BTS660P现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

®

PROFET Data Sheet BTS660P

Smart Highside High Current Power Switch

Product Summary

Overvoltage protection

Output clamp

Operating voltage

On-state resistance

Load current (ISO)

Reversave

Reverse battery protection by self turn on of

power MOSFET

•

V_bb(AZ)

V_ON(CL)

70

V

62

5.0...58

Features

V

bb(on)

•

Overload protection

Current limitation

Short circuit protection

Over temperature protection

Over voltage protection (including load dump)

Clamp of negative voltage at output

Fast deenergizing of inductive loads

Low ohmic inverse current operation

Diagnostic feedback with load current sense

Open load detection via current sense

R

ON

9

44

mΩ

A

I

L(ISO)

L(SC)

Short circuit current limitation I

Current sense ratio

90

13 000

A

I : I

L

IS

1

)

TO 220-7SMD

2

Loss of V_bbprotection ⁾

Electrostatic discharge (ESD) protection

7

Application

Power switch with current sense diagnostic

1

•

1

SMD

Standard

feedback for up to 48V DC grounded loads

•

Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and

inductive loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

4 & Tab

+ V

bb

R

bb

Voltage

source

Current

limit

Gate

protection

Overvoltage

protection

1,2,6,7

OUT

Limit for

Voltage

sensor

Charge pump

Level shifter

Rectifier

unclamped

ind. loads

I_L

Current

Sense

Output

Voltage

detection

3

Load

IN

Logic

ESD

I_IN

Temperature

sensor

I_IS

PROFET

IS

Load GND

5

V_IN

R

V_IS

IS

Logic GND

1

2

)

With additional external diode.

Additional external diode required for energized inductive loads (see page 9).

Infineon Technologies AG

Page 1

2003-Oct-01

Data Sheet BTS660P

Symbol

Function

Output to the load. The pins 1,2,6 and 7 must be shorted with each other

1

2

OUT

O

especially in high current applications! ³

)

OUT

IN

Output to the load. The pins 1,2,6 and 7 must be shorted with each other

especially in high current applications! ³⁾

3

4

I

Input, activates the power switch in case of short to ground

Positive power supply voltage, the tab is electrically connected to this pin.

V

bb

+

In high current applications the tab should be used for the V connection

bb

4

)

instead of this pin

.

Diagnostic feedback providing a sense current proportional to the load

current; zero current on failure (see Truth Table on page 7)

5

6

7

IS

S

O

Output to the load. The pins 1,2,6 and 7 must be shorted with each other

especially in high current applications! ³⁾

OUT

Output to the load. The pins 1,2,6 and 7 must be shorted with each other

especially in high current applications! ³⁾

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

V

Supply voltage (over voltage protection see page 4)

V_bb

62

58

Supply voltage for full short circuit protection,

(E_ASlimitation see diagram on page 10)

V

T_j,start=-40 ...+150°C:

Load current (short circuit current, see page 5)

Load dump protection V_LoadDump=U_A+V_s, U_A=13.5V

R_I=2Ω, R_L=0.23Ω, t_d=200ms,

I_L

self-limited

80

A

V

5

6

)

V_{Load dump}

IN, IS= open or grounded

Operating temperature range

Storage temperature range

Power dissipation (DC), T_C≤ 25 °C

T_j

T_stg

P_tot

-40 ...+150

-55 ...+150

°C

W

170

Inductive load switch-off energy dissipation, single pulse

V_bb=12V, T_j,start=150°C, T_C=150°C const.,

I_L= 20 A, Z_L= 6mH, 0Ω, see diagrams on page 10

1.2

4.0

J

E_AS

Electrostatic discharge capability (ESD)

Human Body Model acc. MIL-STD883D, method 3015.7 and ESD

assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ

V_ESD

kV

Current through input pin (DC)

Current through current sense status pin (DC)

see internal circuit diagrams on page 7 and 8

I_IN

I_IS

+15, -250

mA

3

)

Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current

capability and decrease the current sense accuracy

Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the R_ONif the pin is used instead of

the tab.

R_I= internal resistance of the load dump test pulse generator.

V_{Load dump}is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

4

)

5

6

)

Infineon Technologies AG

Page 2

2003-Oct-01

Data Sheet BTS660P

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

--

typ

-- 0.75

60

max

7

)

R_thJC

K/W

Thermal resistance

chip - case:

--

junction - ambient (free air): R_thJA

SMD version, device on PCB :

--

8

)

33

--

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150°C, V = 24 V unless otherwise specified

bb

min

--

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,2,6,7, see

measurement circuit page 7)

I_L=20A, T =25°C:

j

R_ON

7.2

14.6

--

9

17

22

--

mΩ

V_IN=0, I_L=20A, T =150°C:

j

I_L=80A, T =150°C:

j

V_bb=6V, I_L=20A, T =150°C: R_ON(Static)

17

j

Nominal load current ⁹(Tab to pins 1,2,6,7)

I_L(ISO)

38

44

A

)

ISO 10483-1/6.7: V_ON=0.5V, T =85°C ¹⁰

)

c

Nominal load current ⁹⁾, device on PCB ⁸⁾

T_A= 85 °C, T_j≤ 150 °C V_ON≤ 0.5 V,

I_L(NOM)

9.9 11.1

--

Maximum load current in resistive range

(Tab to pins 1,2,6,7)

V_ON=1.8V, T =25°C: I_L(Max)

--

c

185

105

50

30

A

see diagram on page 13

V_ON=1.8V, T =150°C:

c

Turn-on time ¹¹

I

to 90% V_OUT

:

t_on

--

400

110

µs

)

IN

Turn-off time

to 10% V_OUT: t_off

R_L=1Ω , T_j=-40...+150°C

Slew rate on¹¹⁾(10 to 30% V_OUT

R_L=1Ω

Slew rate off¹¹⁾(70 to 40% V_OUT

R_L=1Ω

)

dV/dt_on

-dV/dt_off

1.0

1.1

1.5

1.9

2.2 V/µs

2.6 V/µs

)

7

)

Thermal resistance R_thCHcase to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for V

connection. PCB is vertical without blown air.

not subject to production test, specified by design

T_Jis about 105°C under these conditions.

8

)

bb

9

)

10

)

11

)

See timing diagram on page 14.

Infineon Technologies AG

Page 3

2003-Oct-01

Data Sheet BTS660P

Parameter and Conditions

Symbol

Values

typ max

Unit

at Tj = -40 ... +150°C, V = 24 V unless otherwise specified

bb

min

Inverse Load Current Operation

On-state resistance (Pins 1,2,6,7 to pin 4)

V_bIN=12 V, I_L=- 20A

T =25°C:

--

50

--

7.2

14.6

60

9

17

--

R_ON(inv)

mΩ

j

see diagram on page 10

T =150°C:

j

Nominal inverse load current (Pins 1,2,6,7 to Tab)

I_L(inv)

A

V_ON=-0.5V, T =85°C

c

Drain-source diode voltage (V > V

)

bb

-V_ON

0.6

0.7 mV

out

I

-

I = 0,

_L= 20A, Tj =+150°C

IN

Operating Parameters

Operating voltage (V_IN=0) ¹²

V_bb(on)

V_bIN(u)

5.0

1.5

--

58

V

)

¹³)¹⁴)

Under voltage shutdown

3.0

4.5

Under voltage start of charge pump

see diagram page 15

V_bIN(ucp)

3.0

68

70

4.5

--

72

6.0

--

V

Over voltage protection ¹⁵

T_j=-40°C: V_bIN(Z)

T_j=25...+150°C:

)

I_bb=15mA

Standby current

I_IN=0, V_bb=35V

T_j=-40...+25°C: I_bb(off)

T_j=150°C:

--

15

25

50

µA

12

)

If the device is turned on before a V_bb-decrease, the operating voltage range is extended down to V_bIN(u)

For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.

not subject to production test, specified by design

V_bIN= V_bb- V_INsee diagram on page 15. When V_bINincreases from less than V_bIN(u)up to V_bIN(ucp)= 5V

(typ.) the charge pump is not active and V_OUT≈V_bb-3V.

.

13

14

)

15

)

See also V_ON(CL)in circuit diagram on page 9.

Infineon Technologies AG

Page 4

2003-Oct-01

Data Sheet BTS660P

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150°C, V = 24 V unless otherwise specified

bb

min

typ

max

Protection Functions¹⁶⁾

Short circuit current limit (Tab to pins 1,2,6,7)

V_ON=24 V, time until shutdown max. 300 µs

T_c=-40°C: I_L(SC)

T_c=25°C: I_L(SC)

T_c=+150°C: I_L(SC)

--

50

90

80

180

--

A

see page 8 and 13

--

Short circuit shutdown delay after input current

17)

positive slope, V_ON> V_ON(SC)

t_d(SC)

80

62

--

350

72

µs

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL)(e.g. over voltage)

I_L= 40 mA

V_ON(CL)

65

V

Short circuit shutdown detection voltage ¹⁷

(pin 4 to pins 1,2,6,7)

)

V_ON(SC)

T_jt

--

150

--

6

--

V

°C

K

Thermal overload trip temperature

Thermal hysteresis

∆T_jt

10

Reverse Battery

Reverse battery voltage ¹⁸

)

-V_bb

--

42

V

On-state resistance (Pins 1,2,6,7 to pin 4) T =25°C:

V_bb=-12V, V_IN=0, I_L=-20A, R_IS=1kΩ T =150°C:

j

R_ON(rev)

8.8 10.5

--

mΩ

20

j

Integrated resistor in V line

T =25C: R_bb

90

120

125

135

150

Ω

bb

j

T =150°C:

j

105

¹⁶) Integrated protection functions are designed to prevent IC destruction under fault conditions described in

the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions

are not designed for continuous repetitive operation.

17

)

not subject to production test, specified by design

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load

18

)

(as it is done with all polarity symmetric loads). Note that under off-conditions (I =I =0) the power

IN IS

transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the

intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To

reduce the power dissipation at the integrated R_bbresistor an input resistor is recommended as described

on page 9.

Infineon Technologies AG

Page 5

2003-Oct-01

Data Sheet BTS660P

Parameter and Conditions

Symbol

Values

typ max

Unit

at Tj = -40 ... +150°C, V = 24 V unless otherwise specified

bb

min

Diagnostic Characteristics

Current sense ratio,

static on-condition,

k_ILIS=I_L:I_IS,

I_L=80A,T_j=-40°C:

T_j=25°C:

11 400 13 000 15 400

11 400 13 000 14 600

11 000 13 000 14 200

11 000 13 000 16 000

11 000 13 000 15 000

11 000 13 000 14 500

10 500 13 000 17 000

10 500 13 000 15 500

11 000 13 000 15 000

9 000 13 000 22 000

10 000 13 000 18 500

10 800 13 000 16 000

k_ILIS

T_j=150°C:

19

)

V_ON<1.5V ,

I_L=20A,T_j=-40°C:

T_j=25°C:

V_IS<V_OUT- 5 v,

V_bIN>4.0V

see diagram on page 12

T_j=150°C:

I_L=10A,T_j=-40°C:

T_j=25°C:

T_j=150°C:

I_L=4A,T_j=-40°C:

T_j=25°C:

T_j=150°C:

I_IN= 0, I_IS=0 (e.g. during deenergizing of inductive loads):

--

6.5

--

-- mA

Sense current saturation

I_IS,lim

Current sense leakage current

I_IN=0 I_IS(LL)

--

2

0.5

µA

I_IS(LH)

65

V_IN=0, I_L<0:

Current sense over voltage protection T_j=-40°C: V_bIS(Z)

68

70

--

72

--

V

I_bb=15mA

T_j=25...+150°C:

20

)

Current sense settling time

t_s(IS)

500

µs

Input

Input and operating current (see diagram page 13) I_IN(on)

--

0.8

--

1.5 mA

80 µA

IN grounded (V =0)

IN

Input current for turn-off ²¹

I_IN(off)

)

19

)

If V_ONis higher, the sense current is no longer proportional to the load current due to sense current

saturation, see I_IS,lim

.

20

21

)

not subject to production test, specified by design

We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than

500kΩ for turn-off. Consider that when the device is switched off (I =0) the voltage between IN and GND

IN

reaches almost V

.

bb

Infineon Technologies AG

Page 6

2003-Oct-01

Data Sheet BTS660P

Truth Table

Input

current

Output

level

Current

Sense

Remark

level

I

IS

Normal

L

H

L

H

0

=I_L/ k_ilis, up to I_IS=I_IS,lim

operation

Very high

load current

Current-

limitation

Short circuit to

GND

Over-

temperature

Short circuit to

nominal

up to V_ON=V_{ON(Fold back)}

_ISno longer proportional to I_L

H

I_{IS, lim}

0

I

V_ON> V_{ON(Fold back)}

if V_ON>V_ON(SC), shutdown will occure

L

H

L

H

L

H

L

H

L

H

0

<nominal ²²

)

V

bb

Z²³

H

0

)

Open load

Negative output

voltage clamp

Inverse load

current

L

H

0

L = "Low" Level

H = "High" Level

Over temperature reset by cooling: T < T (see diagram on page 15)

j

jt

Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)

Terms

R_ONmeasurement layout

I

bb

4

V

l ≤

bIN

V

ON

bb

5.5mm

I

L

IN

OUT

V

3

bb

1,2,6,7

PROFET

R

IN

IS

5

V

force

bb

I

Sense

contacts

V

Out Force

contacts

(both out

IS

S

IN

V

OUT

V

bIS

I

IN

D

pins parallel)

R

V

IS

Typical R

for SMD version is about 0.2 mΩ less

than straight leads due to l ≈ 2 mm

ON

Two or more devices can easily be connected in

parallel to increase load current capability.

22

23

)

Low ohmic short to V_bbmay reduce the output current I_Land can thus be detected via the sense current I_IS.

Power Transistor "OFF", potential defined by external impedance.

Infineon Technologies AG

Page 7

2003-Oct-01

Data Sheet BTS660P

Current sense status output

Input circuit (ESD protection)

V

bb

V

bb

R

bb

V

Z,IS

R

bb

ZD

V_Z,IN

IS

V

bIN

IN

I

IS

V

IS

I_IN

R

IS

V_Z,IS= 74V (typ.), R =1 kΩ nominal (or 1 kΩ /n, if n

IS

devices are connected in parallel). I_S= I_L/k_iliscan be

driven only by the internal circuit as long as V_out- V_IS

V

IN

>

5 V. If you want measure load currents up to I_L(M), R_IS

_bb- 5 V

When the device is switched off (I =0) the voltage

IN

V

between IN and GND reaches almost V . Use a

bb

should be less than

.

I_L(M)/ K_ilis

bipolar or MOS transistor with appropriate breakdown

voltage as driver.

Note: For large values of R the voltage V_IScan reach

IS

almost V . See also over voltage protection.

bb

V_Z,IN= 74V (typ).

If you don't use the current sense output in your

application, you can leave it open.

Short circuit detection

Fault Condition: V_ON> V_ON(SC)(6V typ.) and t> t_d(SC)

(80 ...300 µs).

Inductive and over voltage output clamp

+ V_bb

V_Z1

+ V

bb

V

ON

V

ON

OUT

PROFET

IS

Short circuit

detection

Logic

unit

V

OUT

V_ONis clamped to V_ON(Cl)=62V typ

Infineon Technologies AG

Page 8

2003-Oct-01

Data Sheet BTS660P

disconnect with energized inductive

Over voltage protection of logic part

V

bb

load

+ V_bb

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (V_ZL<70 V or

R_bb

V_Z,IN

V_Z,IS

V

_Zb<42 V if R_IN=0). For higher clamp voltages

R_IN

currents at IN and IS have to be limited to 250 mA.

IN

Logic

Version a:

V_OUT

PROFET

IS

V

bb

V

bb

V_Z,VIS

R_IS

R_V

OUT

IN

PROFET

Signal GND

R

=120Ω typ., V_Z,IN= V_Z,IS= 74V typ., R_IS=1kΩ

bb

IS

nominal. Note that when over voltage exceeds 79V

typ. a voltage above 5V can occur between IS and

GND, if R_V, V_Z,VISare not used.

V

ZL

Reverse battery protection

Version b:

V

-

bb

R_bb

V

bb

V

bb

IN

OUT

IN

PROFET

Power

Transistor

R_IN

Logic

IS

D_S

V

R_L

Zb

R_V

R_IS

D

Signal GND

Power GND

Note that there is no reverse battery protection when

using a diode without additional Z-diode V_ZL, V_Zb.

R_V≥1kΩ, R_IS=1kΩ nominal. Add R_INfor reverse

battery protection in applications with V above

Version c: Sometimes a necessary voltage clamp is

given by non inductive loads R_Lconnected to the

same switch and eliminates the need of clamping

circuit:

bb

16V¹⁸⁾

;

1

0.1A

recommended value:

1

+

=

if D_S

R_INR_ISR_V|V_bb| - 12V

0.1A

is not used (or

=

if D_Sis used).

R_IN|V_bb| - 12V

V

bb

To minimize power dissipation at reverse battery

R

L

operation, the overall current into the IN and IS pin

should be about 120mA. The current can be provided

by using a small signal diode D in parallel to the input

switch, by using a MOSFET input switch or by proper

adjusting the current through R_ISand R_V.

OUT

IN

PROFET

IS

Infineon Technologies AG

Page 9

2003-Oct-01

Data Sheet BTS660P

Maximum allowable load inductance for

a single switch off

Inverse load current operation

L = f (I ); T

= 150°C, V = 40 V, R = 0 Ω

L

j,start

bb

L

V

bb

V

bb

- I

L

OUT

IN

V

+

-

PROFET

10000

1000

100

IS

V

+

-

OUT

I

IS

V

IN

R

IS

The device is specified for inverse load current

operation (V_OUT> V_bb> 0V). The current sense

feature is not available during this kind of operation (I_IS

= 0). With I_IN= 0 (e.g. input open) only the intrinsic

drain source diode is conducting resulting in consi-

derably increased power dissipation. If the device is

switched on (V_IN= 0), this power dissipation is

decreased to the much lower value R_ON(INV)* I²

(specifications see page 4).

10

Note: Temperature protection during inverse load

current operation is not possible!

1

10

100

1000

Inductive load switch-off energy

dissipation

L [µH]

I [A]

E

bb

E

AS

Externally adjustable current limit

E

Load

L

V

If the device is conducting, the sense current can be

used to reduce the short circuit current and allow

higher lead inductance (see diagram above). The

device will be turned off, if the threshold voltage of T2

is reached by I_S*R_IS. After a delay time defined by

R_V*C_VT1 will be reset. The device is turned on again,

the short circuit current is defined by I_L(SC)and the

device is shut down after t_d(SC)with latch function.

bb

i (t)

L

V

bb

OUT

PROFET

IN

L

IS

{

Z

L

I

E

R

IN

R

L

IS

V

bb

Energy stored in load inductance:

V

bb

E = ^1/·L·I²

L

2

L

IN

OUT

IS

PROFET

While demagnetizing load inductance, the energy

dissipated in PROFET is

R

V

E = E_bb+ E_L- E_R= V ·i (t) dt,

AS

ON(CL) L

R

load

IN

with an approximate solution for R > 0Ω:

L

T1

Signal

C

V

T2

Signal

R

IS

I ·L

L

I ·R_L

L

Power

GND

E

AS

= (V + |V_OUT(CL)|) ln (1+

)

bb

2

·R_L

|V_OUT(CL)|

Infineon Technologies AG

Page 10

2003-Oct-01

Data Sheet BTS660P

Options Overview

Type

BTS 660P

Over temperature protection with hysteresis

X

T >150 °C, latch function²⁴

)

j

T >150 °C, with auto-restart on cooling

j

Short circuit to GND protection

switches off when V_ON>6 V typ.

(when first turned on after approx. 180 µs)

X

-

Over voltage shutdown

Output negative voltage transient limit

to V - V

X

bb

ON(CL)

X²⁵

)

to V

= -15 V typ

OUT

24

)

Latch except when V_bb-V_OUT< V_ON(SC)after shutdown. In most cases V_OUT= 0 V after shutdown (V_OUT

0 V only if forced externally). So the device remains latched unless V_bb< V_ON(SC)(see page 5). No latch

between turn on and t_d(SC)

≠

.

25

)

Can be "switched off" by using a diode D_S(see page 8) or leaving open the current sense output.

Infineon Technologies AG

Page 11

2003-Oct-01

Data Sheet BTS660P

Characteristics

Current sense versus load current:

Current sense ratio:

I

_IS= f(I_L), T = -40 ... +150 °C

K

_ILIS= f(I_L), T = 25°C

J

j

I_IS[mA]

20000

18000

16000

14000

12000

10000

7

6

5

max

4

typ

3

2

1

0

min

8000

0

20

40

60

80

20

40

60

80

I_L[A] k

ilis

I_L[A]

Current sense ratio:

K

_ILIS= f(I_L), T = -40°C

Current sense ratio:

j

k

K

_ILIS= f(I_L), T = 150°C

ilis

j

k

ilis

24000

22000

20000

18000

16000

14000

12000

10000

8000

20000

18000

16000

14000

12000

10000

max

typ

min

0

20

40

60

80

0

20

40

60

80

I_L[A]

Infineon Technologies AG

Page 12

2003-Oct-01

Data Sheet BTS660P

Typ. current limitation characteristic

Typ. input current

I = f (V , T )

I

= f (V_bIN), V_{bIN =}V_bb- V_IN

[mA]

ON

L

j

IN

I

IN

I_L[A]

400

1.6

350

300

250

200

150

100

50

1.4

1.2

1.0

V_ON>V_ON(SC)only for t < t _d(SC)

(otherwise immediate shutdown)

0.8

0.6

0.4

0.2

0

25°C

150°C

T _j

= -40°C

0

20

40

60

80

[V]

0

5

10

15

20

V_ON(FB)(Fold Back)

V

bIN

V

ON

[V]

In case of V_ON> V_ON(SC)(typ. 6 V) the device will be

switched off by internal short circuit detection.

Typ. on-state resistance

R

ON

= f (V , T ); I = 20 A;

V

IN

= 0

bb

j

L

R_ON[mOhm]

18

static

dynamic

16

14

12

10

8

T_j= 150°C

85°C

25°C

-40°C

6

4

0

40

V_bb[V]

5

10

15

Infineon Technologies AG

Page 13

2003-Oct-01

Data Sheet BTS660P

Timing diagrams

Figure 2c: Switching an inductive load:

Figure 1a: Switching a resistive load,

change of load current in on-condition:

I_IN

V_OUT

90%

dV/dtoff

V_OUT

t

on

dV/dton

10%

t

off

t

I_L

slc(IS)

Load 1

Load 2

t

I_IS

t

I_IS

t

son(IS)

t

soff(IS)

The sense signal is not valid during a settling time

after turn-on/off and after change of load current.

Figure 3d: Short circuit:

shut down by short circuit detection, reset by I =0.

IN

Figure 2b: Switching motors and lamps:

I_IN

I_L

I_L(SCp)

V_OUT

t_d(SC)

I_IL

I

IS

V_OUT>>0

V_OUT=0

t

I_IS

t

Shut down remains latched until next reset via input.

Sense current saturation can occur at very high

inrush currents (see I_IS,limon page 6).

Infineon Technologies AG

Page 14

2003-Oct-01

Data Sheet BTS660P

Figure 4e: Overtemperature

Reset if T_j<T_jt

I_IN

I_IS

Auto Restart

V_OUT

T_j

t

Figure 6f: Undervoltage restart of charge pump,

overvoltage clamp

V_OUT

V = 0

IN

V

ON(CL)

dynamic, short

Undervoltage

not below

6

V

bIN(u)

4

I = 0

2

0

IN

V

ON(CL)

V

bIN(ucp)

0

4

bIN(u)

Infineon Technologies AG

Page 15

2003-Oct-01

Data Sheet BTS660P

Published by

Package and Ordering Code

Infineon Technologies AG,

St.-Martin-Strasse 53,

All dimensions in mm

D-81669 München

TO-220-7-3

Ordering code

Q67060-S6309

BTS660P

Attention please!

The information herein is given to describe certain

components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not

limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and

conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon

Technologies Representatives worldwide (see address list).

Warnings

TO 220-7SMD, Opt. E3180 Ordering code

Due to technical requirements components may contain

dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies

Office.

BTS660P E3180A T&R:

Q67060-S6310

Infineon Technologies Components may only be used in life-

support devices or systems with the express written approval

of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-

support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices

or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the

health of the user or other persons may be endangered.

Footprint:

10.8

9.4

4.6

16.15

0.47

0.8

8.42

Infineon Technologies AG

Page 16

2003-Oct-01

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