Typ. input threshold voltage

= f(T ); I = 12.6A; V =5V

= f(T ); I = 1.2 mA; V = 12V

IN(th)

max.

typ.

mꢀ

1.6

1.4

1.2

0.8

0.6

0.4

0.2

°C

-50 -25

25 50 75 100 125

175

°C

-50 -25

75 100

150

Page 6

2004-03-05

BTS 142 D

5 Typ. transfer characteristics

6 Typ. short circuit current

I = f(Tj); V =12V

D(lim)

I =f(V ); V =12V; T

=25°C

Jstart

Parameter: V

Vin=10V

°C

-50 -25

25 50 75 100 125

175

7 Typ. output characteristics

8 Off-state drain current

I =f(V ); T

=25°C

= f(T )

Jstart

DSS

Parameter: V

µA

10V

max.

17.5

12.5

typ.

7.5

Vin=3V

2.5

°C

-50 -25

25 50 75 100 125

175

Page 7

2004-03-05

BTS 142 D

10 Typ. transient thermal impedance

9 Typ. overload current

= f(t), V =12 V, no heatsink

=f(t ) @ 6 cm cooling area

D(lim)

thJA p

Parameter: T

Parameter: D=t /T

jstart

10 ²

K/W

D=0.5

-40°C

10 ¹

10 ⁰

0.2

0.1

25°C

85°C

0.05

0.02

0.01

150°C

10 ^-1

10 ^-2

10 ^-3

Single pulse

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-210 ^-110 ⁰10 ¹

10 ³

0.5

1.5

2.5

3.5

11 Determination of I

D(lim)

= f(t); t = 200µs

D(lim)

Parameter: T

Jstart

-40°C

25°C

85°C

150°C

0.1

0.2

0.3

0.4

0.6

Page 8

2004-03-05

BTS 142 D

Package

Ordering Code

P-TO-252-3-11

Q67060-S7401-A3

+0.15

6.5

-0.05

+0.05

2.3

-0.10

±0.1

5.4

+0.08

-0.04

(5)

0.5

+0.20

0.9

-0.01

0...0.15

0.15 max.

per side

+0.08

-0.04

0.5

±0.1

0.75

2.28

0.1

4.57

0.25

A B

All metal surfaces tin plated, except area of cut.

Page 9

2004-03-05

BTS 142D

Revision History :

2004-03-05

Previous version :

2003-04-22

Page

2, 4

2, 3

Subjects (major changes since last revision)

Footnote 2 extended to Vin<0V, E_totand ∆T_jT

Footnote 5 implemented to P_tot, I_D(nom)and I_D(ISO)

ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.

standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4

Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1

climatic category changed from DIN IEC 68-1 to DIN EN 60068-1

_IN(th)test conditions from I_D=1.2mA to I_D=2.4mA

For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany

or the Infineon Technologies Companies and Representatives worldwide: see our webpage at

http://www.infineon.com

HITFET^®, SIPMOS^®are registered trademarks of Infineon Technologies AG.

Edition 2004-02-02

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee

of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your

nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide

(see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the

types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Page 10

2004-03-05

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BTS142D产品参数

型号:	BTS142D
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	INFINEON TECHNOLOGIES AG
零件包装代码：	TO-252
包装说明：	TO-252, SMSIP3H,.38,90TB
针数：	4
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	1.1
Is Samacsys：	N
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
驱动器位数：	1
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
长度：	6.5 mm
湿度敏感等级：	1
功能数量：	1
端子数量：	2
输出电流流向：	SINK
最大输出电流：	4.6 A
标称输出峰值电流：	45 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	TO-252
封装等效代码：	SMSIP3H,.38,90TB
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	12/24 V
认证状态：	Not Qualified
筛选级别：	AEC-Q100
座面最大高度：	2.5 mm
子类别：	Peripheral Drivers
标称供电电压：	12 V
表面贴装：	YES
技术：	MOS
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子节距：	2.28 mm
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	120 µs
接通时间：	120 µs
宽度：	6.22 mm
Base Number Matches：	1

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