BTS3256D各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号BTS3256D的概述

芯片BTS3256D的概述 BTS3256D是一款来自德国Infineon Technologies AG的高效能、集成化的开关控制芯片，广泛应用于汽车、工业和消费电子领域。它以其高集成度、低功耗和优良的热管理控制能力被广泛应用于横向电机控制和各种有源负载管理系统。其设计目标是提供一个可靠的解决方案，以便有效地控制电源，同时确保在各种工作条件下的安全性和稳定性。 BTS3256D通过高侧开关配置，可直接驱动负载，例如电动机、继电器和LED灯等。该芯片内部集成了多个保护功能，如过流、过温和锁定保护，确保器件和负载的可靠性与安全性。此外，BTS3256D具备PWM调制速率调整能力，便于进行负载的调速控制。芯片BTS3256D的详细参数 BTS3256D芯片的具体规格如下： - 工作电压（V_CC）: 5V至36V - 输出电流（I_OUT）: 最大可达45A - 开启电压（V_GS）: ...

产品型号BTS3256D的Datasheet PDF文件预览

HITFET™

Smart Low Side Power Switch

BTS3256D

10 mΩ smart power single channel low side switch with restart and variable slew rate

Datasheet

Rev. 1.0, 2009-05-05

Automotive

Smart Low Side Power Switch

HITFET - BTS 3256D

Table of Contents

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2.1

BTS 3256D Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3.1

3.2

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Assignment BTS 3256D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.1

4.2

4.3

Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Supply Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Under Voltage Lock Out / Power On Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Electrical Characteristics - Supply and Input Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5.1

5.1.1

5.2

5.3

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Output Timings and Slopes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Electrical Characteristics - Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6.1

6.2

6.3

6.4

Control and Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Readout of Fault Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Electrical Characteristics - Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

7.1

7.2

7.3

Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Electrical Characteristics - Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

8.1

8.2

8.3

8.4

9.1

9.2

Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

BTS3256D

BTS 3256D

Overview

The BTS 3256D is a single channel low-side power switch in

PG-TO-252-5-11 package providing embedded protective functions.

This HITFET™ is designed for automotive and industrial

applications with outstanding protection and control features.

The power transistor is a N-channel vertical power MOSFET.

The device is controlled by a chip in Smart Power Technology.

PG-TO-252-5-11

Basic Features

•

Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation

Max. switching Frequency 12kHz

Clear detection of digital fault signal also during fast PWM operation due to restart delay time

Thermal and overload protection with time controlled auto restart behavior

Time and Power limited active current limitation

Minimum R_DS(on)achieved with 3.3V or 5V logic input

Electrostatic discharge protection (ESD)

Very low leakage current

Green Product (RoHS compliant)

AEC (Automotive Electronics Council) Stress Test Qualification

Table 1

Basic Electrical Data

Operating voltage

Over voltage protection

V_SOP

V_{D (AZ)}

5.5 V.... 30 V

40 V

Maximum ON State resistance at T_j= 150°C

Typical ON State resistance at T_j= 25°C

Nominal load current

R_DS(ON,max)20 mΩ

R_DS(ON,typ)10 mΩ

I_D(nom)

I_D(lim)

7.5 A

42 A

Minimum current limitation

Type

Package

BTS 3256D

PG-TO-252-5-11

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Overview

Digital Diagnostic Features

•

Over temperature

Over load

Short circuit

Clear detection due to a restart delay time

Protection Functions

•

Enhanced short circuit protection with time and power limited active current limitation

Under voltage lock out

Over temperature with time and temperature controlled auto restart

Over load with power and time controlled auto restart

ESD protection

Application

•

All types of resistive, inductive and capacitive loads

Suitable for loads with inrush current, such as motors, coils, solenoids or lamps

Suitable for EMC optimized switching in slow operation mode

Suitable for higher speed PWM controlled loads in fast operation mode

Replacement of electromechanical relays, fuses and discrete circuits

Micro controller compatible low side power switch with digital feedback for 12V loads

Detailed Description

The BTS 3256D is an autorestart single channel low-side power switch in PG-TO-252-5-11 package providing

embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads.

The ESD protection of the V_Sand IN/Fault pin is referenced to GND.

The BTS 3256D is supplied by the V_SPin. This Pin should be connected to a reverse protected battery line. The

supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows the device to operate

in the lowest ohmic range independent of the input signal level, 3.3 V or 5 V . For slow PWM application the device

offers smooth turn-on and off due to the embedded edge shaping function, to reduce EMC noise. Furthermore the

SRP pin can be used to customize the slew rate of the device in a wide range.

The Device is designed for driving automotive loads like motors,valves, coils or bulbs in continous or PWM mode.

The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET

is limiting the Drain-Source voltage to a specified level. This function is available even without any supply.

The over temperature protection prevents the device from overheating due to overload and/or bad cooling

conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After

thermal shutdown the device stays off for the specified restart delay time to enable a clear feedback readout on

the microcontroller. After this time the device follows the IN signal state.

At high dynamic overload conditions, such as short circuit, the device will either turn off immediately due to the

implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay

time. Shutdown of the device is triggered if the power dissipation during limitation is above the over power

threshold. The short circuit shutdown is a timed restart function. The device will stay off for the specified time and

afterwards follow the IN signal state. In order to reduce the device stress the edge shaping is disabled during

protective turn off.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

BTS 3256D Block Diagram

V_S

Drain

Slew rate

SRP

control

Under

voltage

lockout

Over-

voltage

Protection

Over-

temperature

Protection

Gate

Driving

Unit

IN / Fault

Short

circuit

Protection

ESD

protection

Overload

Protection

GND

BlockDiagram.emf

Figure 1

Block Diagram for the BTS3256D

2.1

Voltage and current naming definition

Following figure shows all the terms used in this datasheet, with associated convention for positive values.

V_bb

I_S

R_L

V_S

I_D

Drain

SRP

V_D

V_SRP

I_IN

IN / Fault

GND

I_GND

V_IN

GND

Terms.emf

Figure 2

Terms

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Pin Configuration

3.1

Pin Assignment BTS 3256D

(top view )

GND

SRP

Drain

6 (Tab)

V_S

PinConfiguration.emf

Figure 3

Pin Configuration

3.2

Pin Definitions and Functions

Symbol

Function

V_S

Supply Voltage;

Connected to Battery Voltage with Reverse protection Diode and Filter against EMC

Control Input and Status Feedback; Digital input 3.3 V or 5 V logic.

3, Tab Drain

Drain output;

Protected low side power output channel, usually connected via load to battery

SRP

GND

Slew Rate Preset; Used to define slew rate, see Chapter 7.2 for details

Ground; Power ground, pin connection needs to carry the load current from Drain

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

General Product Characteristics

4.1

Absolute Maximum Ratings

Absolute Maximum Ratings ¹⁾

T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Max.

Unit Conditions

Min.

Voltages

4.1.1

4.1.2

4.1.3

4.1.4

Supply voltage

Supply voltage during active clamping

Drain voltage

Drain voltage for short circuit protection V_D(SC)

Logic input voltage

V_S

V_S(pulse)

V_D

-0.3

–

45²⁾

40³⁾

–

4.1.5

4.1.6

V_IN

V_SRP

5.5

–

Slew Rate Preset maximum voltages

Energies

4.1.7

Unclamped single pulse inductive

energy

E_AS

0.3

I_D= 22 A;

V_bb= 30 V

Temperatures

4.1.8

4.1.9

Junction Temperature

Storage Temperature

T_j

T_stg

-40

-55

150

°C

–

ESD Susceptibility

4.1.10 ESD Resistivity

V_ESD

OUT

HBM⁶⁾

on input pins (IN,SRP,VS)

on Drain and GND pins

-4

-8

1) Not subject to production test, specified by design.

2) Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life.

3) Active clamped.

4) The Device can not be switched on if V_D> V_D(SC)

5) SRP Pin is driven by an internal current source, so active driving from outside is not required,it may affect lifetime and could

cause parameter shifts outside the range given in datasheet

6) ESD susceptibility, HBM according to EIA/JESD 22-A114B, section4

Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

General Product Characteristics

4.2

Functional Range

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

5.5

–

Max.

–

4.2.1

4.2.2

Supply Voltage

Supply current in on

V_S

I_S

Note:Within the functional range the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the related electrical characteristics table.

4.3

Thermal Resistance

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

0.9

Max.

1.1

–

4.3.1

4.3.2

Junction to Case¹⁾

R_thjC

R_thjA

–

K/W

–

Junction to ambient¹⁾

@min. footprint

@ 6 cm² cooling

area, see Figure 4

1) Not subject to production test, specified by design

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

General Product Characteristics

K/W

100

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

0.1

10^-6

10^-5

10^-4

10^-3

10^-2

t_p

10^-1

10²

10³s

Zth.emf

Figure 4

Typical transient thermal impedance

_thJA= f(t_p) , Pulse D = tp/T, T_a= 25 °C

Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for

drain connection. PCB mounted vertical without blown air.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Supply and Input Stage

5.1

Supply Circuit

The Supply pin V_Sis protected against ESD pulses as shown in Figure 5.

Due to an internal voltage regulator the device can be supplied from a reverse polarity protected battery line.

5.5V .. 30V

BTS3256 D

V_S

Regulator

Z_D

GND

Supply .emf

Figure 5

Supply Circuit

5.1.1

Under Voltage Lock Out / Power On Reset

In order to ensure a stable device behavior under all allowed conditions the Supply voltage V_Sis monitored by the

under voltage lock out circuit. All device functions are only given for supply voltages above under voltage lockout.

There is no failure feedback for V_S< V_SUVON

Device

functional

off

V_SUVOFF

V_SUVON

UVLO.emf

Figure 6

Under Voltage Lock Out

5.2

Input Circuit

Figure 7 shows the input circuit of the BTS 3256D. It’s ensured that the device switches off in case of open input

pin. A Zener structure protects the input circuit against ESD pulses. As the BTS 3256D has a supply pin, the

operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status

feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis “Readout of

Fault Information” on Page 20.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Supply and Input Stage

IN/Fault

20µA

1.0mA

100µA

3.0mA

GND

input.emf

Figure 7

Input Circuit

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Supply and Input Stage

5.3

Electrical Characteristics - Supply and Input Stages

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Under Voltage Lockout

5.3.1

5.3.2

5.3.3

UV-switch-on voltage

UV-switch-off voltage

UV-switch-off hysteresis

V_SUVON

V_SUVOFF4.0

V_SUVHY

–

0.2

5.6

5.5

–

V_SUVON- V_SUVOFF

Digital Input / Fault Feedback

5.3.4

5.3.5

5.3.6

Low level voltage

High level voltage

Input pull down current

V_INL

V_INH

I_IN

-0.3

2.0

–

0.8

5.5

100

µA

–

V_IN= 5.3 V;

no fault condition

5.3.7

Input pull down current in Fault

I_IN-Fault

V_IN= 5.3 V; all fault

conditions

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

The power stage is built by a N-channel vertical power MOSFET (DMOS).

6.1

Output On-state Resistance

The on-state resistance depends on the junction temperature T_J. Figure 8 shows this dependence for the typical

on-state resistance R_DS(on)

typ.

-50 -25

25 50 75 100 125 150 175

T [ °C ]

rdson_Tj.emf

Figure 8

Typical On-State Resistance R_DSon= f(T_J), V_S= 10 V, V_IN= high

typ.

V_S[ V ]

rdson_Vs.emf

Figure 9

Typical On-State Resistance R_DSon= f(V_S), V_IN= high, T_ambient= 25 °C

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

6.2

Output Timings and Slopes

A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized

for low EMC emission. Figure 10 shows the timing definition.

High

Low

t_on

t_off

t_ond

t_offd

V_D

V_bb

90 %

80 %

|dv/dt| shaping

|dv/dt|off

|dv/dt|on

20 %

10 %

|dv/dt| shaping

OutputTiming.em

Figure 10 Definition of Power Output Timing for Resistive Load

In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow

slew rate settings. For best performance of the edge shaping, the supply pin V_Sshould be connected to battery

voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the

electrical characteristics table below.

6.3

Inductive Output Clamp

When switching off inductive loads with low-side switches, the Drain Source voltage V_Drises above battery

potential, because the inductance intends to continue driving the current.

The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage V_Dat a certain

level. See Figure 11 for more details.

Drain

GND

output_clamp_curcui.temf

Figure 11 Output Clamp

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

Overtemperature or

short circuit detected

High

Low

I_D

Von

V_DAZ

V_bb

inductive_output_clamp.emf

Figure 12 Switching off an inductive Load

While demagnetization of inductive loads, energy has to be dissipated in the BTS 3256D. This energy can be

calculated with following equation:

_bb– V_D(AZ)





R_LI_L

_bb– V

-------------------------------

------

E = V_D(AZ)

ln 1 – --------------------------------- + I_L





R_L



_D(AZ)

Following equation simplifies under assumption of R_L= 0











V_bb

E = LI_L

1 – -------------------------------

_bb– V

_D(AZ)

Figure 13 shows the inductance / current combination the BTS 3256D can handle.

For maximum single avalanche energy please also refer to E_ASvalue in “Energies” on Page 7.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

10,00

1,00

0,10

0,01

Max.

EAS.emf

I_D[ A ]

Figure 13 Maximum allowed inductance values for single switch off (EAS)

L=f (I_L), T_j,start= 150 °C, V_bb=30V, R_L= 0 Ω

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

6.4

Electrical Characteristics - Power Stage

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Power Supply

6.4.1

On-state resistance

R_DS(on)

–

mΩ

T_J= 25 °C;

I_D= 20 A;

V_IN= high

V_S= 10 V

–

mΩ

T_J= 150 °C;

I_D= 20 A;

V_IN= high

V_S= 10 V

T_J< 150 °C;

T_A85 °C SMD²⁾;

V_IN= high;

V_S≥ 10 V;

V_DS= 0.5 V

6.4.2

6.4.3

Nominal load current¹⁾

ISO load current¹⁾

I_D(nom)

I_D(ISO)

I_DSS

7.5

8.7

–

T_J< 150 °C;

T_C= 85 °C;

V_IN= high

V_S≥ 10 V;

V_DS= 0.5 V;

6.4.4

6.4.5

Off state drain current

–

µA

V_D= 32 V;

V_IN= low

T_J= 85 °C;

V_D= 13.5 V;

V_IN= low

µA¹⁾

Dynamic Characteristics

6.4.6 power up settling time

t_init

–

µs

Vs > 6V

first rising edge on

IN pin.

Timings with fastest slew rate setting

6.4.7

6.4.8

6.4.9

Turn-on delay

Turn-on time

Turn-off delay

t_{ond_fast}

–

µs

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

t_{on_fast}

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

t_{offd_fast}

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

6.4.10 Turn-off time

6.4.11 Slew rate on

6.4.12 Slew rate off

t_{off_fast}

3.8

–

µs

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

-dV_D/dt_{on_fast}

1.2

–

2.2

V/µs

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

dV_D/dt_{off_fast}

2.2

R_L= 2.2 Ω;

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

6.4.13 Slew rate during edge

shaping

|dV/dt|_{shaping_fast}

0.66

¹⁾R_L= 2.2 Ω

R_SRP= OPEN;

V_bb= V_S= 13.5 V;

see Figure 10

Timings with slowest slew rate setting

6.4.14 Turn-on delay

6.4.15 Turn-on time

6.4.16 Turn-off delay

6.4.17 Turn-off time

t_{ond_slow}

–

µs

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

t_{on_slow}

t_{offd_slow}

t_{off_slow}

–

200

110

220

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

–

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

150

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Power Stage

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

6.4.18 Slew rate on

6.4.19 Slew rate off

-dV_D/dt_{on_slow}

0.08

0.2

0.6

–

V/µs

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

dV_D/dt_{off_slow}

0.08

–

0.2

V/µs

R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

6.4.20 Slew rate during edge

shaping

|dV/dt|_{shaping_slow}

0.088

¹⁾R_L= 2.2 Ω;

R_SRP= GND;

V_bb= V_S= 13.5 V

see Figure 10

Inverse Diode

6.4.21 Inverse Diode forward

V_D

-0.3

-1.0

-1.5

I_D= -12 A;

V_S= 0 V;

V_IN= 0.0 V

voltage

1) Not subject to production test, specified by Design.

2) Device mounted according to EIA/JESD 52_2, FR4, 50 × 50 × 1.5 mm; 35µ Cu, 5µ Sn; 6 cm².

PCB mounted without blown air

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Control and Diagnosis

The BTS3256D provides digital fault feedback on the IN pin without the need of an ADC.

Additonally the device features an adjustable slew rate via the SRP pin.

7.1

Readout of Fault Information

The BTS 3256D provides digital status information via an increased current on the IN / Fault pin.

The voltage on this pin is pulled down to logic low when a fitting serial resistor is used. An example for the required

circuitry is shown in Figure 14. The increased current I_IN(fault)is one order of magnitude above the normal operation

current I_IN.

A 3k3 for a 3.3V µC or 5k6 for a 5V µC is recommended.

For detailed calculation please refer to “Dimensioning of serial Resistor at IN pin” on Page 26.

V_bb

V_CC

V_S

Micro

BTS3256

controller

I_DO

I_IN

IN/Fault

Fault

GND

V_DI

GND

Fault_readout.emf

Figure 14 Readout of feedback information and XOR logic in micro

7.2

Adjustable Slew Rate

In order to optimize electromagnitic emission, the switching speed of the MOSFET can be adjusted by connecting

an external resistor between SRP pin and GND. This allows for balancing between electromagnetic emissions and

power dissipation. R_SRP-minrepresents the minimum slew rate Slew rate_minand R_SRP-maxrepresents the maximum

slew rate Slew rate_max

A short to GND causes the minimum slew rate Slew rate_min.

Open pin condition causes the maximum Slew rate Slew rate_max

Figure 15 shows the relation between the resistor value and the slew rate of BTS 3256D.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Control and Diagnosis

7.3

Electrical Characteristics - Diagnostic

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Slew rate control

7.3.1

7.3.2

7.3.3

7.3.4

Slew rate_min

Slew rate_15k

Slew rate_30k

Slew rate_max

Slew

rate_min

0.08

0.2

0.6

–

V/µs

R_SRP= 0 Ohm

V_S= 13.5 V;

ohmic load

R_SRP= 15 kOhm

V_S= 13.5 V;

ohmic load

R_SRP= 30 kOhm

V_S= 13.5 V;

ohmic load

SRP pin open

V_S= 13.5 V;

ohmic load

Slew

rate_15k

0.2

0.7

1.2

0.6

Slew

rate_30k

1.45

2.2

–

Slew

rate_max

3.8

2,5

1,5

0,5

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80

R_SRP[ kΩ ]

Slewrate.emf

Figure 15 Typical relation between slew rate and resistor values used on R_SRP(V_bat=13.5V)

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Protection Functions

The device provides embedded protection functions against over temperature, over load and short circuit.

Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operation.

8.1

Thermal Protection

The device is protected against over temperature resulting from overload and / or bad cooling conditions.

The BTS 3256D has a thermal restart function. When overheating occurs, the device switches off for the restart

delay time t_restart. After this time the device restarts if the temperature is below threshold and the IN has logic high

level. The fault feedback is activated during over temperature situation. See Figure 16 for the restart behavior.

The diagram naming refers to Figure 14.

After delay time , IN is high

Over temperature is gone

Thermal shutdown

High

Don’t care

Low

JSD

∆T_JSD

I_IN

I_INfault

I_INnom

V_DI

high

low

t_restart

thermal_fault_autorestart.emf

Figure 16 Status Feedback via Input Current at Over temperature

8.2

Over Voltage Protection

The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage V_Dat a certain

level. This stage is also used for inductive clamping.

See “Inductive Output Clamp” on Page 14 for details.

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Protection Functions

8.3

Short Circuit Protection

The condition short circuit is an overload condition of the device.

In a short circuit condition, the resulting dI / dt is a function of the short circuit resistance. The BTS3256D

incorporates 2 shut down strategies for maximum robustness in the presence of short circuits:

- immediate shut down in the case of low ohmic shorts by power detection exceeding P_max

- over temperature shut down in the case of an overload condition

The additional feature of this device is a limitation of the load current to I_limfor a maximum time of t_lim.

If the condition is normalized in a shorter time than t_lim, the device stays on, if not the device switch off for t_restart

and tries to restart in case the IN pin is still high.

From first switch off the fault feedback will be activated during t_restartand continues until the IN pin goes low or

normal condition is reached.

Figure 18 shows the behavior mentioned above. In this example first a shorted load occurs which causes the

device to limit the current. The device stays on, because the load current returns to normal condition before t_restart

In the second switch on, the short circuit is permanent and the device switches OFF after maximum limiting time,

stays OFF for the blanking time regardless of the input pin condition and then stays OFF according to the IN pin

low condition.

The definitions of voltages and currents are in respect to Figure 14. The behavior of V_DIalso depends on R_IN.

Protective Shut Down

Safe operation area

V_Drain[ V ]

Power_limitation.emf

Figure 17 Typical Power limitation behavior I_DS/ V_DS

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Protection Functions

Inrush

Overload

overload

shut off

Overload

situation

V_IN

high

Don’t care

low

I_D

I_lim

t_lim

I_Dnom

I_IN

I_INfault

I_INnom

V_DI

high

low

t_restart

protection_behaviour.emf

Figure 18 Short Circuit during On State, Typical Behavior for Ohmic Loads

The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Figure 17.

The test setup for short circuit characterization is shown in Figure 19. The BTS 3256D is a low side switch.

Therefore it can be assumed that the micro controller and device GND connection have a low impedance. All

impedance in the short circuit path is merged in the short circuit resistance R_SCand short circuit inductance L_SC.

I_D

R_SC

L_SC

Drain

Vcc

V_S

V_bb

Control circuit

SRP

GND

R_SRP

GND

short_circuit_schematic.emf

Figure 19 Test Setup for Short Circuit Characterization Test

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Protection Functions

8.4

Electrical Characteristics - Protection

V_S= 5.5 V to 30 V, T_j= -40 °C to +150 °C

All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Thermal Protection

8.4.1

8.4.2

Thermal shut down junction

T_JSD

150

–

175¹⁾

–

°C

–

temperature

Thermal hysteresis

∆T_JSD

Over Voltage Protection

8.4.3

Drain source clamp voltage

V_D(AZ)

–

I_D= 10 mA;

V_S= 0.0 V;

V_IN= 0.0 V

I_D= 8 A;

V_S= 0.0 V;

V_IN= 0.0 V

Short Circuit Protection

8.4.4

8.4.5

8.4.6

current limitation level

max. power switch OFF threshold P_max

max. time for current limitation

before shut OFF

restart delay time

I_D(lim)

300

3.5

400

650

6.5

ohmic load

–

t_lim

resistive load

–

8.4.7

t_restart

100

1) Not subject to production test, specified by design.

2) In case of inductive loads the device needs to increase the VDS voltage during current limitation.

This can trigger the over Power protection switch off earlier as t_lim

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Application Information

Note:The following information is given as a hint for the implementation of the device only and shall not be

regarded as a description or warranty of a certain functionality, condition or quality of the device.

9.1

Dimensioning of serial Resistor at IN pin

In order to use the digital feedback function of the device, there must be a serial resistor used between the IN pin

and the driver (micro controller).

To calculate this serial resistor on the input pin, three device conditions and of course the driver (micro controller)

abilities need to be taken into account.

Figure 20 shows the circuit used for reading out the digital status.

V_bb

Microcontroller

I_DO

V_CC

V_RIN

V_S

BTS3256

IN/Fault

Fault information

20µA

1.0mA

SRP

V_DO

V_DI

100µA

3.0mA

GND

R_SRP

GND

Fault_R1dim.emf

Figure 20 Circuitry to readout fault information

Note:This is a very simplified example of an application circuit. The function must be verified in the real application.

Conditions to be meet by the circuitry:

During normal operation V_INmust be higher than V_INH,minto switch ON.

During fault condition the max. capability of the driver (micro controller) must not be exceeded and the logic low

level at DI must be ensured by a voltage drop over the serial resistor R_INwhile the device fault current is flowing.

Conditions in formulas:

•

µC_{output current,min}> µC_{HIGH,max /}R_IN> I_{INFault_min}

with µC_{output current,min}referring to the µC maximum output current capability

with µC_HIGH,maxreferring to the maximal high output voltage of the µC driving stage

This condition is valid during status feedback operation mode

_IN= µC_HIGH,min- (R_{IN *}I_IN,max) > V_INH,min

with µC_HIGH,minreferring to the minimal high output voltage of the µC driving stage

This condition is valid during normal operation mode

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Application Information

•

µC_HIGH,max- (R_{IN *}I_IN-Fault,min) < µC(DI)_L,max

with µC(DI)_L,maxreferring to the maximum logic low voltage of the µC input stage

The maximum current is either defined by the BTS 3256D or the µC driving stage

This condition is valid during status feedback operation mode

Out of this conditions the minimum and maximum resistor values can be calculated.

For a typical 5V micro controller with output current capability in the 3 mA range,

a resistor range from 7.5 kΩ down to 4.5 kΩ can be used.

For a typical 3.3V micro controller a range from 4.6 kΩ to 2.5 kΩ is suitable.

9.2

Further Application Information

•

For further information you may contact http://www.infineon.com/hitfet

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Package Outlines

+0.05

+0.15

2.3

-0.10

6.5

-0.10

+0.08

±0.1

5.4

0.9

-0.04

±0.1

0...0.15

0.15 max

per side

+0.08

0.5

±0.1

5x0.6

-0.04

1.14

0.1

4.56

0.25

A B

GPT09161

All metal surfaces tin plated, except area of cut.

Figure 21 PG-TO-252-5-11 (Plastic Green Thin Outline Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e

Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.

Dimensions in mm

Datasheet

Rev. 1.0, 2009-05-05

Smart Low Side Power Switch

HITFET - BTS 3256D

Revision History

Version

Rev. 1.0

Date

2009-05-05

Changes

released Datasheet

Datasheet

Rev. 1.0, 2009-05-05

Edition 2009-05-05

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values

stated herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

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BTS3256D产品参数

型号:	BTS3256D
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	INFINEON TECHNOLOGIES AG
零件包装代码：	TO-252
包装说明：	, SMSIP5H,.39,44TB
针数：	4
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.35
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	526659
Samacsys Pin Count：	5
Samacsys Part Category：	Integrated Circuit
Samacsys Package Category：	Other
Samacsys Footprint Name：	PG-TO252-5-11_FFW
Samacsys Released Date：	2018-11-16 00:51:40
Is Samacsys：	N
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
驱动器位数：	1
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PSSO-G5
JESD-609代码：	e3
长度：	6.5 mm
湿度敏感等级：	3
功能数量：	1
端子数量：	5
输出电流流向：	SINK
最大输出电流：	0.003 A
标称输出峰值电流：	55 A
封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SMSIP5H,.39,44TB
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5.5/30 V
认证状态：	Not Qualified
座面最大高度：	2.35 mm
子类别：	Peripheral Drivers
最大供电电压：	30 V
最小供电电压：	5.5 V
标称供电电压：	10 V
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子节距：	1.14 mm
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	110 µs
接通时间：	60 µs
宽度：	6.22 mm
Base Number Matches：	1

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