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产品型号BUK9Y6R0-60E的概述

BUK9Y6R0-60E 芯片概述 BUK9Y6R0-60E 是一款高性能的MOSFET(绝缘栅场效应晶体管),其主要应用于电源管理、开关电路以及高效能功率转换器中。该芯片具有优异的开关特性和低导通电阻,使其在高频率和高电流应用中表现良好。这款器件的设计旨在满足现代电子设备对高能效和小体积的需求,因此在消费电子、工业控制和汽车电子等多个领域受到了广泛应用。 详细参数 根据BUK9Y6R0-60E的数据手册,其主要技术参数包括: - 最大漏极-to-源极电压 (V_DS): 60V - 最大栅极-to-源极电压 (V_GS): ±20V - 最大漏极电流 (I_D): 70A(在适当冷却条件下) - 导通电阻 (R_DS(on)): 最小值为 6.1 mΩ(在V_GS = 10V时) - 输入电容 (C_iss): 2530 pF(在V_DS = 25V时) - 输出电容 (C_oss)...

产品型号BUK9Y6R0-60E的Datasheet PDF文件预览

K
A
P
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
F
L
20 February 2013  
Product data sheet  
1. General description  
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS  
technology. This product has been designed and qualified to AEC Q101 standard for use  
in high performance automotive applications.  
2. Features and benefits  
Q101 compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C  
3. Applications  
12 V Automotive systems  
Motors, lamps and solenoid control  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 1  
-
-
-
-
-
-
[1]  
100  
195  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11  
-
-
4.6  
6
-
mΩ  
nC  
VGS = 5 V; ID = 25 A; VDS = 48 V;  
Fig. 13; Fig. 14  
11.1  
[1] Continuous current is limited by package.  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 
NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
mb  
D
S
1
S
S
S
G
D
source  
source  
source  
gate  
2
G
3
mbb076  
4
1
2 3 4  
mb  
mounting base; connected to  
drain  
LFPAK; Power-  
SO8 (SOT669)  
6. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK9Y6R0-60E  
LFPAK;  
plastic single-ended surface-mounted package; 4 leads  
SOT669  
Power-SO8  
7. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BUK9Y6R0-60E  
96E060  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
60  
Unit  
drain-source voltage  
drain-gate voltage  
gate-source voltage  
Tj ≥ 25 °C; Tj ≤ 175 °C  
RGS = 20 kΩ  
-
V
V
V
V
A
A
A
W
VDGR  
VGS  
-
60  
Tj ≤ 175 °C; DC  
-10  
10  
Tj ≤ 175 °C; Pulsed  
[1][2]  
[3]  
-15  
15  
ID  
drain current  
Tmb = 25 °C; VGS = 5 V; Fig. 1  
Tmb = 100 °C; VGS = 5 V; Fig. 1  
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4  
Tmb = 25 °C; Fig. 2  
-
-
-
-
100  
85  
IDM  
Ptot  
peak drain current  
479  
195  
total power dissipation  
BUK9Y6R0-60E  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved  
Product data sheet  
20 February 2013  
2 / 13  
 
 
 
 
NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
Symbol  
Tstg  
Parameter  
Conditions  
Min  
-55  
-55  
Max  
175  
175  
Unit  
°C  
storage temperature  
junction temperature  
Tj  
°C  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
[3]  
-
-
100  
479  
A
A
ISM  
pulsed; tp ≤ 10 µs; Tmb = 25 °C  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω;  
VGS = 5 V; Tj(init) = 25 °C; unclamped;  
Fig. 3  
[4][5]  
-
127  
mJ  
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm  
[2] Significantly longer life times are achieved by lowering Tj and or VGS  
[3] Continuous current is limited by package.  
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.  
[5] Refer to application note AN10273 for further information.  
03aa16  
003aaj185  
120  
150  
ID  
P
der  
(%)  
(A)  
100  
80  
(1)  
50  
40  
0
0
0
50  
100  
150  
Tmb ( C)  
200  
0
50  
100  
150  
200  
°
T
(°C)  
mb  
(1) Capped at 100A due to package  
Fig. 2. Normalized total power dissipation as a  
function of mounting base temperature  
Fig. 1. Continuous drain current as a function of  
mounting base temperature  
BUK9Y6R0-60E  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved  
Product data sheet  
20 February 2013  
3 / 13  
 
 
 
NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
003aaj186  
103  
IAL  
(A)  
102  
(1)  
10  
1
(2)  
(3)  
10-1  
10-3  
10-2  
10-1  
1
10  
tAL (ms)  
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time  
003aaj187  
103  
ID  
Limit RDSon = VDS / ID  
(A)  
µ
tp =10  
s
102  
µ
100  
s
10  
1 ms  
10 ms  
DC  
1
100 ms  
10-1  
10-1  
1
10  
102  
103  
VDS (V)  
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
9. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
0.77  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
Fig. 5  
-
-
K/W  
BUK9Y6R0-60E  
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BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
003aai583  
1
Zth(j-mb)  
δ
= 0.5  
(K/W)  
0.2  
0.1  
10-1  
0.05  
tp  
P
δ =  
10-2  
0.02  
T
single shot  
t
tp  
T
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
1
tp (s)  
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration  
10. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
60  
54  
1.4  
-
-
V
V
V
-
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;  
1.7  
2.1  
voltage  
Fig. 9; Fig. 10  
ID = 1 mA; VDS = VGS; Tj = -55 °C;  
Fig. 9  
-
-
-
2.45  
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;  
Fig. 9  
0.5  
IDSS  
drain leakage current  
gate leakage current  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VDS = 60 V; VGS = 0 V; Tj = 175 °C  
VGS = 10 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11  
-
-
-
-
-
-
0.07  
10  
µA  
µA  
nA  
-
500  
100  
100  
6
IGSS  
2
2
nA  
RDSon  
drain-source on-state  
resistance  
4.6  
4
mΩ  
mΩ  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 11  
5.2  
VGS = 5 V; ID = 25 A; Tj = 175 °C;  
Fig. 11; Fig. 12  
-
-
13.6  
mΩ  
Dynamic characteristics  
QG(tot) total gate charge  
QGS gate-source charge  
ID = 25 A; VDS = 48 V; VGS = 5 V;  
Fig. 13; Fig. 14  
-
-
39.4  
12.3  
-
-
nC  
nC  
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BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
Symbol  
QGD  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
gate-drain charge  
input capacitance  
output capacitance  
-
-
-
-
11.1  
-
nC  
Ciss  
VGS = 0 V; VDS = 25 V; f = 1 MHz;  
Tj = 25 °C; Fig. 15  
4739 6319 pF  
Coss  
391  
202  
469  
277  
pF  
pF  
Crss  
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 45 V; RL = 1.8 Ω; VGS = 5 V;  
RG(ext) = 5 Ω  
-
-
-
-
24  
44  
60  
37  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD source-drain voltage  
trr  
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16  
-
-
-
0.8  
26  
23  
1.2  
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;  
-
-
ns  
nC  
VDS = 25 V  
Qr  
recovered charge  
003aaj189  
003aaj190  
100  
20  
I
R
10  
4.5  
3
D
DSon  
(A)  
(m  
)
Ω
75  
15  
10  
5
2.8  
2.6  
50  
25  
0
2.4  
V
(V) = 2.2  
GS  
V
0
0
0.5  
1
1.5  
0
2.5  
5
7.5  
10  
(V)  
V
(V)  
DS  
GS  
Tj = 25 °C; tp = 300 μs  
Fig. 7. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
Fig. 6. Output characteristics; drain current as a  
function of drain-source voltage; typical values  
BUK9Y6R0-60E  
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NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
003aaj192  
003aah025  
180  
3
VGS(th)  
(V)  
I
D
(A)  
2.5  
max  
120  
2
typ  
1.5  
min  
60  
1
0.5  
°
°
T = 175  
C
T = 25  
j
C
j
0
-60  
0
0
60  
120  
180  
0
1
2
3
4
V
(V)  
T ( C)  
GS  
°
j
Fig. 8. Transfer characteristics; drain current as a  
function of gate-source voltage; typical values  
Fig. 9. Gate-source threshold voltage as a function of  
junction temperature  
003aah026  
003aaj195  
10-1  
20  
ID  
R
2.8  
2.6  
DSon  
(A)  
(m  
)
Ω
10-2  
15  
10  
5
min  
typ  
max  
10-3  
10-4  
10-5  
10-6  
3
4.5  
V
(V) = 10  
GS  
0
0
20  
40  
60  
80  
100  
0
1
2
3
I (A)  
VGS (V)  
D
Tj = 25 °C; tp = 300 μs  
Fig. 10. Sub-threshold drain current as a function of  
gate-source voltage  
Fig. 11. Drain-source on-state resistance as a function  
of drain current; typical values  
BUK9Y6R0-60E  
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Product data sheet  
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NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
003aaj816  
2.4  
V
DS  
a
I
D
1.6  
0.8  
0
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
Fig. 13. Gate charge waveform definitions  
-60  
0
60  
120  
180  
Tj °C)  
(
Fig. 12. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
003aaj197  
003aaj198  
10  
104  
V
GS  
C
(pF)  
(V)  
C
iss  
8
103  
102  
10  
6
C
C
oss  
rss  
V
= 14V  
V
= 48V  
DS  
DS  
4
2
0
10-1  
1
10  
102  
0
20  
40  
60  
80  
V
(V)  
DS  
Q
(nC)  
G
Fig. 14. Gate-source voltage as a function of gate  
charge; typical values  
Fig. 15. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
BUK9Y6R0-60E  
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Product data sheet  
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NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
003aaj199  
100  
I
S
(A)  
80  
60  
40  
20  
0
T = 175 C  
°
T = 25 C  
°
j
j
0
0.3  
0.6  
0.9  
1.2  
V
(V)  
SD  
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values  
BUK9Y6R0-60E  
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Product data sheet  
20 February 2013  
9 / 13  
 
NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
11. Package outline  
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads  
SOT669  
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting  
base  
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e  
A
(A )  
3
C
A
1
θ
L
detail X  
y
C
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
D
(1)  
D
(1)  
(1)  
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT  
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max  
1.20 0.15 1.10  
1.01 0.00 0.95  
0.50 4.41 2.2 0.9 0.25 0.30 4.10  
0.35 3.62 2.0 0.7 0.19 0.24 3.80  
5.0 3.3  
4.8 3.1  
6.2 0.85 1.3  
5.8 0.40 0.8  
1.3  
0.8  
8°  
0°  
mm  
0.25  
4.20  
1.27  
0.25 0.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
06-03-16  
11-03-25  
SOT669  
MO-235  
Fig. 17. Package outline LFPAK; Power-SO8 (SOT669)  
BUK9Y6R0-60E  
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Product data sheet  
20 February 2013  
10 / 13  
 
NXP Semiconductors  
BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
12. Legal information  
12.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — NXP Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use in automotive applications — This NXP  
Semiconductors product has been qualified for use in automotive  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nxp.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
12.2 Definitions  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
applications and products using NXP Semiconductors products, and NXP  
Semiconductors accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the NXP Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as for the planned  
application and use of customer’s third party customer(s). Customers should  
provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local NXP  
Semiconductors sales office. In case of any inconsistency or conflict with the  
short data sheet, the full data sheet shall prevail.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications  
and the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
12.3 Disclaimers  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, NXP Semiconductors does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
BUK9Y6R0-60E  
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Product data sheet  
20 February 2013  
11 / 13  
 
 
 
 
 
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BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,  
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,  
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,  
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,  
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.  
HD Radio and HD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
BUK9Y6R0-60E  
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BUK9Y6R0-60E  
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56  
13. Contents  
1
General description ............................................... 1  
Features and benefits ............................................1  
Applications ........................................................... 1  
Quick reference data ............................................. 1  
Pinning information ...............................................2  
Ordering information .............................................2  
Marking ...................................................................2  
Limiting values .......................................................2  
Thermal characteristics .........................................4  
Characteristics .......................................................5  
Package outline ................................................... 10  
2
3
4
5
6
7
8
9
10  
11  
12  
Legal information .................................................11  
Data sheet status ............................................... 11  
Definitions ...........................................................11  
Disclaimers .........................................................11  
Trademarks ........................................................ 12  
12.1  
12.2  
12.3  
12.4  
© NXP B.V. 2013. All rights reserved  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 20 February 2013  
BUK9Y6R0-60E  
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Product data sheet  
20 February 2013  
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配单直通车
BUL1101E产品参数
型号:BUL1101E
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:STMICROELECTRONICS
零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
Reach Compliance Code:compliant
风险等级:5.77
Is Samacsys:N
最大集电极电流 (IC):3 A
集电极-发射极最大电压:450 V
配置:SINGLE
最小直流电流增益 (hFE):6
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
最大功率耗散 (Abs):70 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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