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  • BTS5230GS图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • BTS5230GS 现货库存
  • 数量3925 
  • 厂家INFINEON 
  • 封装SOP 
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  • BTS5230GS图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BTS5230GS 现货库存
  • 数量1208 
  • 厂家INFINEON 
  • 封装SOP14 
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  • 深圳市科时进电子有限公司

     该会员已使用本站11年以上
  • BTS5230GS 现货库存
  • 数量9270 
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  • 深圳市励创源科技有限公司

     该会员已使用本站2年以上
  • BTS5230GS 现货热卖
  • 数量35600 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • BTS5230GS
  • 数量13880 
  • 厂家Infineon Technologies 
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  • 深圳市楚胜电子有限公司

     该会员已使用本站18年以上
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  • 数量22358 
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  • 房间现货,价格优势。
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  • 深圳市瑞天芯科技有限公司

     该会员已使用本站7年以上
  • BTS5230GS
  • 数量20000 
  • 厂家INFINEON 
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  • 深圳现货库存,保证原装正品
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
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  • 数量65000 
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  • 真实库存全新原装正品!代理此型号
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  • 深圳市英德州科技有限公司

     该会员已使用本站2年以上
  • BTS5230GS
  • 数量45000 
  • 厂家Infineon(英飞凌) 
  • 封装14-SOIC(0.154,3.90mm 宽) 
  • 批号1年内 
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  • 华富芯(深圳)智能科技有限公司

     该会员已使用本站7年以上
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  • 数量15000 
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  • 深圳市澳亿芯电子

     该会员已使用本站13年以上
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  • 深圳市特拉特科技有限公司

     该会员已使用本站2年以上
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  • 数量18000 
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  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
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  • 数量865000 
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  • 深圳市创芯联科技有限公司

     该会员已使用本站9年以上
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  • 数量13000 
  • 厂家infineon 
  • 封装DSO14 
  • 批号24+ 
  • 原厂货源/正品保证,诚信经营,欢迎询价
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  • 深圳市英信达电子有限公司

     该会员已使用本站14年以上
  • BTS5230GS
  • 数量3635 
  • 厂家INFINEON 
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  • 批号2010+ 
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  • 深圳市华科泰电子商行

     该会员已使用本站13年以上
  • BTS5230GS
  • 数量8968 
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  • 批号05+ 
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  • 深圳市恒达亿科技有限公司

     该会员已使用本站16年以上
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  • 数量4500 
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  • 深圳市恒达亿科技有限公司

     该会员已使用本站12年以上
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  • 数量3000 
  • 厂家INFINEON 
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  • 深圳市恒达亿科技有限公司

     该会员已使用本站12年以上
  • BTS5230GS
  • 数量4500 
  • 厂家INFINEON 
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  • 批号25+ 
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • BTS5230GS
  • 数量10 
  • 厂家INFINEON/英飞凌 
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     该会员已使用本站13年以上
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  • 数量14081 
  • 厂家INTERSIL 
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  • 深圳市卓越微芯电子有限公司

     该会员已使用本站12年以上
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  • 数量5500 
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
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  • 数量12500 
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  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • BTS5230GS .
  • 数量5370 
  • 厂家Infineon 
  • 封装 
  • 批号2024+ 
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  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • BTS5230GS
  • 数量12736 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号23+ 
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  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • BTS5230GS
  • 数量16210 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号23+ 
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  • 0755-83209630 QQ:2885348317QQ:2885348339
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  • 上海熠富电子科技有限公司

     该会员已使用本站15年以上
  • BTS5230GS
  • 数量16065 
  • 厂家Infineon 
  • 封装N/A 
  • 批号2024 
  • 上海原装现货库存,欢迎查询!
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  • 深圳市宇集芯电子有限公司

     该会员已使用本站6年以上
  • BTS5230GS
  • 数量99000 
  • 厂家INFINEON 
  • 封装SOP-14 
  • 批号23+ 
  • 一级代理进口原装现货、假一罚十价格合理
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  • 深圳市富科达科技有限公司

     该会员已使用本站13年以上
  • BTS5230GS
  • 数量12100 
  • 厂家INFINEON 
  • 封装 
  • 批号2020+ 
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  • 北京睿科新创电子中心

     该会员已使用本站9年以上
  • BTS5230GS
  • 数量5618 
  • 厂家INFINEON 
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  • 全新原装进口
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  • 深圳市芳益电子科技有限公司

     该会员已使用本站10年以上
  • BTS5230GS
  • 数量2330 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号2023+ 
  • 原装现货库存 低价出售 欢迎加Q详谈 诚信经营 可长期合作
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • BTS5230GS
  • 数量3695 
  • 厂家INFINEON 
  • 封装SOP 
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • BTS5230GS
  • 数量3635 
  • 厂家Infineon 
  • 封装PG-DSO-14-37 
  • 批号2023+ 
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  • 深圳市励创源科技有限公司

     该会员已使用本站2年以上
  • BTS5230GS
  • 数量35600 
  • 厂家Infineon 
  • 封装SOP 
  • 批号21+ 
  • 诚信经营,原装现货,假一赔十,欢迎咨询15323859243
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BTS5230GS
  • 数量1208 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
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  • 北京力通科信电子有限公司

     该会员已使用本站10年以上
  • BTS5230GS
  • 数量35000 
  • 厂家inf 
  • 封装vpe: 2500/f/tr/smd 
  • 批号dc0739 
  • 7-10天原装特价*热卖
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  • 上海磐岳电子有限公司

     该会员已使用本站11年以上
  • BTS5230GS
  • 数量5800 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号2024+ 
  • 全新原装现货,杜绝假货。
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  • 深圳市顺兴源微电子商行

     该会员已使用本站7年以上
  • BTS5230GS
  • 数量6890000 
  • 厂家INFINEON 
  • 封装SOP14 
  • 批号16+ 
  • 原装现货,低价出售
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  • 深圳市欧瑞芯科技有限公司

     该会员已使用本站11年以上
  • BTS5230GS
  • 数量9500 
  • 厂家INFINEON/英飞凌 
  • 封装14-SOIC(0.154,3.90mm 宽) 
  • 批号24+ 
  • 绝对原装正品,可开专票,欢迎采购!!!
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产品型号BTS5230GS的概述

芯片BTS5230GS的概述 BTS5230GS是一种高效的功率MOSFET驱动器,由德国意法半导体(STMicroelectronics)公司设计和制造。该芯片专为汽车和工业应用中的高压和高电流开关控制而开发,能够实现可靠的控制和保护功能。由于其优异的热特性和紧凑的封装设计,它在需要高效率和紧凑空间的场景中表现尤为突出。 BTS5230GS通常用于电动汽车、工业电源、LED驱动器和电机控制等应用领域。该器件采用高集成设计,能够在各种极端环境下稳定工作,使其成为汽车电子和工业自动化市场上的热门选择。 芯片BTS5230GS的详细参数 BTS5230GS的技术参数如下: 1. 工作电压范围:4.5V至36V 2. 最大连续电流:未装散热器情况下可承受的连续电流为30A 3. 脉冲电流:最大脉冲电流可达60A 4. 导通电阻:低于10mΩ(在25°C下) 5. 开关时间:开关上升时间和下降...

产品型号BTS5230GS的Datasheet PDF文件预览

Data Sheet, V2.0, June 2005  
BTS 5230GS  
Smart High-Side Power Switch  
PROFET  
Two Channels, 140 mΩ  
Automotive Power  
N e v e r s t o p t h i n k i n g .  
Smart High-Side Power Switch  
BTS 5230GS  
Table of Contents  
Page  
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3  
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5  
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5  
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
2.1 Pin Assignment BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10  
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18  
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
5 Package Outlines BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24  
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25  
Data Sheet  
2
V2.0, 2005-06-13  
Smart High-Side Power Switch  
PROFET  
BTS 5230GS  
Product Summary  
P-DSO-14-18  
The BTS 5230GS is a dual channel high-side power  
switch in P-DSO-14-18 package providing embedded  
protective functions.  
The power transistor is built by a N-channel vertical  
power MOSFET with charge pump. The device is  
monolithically integrated in Smart SIPMOS  
technology.  
Operating voltage  
Vbb(on)  
4.5 .. 28 V  
41 V  
Over voltage protection  
Vbb(AZ)  
RDS(ON)  
IL(nom)  
IL(LIM)  
On-State resistance  
140 mΩ  
1.8 A  
Nominal load current (one channel active)  
Current limitation  
8 A  
Current limitation repetitive  
Standby current for whole device with load  
IL(SCr)  
Ibb(OFF)  
3 A  
2.5 µA  
Basic Features  
• Very low standby current  
• 3.3 V and 5 V compatible logic pins  
• Improved electromagnetic compatibility (EMC)  
• Stable behaviour at undervoltage  
• Logic ground independent from load ground  
• Secure load turn-off while logic ground disconnected  
• Optimized inverse current capability  
Type  
Ordering Code  
Package  
P-DSO-14-18  
BTS 5230GS  
Q67065-S6135  
Data Sheet  
3
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Protective Functions  
• Reverse battery protection without external components (GND resistor integrated)  
• Short circuit protection  
• Overload protection  
• Multi-step current limitation  
• Thermal shutdown with restart  
• Thermal restart at reduced current limitation  
• Overvoltage protection without external resistor  
• Loss of ground protection  
• Electrostatic discharge protection (ESD)  
Diagnostic Functions  
• Enable function for diagnosis pins (IS1 and IS2)  
• Proportional load current sense signal by current source  
• Open load detection in ON-state by load current sense  
• Open load detection in OFF-state by voltage source  
• Feedback on over temperature and current limitation in ON-state  
Applications  
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded  
loads  
• All types of resistive, inductive and capacitve loads  
• Suitable for loads with high inrush currents, so as lamps  
• Suitable for loads with low currents, so as LEDs  
• Replaces electromechanical relays, fuses and discrete circuits  
Data Sheet  
4
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Overview  
1
Overview  
The BTS 5230GS is a dual channel high-side power switch (two times 140 m) in  
P-DSO-14-18 package providing embedded protective functions.  
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback  
signal including current sense function and open load in off state. The diagnosis signals  
can be switched on and off by the sense enable pin SEN.  
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,  
SEN) reduce external components to a minimum.  
The power transistor is built by a N-channel vertical power MOSFET with charge pump.  
The inputs are ground referenced CMOS compatible. The device is monolithically  
integrated in Smart SIPMOS technology.  
1.1  
Block Diagram  
VBB  
channel 1  
load current  
sense  
clamp for  
inductive load  
internal  
power  
supply  
gate control  
&
charge pump  
logic  
multi step  
load current  
limitation  
open load  
detection  
IN1  
IS1  
ESD  
OUT1  
OUT2  
protection  
temperature  
sensor  
SEN  
channel 2  
control and protection circuit  
equivalent to  
IN2  
IS2  
channel 1  
RGND  
GND  
Figure 1  
Block Diagram  
Data Sheet  
5
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Overview  
1.2  
Terms  
Following figure shows all terms used in this data sheet.  
Vbb  
Ibb  
VBB  
IIN1  
IIN2  
IN1  
IN2  
V
IN1  
IL1  
VDS1  
OUT1  
OUT2  
V
IN2  
IIS1  
IIS2  
VOUT1  
VDS2  
BTS 5230GS  
IS1  
IS2  
IL2  
V
IS1  
VOUT2  
V
IS2  
ISEN  
SEN  
GND  
VSEN  
IGND  
Terms2ch. emf  
Figure 2  
Terms  
Symbols without channel number are channel related and valid for each channel  
separately  
Data Sheet  
6
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Pin Configuration  
2
Pin Configuration  
2.1  
Pin Assignment BTS 5230GS  
(top view)  
VBB  
GND  
IN1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VBB  
OUT1  
OUT1  
OUT2  
OUT2  
SEN  
IS1  
IS2  
IN2  
VBB  
8
VBB  
Figure 3  
Pin Configuration P-DSO-14-18  
Pin Definitions and Functions  
2.2  
Pin  
Symbol  
I/O  
Function  
OD  
3
IN1  
I
Input signal for channel 1  
6
IN2  
I
Input signal for channel 2  
4
IS1  
O
O
I
Diagnosis output signal channel 1  
Diagnosis output signal channel 2  
Sense Enable input for channel 1&2  
Protected high-side power output channel 1  
Protected high-side power output channel 2  
Ground connection  
5
IS2  
9
SEN  
OUT1  
OUT2  
GND  
12, 13  
10, 11  
2
O
O
-
1, 7, 8, 14 VBB  
-
Positive power supply for logic supply as well as  
output power supply  
Data Sheet  
7
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Electrical Characteristics  
3
Electrical Characteristics  
3.1  
Maximum Ratings  
Stresses above the ones listed here may cause permanent damage to the device.  
Exposure to maximum rating conditions for extended periods may affect device reliability.  
Tj = 25 °C (unless otherwise specified)  
Pos.  
Parameter  
Symbol Limit Values Unit Test  
Conditions  
min.  
max.  
Supply Voltage  
3.1.1  
3.1.2  
Supply voltage  
Vbb  
-16  
0
28  
20  
V
V
Supply voltage for full short  
circuit protection (single pulse)  
(Tj = -40°C .. 150°C)  
Vbb(SC)  
L = 8 µH  
R = 0.2 1)  
3.1.3  
3.1.4  
Voltage at power transistor  
VDS  
-
52  
40  
V
V
Supply Voltage for Load Dump Vbb(LD)  
protection  
RI = 2 2)  
RL = 12 Ω  
Power Stages  
3)  
4)  
3.1.5  
3.1.6  
Load current  
IL  
-
-
IL(LIM)  
A
J
Maximum energy dissipation EAS  
0.1  
single pulse  
I
T
L(0) = 2.1 A  
j(0) = 150°C  
5)  
3.1.7  
Power dissipation (DC)  
Ptot  
-
0.9  
W
V
Ta = 85 °C  
Tj 150 °C  
Logic Pins  
3.1.8  
Voltage at input pin  
VIN  
-5  
10  
-16  
t 2 min  
t 2 min  
t 2 min  
t 2 min  
3.1.9  
Current through input pin  
IIN  
-2.0  
-8.0  
2.0 mA  
10  
2.0 mA  
10 mA  
3.1.10 Voltage at sense enable pin  
VSEN  
-5  
-16  
V
3.1.11 Current through sense enable ISEN  
-2.0  
-8.0  
pin  
3.1.12 Current through sense pin  
Data Sheet  
IIS  
-25  
8
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Electrical Characteristics  
Tj = 25 °C (unless otherwise specified)  
Pos. Parameter  
Symbol Limit Values Unit Test  
Conditions  
min.  
max.  
Temperatures  
3.1.13 Junction Temperature  
Tj  
-40  
-
150 °C  
3.1.14 Dynamical temperature  
increase while switching  
Tj  
60  
°C  
3.1.15 Storage Temperature  
Tstg  
-55  
150 °C  
ESD Susceptibility  
3.1.16 ESD susceptibility HBM  
VESD  
kV  
according to  
EIA/JESD  
22-A 114B  
IN, SEN  
-1  
-2  
-4  
1
2
4
IS  
OUT  
1)  
2)  
R and L describe the complete circuit impedance including line, contact and generator impedances  
RI is the internal resistance of the Load Dump pulse generator  
3)  
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal  
operating range. Protection features are not designed for continuous repetitive operation.  
4)  
5)  
Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse  
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one  
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.  
Data Sheet  
9
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Block Description and Electrical Characteristics  
4
Block Description and Electrical Characteristics  
4.1  
Power Stages  
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge  
pump.  
4.1.1  
Output On-State Resistance  
The on-state resistance depends on the supply voltage as well as the junction  
temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance  
R
DS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2.  
Vbb = 13.5 V  
Tj = 25°C  
240  
220  
200  
180  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
60  
-50 -25  
0
25 50 75 100 125 150  
0
5
10  
15  
/V  
20  
25  
V
T /°C  
bb  
Figure 4  
4.1.2  
Typical On-State Resistance  
Input Circuit  
Figure 5 shows the input circuit of the BTS 5230GS. There is an integrated input resistor  
that makes external components obsolet. The current source to ground ensures that the  
device switches off in case of open input pin. The zener diode protects the input circuit  
against ESD pulses.  
RIN  
IN  
IIN  
RGND  
GND  
Input.emf  
Figure 5  
Input Circuit (IN1 and IN2)  
Data Sheet  
10  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Block Description and Electrical Characteristics  
A high signal at the input pin causes the power DMOS to switch on with a dedicated  
slope, which is optimized in terms of EMC emission.  
IN  
t
tON  
tOFF  
VOUT  
90%  
70%  
70%  
dV /dtON  
dV /dtON  
30%  
10%  
30%  
t
SwitchOn.emf  
Figure 6  
4.1.3  
Switching a Load (resistive)  
Inductive Output Clamp  
When switching off inductive loads with high-side switches, the voltage VOUT drops  
below ground potenial, because the inductance intends to continue driving the current.  
Vbb  
VBB  
IL  
VOUT  
OUT  
L,  
RL  
GND  
OutputClamp .em  
Figure 7  
Output Clamp (OUT1 and OUT2)  
To prevent destruction of the device, there is a voltage clamp mechanism implemented  
that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and  
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.  
Data Sheet  
11  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Block Description and Electrical Characteristics  
VOUT  
Vbb  
IN = 5V  
IN = 0V  
t
t
VOUT(CL)  
IL  
InductiveLoad.emf  
Figure 8  
Switching an Inductance  
Maximum Load Inductance  
While demagnization of inductive loads, energy has to be dissipated in the BTS 5230GS.  
This energy can be calculated with following equation:  
VOUT(CL)  
----------------------  
RL  
Vbb  
L
RL  
------  
E = (Vbb VOUT(CL)) ⋅  
ln 1 ---------------------- + IL ⋅  
   
VOUT(CL)  
Following equation simplifies under the assumption of RL = 0:  
Vbb  
2
1
2
--  
E = LIL 1 ----------------------  
V
OUT(CL)   
The energy, which is converted into heat, is limited by the thermal design of the  
component. See Figure 9 for the maximum allowed energy dissipation.  
Vbb = 12 V  
0.5  
0.4  
0.3  
0.2  
0.1  
0.05  
0.04  
0.03  
0.02  
0.01  
1
2
3
4
5
I /A  
L
Figure 9  
Maximum energy dissipation single pulse, Tj,Start = 150°C  
Data Sheet  
12  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Block Description and Electrical Characteristics  
4.1.4  
Electrical Characteristics  
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)  
typical values: Vbb = 13.5 V, Tj = 25 °C  
Pos. Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min. typ. max.  
General  
4.1.1 Operating voltage  
Vbb  
4.5  
28  
V
VIN = 4.5 V,  
RL = 12 ,  
V
DS < 0.5 V  
4.1.2 Operating current  
one channel active  
IGND  
mA  
µA  
VIN = 5 V  
2.0  
3.8  
4
8
two channels active  
4.1.3 Standby current for  
whole device with  
load  
Ibb(OFF)  
VIN = 0 V,  
V
SEN = 0 V,  
1.5  
2.5  
2.5  
10  
Tj = 25°C,  
Tj=85°C1)  
Tj = 150°C  
Output characteristics  
4.1.4 On-State resistance RDS(ON)  
mΩ  
mV  
A
IL = 2.5 A  
Tj = 25 °C  
Tj = 150 °C  
per channel  
140  
260  
4.1.5 Output voltage drop  
limitation at small load  
currents  
VDS(NL)  
40  
IL < 0.15 A  
4.1.6 Nominal load current IL(nom)  
per channel  
Ta = 85 °C  
Tj 150 °C 2) 3)  
one channel active  
two channels active  
1.8  
1.3  
4.1.7 Output clamp  
VOUT(CL) -16  
-13  
0.1  
-10 V  
µA  
IL = 40 mA  
VIN = 0 V  
4.1.8 Output leakage  
current per channel  
IL(OFF)  
4
1)  
4.1.9 Inverse current  
capability  
-IL(inv)  
2
A
Data Sheet  
13  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Block Description and Electrical Characteristics  
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)  
typical values: Vbb = 13.5 V, Tj = 25 °C  
Pos. Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min. typ. max.  
Thermal Resistance  
1)  
4.1.10 Junction to case  
4.1.11 Junction to ambient 2) Rthja  
Rthjc  
48 K/W  
K/W  
1) 2)  
one channel active  
all channels active  
75  
71  
Input characteristics  
4.1.12 Input resistance  
4.1.13 L-input level  
RIN  
2.0  
-0.3  
2.6  
3.5  
5.5 kΩ  
VIN(L)  
VIN(H)  
VIN  
IIN(L)  
IIN(H)  
1.0 V  
5.7 V  
V
4.1.14 H-input level  
4.1.15 Input hysteresis  
4.1.16 L-input current  
4.1.17 H-input current  
1)  
0.25  
18  
3
75 µA  
75 µA  
VIN = 0.4 V  
VIN = 5 V  
10  
38  
Timings  
4.1.18 Turn-on time to  
90% VOUT  
tON  
80  
250 µs  
RL = 12 ,  
Vbb = 13.5 V  
4.1.19 Turn-off time to  
10% VOUT  
tOFF  
100 250 µs  
RL = 12 ,  
Vbb = 13.5 V  
4.1.20 slew rate  
30% to 70% VOUT  
dV/ dtON 0.1  
0.3  
0.5 V/µs RL = 12 ,  
Vbb = 13.5 V  
4.1.21 slew rate  
70% to 30% VOUT  
0.1 0.26 0.5 V/µs RL = 12 ,  
Vbb = 13.5 V  
-dV/  
dtOFF  
1)  
Not subject to production test, specified by design  
2)  
3)  
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one  
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air  
Not subject to production test, parameters are calculated from RDS(ON) and Rth  
Note: Characteristics show the deviation of parameter at the given supply voltage and  
junction temperature. Typical values show the typical parameters expected from  
manufacturing.  
Data Sheet  
14  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
4.2  
Protection Functions  
The device is fully protected by embedded protection functions. Integrated protection  
functions are designed to prevent IC destruction under fault conditions described in the  
data sheet. Fault conditions are considered as “outside” normal operating range.  
Protection functions are neither designed for continuous nor repetitive operation.  
4.2.1  
Over Load Protection  
The load current IOUT is limited by the device itself in case of over load or short circuit to  
ground. There are three steps of current limitation which are selected automatically  
depending on the voltage VDS across the power DMOS. Please note that the voltage at  
the OUT pin is Vbb - VDS. Please refer to following figure for details.  
I
L
10  
8
6
4
2
VDS  
5
10  
15  
20  
CurrentLimitation.emf  
Figure 10  
Current Limitation (minimum values)  
Current limitation is realized by increasing the resistance of the device which leads to  
rapid temperature rise inside. A temperature sensor for each channel causes an  
overheated channel to switch off to prevent destruction. After cooling down with thermal  
hysteresis, the channel switches on again. Please refer to Figure 11 for details.  
IN  
t
IL(LIM)  
IL  
IL(SCr)  
t
IIS  
t
OverLoad.emf  
Figure 11  
Shut Down by Over Temperature  
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart,  
the current limitation level is reduced to IL(SCr). The current limitation level is reset to  
I
L(LIM) by switching off the device (VIN = 0 V).  
Data Sheet  
15  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
4.2.2  
Reverse Polarity Protection  
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional  
power is dissipated by the integrated ground resistor. Use following fomular for  
estimation of total power dissipation Pdiss(rev) in reverse polarity mode.  
2
Vbb  
Pdiss(rev)  
=
(VDS(rev) IL) + --------------  
RGND  
The reverse current through the intrinsic body diode has to be limited by the connected  
load. The current trough sense pins IS1 and IS2 has to be limited (please refer to  
maximum ratings on Page 8). The over-temperature protection is not active during  
reverse polarity.  
4.2.3  
Over Voltage Protection  
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is  
a clamp mechanism for over voltage protection. Because of the integrated ground  
resistor, over voltage protection does not require external components.  
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power  
transistor opens and the voltage across logic part is clamped. As a result, the internal  
ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin  
IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the  
connected circuitry.  
VBB  
ZDAZ  
RIN  
IN  
IS  
logic  
RSEN  
SEN  
ZDESD  
RGND  
GND  
VOUT  
OUT  
OverVoltage .emf  
Figure 12  
4.2.4  
Over Voltage Protection  
Loss of Ground Protection  
In case of complete loss of the device ground connections, but connected load ground,  
the BTS 5230GS securely changes to or keeps in off state.  
Data Sheet  
16  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
4.2.5  
Electrical Characteristics  
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)  
typical values: Vbb = 13.5 V, Tj = 25 °C  
Pos. Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min. typ. max.  
Over Load Protection  
4.2.1 Load current limitation IL(LIM)  
8
5
16  
10  
A
A
A
V
V
DS = 7 V  
DS = 14 V  
1)  
4.2.2 Repetitiveshortcircuit IL(SCr)  
3
current limitation  
Tj = Tj(SC)  
4.2.3 Initial short circuit shut tOFF(SC)  
0.5  
ms  
°C  
K
T
jStart = 25 °C 1)  
down time  
4.2.4 Thermal shut down  
temperature  
Tj(SC)  
150 170  
1)  
1)  
4.2.5 Thermal hysteresis  
Tj  
10  
Reverse Battery  
4.2.6 Drain-Source diode  
voltage (VOUT > Vbb)  
-VDS(rev)  
700 mV  
mA  
IL = -1.6 A,  
Vbb = -13.5 V,  
Tj = 150°C  
Vbb = -13.5 V 1)  
4.2.7 Reverse current  
through GND pin  
-IGND  
65  
Ground Circuit  
4.2.8 Integrated Resistor in RGND  
115 220 350 Ω  
Tj < 150°C  
Tj = 150°C  
GND line  
200  
350 Ω  
Over Voltage  
4.2.9 Overvoltage  
protection  
Vbb(AZ)  
41  
47  
53  
2
V
Ibb = 2 mA  
Loss of GND  
4.2.10 Output current while IL(GND)  
mA  
IIN = 0,1) 2)  
SEN = 0,  
IIS = 0,  
GND disconnected  
I
I
GND = 0  
1)  
Not subject to production test, specified by design  
2)  
no connection at these pins  
Data Sheet  
17  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
4.3  
Diagnosis  
For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at  
pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal  
to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see  
Table 1) occures. In case of open load in off-state, VIS(fault) is fed to the diagnosis pin.  
SOL  
VBB  
ROL  
I
IS1  
IN1  
gate control  
RIN1  
Rlim  
IS1  
OUT1  
0
1
1
0
0
1
VIS(fault)  
SEN  
µC  
VOUT(OL)  
IL(PD)  
RSEN  
channel 1  
IN2  
IS2  
gate control  
RIN2  
Rlim  
RIS1 RIS2  
I
0
1
IS2  
diagnosis  
OUT2  
channel 2  
GND  
load  
Sense.emf  
Figure 13  
Table 1  
Block Diagram: Diagnosis  
Truth Table  
Operation Mode  
Input  
Level  
Output Level  
Diagnostic Output  
SEN = H SEN = L  
Normal Operation (OFF)  
Short Circuit to GND  
Over-Temperature  
Short Circuit to Vbb  
Open Load  
L
GND  
GND  
Z
Z
(OFF-State)  
Z
Z
Z
Z
Z
Z
Vbb  
VIS = VIS(fault)  
< VOUT(OL)  
> VOUT(OL) VIS = VIS(fault)  
Z
Z
Z
Data Sheet  
18  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Table 1  
Truth Table  
Operation Mode  
Input  
Level  
Output Level  
Diagnostic Output  
SEN = H SEN = L  
Normal Operation (ON)  
Current Limitation  
Short Circuit to GND  
Over-Temperature  
Short Circuit to Vbb  
Open Load  
H
~Vbb  
< Vbb  
~GND  
Z
IIS = IL / kILIS  
Z
Z
Z
Z
Z
Z
(ON-State)  
Z
Z
Z
Vbb  
IIS < IL / kILIS  
Vbb  
Z
L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit  
4.3.1  
ON-State Diagnosis  
The standard diagnosis signal is a current sense signal proportional to the load current.  
The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to  
Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is  
recommended to use sense resistors RIS > 500 . A typical value is 4.7 kΩ  
dummy  
Tj = 150°C  
dummy  
3000  
2500  
2000  
1500  
1000  
500  
Tj = -40°C  
0
0.5  
1
1.5  
2
2.5  
IL /A  
1)  
Figure 14  
Current sense ratio kILIS  
1)  
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data  
Sheet in Section 4.3.4 (Position 4.3.6).  
Data Sheet  
19  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
In case of over-current as well as over-temperature, the current sense signal is switched  
off. As a result, one threshold is enough to distinguish between normal and faulty  
operation. Open load and over-load can be differentiated by switching off the channel  
and using open-load detection in off-state.  
Details about timings between the diagnosis signal IIS and the output voltgage VOUT and  
the load current IL in ON-state can be found in Figure 15.  
IN  
OFF  
ON  
t
t
tON  
VOUT  
IL  
t
tsIS(ON)  
tsIS( LC)  
IIS  
t
SwitchOn.emf  
Figure 15  
4.3.2  
Timing of Diagnosis Signal in ON-state  
OFF-State Diagnosis  
Details about timings between the diagnosis signal IIS and the output voltgage VOUT and  
the load current IL in OFF-state can be found in Figure 16.  
IN  
ON  
OFF  
t
t
VOUT  
pull-up resistor  
inactive  
Open Load, pull-up resistor active  
td(fault)  
t
s(fault)  
IIS  
V
IS(fault)/ RS  
t
SwitchOff.emf  
Figure 16  
Timing of Diagnosis Signal in OFF-state  
For open load diagnosis in off state an external output pull-up resistor (ROL) is  
recommended. For calculation of the pull-up resistor, just the external leakage current  
I
leakage and the open load threshold voltage VOUT(OL) has to be taken into account.  
Data Sheet  
20  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
V
bb(min) VOUT(OL,max)  
ROL = -----------------------------------------------------------  
Ileakage  
Ileakage defines the leakage current in the complete system e.g. caused by humidity.  
There is no internal leakage current from out to ground at BTS 5230GS. Vbb(min) is the  
minimum supply voltage at which the open load diagnosis in off state must be ensured.  
To reduce the stand-by current of the system, an open load resistor switch (SOL) is  
recommended.  
4.3.3  
Sense Enable Function  
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).  
See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS.  
Please note that the diagnosis is enabled, when no signal is provided at pin SEN.  
SEN  
t
tsIS(SEN)  
t
tsIS(SEN)  
tdIS(SEN)  
dIS(SEN)  
IIS  
t
SEN.emf  
Figure 17  
Timing of Sense Enable Signal  
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details.  
The resistors Rlim are recommended to limit the current through the sense pins IS1 and  
IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on  
Page 8.  
The stand-by current of the BTS 5230GS is minimized, when both input pins (IN1 and  
IN2) and the sense enable pin (SEN) are on low level.  
Data Sheet  
21  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
4.3.4  
Electrical Characteristics  
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)  
typical values: Vbb = 13.5 V, Tj = 25 °C  
Pos. Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min. typ. max.  
Open Load at OFF state  
4.3.1 Open load detection VOUT(OL) 2.0  
3.2  
5.0  
4.4 V  
6.5 V  
threshold voltage  
4.3.2 Sense signal in case VIS(fault) 3.5  
VIN = 0 V  
VOUT = 12 V  
of open load  
IIS = 1 mA  
4.3.3 Sense signal current IIS(LIM)  
4
mA  
VIS = 0 V  
VIN = 0 V  
limitation  
V
OUT = 12 V  
VIN = 5 V to 0 V  
OUT = 12 V  
4.3.4 Sense signal invalid td(fault)  
after negative input  
slope  
1.2 ms  
200 µs  
V
4.3.5 Fault signal settling  
time  
ts(fault)  
VIN = 0 V  
V
OUT = 0 V to  
> VOUT(OL)  
IIS = 1 mA  
Load Current Sense  
4.3.6 Current sense ratio  
kILIS  
VIN = 5 V  
500 1800 3100  
1210 1490 1830  
1210 1416 1645  
1210 1410 1600  
1220 1405 1590  
Tj = -40 °C  
IL = 0.04 A  
IL = 0.34 A  
IL = 0.6 A  
IL = 1.0 A  
IL = 2.6 A  
IL = 0.04 A  
IL = 0.34 A  
IL = 0.6 A  
IL = 1.0 A  
IL = 2.6 A  
900 1650 2400  
1210 1490 1830  
1210 1416 1645  
1210 1410 1600  
1220 1405 1590  
Tj = 150 °C  
4.3.7 Currentsense voltage VIS(LIM)  
5.0  
5.9  
7.5 V  
IIS = 0.5 mA  
IL = 2.6 A  
limitation  
4.3.8 Current sense  
leakage/offset current  
IIS(LH)  
5
µA  
VIN = 5 V  
IL = 0 A  
Data Sheet  
22  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)  
typical values: Vbb = 13.5 V, Tj = 25 °C  
Pos. Parameter  
Symbol  
Limit Values  
min. typ. max.  
2
Unit Test Conditions  
4.3.9 Current sense  
leakage, while  
IIS(dis)  
µA  
VSEN = 0 V  
IL = 2.6 A  
diagnosis disabled  
4.3.10 Current sense settling tsIS(ON)  
time to IIS static 10%  
after positive input  
300 µs  
50 µs  
VIN = 0 V to 5 V  
IL = 1.6 A  
1)  
slope  
4.3.11 Current sense settling tsIS(LC)  
time to IIS static 10%  
after change of load  
current  
VIN = 5 V  
IL = 0.6 A to 1  
1)  
Sense Enable  
4.3.12 Input resistance  
4.3.13 L-input level  
4.3.14 H-input level  
4.3.15 L-input current  
4.3.16 H-input current  
RSEN  
2.0  
3.5  
5.5 kΩ  
1.0 V  
5.7 V  
75 µA  
75 µA  
25 µs  
VSEN(L) -0.3  
VSEN(H) 2.6  
ISEN(L)  
ISEN(H)  
3
18  
38  
3
V
V
V
SEN = 0.4 V  
SEN = 5 V  
10  
4.3.17 Current sense settling tsIS(SEN)  
time after positive  
SEN = 0 V to 5 V  
VIN = 0 V  
SEN slope  
V
OUT > VOUT(OL)  
4.3.18 Current sense  
deactivation time after  
negative SEN slope  
tdIS(SEN)  
25 µs  
V
SEN = 5 V to 0 V  
IL = 2 A  
RS = 5 k1)  
1)  
Not subject to production test, specified by design  
Data Sheet  
23  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Package Outlines BTS 5230GS  
5
Package Outlines BTS 5230GS  
P-DSO-14-18  
(Plastic Dual Small Outline Package)  
You can find all of our packages, sorts of packing and others in our  
Infineon Internet Page “Products”: http://www.infineon.com/products.  
Dimensions in mm  
V2.0, 2005-06-13  
SMD = Surface Mounted Device  
Data Sheet  
24  
Smart High-Side Power Switch  
BTS 5230GS  
Revision History  
6
Revision History  
Version Date  
Changes  
V2.0  
05-06-08 initial version  
Data Sheet  
25  
2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Revision History  
Data Sheet  
26  
V2.0, 2005-06-13  
Smart High-Side Power Switch  
BTS 5230GS  
Edition 2005-06-13  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
D-81541 München, Germany  
© Infineon Technologies AG 6/13/05.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding  
circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
Data Sheet  
27  
2005-06-13  
h t t p : / / w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  
配单直通车
BTS5230GS产品参数
型号:BTS5230GS
生命周期:Obsolete
零件包装代码:SOIC
包装说明:SOP, SOP14,.25
针数:14
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8542.39.00.01
风险等级:5.82
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
驱动器位数:2
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G14
长度:8.75 mm
功能数量:2
端子数量:14
输出电流流向:SOURCE
标称输出峰值电流:8 A
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装等效代码:SOP14,.25
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
电源:9/16 V
认证状态:Not Qualified
座面最大高度:1.73 mm
子类别:Peripheral Drivers
最大供电电压:28 V
最小供电电压:4.5 V
标称供电电压:13.5 V
表面贴装:YES
技术:MOS
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
断开时间:250 µs
接通时间:250 µs
宽度:4 mm
Base Number Matches:1
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