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产品型号BZV55-C15的概述

芯片BZV55-C15的概述 BZV55-C15是一种高精度的齐纳二极管，主要用于电压稳压和电压参考应用。其设计目的是在各种电子电路中提供稳定的反向电压，确保电路运行在预定的电压范围内。这种器件能够在宽范围内提供一致的电压输出，尤其在电源管理和信号调节领域具有重要的应用价值。齐纳二极管是一种能够在反向偏置条件下稳定工作并维持一个固定电压的半导体器件。BZV55-C15广泛应用于电源电路、过压保护、参考电压源及其他需要恒定电压的电子设备中。其结构采用了特殊的掺杂工艺，使其在反向击穿时能够安全且精确地维持输出电压，适合于各种强度的负载条件。芯片BZV55-C15的详细参数 BZV55-C15的主要技术参数如下： - 额定齐纳电压：15V - 最大功耗：500mW - 动态电阻：约为20Ω - 反向击穿电流：最大超过 20mA - 工作温度范围：-55°C 至 +150°C - 引脚配置...

产品型号BZV55-C15的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

1/3 page (Datasheet)

M3D054

BZV55 series

Voltage regulator diodes

Product speciﬁcation

2002 Feb 28

Supersedes data of 1999 May 21

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

FEATURES

• Total power dissipation: max. 500 mW

• Two tolerance series: ±2%, and approx. ±5%

• Working voltage range: nom. 2.4 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation:

max. 40 W.

columns

APPLICATIONS

MAM215

• Low voltage stabilizers or voltage references.

DESCRIPTION

Low-power voltage regulator diodes in small hermetically

sealed glass SOD80C SMD packages. The diodes are

available in the normalized E24 ±2% (BZV55-B) and

approx. ±5% (BZV55-C) tolerance range. The series

consists of 37 types with nominal working voltages from

2.4 to 75 V.

The cathode is indicated by a yellow band.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

250

see Tables 1 and 2 A

UNIT

I_F

continuous forward current

−

I_ZSM

non-repetitive peak reverse current

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge

P_tot

total power dissipation

_amb≤ 50 °C; note 1

−

400

500

tie-point ≤ 50 °C; note 1

P_ZSM

non-repetitive peak reverse power

dissipation

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge; see Fig.3

T_stg

T_j

storage temperature

junction temperature

−65

+200

°C

Note

1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

ELECTRICAL CHARACTERISTICS

Total BZV55-B and BZV55-C series

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

I_F= 10 mA; see Fig.4

MAX.

UNIT

V_F

I_R

forward voltage

reverse current

0.9

BZV55-B/C2V4

BZV55-B/C2V7

BZV55-B/C3V0

BZV55-B/C3V3

BZV55-B/C3V6

BZV55-B/C3V9

BZV55-B/C4V3

BZV55-B/C4V7

BZV55-B/C5V1

BZV55-B/C5V6

BZV55-B/C6V2

BZV55-B/C6V8

BZV55-B/C7V5

BZV55-B/C8V2

BZV55-B/C9V1

BZV55-B/C10

V_R= 1 V

V_R= 2 V

V_R= 4 V

V_R= 5 V

V_R= 6 V

V_R= 7 V

V_R= 8 V

V_R= 0.7V_Znom

µA

700

500

200

100

BZV55-B/C11

BZV55-B/C12

BZV55-B/C13

BZV55-B/C15 to BZV55-B/C75

2002 Feb 28

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Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24

T_j= 25 °C unless otherwise speciﬁed.

WORKING VOLTAGE

V_Z(V)

DIFFERENTIAL RESISTANCE

TEMP. COEFF.

S_Z(mV/K)

DIODE CAP.

C_d(pF)

NON-REPETITIVE PEAK

REVERSE CURRENT

r_dif(Ω)

at I_Ztest= 5 mA

(see Figs 5 and 6)

at f = 1 MHz;

V_R= 0 V

I_ZSM(A)

at t_p= 100 µs; T_amb= 25 °C

BZV55-

Bxxx

Cxxx

Tol. approx.

Tol. ±2% (B)

at I_Ztest= 1 mA at I_Ztest= 5 mA

±5% (C)

MIN. MAX. MIN. MAX.

TYP.

275

MAX.

600

TYP.

MAX. MIN.

TYP. MAX.

MAX.

2V4

2V7

3V0

3V3

3V6

3V9

4V3

4V7

5V1

5V6

6V2

6V8

7V5

8V2

9V1

2.35

2.65

2.94

3.23

3.53

3.82

4.21

4.61

5.00

5.49

6.08

6.66

7.35

8.04

8.92

9.80

2.45

2.75

3.06

3.37

3.67

3.98

4.39

4.79

5.20

5.71

6.32

6.94

7.65

8.36

9.28

2.2

2.5

2.8

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

2.6

100

−3.5

−2.7

−2.0

0.4

−1.6

−2.0

−2.1

−2.4

−2.5

−1.4

−0.8

1.2

450

300

200

150

6.0

4.0

3.0

2.5

2.0

1.5

1.25

2.9

300

325

350

375

400

410

425

400

600

500

480

400

150

3.2

3.5

3.8

4.1

4.6

5.0

0.2

1.2

2.5

3.7

4.5

5.3

6.2

7.0

8.0

9.0

10.0

11.0

13.0

14.0

16.0

18.0

20.0

22.0

5.4

6.0

6.6

2.3

7.2

1.2

3.0

7.9

2.5

4.0

8.7

3.2

4.6

9.6

100

150

170

200

225

250

3.8

5.5

10.20 9.4

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

4.5

6.4

10.80 11.20 10.4

11.80 12.20 11.4

12.70 13.30 12.4

14.70 15.30 13.8

15.70 16.30 15.3

17.60 18.40 16.8

19.60 20.40 18.8

21.60 22.40 20.8

23.50 24.50 22.8

5.4

7.4

6.0

8.4

7.0

9.4

9.2

11.4

12.4

14.4

15.6

17.6

19.6

10.4

12.4

12.3

14.1

15.9

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Table 2 Per type, BZV55-B/C27 to BZV55-B/C75

T_j= 25 °C unless otherwise speciﬁed.

WORKING VOLTAGE

V_Z(V)

DIFFERENTIAL RESISTANCE

TEMP. COEFF.

S_Z(mV/K)

DIODE CAP.

C_d(pF)

NON-REPETITIVE PEAK

REVERSE CURRENT

r_dif(Ω)

at I_Ztest= 2 mA

(see Figs 5 and 6)

at f = 1 MHz;

V_R= 0 V

I_ZSM(A)

at t_p= 100 µs; T_amb= 25 °C

BZV55-

Bxxx

Cxxx

Tol. approx.

Tol. ±2% (B)

at I_Ztest= 0.5 mA at I_Ztest= 2 mA

±5% (C)

MIN. MAX. MIN. MAX.

TYP.

MAX.

300

TYP.

MAX. MIN.

TYP. MAX.

MAX.

26.50 27.50 25.1

29.40 30.60 28.0

32.30 33.70 31.0

35.30 36.70 34.0

38.20 39.80 37.0

42.10 43.90 40.0

46.10 47.90 44.0

50.00 52.00 48.0

54.90 57.10 52.0

60.80 63.20 58.0

66.60 69.40 64.0

73.50 76.50 70.0

28.9

32.0

35.0

38.0

41.0

46.0

50.0

54.0

60.0

66.0

72.0

79.0

18.0

20.6

23.3

26.0

28.7

31.4

35.0

38.6

42.2

58.8

65.6

73.4

22.7

25.7

28.7

31.8

34.8

38.8

42.9

46.9

52.0

64.4

71.7

80.2

25.3

29.4

33.4

37.4

41.2

46.6

51.8

57.2

63.8

71.6

79.8

88.6

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.25

0.2

300

325

350

375

400

425

450

475

500

130

150

170

180

200

215

240

255

100

120

150

170

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

300

UNIT

K/W

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point

thermal resistance from junction to ambient see Fig.2 and note 1

380

Note

1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

GRAPHICAL DATA

MBG930

handbook, full pagewidth

δ = 1

th j-a

0.75

0.50

0.33

(K/W)

0.20

0.10

0.05

0.02

0.01

≤0.001

δ =

−1

(ms)

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

MBG801

MBG781

300

handbook, halfpage

ZSM

(mA)

(W)

200

(1)

100

(2)

0.6

−1

0.8

1.0

duration (ms)

(V)

(1) T_j= 25 °C (prior to surge).

(2) T_j= 150 °C (prior to surge).

T_j= 25 °C.

Fig.3 Maximum permissible non-repetitive peak

reverse power dissipation versus duration.

Fig.4 Typical forward current as a function of

forward voltage.

MBG783

MBG782

handbook, halfpage

(mV/K)

4V3

(mV/K)

9V1

−1

3V9

8V2

7V5

6V8

3V6

6V2

5V6

5V1

−2

3V3

4V7

3V0

2V4

2V7

−3

−5

(mA)

BZV55-B/C4V7 to BZV55-B/C12.

BZV55-B/C2V4 to BZV55-B/C4V3.

T_j= 25 to 150 °C.

Fig.5 Temperature coefficient as a function of

working current; typical values.

Fig.6 Temperature coefficient as a function of

working current; typical values.

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

PACKAGE OUTLINE

Hermetically sealed glass surface mounted package; 2 connectors

SOD80C

(1)

DIMENSIONS (mm are the original dimensions)

2 mm

UNIT

scale

1.60

1.45

3.7

3.3

0.3

Note

1. The marking band indicates the cathode.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-06-20

SOD80C

100H01

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS⁽¹⁾

STATUS⁽²⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

NOTES

2002 Feb 28

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZV55 series

NOTES

2002 Feb 28

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613514/03/pp12

Date of release: 2002 Feb 28

Document order number: 9397 750 09386

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BZV55-C15产品参数

型号:	BZV55-C15
生命周期：	Active
Reach Compliance Code：	unknown
Base Number Matches：	1
类别：	Diodes
配置：	Single
容差：	0.05
VZ (V) nom.：	15
Condition1_IT (mA)：	5
PD (mW) max：	500
AEC Qualified：	Yes
最高工作温度：	175
最低工作温度：	-55
生命周期：	Active
是否无铅：	Yes
符合Reach：	Yes
符合RoHS：	Yes
ECCN代码：	EAR99
Pin：	Z1
Package Outlines：	MINI-MELF

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