BTS707芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BTS707的概述

芯片BTS707的概述 BTS707是一款广泛应用于汽车和工业自动化领域的智能开关芯片。其设计主要用于控制电流和电压，能够在高负载的情况下保持良好的性能。BTS707的主要特点包括高效的静态开关损耗、快速的开关速度以及内置的保护功能。这使得BTS707在众多低功耗和高效率的应用场景中成为了一个理想的选择。该芯片采用了半导体技术，能够有效地驱动负载，比如电机、灯光和其他阻抗负载。BTS707具有较好的电流承载能力，通常在20A到30A之间，适用于需要高电流的应用。同时，这款芯片可以在多种条件下工作，包括高温和高湿环境，使其在汽车行业的应用中尤为重要。芯片BTS707的详细参数 BTS707的参数规格表中包含了一系列关键信息，以下为主要参数： - 工作电压：6V至40V； - 额定驱动电流：高达30A； - 开关损耗：通常低于100mW； - 工作温度范围：-40°C至+150°C； ...

产品型号BTS707的Datasheet PDF文件预览

PROFET BTS 707

Smart Two Channel Highside Power Switch

Product Summary

Overvoltage Protection

Operating voltage

active channels:

On-state resistance R_ON

Nominal load current I_L(NOM)

Features

•

Overload protection

V_bb(AZ)

5.8 ... 58

two parallel

125

•

Current limitation

bb(on)

one

Short-circuit protection

Thermal shutdown

Overvoltage protection

Fast demagnetization of inductive loads

Reverse battery protection

250

1.9

Ω

2.8

)

•

Open drain diagnostic output

• Open load detection in OFF-state

•

CMOS compatible input

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

Most suitable for inductive loads

Replaces electromechanical relays, fuses and discrete circuits

•

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection

functions.

Pin Definitions and Functions

Symbol Function

V Positive power supply voltage. Design the

Pin configuration (top view)

1,10,

11,12,

15,16,

19,20

wiring for the simultaneous max. short circuit

currents from channel 1 to 2 and also for low

thermal resistance

¹•

20 V

19 V

18 OUT1

17 OUT1

16 V

15 V

14 OUT2

13 OUT2

12 V

GND1 2

IN1 3

ST1 4

N.C. 5

GND2 6

IN2 7

IN1

IN2

Input 1,2, activates channel 1,2 in case of

logic high signal

17,18

13,14

OUT1

OUT2

Output 1,2, protected high-side power output

of channel 1,2. Design the wiring for the max.

short circuit current

ST1

ST2

Diagnostic feedback 1,2 of channel 1,2,

open drain, low in on state on failure or high in

off state on failure

ST2 8

N.C. 9

11 V

5,9

GND1

GND2

N.C.

Ground 1 of chip 1 (channel 1)

Ground 2 of chip 2 (channel 2)

Not Connected

With external current limit (e.g. resistor R =150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group

08.96

BTS 707

Block diagram

+ V

Le a d fra m e

Vo lta g e

so urc e

V_Logic

G a te

Ove rvo lta g e

p ro te c tio n

Curre nt

lim it

p ro te c tio n

OUT1

17,18

Lim it fo r

unc la m p e d

ind . lo a d s

Cha rg e p um p

Vo lta g e

se nso r

Le ve l shifte r

Te m p e ra ture

se nso r

Re c tifie r

IN1

Op e n lo a d

d e te c tio n

Load

Lo g ic

ESD

4 ^ST1

Sho rt c irc uit

d e te c tio n

GND1

Chip 1

Signal-

GND

Load GND

Chip 1

+ V

Le a d fra m e

OUT2

13,14

Lo g ic a nd p ro te c tio n c irc uit o f c hip 2

(e q uiva le nt to c hip 1)

IN2

Load

8 ^ST2

GND2

Chip 2

Signal-

GND

PROFET

Load GND

Chip 2

Le a d fra m e c o nne c te d to p in 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings at _j= 25°C unless otherwise specified

Parameter

Symbol

Values

Unit

V_bb

Supply voltage (overvoltage protection see page 4)

Supply voltage for full short circuit protection

_j,start=-40 ...+150°C

I_L

Load current (Short-circuit current, see page 5)

Operating temperature range

Storage temperature range

self-limited

-40 ...+150

-55 ...+150

T_j

T_stg

°C

Semiconductor Group

BTS 707

Maximum Ratings at T_j= 25°C unless otherwise specified

Parameter

Symbol

Values

Unit

Power dissipation (DC)²⁾

(all channels active)

T_a= 25°C: P_tot

T_a= 85°C:

IN, ST:

1.6

Electrostatic discharge capability (ESD)

(Human Body Model)

V_ESD

1.0

all other pins:

tbd (>1.0)

-0.5 ... +36

±2.0

Input voltage (DC)

V_IN

I_IN

I_ST

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagram page 7

±5.0

Thermal Characteristics

Parameter and Conditions

Symbol

Values

typ

Unit

min

max

Thermal resistance

junction - soldering point^2),3)

junction - ambient²⁾

each channel: R_thjs

K/W

R_thja

one channel active:

all channels active:

Electrical Characteristics

Parameter and Conditions, each of the two channels

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (V to OUT)

mΩ

I_L= 2 A

each channel,

T_j= 25°C: R_ON

T_j= 150°C:

225

400

250

500

V_bb= 24 V

two parallel channels, T_j= 25°C:

Nominal load current one channel active: I_L(NOM)

two parallel channels active:

113

1.9

2.8

125

1.60

2.4

Device on PCB²⁾, T_a= 85°C, T_j≤ 150°C

Output current while GND disconnected or pulled

I_L(GNDhigh)

1.1 mA

up; V = 32 V, V = 0, see diagram page 8

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for V

connection. PCB is vertical without blown air. See page 12

Soldering point: upper side of solder edge of device pin 15. See page 12

Semiconductor Group

BTS 707

Parameter and Conditions, each of the two channels

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

µs

R_L= 12 Ω, V_bb= 20 V, T =-40...+150°C

Slew rate on

10 to 30% V_OUT, R_L= 12 Ω, V_bb= 20 V,

dV/dt_on

6 V/µs

7 V/µs

T =-40...+150°C:

Slew rate off

70 to 40% V_OUT, R_L= 12 Ω, V_bb= 20 V,

T =-40...+150°C:

-dV/dt_off

Operating Parameters

Operating voltage⁴⁾

T_j=-40...+150°C: V_bb(on)

T_j=-40...+150°C: V_bb(under)

T_j=-40...+150°C: V_{bb(u rst)}

5.8

2.7

Undervoltage shutdown

Undervoltage restart

4.7

4.9

7.5

Undervoltage restart of charge pump

see diagram page 11

V_bb(ucp)

5.6

T_j=-40...+150°C:

Undervoltage hysteresis

∆V_bb(under)

0.4

∆V_bb(under)= V_{bb(u rst)}- V_bb(under)

Overvoltage protection⁵⁾

T_j=-40...+150°C: V_bb(AZ)

I_bb= 40 mA

Standby current, all channels off

V_IN= 0

I_bb(off)

µA

T_j=150°C:

Operating current ⁶⁾, V_IN= 5V, _Tj=-40...+150°C

I_GND

2.2

4.4

-- mA

I_GND= I_GND1+ I_GND2

one channel on:

two channels on:

Protection Functions

Initial peak short circuit current limit, (see timing

diagrams, page 9)

each channel, _Tj=-40°C: I_L(SCp)

_Tj=25°C:

4.0

_Tj=+150°C:

two parallel channels

twice the current of one channel

Output clamp (inductive load switch off)⁷⁾

V_ON(CL)

at V_ON(CL)= V_bb- V_OUT

Thermal overload trip temperature

Thermal hysteresis

T_jt

150

°C

∆T_jt

At supply voltage increase up to V =5.6V typ without charge pump, V

≈V - 2 V

OUT

BTS707相关文章

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BTS707产品参数

型号:	BTS707
是否Rohs认证：	不符合
生命周期：	Obsolete
零件包装代码：	SOIC
包装说明：	PLASTIC, SO-20
针数：	20
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.36
Is Samacsys：	N
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数：	2
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G20
长度：	12.8 mm
湿度敏感等级：	1
功能数量：	2
端子数量：	20
输出电流流向：	SINK
最大输出电流：	1.6 A
标称输出峰值电流：	2.8 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装等效代码：	SOP20,.4
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
电源：	12/24 V
认证状态：	Not Qualified
座面最大高度：	2.65 mm
子类别：	Peripheral Drivers
最大供电电压：	58 V
最小供电电压：	5.8 V
标称供电电压：	12 V
表面贴装：	YES
技术：	MOS
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
断开时间：	70 µs
接通时间：	80 µs
宽度：	7.6 mm
Base Number Matches：	1

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