BU4525AF各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case

dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

-

1500

800

12

30

45

3.0

-

V

Collector-emitter voltage (open base)

Collector current (DC)

-

A

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

-

A

P_tot

V_CEsat

I_Csat

T_hs≤ 25 ˚C

-

W

V

I_C= 9.0 A; I_B= 2.25 A

f = 16 kHz

-

9.0

7.0

0.4

0.15

A

f = 70 kHz

-

t_f

Fall time

I_Csat= 9.0 A;f = 16 kHz

0.55

-

µs

I_Csat= 7.0 A;f = 70 kHz

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

1

DESCRIPTION

c

case

base

2

collector

emitter

b

3

case isolated

1

2

3

e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

-

1500

800

12

V

Collector-emitter voltage (open base)

Collector current (DC)

-

A

I_CM

I_B

Collector current peak value

Base current (DC)

-

30

A

-

8

A

I_BM

Base current peak value

Reverse base current peak value ¹

Total power dissipation

-

12

A

-I_BM

P_tot

T_stg

T_j

-

7

A

T_hs≤ 25 ˚C

45

W

˚C

Storage temperature

Junction temperature

-55

-

150

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

with heatsink compound

in free air

-

2.8

-

K/W

35

1 Turn-off current.

October 1998

1

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

-

22

-

pF

STATIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_CES

Collector cut-off current ²

V_BE= 0 V; V_CE= V_CESMmax

T_j= 125 ˚C

-

1.0

2.0

mA

;

I_EBO

BV_EBO

V_CEOsust

Emitter cut-off current

Emitter-base breakdown voltage

V_EB= 6.0 V; I_C= 0 A

I_B= 1 mA

-

13.5

-

100

-

µA

V

7.5

800

Collector-emitter sustaining voltage I_B= 0 A; I_C= 100 mA;

L = 25 mH

V_CEsat

V_BEsat

h_FE

Collector-emitter saturation voltage I_C= 9.0 A;I_B= 2.25A

-

0.88

-

3.0

1.06

-

V

Base-emitter saturation voltage

DC current gain

I_C= 9.0 A;I_B= 2.25A

I_C= 1.0 A; V_CE= 5 V

I_C= 9.0 A; V_CE= 5 V

0.97

12

h_FE

4.2

5.8

7.6

DYNAMIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

C_c

Collector capacitance

I_E= 0 A; V_CB= 10 V; f = 1 MHz

145

-

pF

Switching times (16 kHz line

deflection circuit)

I_Csat= 9.0 A;I_B1= 1.8 A

(I_B2= -4.5 A)

t_s

t_f

Turn-off storage time

Turn-off fall time

3.7

0.4

4.5

0.55

µs

Switching times (70 kHz line

deflection circuit)

I_Csat= 7.0 A;I_B1= 1.4 A

(I_B2= -4.5 A)

t_s

t_f

Turn-off storage time

Turn-off fall time

2

0.15

-

µs

2 Measured with half sine-wave voltage (curve tracer).

October 1998

2

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

ICsat

90 %

+ 50v

100-200R

IC

IB

10 %

Horizontal

tf

t

Oscilloscope

ts

IB1

Vertical

1R

t

100R

6V

30-60 Hz

- IB2

Fig.1. Test circuit for V_CEOsust

.

Fig.4. Switching times definitions.

IC / mA

+ 150 v nominal

adjust for ICsat

Lc

250

200

LB

T.U.T.

IBend

-VBB

100

0

Cfb

min

VCE / V

VCEOsust

Fig.2. Oscilloscope display for V_CEOsust

.

Fig.5. Switching times test circuit.

hFE

ICsat

BU4525 1V

TRANSISTOR

100

IC

IB

DIODE

Ths = 25 C

Ths = 85 C

VCE = 1V

t

IB1

10

20us

26us

64us

IB2

VCE

1

0.01

0.1

1

10

100

t

IC / A

Fig.3. Switching times waveforms (16 kHz).

Fig.6. High and low DC current gain.

October 1998

3

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

Normalised Power Derating

with heatsink compound

hFE

100

PD%

120

110

100

90

80

70

60

50

40

30

20

10

0

Ths = 25 C

VCE = 5V

Th_Bs_U=₄₅8₂₅5₅C_V

10

1

0.01

0

20

40

60

80

Ths /

100

120

140

0.1

1

10

100

C

IC / A

Fig.7. High and low DC current gain.

Fig.10. Normalised power dissipation.

PD% = 100 P_D/P_{D 25˚C}

VBEsat / V

BU4525AF

Zth K/W

BU4525AF/X/W

10

1

1.2

1.1

1

Ths = 25 C

Ths = 85 C

0.5

0.2

0.1

IC = 9 A

0.05

0.1

0.9

0.8

0.7

0.6

0.02

t

p

IC = 7 A

t

p

P

0.01

D =

D

T

t

T

0

0.001

1.0E-07

1.0E-05

1.0E-03

t / s

1.0E-01

1.0E+01

0

1

2

3

4

IB / A

Fig.8. Typical base-emitter saturation voltage.

Fig.11. Transient thermal impedance.

ts/tf / us

10

Ic(sat) (A)

10

8

ICsat = 9 A

Ths = 85 C

Freq = 16 kHz

8

ts

6

4

2

tf

0

20

40

60

80

100

IB / A

0

1

2

3

4

Frequency (kHz)

Fig.9. Typical collector storage and fall time.

I_C=9 A; T_j= 85˚C; f = 16kHz

Fig.12. I_Csatduring normal running vs. frequency of

operation for optimum performance

October 1998

4

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

MECHANICAL DATA

Dimensions in mm

15.3 max

5.2 max

Net Mass: 5.5 g

3.1

3.3

0.7

7.3

3.2

o

45

6.2

5.8

21.5

max

seating

plane

3.5 max

not tinned

3.5

15.7

min

1

2

3

1.2

1.0

0.7 max

2.0

2.1 max

M

0.4

5.45

Fig.13. SOT199; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1998

5

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

October 1998

6

Rev 1.100

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