BUL45供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

High Voltage SWITCHMODE Series

POWER TRANSISTOR

5.0 AMPERES

Designed for use in electronic ballast (light ballast) and in Switchmode Power

supplies up to 50 Watts. Main features include:

700 VOLTS

35 and 75 WATTS

•

Improved Efficiency Due to:

— Low Base Drive Requirements (High and Flat DC Current Gain h

— Low Power Losses (On–State and Switching Operations)

)

FE

— Fast Switching: t = 100 ns (typ) and t = 3.2 µs (typ)

fi si

— Fast Switching: @ I = 2.0 A, I = I = 0.4 A

C

B1 B2

•

Full Characterization at 125°C

Tight Parametric Distributions Consistent Lot–to–Lot

BUL45F, Case 221D, is UL Recognized at 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL45

BUL45F

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

V

CEO

400

700

9.0

BUL45

CASE 221A–06

TO–220AB

V

CES

EBO

V

Collector Current — Continuous

— Peak(1)

I

C

5.0

10

I

CM

Base Current

I

B

2.0

Adc

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

V

ISOL

—

4500

3500

1500

Volts

T

C

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

C

P

D

75

0.6

35

0.28

Watts

W/°C

Operating and Storage Temperature

T , T

J stg

– 65 to 150

°C

THERMAL CHARACTERISTICS

Rating

BUL45F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Symbol MJE18006 MJF18006

Unit

Thermal Resistance — Junction to Case

R

θJC

R

θJA

1.65

62.5

3.55

62.5

°C/W

— Junction to Ambient

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

400

—

Vdc

µAdc

C

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

I

CEO

100

CE

CEO

B

= Rated V

, V

= 0)

I

—

10

100

CE

CES EB

CES

(T = 125°C)

C

Emitter Cutoff Current (V

EB

= 9.0 Vdc, I = 0)

I

—

100

µAdc

C

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

1

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (I = 1.0 Adc, I = 0.2 Adc)

V

—

0.84

0.89

1.2

1.25

Vdc

C

B

BE(sat)

(I = 2.0 Adc, I = 0.4 Adc)

C

B

Collector–Emitter Saturation Voltage

V

CE(sat)

(I = 1.0 Adc, I = 0.2 Adc)

—

0.175

0.150

0.25

—

C

B

(T = 125°C)

C

Collector–Emitter Saturation Voltage

(I = 2.0 Adc, I = 0.4 Adc)

V

Vdc

—

CE(sat)

—

0.25

0.275

0.4

—

C

B

(T = 125°C)

C

DC Current Gain (I = 0.3 Adc, V

C

= 5.0 Vdc)

= 1.0 Vdc)

h

FE

14

—

7.0

5.0

10

—

32

14

12

22

34

—

CE

(T = 125°C)

C

DC Current Gain (I = 2.0 Adc, V

C

CE

(T = 125°C)

C

DC Current Gain (I = 10 mAdc, V

C

= 5.0 Vdc)

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

= 10 Vdc, I = 0, f = 1.0 MHz)

f

—

12

50

—

75

MHz

pF

C

CE

T

Output Capacitance (V

CB

C

E

ob

Input Capacitance (V

EB

= 8.0 Vdc)

C

920

1200

pF

ib

Dynamic Saturation Voltage:

—

1.75

4.4

—

1.0 µs

3.0 µs

1.0 µs

3.0 µs

(I = 1.0 Adc

(T = 125°C)

C

I

V

= 100 mAdc

Determined 1.0 µs and

3.0 µs respectively after

B1

—

0.5

1.0

—

= 300 V)

CC

(T = 125°C)

C

V

rising I reaches 90%

B1

CE

(Dyn sat)

Vdc

of final I

(see Figure 18)

B1

—

1.85

6.0

—

(I = 2.0 Adc

(T = 125°C)

C

I

= 400 mAdc

= 300 V)

B1

—

0.5

1.0

—

V

CC

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Resistive Load

Turn–On Time

Turn–Off Time

(I = 2.0 Adc, I = I = 0.4 Adc

Pulse Width = 20 µs,

Duty Cycle < 20%

t

—

75

120

110

—

ns

C

B1 B2

on

(T = 125°C)

C

—

2.8

3.5

—

µs

V

CC

= 300 V)

off

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

CC

= 15 Vdc, L = 200 µH, V

clamp

= 300 Vdc)

C

Fall Time

(I = 2.0 Adc, I = 0.4 Adc

t

70

—

200

170

—

ns

µs

ns

µs

ns

µs

ns

C

B1

fi

I

= 0.4 Adc)

(T = 125°C)

B2

C

Storage Time

Crossover Time

Fall Time

t

si

2.6

—

4.2

3.8

—

(T = 125°C)

C

t

c

—

230

400

350

—

(T = 125°C)

C

(I = 1.0 Adc, I = 100 mAdc

t

fi

—

110

100

150

—

C

B2

B1

I

= 0.5 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

Fall Time

t

si

—

1.1

1.5

1.7

—

(T = 125°C)

C

t

c

—

170

250

—

(T = 125°C)

C

(I = 2.0 Adc, I = 250 mAdc

t

fi

—

80

0.6

175

120

C

B2

B1

I

= 2.0 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

t

si

0.9

(T = 125°C)

C

t

c

300

(T = 125°C)

C

2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

100

V

= 1 V

V

= 5 V

CE

T

= 25°C

T

= 25°C

J

T

= 125°C

T = 125°C

J

T

= –20°C

T

= –20°C

J

10

1

0.01

1

0.01

0.10

1.00

10.00

0.10

I , COLLECTOR CURRENT (AMPS)

C

1.00

10.00

I

, COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain at @ 5 Volts

2.0

1.5

1.0

10

T

= 25°C

J

1.0

1.5

A

1 A

2A

3 A

4 A 5 A

6 A

I

/I = 10

C B

0.1

0.5

0

T

= 25°C

= 125°C

J

I

/I = 5

C B

I

= 0.5 A

C

0.01

0.10

1.00

10.00

0.01

0.10

I , COLLECTOR CURRENT (AMPS)

C

1.00

10.00

I

, BASE CURRENT (AMPS)

B

Figure 3. Collector–Emitter Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

1.1

10000

1000

T

= 25°C

J

1.0

0.9

f = 1 MHz

C

ib

0.8

0.7

C

ob

100

10

1

T

J

= 25°C

J

0.6

0.5

0.4

T

= 125°C

I

/I = 10

C B

I

/I = 5

C B

0.01

0.10

1.00

10.00

1

10

100

1000

I

, COLLECTOR CURRENT (AMPS)

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

C

CE

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

3

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

1200

1000

800

3000

2500

2000

I

V

= I /2

C

B(off)

CC

T

= 25

= 125

°

C

I

V

= I /2

= 300 V

J

B(off) C

CC

T

= 25°C

= 125°C

= 300 V

J

°C

I

/I = 5

C B

PW = 20 µs

I

/I = 10

C B

I

/I = 10

C B

600

1500

1000

400

200

0

500

0

I

/I = 5

C B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

I , COLLECTOR CURRENT (AMPS)

C

6

7

8

I

, COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t

Figure 8. Resistive Switching, t

off

on

3500

3000

2500

2000

1500

1000

3500

3000

2500

2000

1500

1000

500

I

L

V

= I /2

B(off)

= 200

C

T

= 25°C

= 125°C

V

= 300 V

= 15 V

J

Z

µH

C

V

I

L

CC

B(off)

= 300 V

= 15 V

Z

CC

= I /2

I

/I = 5

C

C B

= 200 µH

C

I

= 1 A

C

T

= 25°C

= 125°C

J

500

0

I

= 2 A

7

I

/I = 10

C

C B

0

1

2

3

4

5

3

4

5

6

8

9

10

11 12

13

14 15

I

, COLLECTOR CURRENT (AMPS)

h

, FORCED GAIN

C

FE

Figure 9. Inductive Storage Time, t

Figure 10. Inductive Storage Time, t (h

si FE

)

si

300

250

200

150

100

200

150

100

t

c

I = I /2

B(off) C

V

I

= 15 V

= I /2

CC

B(off)

50

0

V

L

= 15 V

CC

t

C

fi

50

0

t

= 300 V

fi

T

= 25

= 125

°

C

T

= 25

= 125°C

°

C

L

V

= 200

µH

Z

J

C

= 200

µ

H

°C

= 300 V

C

Z

0

1

2

3

4

5

0

1

2

3

4

5

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching, t & t , I /I = 5

fi C B

Figure 12. Inductive Switching, t & t , I /I = 10

fi C B

c

4

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

150

140

130

120

110

100

90

300

V

I

= 15 V

CC

Z

I

= I /2

C

CC

= 300 V

T

= 25°C

B(off)

J

= 300 V

= I /2

V

L

= 15 V

= 125°C

250

200

150

B(off)

C

Z

C

L

= 200 µH

C

= 200 µH

I

= 1 A

I

= 1 A

C

100

50

I

= 2 A

6

T

= 25°C

80

C

J

I

= 2 A

9

C

= 125°C

70

3

4

5

7

8

9

10

11

12

13

14

15

3

4

5

6

7

8

10 11

12

13

14 15

h

, FORCED GAIN

h

, FORCED GAIN

FE

Figure 13. Inductive Fall Time, t (h

fi FE

)

Figure 14. Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

6

100

10

T

≤ 125°C

/I ≥ 4

= 500 µH

DC (BUL45)

5 ms

C

I

L

5

C B

1 ms

50

µs

10

µs

1 µs

C

4

3

2

EXTENDED

SOA

1.0

DC (BUL45F)

0.1

–5 V

1

0

V

= 0 V

–1.5 V

BE(off)

400

V , COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

0.01

10

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

300

500

600

700

800

V

CE

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1.0

down. Safe operating area curves indicate I – V

limits of

C

CE

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

SECOND BREAKDOWN

DERATING

0.8

0.6

0.4

than the curves indicate. The data of Figure 15 is based on T

C

= 25°C; T

is variable depending on power level. Second

J(pk)

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when T ≥ 25°C. Second breakdown limita-

C

tions do not derate the same as thermal limitations. Allowable

current at the voltages shown in Figure 15 may be found at

any case temperature by using the appropriate curve on Fig-

THERMAL DERATING

ure 17. T

may be calculated from the data in Figures 20

J(pk)

0.2

0

and 21. At any case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction re-

verse–biased. The safe level is specified as a reverse–biased

safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode.

20

40

60

80

100

120

C)

140

160

T

, CASE TEMPERATURE (

°

C

Figure 17. Forward Bias Power Derating

5

Motorola Bipolar Power Transistor Device Data

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

C

t

fi

3

dyn 1 µs

t

si

2

dyn 3 µs

1

t

10% I

C

c

V

I

10% V

0

CLAMP

–1

–2

–3

–4

–5

4

90% I

B

90% I

B

1

B

3

2

1

0

1 µs

3 µs

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I

PEAK

C

100 µF

1

µ

F

MTP8P10

MUR105

MJE210

100

3 W

Ω

150

3 W

Ω

V

PEAK

CE

V

CE

MTP8P10

MPF930

R

B1

I

1

B

I

MPF930

+10 V

out

I

B

A

I

2

B

50

Ω

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

RBSOA

L = 500

COMMON

MTP12N10

150

Ω

L = 200

µH

3 W

RB2 =

∞

RB2 = 0

500 µF

V

= 20 VOLTS

V

= 15 VOLTS

V

= 15 VOLTS

CC

(pk) = 100 mA

CC

RB1 SELECTED FOR

DESIRED I

CC

RB1 SELECTED

FOR DESIRED I

I

C

1 µF

1

B

–V

off

Table 1. Inductive Load Switching Drive Circuit

6

Motorola Bipolar Power Transistor Device Data

TYPICAL THERMAL RESPONSE

1.00

D = 0.5

0.2

0.1

R

(t) = r(t) R

θ

JC

°C/W MAX

0.10

0.01

P

(pk)

= 2.5

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

0.05

0.02

t

1

2

1

(t)

T

– T = P R

SINGLE PULSE

J(pk)

C

(pk) θJC

DUTY CYCLE, D = t /t

1 2

0.01

0.10

1.00

10.00

100.00

1000.00

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

θJC

(t)) for BUL45

1.00

D = 0.5

0.2

0.1

R

(t) = r(t) R

θ

0.10

0.01

θ

JC

°C/W MAX

P

(pk)

= 5.0

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

t

1

0.05

0.02

2

1

T

– T = P R (t)

(pk) θJC

J(pk)

C

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.10

0.01

1.00

10.00

100.00

1000.00

10000.00

100000.00

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

θJC

(t)) for BUL45F

7

Motorola Bipolar Power Transistor Device Data

The BUL45/BUL45F Bipolar Power Transistors were

specially designed for use in electronic lamp ballasts. A

circuit designed by Motorola applications was built to

demonstrate how well these devices operate. The circuit and

detailed component list are provided below.

COLLECTOR CURRENT SENSE

(USE EXTERNAL STRAPS)

C5 400 V

Q1

D5

I

C

0.1 µF

MUR150

22

µ

F

385 V

1000 V

47

Ω

D3

C1

15 µF

470 k

Ω

1

Ω

T1A

D10

D9

D7

TUBE

C4

T1B

Q2

1N4007

D1

D8

D6

47

I

FUSE

C

C3 1000 V

400 V

0.1

Ω

MUR150

D4

C2

C6

10 nF

µ

F

L

5.5 mH

CTN

0.1

µF

100 V

D2

1N5761

AC LINE

220 V

1

Ω

Components Lists

Q1 = Q2 = BUL45 Transistor

D1 = 1N4007 Rectifier

D2 = 1N5761 Rectifier

D3 = D4 = MUR150

D5 = D6 = MUR105

D7 = D8 = D9 = D10 = 1N400

All resistors are 1/4 Watt, ±5%

R1 = 470 kΩ

R2 = R3 = 47 Ω

R4 = R5 = 1 Ω (these resistors are optional, and

might be replaced by a short circuit)

C1 = 22 µF/385 V

CTN = 47 Ω @ 25°C

C2 = 0.1 µF

L = RM10 core, A1 = 400, B51 (LCC) 75 turns,

wire = 0.6 mm

C3 = 10 nF/1000 V

C4 = 15 nF/1000 V

T1 = FT10 toroid, T4A (LCC)

Primary: 4 turns

C5 = C6 = 0.1 µF/400 V

Secondaries: T1A: 4 turns

Secondaries: T1B: 4 turns

NOTES:

1. Since this design does not include the line input filter, it cannot be used “as–is” in a practical industrial circuit.

2. The windings are given for a 55 Watt load. For proper operation they must be re–calculated with any other loads.

Figure 22. Application Example

8

Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

MOUNTED

FULLY ISOLATED

PACKAGE

CLIP

0.107

″

MIN

0.107″ MIN

PACKAGE

LEADS

HEATSINK

0.110 MIN

HEATSINK

″

Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position

for Isolation Test Number 1 for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4–40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

HEATSINK

NUT

Figure 23a. Screw–Mounted

Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

.

torque of 6 to 8 in lbs is sufficientto provide maximum power dissipation capability. The compression washer helps to maintain a constant

pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will

.

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

Additionaltests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affectingthepackage.

.

However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in lbs

of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

9

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

C

S

B

F

T

4

INCHES

MIN

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

A

K

Q

Z

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

1

2

3

U

H

STYLE 1:

PIN 1. BASE

2. COLLECTOR

L

R

J

3. EMITTER

4. COLLECTOR

V

G

T

U

V

D

N

Z

0.080

2.04

BUL45

CASE 221A–06

TO–220AB

ISSUE Y

SEATING

–T–

PLANE

–B–

C

NOTES:

F

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

S

Q

H

U

INCHES

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MIN

MAX

0.629

0.402

0.189

0.034

0.129

MIN

15.78

10.01

4.60

MAX

15.97

10.21

4.80

A

K

0.621

0.394

0.181

0.026

0.121

1

2 3

0.67

0.86

STYLE 2:

3.08

3.27

PIN 1. BASE

2. COLLECTOR

3. EMITTER

–Y–

0.100 BSC

2.54 BSC

0.123

0.018

0.500

0.045

0.129

0.025

0.562

0.060

3.13

0.46

3.27

0.64

12.70

1.14

14.27

1.52

G

N

J

0.200 BSC

5.08 BSC

R

0.126

0.107

0.096

0.259

0.134

0.111

0.104

0.267

3.21

2.72

2.44

6.58

3.40

2.81

2.64

6.78

L

D 3 PL

U

M

0.25 (0.010)

B

Y

BUL45F

CASE 221D–02

(ISOLATED TO–220 TYPE)

ISSUE D

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

10

Motorola Bipolar Power Transistor Device Data

BUL45/D

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