BZD17C13P-E3-08中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Zener Diodes

Features

• Sillicon planar zener diodes

• Low profile surface-mount package

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s

at terminals

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

17249

Packaging codes/options:

GS18/10K per 13" reel, (8 mm tape), 50K/box

GS08/3K per 7" reel, (8 mm tape), 30K/box

Mechanical Data

Case: JEDEC DO219AB (SMF ) plastic case

Weight: approx. 15 mg

®

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

T_L= 80 °C

Symbol

P_tot

Value

2.3

Unit

W

Power dissipation

0.8 ¹⁾

T_A= 25 °C

P_tot

W

Non-repetitive peak pulse power

dissipation

100 µs square pulse ²⁾

P_ZSM

300

W

Notes:

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

²⁾T_j= 25 °C prior to surge

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

R_thJA

R_thJL

T_j

Value

180

Unit

K/W

°C

1)

Thermal resistance junction to ambient air

Thermal resistance junction to lead

Maximum junction temperature

Storage temperature range

30

150

T_stg

- 55 to + 150

°C

Notes:

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_F

Min.

Typ.

Max.

1.2

Unit

V

I_F= 0.2 A

Forward voltage

Document Number 81821

Rev. 1.0, 09-Jun-09

www.vishay.com

1

For technical support, please contact: Diodes-SSP@vishay.com

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Electrical Characteristics

T_J= 25 °C, unless otherwise specified

Differential

Temperature

coefficient

Test

current

Reverse leakage

current

Working voltage ¹⁾

resistance

V_Zat I_ZT

V

r_difat I_Z

α_Zat I_Z

I_ZT

I_R

V_R

V

Part number

Marking code

Ω

%/°C

mA

µA

max.

100

50

25

10

5

min.

max.

3.8

4.1

4.6

5

typ.

max.

8

min.

- 0.14

- 0.12

- 0.1

- 0.08

- 0.04

- 0.01

0

max.

BZD17C3V6P

BZD17C3V9P

BZD17C4V3P

BZD17C4V7P

BZD17C5V1P

BZD17C5V6P

BZD17C6V2P

BZD17C6V8P

BZD17C7V5P

BZD17C8V2P

BZD17C9V1P

BZD17C10P

BZD17C11P

BZD17C12P

BZD17C13P

BZD17C15P

BZD17C16P

BZD17C18P

BZD17C20P

BZD17C22P

BZD17C24P

BZD17C27P

BZD17C30P

BZD17C33P

BZD17C36P

BZD17C39P

BZD17C43P

BZD17C47P

BZD17C51P

BZD17C56P

BZD17C62P

BZD17C68P

BZD17C75P

BZD17C82P

BZD17C91P

BZD17C100P

BZD17C110P

BZD17C120P

BZD17C130P

BZD17C150P

BZD17C160P

BZD17C180P

BZD17C200P

I0

I1

3.4

3.7

4

- 0.04

- 0.02

0

100

50

25

10

5

1

8

I2

4

7

1

I3

4.4

4.8

5.2

5.8

6.4

7

3

7

1

I4

5.4

6

3

6

0.02

0.04

0.06

0.07

0.08

0.09

0.1

1

I5

2

4

10

5

2

I6

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32

2

3

2

I7

1

3

10

50

10

7

3

I8

1

2

0

3

I9

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28

1

2

0.03

0.05

0.06

0.07

0.08

0.09

3

J0

J1

J2

J3

J4

J5

J6

J7

J8

J9

K0

K1

K2

K3

K4

K5

K6

K7

K8

K9

L0

L1

L2

L3

L4

L5

L6

L7

L8

L9

M0

M1

M2

2

4

5

2

4

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

62

68

75

82

91

100

110

120

130

150

4

7

4

7

0.1

3

5

10

15

40

45

60

80

100

200

250

300

350

400

500

0.1

2

5

0.1

1

6

0.11

0.12

0.13

1

6

1

6

1

6

1

7

1

7

1

8

1

31

35

8

1

34

38

21

24

25

30

60

80

110

130

150

180

200

1

37

41

1

40

46

1

44

50

1

48

54

1

52

60

1

58

66

1

64

72

1

70

79

1

77

87

1

85

96

1

94

106

116

127

141

156

171

191

212

5

1

104

114

124

138

153

168

188

5

1

5

1

5

1

5

1

5

1

5

1

5

1

Note:

¹⁾Pulse test: t_p≤ 5 ms

www.vishay.com

2

Document Number 81821

Rev. 1.0, 09-Jun-09

For technical support, please contact: Diodes-SSP@vishay.com

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

10

Max. V_F

Typ. V_F

1

0.1

0.6

0.8

1.0

1.2

1.4

1.6

17411

V_F- Forward Voltage (V)

Figure 1. Forward Current vs. Forward Voltage

10 000

C5V1P

C18P

C6V8P

C12P

1000

100

C27P

C51P

C200P

0.5

10

0

1.0

1.5

2.0

2.5

3.0

17412

V_R- Reverse Voltage (V)

Figure 2. Typ. Diode Capacitance vs. Reverse Voltage

3.0

Tie point temperature

2.5

2.0

1.5

1.0

0.5

0

Ambient temperature

0

25

50

75

100 125 150

17413

T_amb- Ambient Temperature (°C)

Figure 3. Power Dissipation vs. Ambient Temperature

Document Number 81821

Rev. 1.0, 09-Jun-09

www.vishay.com

3

For technical support, please contact: Diodes-SSP@vishay.com

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Package Dimensions in millimeters (inches): DO219AB

0.85 (0.033)

0.35 (0.014)

Detail Z

enlarged

1.08 (0.043)

0.88 (0.035)

2.9 (0.114)

2.7 (0.106)

3.9 (0.154)

3.5 (0.138)

Foot print recommendation:

1.3 (0.051)

Created - Date: 15. February 2005

Rev. 3 - Date: 13. March 2007

Document no.:S8-V-3915.01-001 (4)

17247

2.9 (0.114)

www.vishay.com

4

Document Number 81821

Rev. 1.0, 09-Jun-09

For technical support, please contact: Diodes-SSP@vishay.com

BZD17C3V6P to BZD17C200P

Vishay Semiconductors

Blistertape for SMF Dimensions in millimeters

PS

18513

Document Number 81821

Rev. 1.0, 09-Jun-09

www.vishay.com

5

For technical support, please contact: Diodes-SSP@vishay.com

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